KR890017809A - 영속성 메모리셀 및 그것의 제조방법 - Google Patents

영속성 메모리셀 및 그것의 제조방법 Download PDF

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Publication number
KR890017809A
KR890017809A KR1019890006167A KR890006167A KR890017809A KR 890017809 A KR890017809 A KR 890017809A KR 1019890006167 A KR1019890006167 A KR 1019890006167A KR 890006167 A KR890006167 A KR 890006167A KR 890017809 A KR890017809 A KR 890017809A
Authority
KR
South Korea
Prior art keywords
groove
region
insulating layer
manufacturing
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019890006167A
Other languages
English (en)
Korean (ko)
Inventor
오토 요아힘
Original Assignee
후베르트 마이어, 챨스 카를링
오이로질 엘렉트로닉 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후베르트 마이어, 챨스 카를링, 오이로질 엘렉트로닉 게엠베하 filed Critical 후베르트 마이어, 챨스 카를링
Publication of KR890017809A publication Critical patent/KR890017809A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019890006167A 1988-05-13 1989-05-09 영속성 메모리셀 및 그것의 제조방법 Ceased KR890017809A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3816358A DE3816358A1 (de) 1988-05-13 1988-05-13 Nichtfluechtige speicherzelle und verfahren zur herstellung
DEP3816358.6 1988-05-13

Publications (1)

Publication Number Publication Date
KR890017809A true KR890017809A (ko) 1989-12-18

Family

ID=6354310

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890006167A Ceased KR890017809A (ko) 1988-05-13 1989-05-09 영속성 메모리셀 및 그것의 제조방법

Country Status (5)

Country Link
US (1) US4990979A (enExample)
EP (1) EP0341647B1 (enExample)
JP (1) JPH0218969A (enExample)
KR (1) KR890017809A (enExample)
DE (2) DE3816358A1 (enExample)

