KR900003027B1 - 고정정보 기억용 판독전용 기억장치를 내장하는 반도체 메모리장치 - Google Patents

고정정보 기억용 판독전용 기억장치를 내장하는 반도체 메모리장치 Download PDF

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Publication number
KR900003027B1
KR900003027B1 KR1019860010831A KR860010831A KR900003027B1 KR 900003027 B1 KR900003027 B1 KR 900003027B1 KR 1019860010831 A KR1019860010831 A KR 1019860010831A KR 860010831 A KR860010831 A KR 860010831A KR 900003027 B1 KR900003027 B1 KR 900003027B1
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KR
South Korea
Prior art keywords
memory
region
read
rom
fixed information
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Expired
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KR1019860010831A
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English (en)
Korean (ko)
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KR870006578A (ko
Inventor
마사노부 요시다
Original Assignee
후지쓰 가부시끼가이샤
야마모도 다꾸마
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Application filed by 후지쓰 가부시끼가이샤, 야마모도 다꾸마 filed Critical 후지쓰 가부시끼가이샤
Publication of KR870006578A publication Critical patent/KR870006578A/ko
Application granted granted Critical
Publication of KR900003027B1 publication Critical patent/KR900003027B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/18—Circuits for erasing optically
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Read Only Memory (AREA)
KR1019860010831A 1985-12-18 1986-12-17 고정정보 기억용 판독전용 기억장치를 내장하는 반도체 메모리장치 Expired KR900003027B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP282739 1985-12-18
JP60282739A JPS62143476A (ja) 1985-12-18 1985-12-18 半導体記憶装置
JP60-282739 1985-12-18

Publications (2)

Publication Number Publication Date
KR870006578A KR870006578A (ko) 1987-07-13
KR900003027B1 true KR900003027B1 (ko) 1990-05-04

Family

ID=17656418

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860010831A Expired KR900003027B1 (ko) 1985-12-18 1986-12-17 고정정보 기억용 판독전용 기억장치를 내장하는 반도체 메모리장치

Country Status (5)

