KR890004359A - 도우핑된 BaTiO₃ 기초 조성물 - Google Patents
도우핑된 BaTiO₃ 기초 조성물 Download PDFInfo
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- KR890004359A KR890004359A KR1019880010295A KR880010295A KR890004359A KR 890004359 A KR890004359 A KR 890004359A KR 1019880010295 A KR1019880010295 A KR 1019880010295A KR 880010295 A KR880010295 A KR 880010295A KR 890004359 A KR890004359 A KR 890004359A
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- Prior art keywords
- doped
- barium titanate
- copolymer
- less
- particle size
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- 229910002113 barium titanate Inorganic materials 0.000 title claims description 17
- 239000000203 mixture Substances 0.000 title claims 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 16
- 239000002019 doping agent Substances 0.000 claims description 8
- 229920001577 copolymer Polymers 0.000 claims 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 238000010191 image analysis Methods 0.000 claims 6
- 239000002245 particle Substances 0.000 claims 6
- 239000011164 primary particle Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 claims 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052787 antimony Inorganic materials 0.000 claims 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 3
- 229910052788 barium Inorganic materials 0.000 claims 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 3
- 229910052797 bismuth Inorganic materials 0.000 claims 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 3
- 229910052796 boron Inorganic materials 0.000 claims 3
- 229910052793 cadmium Inorganic materials 0.000 claims 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 3
- 239000011651 chromium Substances 0.000 claims 3
- 229910017052 cobalt Inorganic materials 0.000 claims 3
- 239000010941 cobalt Substances 0.000 claims 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- 229910052742 iron Inorganic materials 0.000 claims 3
- 229910052747 lanthanoid Inorganic materials 0.000 claims 3
- 150000002602 lanthanoids Chemical class 0.000 claims 3
- 229910052749 magnesium Inorganic materials 0.000 claims 3
- 239000011777 magnesium Substances 0.000 claims 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 239000011733 molybdenum Substances 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052758 niobium Inorganic materials 0.000 claims 3
- 239000010955 niobium Substances 0.000 claims 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 3
- 238000004062 sedimentation Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910052709 silver Inorganic materials 0.000 claims 3
- 239000004332 silver Substances 0.000 claims 3
- 239000012798 spherical particle Substances 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 239000010937 tungsten Substances 0.000 claims 3
- 229910052720 vanadium Inorganic materials 0.000 claims 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 3
- 229910052727 yttrium Inorganic materials 0.000 claims 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 3
- 229910052725 zinc Inorganic materials 0.000 claims 3
- 239000011701 zinc Substances 0.000 claims 3
- 239000002131 composite material Substances 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G27/00—Compounds of hafnium
- C01G27/006—Compounds containing, besides hafnium, two or more other elements, with the exception of oxygen or hydrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/003—Titanates
- C01G23/006—Alkaline earth titanates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/006—Compounds containing, besides zirconium, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
- C01P2004/32—Spheres
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/51—Particles with a specific particle size distribution
- C01P2004/52—Particles with a specific particle size distribution highly monodisperse size distribution
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geology (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Environmental & Geological Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 하기 일반식 1.02Ba0.811Pb0.105Ca0.081Sr0.003O·Ti0.832Sn0.074Zr0.094O2·0.012CoO·0.009MnO·0.005Nb2O5으로 표시되는 본 발명에 의한 분산성의 극미한 다중도판트 복합 코포옴의 50,000x배율 투과 전자 현미경 사진, 제2도는 하기 일반식 0.998Ba0.0792Pb0.014Ca0.098Sr0.006O·Ti0.831Sn0.070Zr0.099O2·0.03CoO으로 표시되는 단일 도판트 복합 티탄산바륨 코포옴으 50,000x배율 투과 전자 현미경 사진.
Claims (18)
- 하기 일반식으로 표시되는 실질적으로 구상인 입자들로 되며, 도우핑된 코포옴의 평균 1차 입도가 0.05 내지 0.4 미크론 범위인 것을 특징으로 하는 도우핑된 티탄산바륨 기초 코포옴.상기식중, X 및 Y는 0.9와 1.1사이의 값을 갖고, Z는 0이상 0.1미만의 값을 갖고, y, y' 및 y는 0내지 0.3범위으 독립적인 값을 갖고 y + y' + y의 합은 0.4미만이고, x'는 0이상 0.4미만이고, D는 적어도 1종으 도판트 산화물이다.