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US5343063A (en) * 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5512505A (en) * 1990-12-18 1996-04-30 Sandisk Corporation Method of making dense vertical programmable read only memory cell structure
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US5712180A (en) * 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US5313421A (en) * 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US7071060B1 (en) 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5467305A (en) * 1992-03-12 1995-11-14 International Business Machines Corporation Three-dimensional direct-write EEPROM arrays and fabrication methods
US5399516A (en) * 1992-03-12 1995-03-21 International Business Machines Corporation Method of making shadow RAM cell having a shallow trench EEPROM
US5196722A (en) * 1992-03-12 1993-03-23 International Business Machines Corporation Shadow ram cell having a shallow trench eeprom
US5315142A (en) * 1992-03-23 1994-05-24 International Business Machines Corporation High performance trench EEPROM cell
JP3159850B2 (ja) * 1993-11-08 2001-04-23 シャープ株式会社 不揮発性半導体記憶装置及びその製造方法
JPH08274198A (ja) * 1995-03-29 1996-10-18 Lg Semicon Co Ltd Ｅｅｐｒｏｍセル及びその製造方法
US5953602A (en) * 1995-05-26 1999-09-14 Lg Semicon Co., Ltd. EEPROM cell and related method of making thereof
US5606521A (en) * 1995-06-28 1997-02-25 Philips Electronics North America Corp. Electrically erasable and programmable read only memory with non-uniform dielectric thickness
US5753951A (en) * 1995-07-25 1998-05-19 International Business Machines Corporation EEPROM cell with channel hot electron programming and method for forming the same
DE19534778C1 (de) * 1995-09-19 1997-04-03 Siemens Ag Verfahren zum Erzeugen der Sourcebereiche eines Flash-EEPROM-Speicherzellenfeldes
US5777361A (en) * 1996-06-03 1998-07-07 Motorola, Inc. Single gate nonvolatile memory cell and method for accessing the same
DE19720193C2 (de) * 1997-05-14 2002-10-17 Infineon Technologies Ag Integrierte Schaltungsanordnung mit mindestens zwei vertikalen MOS-Transistoren und Verfahren zu deren Herstellung
EP1016129B2 (en) 1997-06-24 2009-06-10 Massachusetts Institute Of Technology Controlling threading dislocation densities using graded layers and planarization
US6566707B1 (en) * 1998-01-08 2003-05-20 Sanyo Electric Co., Ltd. Transistor, semiconductor memory and method of fabricating the same
US6225659B1 (en) * 1998-03-30 2001-05-01 Advanced Micro Devices, Inc. Trenched gate semiconductor device and method for low power applications
US6147377A (en) * 1998-03-30 2000-11-14 Advanced Micro Devices, Inc. Fully recessed semiconductor device
US6147378A (en) 1998-03-30 2000-11-14 Advanced Micro Devices, Inc. Fully recessed semiconductor device and method for low power applications with single wrap around buried drain region
US6097061A (en) 1998-03-30 2000-08-01 Advanced Micro Devices, Inc. Trenched gate metal oxide semiconductor device and method
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US6602613B1 (en) 2000-01-20 2003-08-05 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
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US6593191B2 (en) * 2000-05-26 2003-07-15 Amberwave Systems Corporation Buried channel strained silicon FET using a supply layer created through ion implantation
JP3573691B2 (ja) * 2000-07-03 2004-10-06 シャープ株式会社 不揮発性半導体記憶装置およびその製造方法
AU2001283138A1 (en) * 2000-08-07 2002-02-18 Amberwave Systems Corporation Gate technology for strained surface channel and strained buried channel mosfet devices
JP2004507084A (ja) * 2000-08-16 2004-03-04 マサチューセッツ　インスティテュート　オブ　テクノロジー グレーデッドエピタキシャル成長を用いた半導体品の製造プロセス
US6649480B2 (en) * 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US20020100942A1 (en) * 2000-12-04 2002-08-01 Fitzgerald Eugene A. CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US6723661B2 (en) * 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) * 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6830976B2 (en) * 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6724008B2 (en) 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6940089B2 (en) * 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
US6936887B2 (en) * 2001-05-18 2005-08-30 Sandisk Corporation Non-volatile memory cells utilizing substrate trenches
US6894343B2 (en) * 2001-05-18 2005-05-17 Sandisk Corporation Floating gate memory cells utilizing substrate trenches to scale down their size
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US7301180B2 (en) * 2001-06-18 2007-11-27 Massachusetts Institute Of Technology Structure and method for a high-speed semiconductor device having a Ge channel layer
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US7138649B2 (en) * 2001-08-09 2006-11-21 Amberwave Systems Corporation Dual-channel CMOS transistors with differentially strained channels
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US6801761B2 (en) * 2002-02-15 2004-10-05 Broadcom Corp. Programmable mixer and radio applications thereof
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US7307273B2 (en) * 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US7615829B2 (en) * 2002-06-07 2009-11-10 Amberwave Systems Corporation Elevated source and drain elements for strained-channel heterojuntion field-effect transistors
US7335545B2 (en) * 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US7138310B2 (en) * 2002-06-07 2006-11-21 Amberwave Systems Corporation Semiconductor devices having strained dual channel layers
US6946371B2 (en) * 2002-06-10 2005-09-20 Amberwave Systems Corporation Methods of fabricating semiconductor structures having epitaxially grown source and drain elements
US6982474B2 (en) * 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
EP2267762A3 (en) 2002-08-23 2012-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor heterostructures having reduced dislocation pile-ups and related methods
US7594967B2 (en) * 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
EP2337062A3 (en) * 2003-01-27 2016-05-04 Taiwan Semiconductor Manufacturing Company, Limited Method for making semiconductor structures with structural homogeneity
CN100437970C (zh) * 2003-03-07 2008-11-26 琥珀波系统公司 一种结构及用于形成半导体结构的方法
KR100567624B1 (ko) * 2004-06-15 2006-04-04 삼성전자주식회사 반도체 장치의 제조 방법
US7393733B2 (en) * 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
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US4471471A (en) * 1981-12-31 1984-09-11 International Business Machines Corporation Non-volatile RAM device
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US4796228A (en) * 1986-06-02 1989-01-03 Texas Instruments Incorporated Erasable electrically programmable read only memory cell using trench edge tunnelling

Also Published As

Publication number Publication date
EP0341647A3 (en) 1990-08-16
DE3816358C2 (enExample) 1991-07-04
US4990979A (en) 1991-02-05
DE3816358A1 (de) 1989-11-23
EP0341647B1 (de) 1992-12-16
DE58902995D1 (de) 1993-01-28
EP0341647A2 (de) 1989-11-15
JPH0218969A (ja) 1990-01-23

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