KR880014688A - 턴넬링 에미터 접속단자를 사용한 쌍극성 직접회로 전계효과 트랜지스터 - Google Patents
턴넬링 에미터 접속단자를 사용한 쌍극성 직접회로 전계효과 트랜지스터 Download PDFInfo
- Publication number
- KR880014688A KR880014688A KR870004996A KR870004996A KR880014688A KR 880014688 A KR880014688 A KR 880014688A KR 870004996 A KR870004996 A KR 870004996A KR 870004996 A KR870004996 A KR 870004996A KR 880014688 A KR880014688 A KR 880014688A
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- effect transistor
- field effect
- connection terminal
- emitter connection
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title claims 2
- 239000000463 material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000005641 tunneling Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 구성을 보인 단면도, 제2도 (a)-(g)는 본 발명의 제조과정을 보인 단면도.
Claims (1)
- n형 에피텍셜층(2)위에 형성된 필드 산화물층(6)에 개구(7) (8)을 형성하고 개구(7)의 하부에 P+형 소오스 접속단자(5)를 형성하며, 양측개구(7) (8) 사이의 중간 산화물층(6a)에서 돌출부(6b)를 연장 형성하는 동시에 타측개구(8)의 저부에는 턴넬링 산화물(9)을 성장시키며, 에피텍셜층(2)이 형성된 n+형 기판(1)의 배면과 양측개구(7) (8)에 Al재 콜렉터 접속단자(12), 소오스 접속단자(10) 및 에미터 접속단자(11)를 각각 형성하여 구성함을 특징으로 하는 턴넬링 에미터 접속단자를 사용한 쌍극성 집적회로 전계효과 트랜지스터.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019870004996A KR890004642B1 (ko) | 1987-05-20 | 1987-05-20 | 턴넬링 에미터 접속단자를 사용한 쌍극성 집적회로 전계효과 트랜지스터 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019870004996A KR890004642B1 (ko) | 1987-05-20 | 1987-05-20 | 턴넬링 에미터 접속단자를 사용한 쌍극성 집적회로 전계효과 트랜지스터 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR880014688A true KR880014688A (ko) | 1988-12-24 |
| KR890004642B1 KR890004642B1 (ko) | 1989-11-21 |
Family
ID=19261530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019870004996A KR890004642B1 (ko) | 1987-05-20 | 1987-05-20 | 턴넬링 에미터 접속단자를 사용한 쌍극성 집적회로 전계효과 트랜지스터 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR890004642B1 (ko) |
-
1987
- 1987-05-20 KR KR1019870004996A patent/KR890004642B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR890004642B1 (ko) | 1989-11-21 |
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| GRNT | Written decision to grant | ||
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Payment date: 19941227 Year of fee payment: 7 |
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