KR890017201A - 질화알루미늄소결체와 그것을 사용한 회로기판 및 반도체패키지 - Google Patents
질화알루미늄소결체와 그것을 사용한 회로기판 및 반도체패키지 Download PDFInfo
- Publication number
- KR890017201A KR890017201A KR1019890006465A KR890006465A KR890017201A KR 890017201 A KR890017201 A KR 890017201A KR 1019890006465 A KR1019890006465 A KR 1019890006465A KR 890006465 A KR890006465 A KR 890006465A KR 890017201 A KR890017201 A KR 890017201A
- Authority
- KR
- South Korea
- Prior art keywords
- aluminum nitride
- circuit board
- sintered body
- nitride sintered
- thermal conductivity
- Prior art date
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims 8
- 239000004065 semiconductor Substances 0.000 title claims 2
- 229910052689 Holmium Inorganic materials 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (3)
- 질화알루미늄을 주성분으로 하고, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Nd 및 Ho로 이루어진군으로부터 선택된 적어도 1종의 천이금곡원소 및/또는 그 화합물을 1.0중량% 이하, 0.01중량% 이상 함유하고, 착색을 나타내고, 또한 열전도율이 I50w/mk 이상인것을 특징으로 하는 질화알루미늄소결체.
- 질화알루미늄을 주성분으로 하고, 열전도율이 150w/mk 이상이고 착색을 나타낸 질화알루미늄소결체상에, 도전성페이스트에 의해 회로를 형성한 것을 특징으로 하는 질화알루미늄회로기판.
- 질화알루미늄을 주성분으로 하고, 열전도율이 150w/mk 이상이고 착색을 나타낸 질화알루미늄소결체기판과 반도체소자와 리이드프레임으로 이루어진 고열전도성 세라믹패키지.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11684388 | 1988-05-16 | ||
| JP63-116843 | 1988-05-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR890017201A true KR890017201A (ko) | 1989-12-15 |
| KR920003226B1 KR920003226B1 (ko) | 1992-04-24 |
Family
ID=14697000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890006465A KR920003226B1 (ko) | 1988-05-16 | 1989-05-15 | 질화알루미늄소결체와 그것을 사용한 회로기판 및 반도체패키지 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0342595B1 (ko) |
| KR (1) | KR920003226B1 (ko) |
| CA (1) | CA1336334C (ko) |
| DE (1) | DE68909836T2 (ko) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03257071A (ja) * | 1989-11-30 | 1991-11-15 | Toshiba Corp | 遮光性窒化アルミニウム焼結体及びその製造方法 |
| JP2567491B2 (ja) * | 1990-04-17 | 1996-12-25 | 住友電気工業株式会社 | 高熱伝導性着色窒化アルミニウム焼結体およびその製造方法 |
| JPH0492864A (ja) * | 1990-08-06 | 1992-03-25 | Sumitomo Electric Ind Ltd | 窒化アルミニウム粉末および焼結体およびその製造法 |
| JP2943275B2 (ja) * | 1990-08-07 | 1999-08-30 | 住友電気工業株式会社 | 高熱伝導性着色窒化アルミニウム焼結体およびその製造方法 |
| US5273700A (en) * | 1990-10-29 | 1993-12-28 | Sumitomo Electric Industries Ltd. | Aluminum nitride sintered body and process for producing the same |
| KR102339550B1 (ko) * | 2017-06-30 | 2021-12-17 | 주식회사 미코세라믹스 | 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재 |
| CN114195523A (zh) * | 2021-12-21 | 2022-03-18 | 河北中瓷电子科技股份有限公司 | 一种3D-sensor用黑色氮化铝陶瓷外壳及其制备方法 |
| CN115724665A (zh) * | 2022-12-09 | 2023-03-03 | 南方科技大学 | 一种氮化铝基板及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3627317A1 (de) * | 1985-08-13 | 1987-02-19 | Tokuyama Soda Kk | Sinterbare aluminiumnitridzusammensetzung, sinterkoerper aus dieser zusammensetzung und verfahren zu seiner herstellung |
| DE3608326A1 (de) * | 1986-03-13 | 1987-09-17 | Kempten Elektroschmelz Gmbh | Praktisch porenfreie formkoerper aus polykristallinem aluminiumnitrid und verfahren zu ihrer herstellung ohne mitverwendung von sinterhilfsmitteln |
| JPS6389463A (ja) * | 1986-09-30 | 1988-04-20 | 株式会社東芝 | 高熱伝導性窒化アルミニウム焼結体 |
| US4833108A (en) * | 1987-03-28 | 1989-05-23 | Narumi China Corporation | Sintered body of aluminum nitride |
| JPH01203270A (ja) * | 1988-02-08 | 1989-08-16 | Sumitomo Electric Ind Ltd | 高熱伝導性窒化アルミニウム焼結体及びその製造法 |
-
1989
- 1989-05-15 KR KR1019890006465A patent/KR920003226B1/ko not_active IP Right Cessation
- 1989-05-16 DE DE89108762T patent/DE68909836T2/de not_active Expired - Lifetime
- 1989-05-16 CA CA000599860A patent/CA1336334C/en not_active Expired - Fee Related
- 1989-05-16 EP EP89108762A patent/EP0342595B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR920003226B1 (ko) | 1992-04-24 |
| DE68909836D1 (de) | 1993-11-18 |
| DE68909836T2 (de) | 1994-05-11 |
| EP0342595B1 (en) | 1993-10-13 |
| EP0342595A3 (en) | 1990-04-11 |
| CA1336334C (en) | 1995-07-18 |
| EP0342595A2 (en) | 1989-11-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR890001180A (ko) | 세라믹 패키지 | |
| KR900019207A (ko) | 수지밀봉형 반도체장치 | |
| KR910008854A (ko) | 전기 또는 전자회로의 성형에 사용되는 세라믹기판 | |
| KR880000998A (ko) | 단자캡이 있는 전자부품 | |
| KR880003427A (ko) | 반도체 장치 및 그에 사용되는 리드프레임 | |
| KR890003076A (ko) | 전자기기 장치 | |
| KR920013937A (ko) | 반도체집적회로 | |
| KR890017201A (ko) | 질화알루미늄소결체와 그것을 사용한 회로기판 및 반도체패키지 | |
| KR920007164A (ko) | 다층 리드프레임 | |
| KR910017604A (ko) | 반도체장치 | |
| KR910007094A (ko) | 수지밀봉형 반도체장치 | |
| KR900011018A (ko) | 반도체장치 | |
| KR910007159A (ko) | Mos형 반도체장치 | |
| KR910019190A (ko) | 리드프레임 및 그 제조방법 | |
| KR970060278A (ko) | 유전체 세라믹 조성물 | |
| KR870006648A (ko) | 수지밀봉 반도체 장치용 리드 프레임(Lead frame) | |
| KR910001924A (ko) | 반도체 장치 | |
| KR870005454A (ko) | 다이오드와 그 금속제 스터드 | |
| KR950012613A (ko) | 반도체 장치 및 그 제조 방법 | |
| KR930015991A (ko) | 표면 실장형 SOP(small Out-line Package)의 PCB 실장구조 | |
| KR870004400A (ko) | 박막자기헤드 | |
| KR910005431A (ko) | 집적회로장치 및 그 제조방법 | |
| ATE218245T1 (de) | Flächiges teil für halbleitergehäuse | |
| SE0003050D0 (sv) | Komposit | |
| KR930014937A (ko) | 반도체장치에 사용되는 리드 프레임 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20090410 Year of fee payment: 18 |
|
| EXPY | Expiration of term |