- 제1항에 있어서, 적어도 1종의 도판트 산화물 D가 란타니드 계열, 코발트, 망간, 마그네슘, 이트륨, 비스무트, 알루미늄, 붕소, 텅스텐, 니오붐, 크롬, 니켈, 몰리브덴, 철, 안티몬, 바나듐, 탄탈, 구리, 은, 아연, 카드뮴, 규소의 산화물 및 이들의 혼합물로 구성되는 군중에서 선택되는 것을 특징으로 하는 타탄산바륨의 도우핑된 코포옴.
- 제1항에 있어서, 이미지 분석법 및 침강법에 의해 측정된 1차 입도가 2자리 인수내에서 일치하는 것을 특징으로 하는 티탄산바륨의 도우핑된 코포옴.
- 제1항에 있어서, 도우핑된 코포옴이 이미지 분석법에 의해 측정했을 때 좁은 입도 분포를 갖고, 도우핑된 코포옴의 1차 입도분포 곡선이 2.0 이하의 사분치 비를 갖는 것을 특징으로 하는 티탄산바륨의 도우핑된 코포옴.
- 제1항에 있어서, X/Y비가 1.000±0.015인 것을 특징으로 하는 티탄산바륨의 도우핑된 코포옴.
- 제1항에 있어서, X/Y비가 0.95 내지 1.1범위인 것을 특징으로 하는 티탄산바륨의 도우핑된 코포옴.
- 하기 일반식으로 표시되는 실질적으로 구상인 입자들로 되며, 도우핑된 코포옴의 평균 1차 입도가 0.05 내지 0.4미크론 범위인 것을 특징으로 하는 도우핑된 티탄산바륨 기초 코포옴.상기식중, X 및 Y는 0.9와 1.1사이의 값을 갖고, Z는 0이상 0.1미만의 값을 갖고, y, y' 및 y는 0 내지 0.3범위의 독립적인 값을 갖고, y + y' + y의 합은 0.4미만이고, x'는 0이상 0.4미만이고, D는 적어도 1종의 도판트 산화물이다.
- 제7항에 있어서, 적어도 1종의 도판트 산화물 D가 란타니드 계열, 코발트, 망간, 마그네슘, 이트륨, 비스무트, 알루미늄, 붕소, 텅스텐, 니오붐, 크롬, 니켈, 몰리브덴, 철, 안티몬, 바나듐, 탄탈, 구리, 은, 아연, 카드뮴, 규소의 산화물 및 이들의 혼합물로 구성되는 군중에서 선택되는 것을 특징으로 하는 타탄산바륨의 도우핑된 코포옴.
- 제7항에 있어서, 이미지 분석법 및 침강법에 의해 측정된 1차 입도가 2자리 인수내에서 일치하는 것을 특징으로하는 티탄산바륨의 도우핑된 코폼옴.
- 제7항에 있어서, 도우핑된 코포옴의 이미지 분석법에 의해 측정했을 때 좁은 입도 분포를 갖고, 도우핑된 코포옴의 1차 입도분포 곡선이 2.0이하의 사분치 비를 갖는 것을 특징으로 하는 티탄산바륨의 도우핑된 코포옴.
- 제7항에 있어서, X/Y비가 1.000±0.015인 것을 특징으로 하는 티탄산바륨의 도우핑된 코포옴.
- 제7항에 있어서, X/Y비가 0.95 내지 1.1범위인 것을 특징으로 하는 티탄산바륨의 도우핑된 코포옴.
- 하기 일반식으로 표시되는 실질적으로 구상인 입자들로 되며, 도우핑된 코포옴의 평균 1차 입도가 0.05 내지 0.4미크론 범위인 것을 특징으로 하는 도우핑된 티탄산바륨 기초 코포옴.상기식중, X 및 Y는 0.9와 1.1사이의 값을 갖고, Z는 0이상 0.1미만의 값을 갖고, x, x', x, y, y' 및 y는 각각 0이상 0.3미만의 독립적인 값을 갖고, x + x' + x의 합은 0.4미만이고 y + y' + y의 합은 0.4미만이고, D는 적어도 1종의 도판트 산화물이다.
- 제13항에 있어서, 적어도 1종의 도판트 산화물 D가 란타니드 계열, 코발트, 망간, 마그네슘, 이트륨, 비스무트, 알루미늄, 붕소, 텅스텐, 니오붐, 크롬, 니켈, 몰리브덴, 철, 안티몬, 바나듐, 탄탈, 구리, 은, 아연, 카드뮴, 규소의 산화물 및 이들의 혼합물로 구성되는 군중에서 선택되는 것을 특징으로 하는 타탄산바륨의 도우핑된 코포옴.
