KR900001664B1 - 에칭 기술 - Google Patents

에칭 기술 Download PDF

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Publication number
KR900001664B1
KR900001664B1 KR1019840004433A KR840004433A KR900001664B1 KR 900001664 B1 KR900001664 B1 KR 900001664B1 KR 1019840004433 A KR1019840004433 A KR 1019840004433A KR 840004433 A KR840004433 A KR 840004433A KR 900001664 B1 KR900001664 B1 KR 900001664B1
Authority
KR
South Korea
Prior art keywords
etching
silicon
tantalum
region
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019840004433A
Other languages
English (en)
Korean (ko)
Other versions
KR850000775A (ko
Inventor
말콤 쿡 조엘
마이클 돈 넬리 빈센트
로렌스 프램 다니엘
에드워드 이보트슨 데일
아론 뮤챠 죤
Original Assignee
아메리칸 텔리폰 앤드 텔레그라프 캄파니
오레그 이. 앨버
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아메리칸 텔리폰 앤드 텔레그라프 캄파니, 오레그 이. 앨버 filed Critical 아메리칸 텔리폰 앤드 텔레그라프 캄파니
Publication of KR850000775A publication Critical patent/KR850000775A/ko
Application granted granted Critical
Publication of KR900001664B1 publication Critical patent/KR900001664B1/ko
Expired legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/105—Masks, metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019840004433A 1983-07-27 1984-07-26 에칭 기술 Expired KR900001664B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US517,754 1983-07-27
JP517,754 1983-07-27
US06/517,754 US4498953A (en) 1983-07-27 1983-07-27 Etching techniques

Publications (2)

Publication Number Publication Date
KR850000775A KR850000775A (ko) 1985-03-09
KR900001664B1 true KR900001664B1 (ko) 1990-03-17

Family

ID=24061096

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840004433A Expired KR900001664B1 (ko) 1983-07-27 1984-07-26 에칭 기술

Country Status (9)

Country Link
US (1) US4498953A (https=)
JP (1) JPS6053027A (https=)
KR (1) KR900001664B1 (https=)
CA (1) CA1235630A (https=)
DE (1) DE3427599A1 (https=)
FR (1) FR2551583B1 (https=)
GB (1) GB2144083B (https=)
HK (1) HK37388A (https=)
NL (1) NL8402360A (https=)

