KR900001838B1 - 고열전도성 세라믹스기판 - Google Patents

고열전도성 세라믹스기판 Download PDF

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Publication number
KR900001838B1
KR900001838B1 KR1019860007670A KR860007670A KR900001838B1 KR 900001838 B1 KR900001838 B1 KR 900001838B1 KR 1019860007670 A KR1019860007670 A KR 1019860007670A KR 860007670 A KR860007670 A KR 860007670A KR 900001838 B1 KR900001838 B1 KR 900001838B1
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KR
South Korea
Prior art keywords
ceramic substrate
thermal conductivity
high thermal
conductive film
ceramics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860007670A
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English (en)
Korean (ko)
Other versions
KR870003678A (ko
Inventor
슌이찌로오 다나까
아끼오 사야노
히로유끼 이시즈까
야스유끼 스기우라
Original Assignee
가부시끼가이샤 도시바
와다리 스기이찌로오
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Publication of KR870003678A publication Critical patent/KR870003678A/ko
Application granted granted Critical
Publication of KR900001838B1 publication Critical patent/KR900001838B1/ko
Expired legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5177—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal characterised by the non-metallic part of the metallising composition
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5133—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal with a composition mainly composed of one or more of the refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/259—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Ceramic Products (AREA)
  • Thin Film Transistor (AREA)
KR1019860007670A 1985-09-13 1986-09-12 고열전도성 세라믹스기판 Expired KR900001838B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60203104A JPS6265991A (ja) 1985-09-13 1985-09-13 高熱伝導性セラミツクス基板
JP85203104 1985-09-13
JP60-203104 1985-09-13

Publications (2)

Publication Number Publication Date
KR870003678A KR870003678A (ko) 1987-04-18
KR900001838B1 true KR900001838B1 (ko) 1990-03-24

Family

ID=16468454

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860007670A Expired KR900001838B1 (ko) 1985-09-13 1986-09-12 고열전도성 세라믹스기판

Country Status (5)

Country Link
US (1) US5164246A (https=)
EP (1) EP0217584B1 (https=)
JP (1) JPS6265991A (https=)
KR (1) KR900001838B1 (https=)
DE (1) DE3687389T2 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62197374A (ja) * 1986-02-20 1987-09-01 株式会社東芝 導電性メタライズ層を有する窒化アルミニウム焼結体の製造方法
CA1333241C (en) * 1987-01-26 1994-11-29 Akira Sasame Aluminum nitride sintered body formed with metallized layer and method of manufacturing the same
US4965659A (en) * 1987-06-30 1990-10-23 Sumitomo Electric Industries, Ltd. Member for a semiconductor structure
JPH0676790B2 (ja) * 1987-07-30 1994-09-28 株式会社東芝 イグナイタ
EP0434264B1 (en) * 1989-12-22 1994-10-12 Westinghouse Electric Corporation Package for power semiconductor components
DE4017181C2 (de) * 1990-05-29 1998-08-27 Daimler Benz Aerospace Ag Elektrisches Bauelement
US6207288B1 (en) 1991-02-05 2001-03-27 Cts Corporation Copper ink for aluminum nitride
US5306389A (en) * 1991-09-04 1994-04-26 Osram Sylvania Inc. Method of protecting aluminum nitride circuit substrates during electroless plating using a surface oxidation treatment
JPH06296084A (ja) * 1993-02-12 1994-10-21 Ngk Spark Plug Co Ltd 高熱伝導体及びこれを備えた配線基板とこれらの製造方法
US5485333A (en) * 1993-04-23 1996-01-16 Eastman Kodak Company Shorted DMR reproduce head
DE4320910C1 (de) * 1993-06-18 1994-09-08 Siemens Ag Verfahren zur Herstellung einer gasdichten Lötverbindung und Anwendung des Verfahrens bei der Herstellung von Bauelementen mit vakuumdichten Gehäuse
US5705261A (en) * 1993-10-28 1998-01-06 Saint-Gobain/Norton Industrial Ceramics Corporation Active metal metallization of mini-igniters by silk screening
JP3927250B2 (ja) * 1995-08-16 2007-06-06 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 窒化アルミニウム基板用厚膜導体ペースト組成物
US5783113A (en) * 1997-03-27 1998-07-21 International Business Machines Corporation Conductive paste for large greensheet screening including high thixotropic agent content
SE515856C2 (sv) 1999-05-19 2001-10-22 Ericsson Telefon Ab L M Bärare för elektronikkomponenter
JP3969987B2 (ja) * 2001-10-01 2007-09-05 Ｄｏｗａホールディングス株式会社 セラミックスと合金の接合体
CN1307124C (zh) * 2001-10-09 2007-03-28 E·I·内穆尔杜邦公司 用于氮化铝基片上的厚膜导体组合物
DE10227658B4 (de) * 2002-06-20 2012-03-08 Curamik Electronics Gmbh Metall-Keramik-Substrat für elektrische Schaltkreise -oder Module, Verfahren zum Herstellen eines solchen Substrates sowie Modul mit einem solchen Substrat
US20040226696A1 (en) * 2003-02-28 2004-11-18 Hong Huang Surface mount resistors as heat transfer augmentation devices
JP5455468B2 (ja) * 2009-06-30 2014-03-26 矢崎総業株式会社 メタルコア基板用基材及び該メタルコア基板用基材を用いたメタルコア基板の製造方法
WO2012006501A2 (en) * 2010-07-09 2012-01-12 Climax Engineered Materials, Llc Potassium / molybdenum composite metal powders, powder blends, products thereof, and methods for producing photovoltaic cells