- 제13항에 있어서, 이미지 분석법 및 침강법에 의해 측정된 1차 입도가 2자리 인수내에서 일치하는 것을 특징으로하는 티탄산바륨의 도우핑된 코폼옴.
- 제13항에 있어서, 도우핑된 코포옴의 이미지 분석법에 의해 측정했을 때 좁은 입도 분포를 갖고, 도우핑된 코포옴의 1차 입도분포 곡선이 1.5 이하의 사분치 비를 갖는 것을 특징으로 하는 티탄산바륨의 도우핑된 코포옴.
- 제13항에 있어서, X/Y비가 1.000±0.015인 것을 특징으로 하는 티탄산바륨의 도우핑된 코포옴.
- 제13항에 있어서, X/Y비가 0.95 내지 1.1범위인 것을 특징으로 하는 티탄산바륨의 도우핑된 코포옴.※ 참고사항 : 최초출원내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8504387A | 1987-08-12 | 1987-08-12 | |
US085.043 | 1987-08-12 | ||
US085,043 | 1987-08-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890004359A true KR890004359A (ko) | 1989-04-21 |
KR970004271B1 KR970004271B1 (ko) | 1997-03-26 |
Family
ID=22189096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880010295A KR970004271B1 (ko) | 1987-08-12 | 1988-08-12 | 도우핑된 BaTiO₃기재 조성물 |
Country Status (11)
Country | Link |
---|---|
JP (1) | JP2532599B2 (ko) |
KR (1) | KR970004271B1 (ko) |
CN (1) | CN1016962B (ko) |
DE (1) | DE3826801C2 (ko) |
ES (1) | ES2006956A6 (ko) |
FR (1) | FR2619370B1 (ko) |
GB (1) | GB2208644B (ko) |
HK (1) | HK994A (ko) |
IE (1) | IE61487B1 (ko) |
IT (1) | IT1226738B (ko) |
MX (1) | MX169172B (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19635406B4 (de) * | 1996-08-31 | 2005-09-01 | Philips Intellectual Property & Standards Gmbh | Kondensator und Vielschichtkondensator mit einem Dielektrium aus wolframhaltiger BCZT-Keramik |
DE19744857A1 (de) * | 1997-10-10 | 1999-05-06 | Fraunhofer Ges Forschung | Nanokristalliner Sensor und Herstellungsverfahren |
CN1054166C (zh) * | 1997-11-14 | 2000-07-05 | 中国科学院固体物理研究所 | 尺寸可控的纳米级银颗粒镶嵌在钛酸钡薄膜中的制备方法 |
US6129903A (en) * | 1998-07-01 | 2000-10-10 | Cabot Corportion | Hydrothermal process for making barium titanate powders |
JP4446324B2 (ja) | 2001-09-27 | 2010-04-07 | 株式会社村田製作所 | 誘電体磁器組成物及びそれを用いたコンデンサ |
JP4201242B2 (ja) * | 2002-03-26 | 2008-12-24 | Tdk株式会社 | 高誘電率誘電体磁器組成物 |
US6960546B2 (en) | 2002-09-27 | 2005-11-01 | Paratek Microwave, Inc. | Dielectric composite materials including an electronically tunable dielectric phase and a calcium and oxygen-containing compound phase |
EP2328193B1 (en) * | 2009-11-30 | 2015-03-11 | Canon Kabushiki Kaisha | Piezoelectric ceramic, method for making the same, piezoelectric element, liquid discharge head, and ultrasonic motor |
CN113603498B (zh) * | 2020-12-30 | 2022-09-30 | 苏州金宏气体股份有限公司 | 钴掺杂BaTiO3压电陶瓷、其制法及高纯制氢 |
CN112759385B (zh) * | 2021-01-06 | 2021-12-14 | 中国科学院福建物质结构研究所 | 一种钙钛矿陶瓷材料及其制备方法与应用 |
CN115872735B (zh) * | 2022-11-18 | 2024-01-16 | 广东工业大学 | 一种锆锡铪酸镧铅陶瓷及其制备方法和储能应用 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US3637531A (en) * | 1970-05-01 | 1972-01-25 | Texas Instruments Inc | Method for making ceramic titanate elements and materials therefor |
US4061583A (en) * | 1974-03-13 | 1977-12-06 | Murata Manufacturing Co., Ltd. | Preparation of titanates |
JPS5552211A (en) * | 1978-10-13 | 1980-04-16 | Suwa Seikosha Kk | Temperature compensating capacitor and method of manufacturing same |