Families Citing this family (156)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094757A (ja) * 1983-10-20 1985-05-27 Fujitsu Ltd 抵抗体
US4637129A (en) * 1984-07-30 1987-01-20 At&T Bell Laboratories Selective area III-V growth and lift-off using tungsten patterning
US4689115A (en) * 1985-04-26 1987-08-25 American Telephone And Telegraph Company, At&T Bell Laboratories Gaseous etching process
DE3714144C2 (de) * 1986-05-31 1994-08-25 Toshiba Kawasaki Kk Verfahren zum chemischen Trockenätzen
US4713141A (en) * 1986-09-22 1987-12-15 Intel Corporation Anisotropic plasma etching of tungsten
US4816294A (en) * 1987-05-04 1989-03-28 Midwest Research Institute Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes
US4998979A (en) * 1988-06-06 1991-03-12 Canon Kabushiki Kaisha Method for washing deposition film-forming device
JP2646811B2 (ja) * 1990-07-13 1997-08-27 ソニー株式会社 ドライエッチング方法
JPH0496223A (ja) * 1990-08-03 1992-03-27 Fujitsu Ltd 半導体装置の製造方法
US7830587B2 (en) * 1993-03-17 2010-11-09 Qualcomm Mems Technologies, Inc. Method and device for modulating light with semiconductor substrate
US6674562B1 (en) 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US7550794B2 (en) * 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
US8081369B2 (en) * 1994-05-05 2011-12-20 Qualcomm Mems Technologies, Inc. System and method for a MEMS device
US8014059B2 (en) * 1994-05-05 2011-09-06 Qualcomm Mems Technologies, Inc. System and method for charge control in a MEMS device
US7839556B2 (en) * 1994-05-05 2010-11-23 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
JPH0864559A (ja) 1994-06-14 1996-03-08 Fsi Internatl Inc 基板面から不要な物質を除去する方法
US5635102A (en) 1994-09-28 1997-06-03 Fsi International Highly selective silicon oxide etching method
JP3512496B2 (ja) * 1994-11-25 2004-03-29 株式会社半導体エネルギー研究所 Ｓｏｉ型半導体集積回路の作製方法
JP3370806B2 (ja) * 1994-11-25 2003-01-27 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
JPH08153700A (ja) * 1994-11-25 1996-06-11 Semiconductor Energy Lab Co Ltd 導電性被膜の異方性エッチング方法
JPH08153879A (ja) 1994-11-26 1996-06-11 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH08153711A (ja) * 1994-11-26 1996-06-11 Semiconductor Energy Lab Co Ltd エッチング装置
JP3609131B2 (ja) * 1994-12-06 2005-01-12 株式会社半導体エネルギー研究所 イオンドーピング装置のクリーニング方法
US7898722B2 (en) * 1995-05-01 2011-03-01 Qualcomm Mems Technologies, Inc. Microelectromechanical device with restoring electrode
US6849471B2 (en) 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
US6969635B2 (en) * 2000-12-07 2005-11-29 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
WO1997015069A1 (en) * 1995-10-19 1997-04-24 Massachusetts Institute Of Technology Metals removal process
KR0170902B1 (ko) * 1995-12-29 1999-03-30 김주용 반도체 소자의 제조방법
US5782986A (en) * 1996-01-11 1998-07-21 Fsi International Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds
US6077451A (en) * 1996-03-28 2000-06-20 Kabushiki Kaisha Toshiba Method and apparatus for etching of silicon materials
US6132522A (en) * 1996-07-19 2000-10-17 Cfmt, Inc. Wet processing methods for the manufacture of electronic components using sequential chemical processing
US7929197B2 (en) * 1996-11-05 2011-04-19 Qualcomm Mems Technologies, Inc. System and method for a MEMS device
US7830588B2 (en) * 1996-12-19 2010-11-09 Qualcomm Mems Technologies, Inc. Method of making a light modulating display device and associated transistor circuitry and structures thereof
WO1998032163A1 (en) * 1997-01-22 1998-07-23 California Institute Of Technology Gas phase silicon etching with bromine trifluoride
US5954884A (en) 1997-03-17 1999-09-21 Fsi International Inc. UV/halogen metals removal process
US6042738A (en) * 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
US6514875B1 (en) * 1997-04-28 2003-02-04 The Regents Of The University Of California Chemical method for producing smooth surfaces on silicon wafers
US6635185B2 (en) 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
US6120697A (en) 1997-12-31 2000-09-19 Alliedsignal Inc Method of etching using hydrofluorocarbon compounds
KR100703140B1 (ko) * 1998-04-08 2007-04-05 이리다임 디스플레이 코포레이션 간섭 변조기 및 그 제조 방법
US8928967B2 (en) 1998-04-08 2015-01-06 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US6186154B1 (en) * 1998-12-07 2001-02-13 Taiwan Semiconductor Manufacturing Company Find end point of CLF3 clean by pressure change
