GB8911485D0 - Ultrafine wires made of copper alloy and semiconductor devices using same - Google Patents

Ultrafine wires made of copper alloy and semiconductor devices using same

Info

Publication number
GB8911485D0
GB8911485D0 GB898911485A GB8911485A GB8911485D0 GB 8911485 D0 GB8911485 D0 GB 8911485D0 GB 898911485 A GB898911485 A GB 898911485A GB 8911485 A GB8911485 A GB 8911485A GB 8911485 D0 GB8911485 D0 GB 8911485D0
Authority
GB
United Kingdom
Prior art keywords
copper alloy
same
semiconductor devices
wires made
ultrafine wires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB898911485A
Other versions
GB2220956A (en
GB2220956B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63121477A external-priority patent/JPH01291435A/en
Priority claimed from JP63121476A external-priority patent/JPH01290231A/en
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Publication of GB8911485D0 publication Critical patent/GB8911485D0/en
Publication of GB2220956A publication Critical patent/GB2220956A/en
Application granted granted Critical
Publication of GB2220956B publication Critical patent/GB2220956B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Conductive Materials (AREA)

Abstract

An ultrafine copper alloy wire, comprising (a) a base material composed essentially of an oxygen-free copper containing not higher than 1.0 ppm in total of at least one member selected from the group consisting of S, Se and Te and balance copper, and (b) at least one alloy element selected from the group consisting of Si, Al, Cr, Fe, Mn, Ni, P, Sn and Zn in a total amount in the range of 1.0 to 500 ppm, and a semiconductor device comprising a bonding wire made of the ultrafine copper alloy wire.
GB8911485A 1988-05-18 1989-05-18 Ultrafine wires made of copper alloy and semiconductor devices using same Expired - Fee Related GB2220956B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63121477A JPH01291435A (en) 1988-05-18 1988-05-18 Extrafine copper alloy wire for semiconductor device and semiconductor device
JP63121476A JPH01290231A (en) 1988-05-18 1988-05-18 Semiconductor device and copper allow extremely fine wire therefor

Publications (3)

Publication Number Publication Date
GB8911485D0 true GB8911485D0 (en) 1989-07-05
GB2220956A GB2220956A (en) 1990-01-24
GB2220956B GB2220956B (en) 1991-07-17

Family

ID=26458835

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8911485A Expired - Fee Related GB2220956B (en) 1988-05-18 1989-05-18 Ultrafine wires made of copper alloy and semiconductor devices using same

Country Status (3)

Country Link
KR (1) KR900019209A (en)
DE (1) DE3916168A1 (en)
GB (1) GB2220956B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4304878A1 (en) * 1992-02-21 1993-08-26 Furukawa Electric Co Ltd
DE102004010040A1 (en) * 2004-03-02 2005-09-15 Norddeutsche Affinerie Ag Copper wire and method and apparatus for making a copper wire
US8610291B2 (en) * 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
WO2011013527A1 (en) * 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
WO2017221434A1 (en) 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4311522A (en) * 1980-04-09 1982-01-19 Amax Inc. Copper alloys with small amounts of manganese and selenium
US4676827A (en) * 1985-03-27 1987-06-30 Mitsubishi Kinzoku Kabushiki Kaisha Wire for bonding a semiconductor device and process for producing the same

Also Published As

Publication number Publication date
GB2220956A (en) 1990-01-24
KR900019209A (en) 1990-12-24
GB2220956B (en) 1991-07-17
DE3916168A1 (en) 1989-11-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19980518