KR900000635B1 - 반도체 기억장치 - Google Patents
반도체 기억장치 Download PDFInfo
- Publication number
- KR900000635B1 KR900000635B1 KR1019850008857A KR850008857A KR900000635B1 KR 900000635 B1 KR900000635 B1 KR 900000635B1 KR 1019850008857 A KR1019850008857 A KR 1019850008857A KR 850008857 A KR850008857 A KR 850008857A KR 900000635 B1 KR900000635 B1 KR 900000635B1
- Authority
- KR
- South Korea
- Prior art keywords
- capacitor
- insulating film
- gate electrode
- trench
- substrate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000002955 isolation Methods 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims description 12
- 238000009413 insulation Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 238000012546 transfer Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59-262207 | 1984-12-12 | ||
JP59262207A JPS61140168A (ja) | 1984-12-12 | 1984-12-12 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860005447A KR860005447A (ko) | 1986-07-23 |
KR900000635B1 true KR900000635B1 (ko) | 1990-02-01 |
Family
ID=17372561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850008857A KR900000635B1 (ko) | 1984-12-12 | 1985-11-27 | 반도체 기억장치 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS61140168A ( ) |
KR (1) | KR900000635B1 ( ) |
DE (1) | DE3543937A1 ( ) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61184861A (ja) * | 1985-02-12 | 1986-08-18 | Matsushita Electronics Corp | 半導体装置 |
JPS62120070A (ja) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | 半導体記憶装置 |
JP2767104B2 (ja) * | 1987-03-30 | 1998-06-18 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2621181B2 (ja) * | 1987-06-12 | 1997-06-18 | 日本電気株式会社 | Mis型半導体記憶装置 |
JPH0262073A (ja) * | 1988-08-26 | 1990-03-01 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2819520B2 (ja) * | 1991-05-07 | 1998-10-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Dramセル |
JPH05175452A (ja) * | 1991-12-25 | 1993-07-13 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
US6573548B2 (en) * | 1998-08-14 | 2003-06-03 | Monolithic System Technology, Inc. | DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same |
US6468855B2 (en) | 1998-08-14 | 2002-10-22 | Monolithic System Technology, Inc. | Reduced topography DRAM cell fabricated using a modified logic process and method for operating same |
US6570206B1 (en) * | 2000-03-29 | 2003-05-27 | Hitachi, Ltd. | Semiconductor device |
US6677633B2 (en) | 2002-09-24 | 2004-01-13 | Hitachi, Ltd. | Semiconductor device |
DE102004043858A1 (de) * | 2004-09-10 | 2006-03-16 | Infineon Technologies Ag | Verfahren zur Herstellung einer Speicherzelle, einer Speicherzellenanordnung und Speicherzellenanordnung |
US7323379B2 (en) | 2005-02-03 | 2008-01-29 | Mosys, Inc. | Fabrication process for increased capacitance in an embedded DRAM memory |
US7538371B2 (en) | 2005-09-01 | 2009-05-26 | United Microelectronics Corp. | CMOS image sensor integrated with 1-T SRAM and fabrication method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017885A (en) * | 1973-10-25 | 1977-04-12 | Texas Instruments Incorporated | Large value capacitor |
JPH0666436B2 (ja) * | 1983-04-15 | 1994-08-24 | 株式会社日立製作所 | 半導体集積回路装置 |
-
1984
- 1984-12-12 JP JP59262207A patent/JPS61140168A/ja active Pending
-
1985
- 1985-11-27 KR KR1019850008857A patent/KR900000635B1/ko not_active IP Right Cessation
- 1985-12-12 DE DE19853543937 patent/DE3543937A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3543937C2 ( ) | 1989-05-24 |
JPS61140168A (ja) | 1986-06-27 |
KR860005447A (ko) | 1986-07-23 |
DE3543937A1 (de) | 1986-06-12 |
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G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
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Payment date: 20030130 Year of fee payment: 14 |
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