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6207570B1 (en) 1999-08-20 2001-03-27 Lucent Technologies, Inc. Method of manufacturing integrated circuit devices
WO2003007049A1 (en) 1999-10-05 2003-01-23 Iridigm Display Corporation Photonic mems and structures
US7041224B2 (en) * 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US6942811B2 (en) * 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US6960305B2 (en) * 1999-10-26 2005-11-01 Reflectivity, Inc Methods for forming and releasing microelectromechanical structures
US6290864B1 (en) * 1999-10-26 2001-09-18 Reflectivity, Inc. Fluoride gas etching of silicon with improved selectivity
KR100327341B1 (ko) * 1999-10-27 2002-03-06 윤종용 폴리실리콘 하드 마스크를 사용하는 반도체 소자의 제조방법 및 그 제조장치
US20030010354A1 (en) * 2000-03-27 2003-01-16 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber
US6500356B2 (en) * 2000-03-27 2002-12-31 Applied Materials, Inc. Selectively etching silicon using fluorine without plasma
US7019376B2 (en) * 2000-08-11 2006-03-28 Reflectivity, Inc Micromirror array device with a small pitch size
US6843258B2 (en) * 2000-12-19 2005-01-18 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning
US6503845B1 (en) * 2001-05-01 2003-01-07 Applied Materials Inc. Method of etching a tantalum nitride layer in a high density plasma
AU2002303842A1 (en) * 2001-05-22 2002-12-03 Reflectivity, Inc. A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
US7189332B2 (en) * 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
US20030073302A1 (en) * 2001-10-12 2003-04-17 Reflectivity, Inc., A California Corporation Methods for formation of air gap interconnects
US6835616B1 (en) 2002-01-29 2004-12-28 Cypress Semiconductor Corporation Method of forming a floating metal structure in an integrated circuit
US7026235B1 (en) 2002-02-07 2006-04-11 Cypress Semiconductor Corporation Dual-damascene process and associated floating metal structures
US6649535B1 (en) * 2002-02-12 2003-11-18 Taiwan Semiconductor Manufacturing Company Method for ultra-thin gate oxide growth
US6965468B2 (en) * 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US7027200B2 (en) * 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
AU2003275018B2 (en) 2002-09-20 2009-10-01 Integrated Dna Technologies, Inc. Anthraquinone quencher dyes, their methods of preparation and use
US6730600B2 (en) * 2002-09-27 2004-05-04 Agere Systems, Inc. Method of dry etching a semiconductor device in the absence of a plasma
US6913942B2 (en) 2003-03-28 2005-07-05 Reflectvity, Inc Sacrificial layers for use in fabrications of microelectromechanical devices
US6980347B2 (en) * 2003-07-03 2005-12-27 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
US7645704B2 (en) * 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures
US6939472B2 (en) * 2003-09-17 2005-09-06 Reflectivity, Inc. Etching method in fabrications of microstructures
KR101255691B1 (ko) * 2004-07-29 2013-04-17 퀄컴 엠이엠에스 테크놀로지스, 인크. 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법
US7564612B2 (en) * 2004-09-27 2009-07-21 Idc, Llc Photonic MEMS and structures
US7630119B2 (en) * 2004-09-27 2009-12-08 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US7583429B2 (en) 2004-09-27 2009-09-01 Idc, Llc Ornamental display device
US7936497B2 (en) * 2004-09-27 2011-05-03 Qualcomm Mems Technologies, Inc. MEMS device having deformable membrane characterized by mechanical persistence
US8008736B2 (en) 2004-09-27 2011-08-30 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device
US7420725B2 (en) * 2004-09-27 2008-09-02 Idc, Llc Device having a conductive light absorbing mask and method for fabricating same
US7372613B2 (en) * 2004-09-27 2008-05-13 Idc, Llc Method and device for multistate interferometric light modulation
US7304784B2 (en) * 2004-09-27 2007-12-04 Idc, Llc Reflective display device having viewable display on both sides
US7289259B2 (en) * 2004-09-27 2007-10-30 Idc, Llc Conductive bus structure for interferometric modulator array
US7130104B2 (en) * 2004-09-27 2006-10-31 Idc, Llc Methods and devices for inhibiting tilting of a mirror in an interferometric modulator
US7527995B2 (en) * 2004-09-27 2009-05-05 Qualcomm Mems Technologies, Inc. Method of making prestructure for MEMS systems
US7944599B2 (en) * 2004-09-27 2011-05-17 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US7192875B1 (en) 2004-10-29 2007-03-20 Lam Research Corporation Processes for treating morphologically-modified silicon electrode surfaces using gas-phase interhalogens