DE2941304A1 (de) * | 1978-10-13 | 1980-04-30 | Suwa Seikosha Kk | Dielektrikum, verfahren zu dessen herstellung, und dessen anwendung in kondensatoren fuer temperaturkompensationszwecke |
US4233282A (en) * | 1979-10-18 | 1980-11-11 | General Electric Company | Molten salt synthesis of barium and/or strontium titanate powder |
DE3165390D1 (en) * | 1980-06-30 | 1984-09-13 | Centralab Inc | Ceramic dielectric for base metal electrode capacitors and method of manufacture |
US4293534A (en) * | 1980-08-22 | 1981-10-06 | General Electric Company | Molten salt synthesis of alkaline earth titanates, zirconates and their solid solutions |
DE3106136A1 (de) * | 1981-02-19 | 1982-08-19 | Draloric Electronic GmbH, 8672 Selb | Verfahren zur herstellung polykristalliner keramischer kaltleiterkoerper |
US4487755A (en) * | 1982-07-01 | 1984-12-11 | General Electric Company | Preparation of large crystal sized barium and/or strontium titanate powder |
US4537865A (en) * | 1984-07-11 | 1985-08-27 | Murata Manufacturing Co., Ltd. | Process for preparing a particulate ceramic material |
JPS6131345A (ja) * | 1984-07-25 | 1986-02-13 | 堺化学工業株式会社 | 組成物の製造方法 |
JPS61111957A (ja) * | 1984-11-02 | 1986-05-30 | 堺化学工業株式会社 | セラミック誘電体の製造方法 |
MX172902B (es) * | 1986-05-05 | 1994-01-20 | Cabot Corp | Coformas de titanato de bario |
GB2193713B (en) * | 1986-07-14 | 1990-12-05 | Cabot Corp | Method of producing perovskite-type compounds. |
DE3723082C2 (de) * | 1986-07-14 | 2003-09-25 | Cabot Corp | Verfahren zur Herstellung von submikronen Perovskiten |
-
1988
- 1988-05-24 ES ES8801633A patent/ES2006956A6/es not_active Expired
- 1988-08-06 DE DE3826801A patent/DE3826801C2/de not_active Expired - Fee Related
- 1988-08-10 GB GB8818969A patent/GB2208644B/en not_active Expired - Fee Related
- 1988-08-10 MX MX012622A patent/MX169172B/es unknown
- 1988-08-11 FR FR8810833A patent/FR2619370B1/fr not_active Expired - Fee Related
- 1988-08-11 IE IE245088A patent/IE61487B1/en not_active IP Right Cessation
- 1988-08-12 IT IT8821706A patent/IT1226738B/it active
- 1988-08-12 CN CN88106966A patent/CN1016962B/zh not_active Expired
- 1988-08-12 KR KR1019880010295A patent/KR970004271B1/ko not_active IP Right Cessation
- 1988-08-12 JP JP63201830A patent/JP2532599B2/ja not_active Expired - Fee Related
-
1994
- 1994-01-06 HK HK9/94A patent/HK994A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
IT1226738B (it) | 1991-02-05 |
GB2208644A (en) | 1989-04-12 |
CN1016962B (zh) | 1992-06-10 |
MX169172B (es) | 1993-06-23 |
JP2532599B2 (ja) | 1996-09-11 |
IE61487B1 (en) | 1994-11-02 |
ES2006956A6 (es) | 1989-05-16 |
DE3826801A1 (de) | 1989-02-23 |
DE3826801C2 (de) | 2003-05-15 |
IE882450L (en) | 1989-02-12 |
HK994A (en) | 1994-01-14 |
IT8821706A0 (it) | 1988-08-12 |
GB2208644B (en) | 1991-11-13 |
FR2619370A1 (fr) | 1989-02-17 |
CN1033977A (zh) | 1989-07-19 |
GB8818969D0 (en) | 1988-09-14 |
FR2619370B1 (fr) | 1993-12-17 |
JPH01133974A (ja) | 1989-05-26 |
KR970004271B1 (ko) | 1997-03-26 |
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