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB967452A (en) * 1960-07-20 1964-08-19 Plessey Co Ltd Improvements in or relating to the sealing of high-purity alumina to metal
US3197290A (en) * 1964-03-02 1965-07-27 Eitel Mccullough Inc Metalized ceramic structures
US3197790A (en) * 1964-05-06 1965-08-03 Cotton Producers Inst Of The N Process for imparting durable loft and warmth to cellulosic fabrics
AT350285B (de) * 1974-08-07 1979-05-25 Plansee Metallwerk Mit einem ueberzug versehene, metallische gebrauchsgegenstaende
JPS53116285A (en) * 1977-03-22 1978-10-11 Mitsubishi Metal Corp Coated super hard alloy product and its manufacture
US4153518A (en) * 1977-11-18 1979-05-08 Tektronix, Inc. Method of making a metalized substrate having a thin film barrier layer
JPS57160984A (en) * 1981-03-26 1982-10-04 Ngk Spark Plug Co Silicon nitride ceramic having metallized surface and manufacture
CA1217109A (en) * 1982-09-20 1987-01-27 Mary E. Turney Liquid skin cleanser composition
JPS59182283A (ja) * 1983-03-29 1984-10-17 株式会社東芝 導電性セラミツクス焼結体の製造方法
JPS59203784A (ja) * 1983-04-28 1984-11-17 株式会社東芝 非酸化物系セラミックス焼結体のモリブデンシリサイド被膜の形成方法
JPS6077185A (ja) * 1983-09-30 1985-05-01 株式会社東芝 セラミツクス焼結体およびその製造方法
JPH0810710B2 (ja) * 1984-02-24 1996-01-31 株式会社東芝 良熱伝導性基板の製造方法
EP0153737B1 (en) * 1984-02-27 1993-07-28 Kabushiki Kaisha Toshiba Circuit substrate having high thermal conductivity
JPS60200871A (ja) * 1984-03-27 1985-10-11 住友金属工業株式会社 金属とセラミツクスの接合方法
JPS6140871A (ja) * 1984-07-25 1986-02-27 住友電気工業株式会社 鑞付け可能なＳｉ↓３Ｎ↓４系セラミツクス複合組成物及びその製造法
JPS6177681A (ja) * 1984-09-21 1986-04-21 住友電気工業株式会社 窒化物セラミツクスの接合方法
JPS61291480A (ja) * 1985-06-17 1986-12-22 日本特殊陶業株式会社 窒化アルミニウム製基材の表面処理組成物
US4695517A (en) * 1985-05-31 1987-09-22 Ngk Spark Plug Co., Ltd. Composite layer aluminum nitride base sintered body
KR890003856B1 (ko) * 1985-09-10 1989-10-05 가부시끼 가이샤 도시바 세라믹스 소결체용 금속화 조성물
EP0235682B2 (en) * 1986-02-20 1997-11-12 Kabushiki Kaisha Toshiba Aluminium nitride sintered body having conductive metallized layer

Also Published As

Publication number Publication date
JPS6265991A (ja) 1987-03-25
DE3687389D1 (de) 1993-02-11
JPH0510310B2 (https=) 1993-02-09
DE3687389T2 (de) 1993-05-19
EP0217584B1 (en) 1992-12-30
US5164246A (en) 1992-11-17
EP0217584A2 (en) 1987-04-08
KR870003678A (ko) 1987-04-18
EP0217584A3 (en) 1989-03-22

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