JPS57145351A - Lead frame for semiconductor - Google Patents

Lead frame for semiconductor

Info

Publication number
JPS57145351A
JPS57145351A JP56030996A JP3099681A JPS57145351A JP S57145351 A JPS57145351 A JP S57145351A JP 56030996 A JP56030996 A JP 56030996A JP 3099681 A JP3099681 A JP 3099681A JP S57145351 A JPS57145351 A JP S57145351A
Authority
JP
Japan
Prior art keywords
alloy
wire
lead frame
semiconductor
plated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56030996A
Other languages
Japanese (ja)
Other versions
JPS6244816B2 (en
Inventor
Ryozo Yamagishi
Osamu Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP56030996A priority Critical patent/JPS57145351A/en
Publication of JPS57145351A publication Critical patent/JPS57145351A/en
Publication of JPS6244816B2 publication Critical patent/JPS6244816B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01028—Nickel [Ni]
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/014—Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a lead frame which is inexpensive and easy to connect with an Al alloy wire by a method wherein the element mounting part and wire connecting part of a base body made of a ferrous alloy are plated with an Ni alloy containing P or a Co alloy containing P. CONSTITUTION:A base body 1 made of an Fe-42% Ni alloy is plated with an Ni-P alloy 2 to about 4mu thickness, a semiconductor element 3 is soldered 4 thereto, and a wire 5 of Al alloy or Au is connected to the element. The alloy 2 may be replaced by a Co-P alloy. It is desirable that the content of P in an alloy used for plating is 1wt% or more, since the connectivity of the wire lowers when it is less than 1wt%. By this constitution, corrosion is prevented at a surface to which the wire is connected, the reliability of the frame is increased, the use of the Al alloy wire is enabled, and thus the reduction of the cost is realized.
JP56030996A 1981-03-04 1981-03-04 Lead frame for semiconductor Granted JPS57145351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56030996A JPS57145351A (en) 1981-03-04 1981-03-04 Lead frame for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56030996A JPS57145351A (en) 1981-03-04 1981-03-04 Lead frame for semiconductor

Publications (2)

Publication Number Publication Date
JPS57145351A true JPS57145351A (en) 1982-09-08
JPS6244816B2 JPS6244816B2 (en) 1987-09-22

Family

ID=12319202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56030996A Granted JPS57145351A (en) 1981-03-04 1981-03-04 Lead frame for semiconductor

Country Status (1)

Country Link
JP (1) JPS57145351A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192057A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor device
JPS6010796A (en) * 1983-06-30 1985-01-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Wiring structure
JPS6362259A (en) * 1986-09-02 1988-03-18 Nec Corp Lead frame for semiconductor device
JP7061247B1 (en) * 2020-12-28 2022-04-28 松田産業株式会社 Nickel electrolytic plating film and plating structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108757A (en) * 1979-02-15 1980-08-21 Toshiba Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108757A (en) * 1979-02-15 1980-08-21 Toshiba Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192057A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor device
JPS6010796A (en) * 1983-06-30 1985-01-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Wiring structure
JPS6362259A (en) * 1986-09-02 1988-03-18 Nec Corp Lead frame for semiconductor device
JP7061247B1 (en) * 2020-12-28 2022-04-28 松田産業株式会社 Nickel electrolytic plating film and plating structure
JP7096955B1 (en) * 2020-12-28 2022-07-06 松田産業株式会社 A plating structure provided with a Ni electrolytic plating film and a lead frame containing the plating structure.
WO2022145290A1 (en) * 2020-12-28 2022-07-07 松田産業株式会社 Plating structure comprising ni electrolytic plating film, and lead frame including said plating structure

Also Published As

Publication number Publication date
JPS6244816B2 (en) 1987-09-22

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