Country Link
US (1) US4758984A (cg-RX-API-DMAC7.html)
EP (1) EP0227549B1 (cg-RX-API-DMAC7.html)
JP (1) JPS62143476A (cg-RX-API-DMAC7.html)
KR (1) KR900003027B1 (cg-RX-API-DMAC7.html)
DE (1) DE3684429D1 (cg-RX-API-DMAC7.html)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229600A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置
US5448517A (en) * 1987-06-29 1995-09-05 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
JPH061840B2 (ja) * 1987-07-08 1994-01-05 日本電気株式会社 光遮へい型ｕｐｒｏｍ
FR2623651B1 (fr) * 1987-11-20 1992-11-27 Sgs Thomson Microelectronics Plan memoire et procede et prototype de definition d'un circuit integre electronique comportant un tel plan memoire
US5253200A (en) * 1987-12-15 1993-10-12 Sony Corporation Electrically erasable and programmable read only memory using stacked-gate cell
JP2567025B2 (ja) * 1988-03-31 1996-12-25 株式会社東芝 半導体集積回路
EP0357333B1 (en) * 1988-09-01 1994-12-28 Atmel Corporation Sealed charge storage structure
JPH0777239B2 (ja) * 1988-09-22 1995-08-16 日本電気株式会社 浮遊ゲート型不揮発性半導体記憶装置
JPH02168666A (ja) * 1988-09-29 1990-06-28 Mitsubishi Electric Corp 相補型半導体装置とその製造方法
KR910007434B1 (ko) * 1988-12-15 1991-09-26 삼성전자 주식회사 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법
JP2704534B2 (ja) * 1988-12-16 1998-01-26 日本電信電話株式会社 アナログ・デジタル混在ｌｓｉ
GB2229575B (en) * 1989-03-22 1993-05-12 Intel Corp Method of reducing hot-electron degradation in semiconductor devices
US5229311A (en) * 1989-03-22 1993-07-20 Intel Corporation Method of reducing hot-electron degradation in semiconductor devices
IT1229168B (it) * 1989-04-10 1991-07-22 Sgs Thomson Microelecyronics S Cella di memoria uprom con struttura compatibile con la fabbricazione di matrici di celle eprom a tovaglia con linee di source e drain autoallineate, e processo per la sua fabbricazione
JPH02295171A (ja) * 1989-05-09 1990-12-06 Fujitsu Ltd 半導体装置及びその製造方法
JPH02308572A (ja) * 1989-05-23 1990-12-21 Toshiba Corp 半導体記憶装置のプログラム方法
EP0827197B1 (en) * 1989-07-18 2002-12-11 Sony Corporation Method of manufacturing a non-volatile semiconductor memory device
FR2656156A1 (fr) * 1989-12-16 1991-06-21 Sgs Thomson Microelectronics Circuit integre entierement protege des rayons ultra-violets.
US5053992A (en) * 1990-10-04 1991-10-01 General Instrument Corporation Prevention of inspection of secret data stored in encapsulated integrated circuit chip
US5050123A (en) * 1990-11-13 1991-09-17 Intel Corporation Radiation shield for EPROM cells
US5355007A (en) * 1990-11-23 1994-10-11 Texas Instruments Incorporated Devices for non-volatile memory, systems and methods
US5338969A (en) * 1991-06-27 1994-08-16 Texas Instruments, Incorporated Unerasable programmable read-only memory
JPH05243581A (ja) * 1992-02-28 1993-09-21 Mitsubishi Electric Corp 不揮発性メモリ装置
DE69204829T2 (de) * 1992-06-30 1996-02-22 Sgs Thomson Microelectronics Integrierte Schaltung mit vollständigem Schutz gegen Ultraviolettstrahlen.
US5703808A (en) * 1996-02-21 1997-12-30 Motorola, Inc. Non-volatile memory cell and method of programming
JP3037191B2 (ja) * 1997-04-22 2000-04-24 日本電気アイシーマイコンシステム株式会社 半導体装置
US6774432B1 (en) 2003-02-05 2004-08-10 Advanced Micro Devices, Inc. UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL
US7311385B2 (en) * 2003-11-12 2007-12-25 Lexmark International, Inc. Micro-fluid ejecting device having embedded memory device
DE102004047663B4 (de) * 2004-09-30 2007-07-19 Infineon Technologies Ag Speicherschaltung mit einer Initialisierungseinheit, sowie Verfahren zum Optimieren von Datenempfangsparametern in einem Speichercontroller
JP4952954B2 (ja) * 2008-11-27 2012-06-13 セイコーエプソン株式会社 半導体装置
US9406621B2 (en) 2010-06-10 2016-08-02 Texas Instruments Incorporated Ultraviolet energy shield for non-volatile charge storage memory
CN102314036A (zh) * 2010-06-29 2012-01-11 普诚科技股份有限公司 抗紫外光的电子装置及其制法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582439B2 (ja) * 1978-11-27 1983-01-17 富士通株式会社 ブ−トストラツプ回路
JPS58197777A (ja) * 1982-05-12 1983-11-17 Mitsubishi Electric Corp 半導体不揮発性記憶装置
US4519050A (en) * 1982-06-17 1985-05-21 Intel Corporation Radiation shield for an integrated circuit memory with redundant elements
US4530074A (en) * 1982-06-17 1985-07-16 Intel Corporation Radiation shield for a portion of a radiation sensitive integrated circuit
JPS596581A (ja) * 1982-07-02 1984-01-13 Mitsubishi Electric Corp 半導体不揮発性記憶装置

Also Published As

Publication number Publication date
JPS62143476A (ja) 1987-06-26
EP0227549A2 (en) 1987-07-01
EP0227549A3 (en) 1988-04-27
JPS6366071B2 (cg-RX-API-DMAC7.html) 1988-12-19
DE3684429D1 (de) 1992-04-23
US4758984A (en) 1988-07-19
KR870006578A (ko) 1987-07-13
EP0227549B1 (en) 1992-03-18

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