US7226869B2 (en) * 2004-10-29 2007-06-05 Lam Research Corporation Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing
US7291286B2 (en) * 2004-12-23 2007-11-06 Lam Research Corporation Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
TW200628877A (en) * 2005-02-04 2006-08-16 Prime View Int Co Ltd Method of manufacturing optical interference type color display
US7884989B2 (en) * 2005-05-27 2011-02-08 Qualcomm Mems Technologies, Inc. White interferometric modulators and methods for forming the same
EP2495212A3 (en) * 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
CN101228092A (zh) * 2005-07-22 2008-07-23 高通股份有限公司 用于mems装置的支撑结构及其方法
DE102005047081B4 (de) * 2005-09-30 2019-01-31 Robert Bosch Gmbh Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2
US7795061B2 (en) * 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7863197B2 (en) * 2006-01-09 2011-01-04 International Business Machines Corporation Method of forming a cross-section hourglass shaped channel region for charge carrier mobility modification
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7550810B2 (en) * 2006-02-23 2009-06-23 Qualcomm Mems Technologies, Inc. MEMS device having a layer movable at asymmetric rates
US7450295B2 (en) * 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US7649671B2 (en) * 2006-06-01 2010-01-19 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
EP2038456B1 (en) * 2006-06-09 2014-03-05 Soitec System and process for high volume deposition of gallium nitride
US7527998B2 (en) * 2006-06-30 2009-05-05 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US8382898B2 (en) * 2006-11-22 2013-02-26 Soitec Methods for high volume manufacture of group III-V semiconductor materials
JP5575483B2 (ja) 2006-11-22 2014-08-20 ソイテック Ｉｉｉ−ｖ族半導体材料の大量製造装置
EP2094406B1 (en) 2006-11-22 2015-10-14 Soitec Method, apparatus and gate valve assembly for forming monocrystalline group iii-v semiconductor material
KR101353334B1 (ko) * 2006-11-22 2014-02-18 소이텍 갈륨 질화물 증착에서의 반응 가스 감소
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
WO2008064080A1 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies High volume delivery system for gallium trichloride
WO2008064083A2 (en) 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies Gallium trichloride injection scheme
US9481943B2 (en) 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
US8115987B2 (en) * 2007-02-01 2012-02-14 Qualcomm Mems Technologies, Inc. Modulating the intensity of light from an interferometric reflector
US7733552B2 (en) * 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7643202B2 (en) * 2007-05-09 2010-01-05 Qualcomm Mems Technologies, Inc. Microelectromechanical system having a dielectric movable membrane and a mirror
US7719752B2 (en) * 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7630121B2 (en) * 2007-07-02 2009-12-08 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
CN101809471B (zh) * 2007-07-31 2013-12-25 高通Mems科技公司 用于增强干涉式调制器的色彩偏移的装置
US7773286B2 (en) * 2007-09-14 2010-08-10 Qualcomm Mems Technologies, Inc. Periodic dimple array
US7847999B2 (en) 2007-09-14 2010-12-07 Qualcomm Mems Technologies, Inc. Interferometric modulator display devices
US20090078316A1 (en) * 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell
US8058549B2 (en) * 2007-10-19 2011-11-15 Qualcomm Mems Technologies, Inc. Photovoltaic devices with integrated color interferometric film stacks
WO2009052324A2 (en) * 2007-10-19 2009-04-23 Qualcomm Mems Technologies, Inc. Display with integrated photovoltaic device
JP2011504243A (ja) * 2007-10-23 2011-02-03 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド 調節可能透過型ｍｅｍｓベースの装置
US20090293955A1 (en) * 2007-11-07 2009-12-03 Qualcomm Incorporated Photovoltaics with interferometric masks
US8941631B2 (en) * 2007-11-16 2015-01-27 Qualcomm Mems Technologies, Inc. Simultaneous light collection and illumination on an active display
US7906274B2 (en) * 2007-11-21 2011-03-15 Molecular Imprints, Inc. Method of creating a template employing a lift-off process
WO2009085561A2 (en) * 2007-12-20 2009-07-09 S.O.I.Tec Silicon On Insulator Technologies Methods for in-situ chamber cleaning process for high volume manufacture of semiconductor materials
WO2009085601A2 (en) * 2007-12-21 2009-07-09 Qualcom Mems Technologies, Inc. Multijunction photovoltaic cells
