GB2208644B - Doped batio3 based compositions - Google Patents

Doped batio3 based compositions

Info

Publication number
GB2208644B
GB2208644B GB8818969A GB8818969A GB2208644B GB 2208644 B GB2208644 B GB 2208644B GB 8818969 A GB8818969 A GB 8818969A GB 8818969 A GB8818969 A GB 8818969A GB 2208644 B GB2208644 B GB 2208644B
Authority
GB
United Kingdom
Prior art keywords
based compositions
doped batio3
doped
batio3 based
compositions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8818969A
Other languages
English (en)
Other versions
GB2208644A (en
GB8818969D0 (en
Inventor
Jameel Menashi
Robert C Reid
Laurence P Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of GB8818969D0 publication Critical patent/GB8818969D0/en
Publication of GB2208644A publication Critical patent/GB2208644A/en
Application granted granted Critical
Publication of GB2208644B publication Critical patent/GB2208644B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G27/00—Compounds of hafnium
    • C01G27/006—Compounds containing, besides hafnium, two or more other elements, with the exception of oxygen or hydrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/003—Titanates
    • C01G23/006—Alkaline earth titanates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00—Compounds of zirconium
    • C01G25/006—Compounds containing, besides zirconium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C01P2004/52—Particles with a specific particle size distribution highly monodisperse size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)
GB8818969A 1987-08-12 1988-08-10 Doped batio3 based compositions Expired - Fee Related GB2208644B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8504387A 1987-08-12 1987-08-12

Publications (3)

Publication Number Publication Date
GB8818969D0 GB8818969D0 (en) 1988-09-14
GB2208644A GB2208644A (en) 1989-04-12
GB2208644B true GB2208644B (en) 1991-11-13

Family

ID=22189096

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8818969A Expired - Fee Related GB2208644B (en) 1987-08-12 1988-08-10 Doped batio3 based compositions

Country Status (11)

Country Link
JP (1) JP2532599B2 (ko)
KR (1) KR970004271B1 (ko)
CN (1) CN1016962B (ko)
DE (1) DE3826801C2 (ko)
ES (1) ES2006956A6 (ko)
FR (1) FR2619370B1 (ko)
GB (1) GB2208644B (ko)
HK (1) HK994A (ko)
IE (1) IE61487B1 (ko)
IT (1) IT1226738B (ko)
MX (1) MX169172B (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19635406B4 (de) * 1996-08-31 2005-09-01 Philips Intellectual Property & Standards Gmbh Kondensator und Vielschichtkondensator mit einem Dielektrium aus wolframhaltiger BCZT-Keramik
DE19744857A1 (de) * 1997-10-10 1999-05-06 Fraunhofer Ges Forschung Nanokristalliner Sensor und Herstellungsverfahren
CN1054166C (zh) * 1997-11-14 2000-07-05 中国科学院固体物理研究所 尺寸可控的纳米级银颗粒镶嵌在钛酸钡薄膜中的制备方法
EP1017625B1 (en) * 1998-07-01 2002-09-11 Cabot Corporation Hydrothermal process for making barium titanate powders
JP4446324B2 (ja) 2001-09-27 2010-04-07 株式会社村田製作所 誘電体磁器組成物及びそれを用いたコンデンサ
JP4201242B2 (ja) * 2002-03-26 2008-12-24 Ｔｄｋ株式会社 高誘電率誘電体磁器組成物
US6960546B2 (en) 2002-09-27 2005-11-01 Paratek Microwave, Inc. Dielectric composite materials including an electronically tunable dielectric phase and a calcium and oxygen-containing compound phase
EP2328193B1 (en) * 2009-11-30 2015-03-11 Canon Kabushiki Kaisha Piezoelectric ceramic, method for making the same, piezoelectric element, liquid discharge head, and ultrasonic motor
CN113603498B (zh) * 2020-12-30 2022-09-30 苏州金宏气体股份有限公司 钴掺杂BaTiO3压电陶瓷、其制法及高纯制氢
CN112759385B (zh) * 2021-01-06 2021-12-14 中国科学院福建物质结构研究所 一种钙钛矿陶瓷材料及其制备方法与应用
CN115872735B (zh) * 2022-11-18 2024-01-16 广东工业大学 一种锆锡铪酸镧铅陶瓷及其制备方法和储能应用

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3637531A (en) * 1970-05-01 1972-01-25 Texas Instruments Inc Method for making ceramic titanate elements and materials therefor
US4061583A (en) * 1974-03-13 1977-12-06 Murata Manufacturing Co., Ltd. Preparation of titanates
DE2941304A1 (de) * 1978-10-13 1980-04-30 Suwa Seikosha Kk Dielektrikum, verfahren zu dessen herstellung, und dessen anwendung in kondensatoren fuer temperaturkompensationszwecke
JPS5552211A (en) * 1978-10-13 1980-04-16 Suwa Seikosha Kk Temperature compensating capacitor and method of manufacturing same
US4233282A (en) * 1979-10-18 1980-11-11 General Electric Company Molten salt synthesis of barium and/or strontium titanate powder
EP0043157B1 (en) * 1980-06-30 1984-08-08 Centralab Inc. Ceramic dielectric for base metal electrode capacitors and method of manufacture
US4293534A (en) * 1980-08-22 1981-10-06 General Electric Company Molten salt synthesis of alkaline earth titanates, zirconates and their solid solutions
DE3106136A1 (de) * 1981-02-19 1982-08-19 Draloric Electronic GmbH, 8672 Selb Verfahren zur herstellung polykristalliner keramischer kaltleiterkoerper
US4487755A (en) * 1982-07-01 1984-12-11 General Electric Company Preparation of large crystal sized barium and/or strontium titanate powder
US4537865A (en) * 1984-07-11 1985-08-27 Murata Manufacturing Co., Ltd. Process for preparing a particulate ceramic material
JPS6131345A (ja) * 1984-07-25 1986-02-13 堺化学工業株式会社 組成物の製造方法
JPS61111957A (ja) * 1984-11-02 1986-05-30 堺化学工業株式会社 セラミック誘電体の製造方法
MX172902B (es) * 1986-05-05 1994-01-20 Cabot Corp Coformas de titanato de bario
GB2193713B (en) * 1986-07-14 1990-12-05 Cabot Corp Method of producing perovskite-type compounds.
DE3723082C2 (de) * 1986-07-14 2003-09-25 Cabot Corp Verfahren zur Herstellung von submikronen Perovskiten

Also Published As

Publication number Publication date
HK994A (en) 1994-01-14
DE3826801C2 (de) 2003-05-15
JP2532599B2 (ja) 1996-09-11
IE61487B1 (en) 1994-11-02
MX169172B (es) 1993-06-23
CN1033977A (zh) 1989-07-19
GB2208644A (en) 1989-04-12
GB8818969D0 (en) 1988-09-14
JPH01133974A (ja) 1989-05-26
IT1226738B (it) 1991-02-05
CN1016962B (zh) 1992-06-10
IE882450L (en) 1989-02-12
KR890004359A (ko) 1989-04-21
FR2619370B1 (fr) 1993-12-17
KR970004271B1 (ko) 1997-03-26
ES2006956A6 (es) 1989-05-16
FR2619370A1 (fr) 1989-02-17
IT8821706A0 (it) 1988-08-12
DE3826801A1 (de) 1989-02-23

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20050810