JP2011512015A (ja) 2008-02-11 2011-04-14 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 半導体処理システムにおけるイオン源の洗浄
US8164821B2 (en) * 2008-02-22 2012-04-24 Qualcomm Mems Technologies, Inc. Microelectromechanical device with thermal expansion balancing layer or stiffening layer
US7944604B2 (en) 2008-03-07 2011-05-17 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US7612933B2 (en) * 2008-03-27 2009-11-03 Qualcomm Mems Technologies, Inc. Microelectromechanical device with spacing layer
US7898723B2 (en) * 2008-04-02 2011-03-01 Qualcomm Mems Technologies, Inc. Microelectromechanical systems display element with photovoltaic structure
US7969638B2 (en) * 2008-04-10 2011-06-28 Qualcomm Mems Technologies, Inc. Device having thin black mask and method of fabricating the same
US7851239B2 (en) * 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US8023167B2 (en) * 2008-06-25 2011-09-20 Qualcomm Mems Technologies, Inc. Backlight displays
US7859740B2 (en) * 2008-07-11 2010-12-28 Qualcomm Mems Technologies, Inc. Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control
US8358266B2 (en) * 2008-09-02 2013-01-22 Qualcomm Mems Technologies, Inc. Light turning device with prismatic light turning features
US20100096006A1 (en) * 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. Monolithic imod color enhanced photovoltaic cell
US20100096011A1 (en) * 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. High efficiency interferometric color filters for photovoltaic modules
US8270056B2 (en) * 2009-03-23 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with openings between sub-pixels and method of making same
CN102449513B (zh) * 2009-05-29 2015-01-21 高通Mems科技公司 照明装置及其制造方法
US8270062B2 (en) * 2009-09-17 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with at least one movable stop element
US8488228B2 (en) 2009-09-28 2013-07-16 Qualcomm Mems Technologies, Inc. Interferometric display with interferometric reflector
EP2556403A1 (en) 2010-04-09 2013-02-13 Qualcomm Mems Technologies, Inc. Mechanical layer of an electromechanical device and methods of forming the same
JP5123349B2 (ja) * 2010-04-19 2013-01-23 Ｈｏｙａ株式会社 多階調マスクの製造方法
EP2606485A1 (en) 2010-08-17 2013-06-26 Qualcomm Mems Technologies, Inc. Actuation and calibration of a charge neutral electrode in an interferometric display device
US9057872B2 (en) 2010-08-31 2015-06-16 Qualcomm Mems Technologies, Inc. Dielectric enhanced mirror for IMOD display
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US8736939B2 (en) 2011-11-04 2014-05-27 Qualcomm Mems Technologies, Inc. Matching layer thin-films for an electromechanical systems reflective display device
JP7053991B2 (ja) * 2017-03-28 2022-04-13 セントラル硝子株式会社 ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法
WO2021171986A1 (ja) * 2020-02-26 2021-09-02 昭和電工株式会社 ドライエッチング方法、半導体素子の製造方法、及びクリーニング方法
JP7489905B2 (ja) * 2020-11-30 2024-05-24 東京エレクトロン株式会社 チャンバーコンディションの診断方法及び基板処理装置
KR102821639B1 (ko) * 2020-12-23 2025-06-18 주식회사 원익아이피에스 반도체 소자 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB952543A (en) * 1961-03-07 1964-03-18 Western Electric Co Shaping of bodies by etching
NL275192A (https=) * 1961-06-30
US3095341A (en) * 1961-06-30 1963-06-25 Bell Telephone Labor Inc Photosensitive gas phase etching of semiconductors by selective radiation
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors
BE756807A (fr) * 1969-09-29 1971-03-29 Motorola Inc Procede pour la gravure non preferentielle du silicium par un melange gazeux, et melange gazeux pour cette gravure
US3669774A (en) * 1969-11-20 1972-06-13 Rca Corp Low temperature silicon etch
JPS6012779B2 (ja) * 1976-04-28 1985-04-03 株式会社日立製作所 半導体装置の製造方法
US4310380A (en) * 1980-04-07 1982-01-12 Bell Telephone Laboratories, Incorporated Plasma etching of silicon
US4314875A (en) * 1980-05-13 1982-02-09 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
JPS57193035A (en) * 1981-05-22 1982-11-27 Toshiba Corp Manufacture of semiconductor device

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FR2551583B1 (fr) 1988-09-09
GB8418797D0 (en) 1984-08-30
GB2144083A (en) 1985-02-27
HK37388A (en) 1988-05-27
KR850000775A (ko) 1985-03-09
JPS6053027A (ja) 1985-03-26
US4498953A (en) 1985-02-12
DE3427599C2 (https=) 1990-07-05
GB2144083B (en) 1986-11-26
FR2551583A1 (fr) 1985-03-08
NL8402360A (nl) 1985-02-18
CA1235630A (en) 1988-04-26

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