KR870001658A - 반도체집적회로의 구조 및 제조방법 - Google Patents
반도체집적회로의 구조 및 제조방법 Download PDFInfo
- Publication number
- KR870001658A KR870001658A KR1019850005078A KR850005078A KR870001658A KR 870001658 A KR870001658 A KR 870001658A KR 1019850005078 A KR1019850005078 A KR 1019850005078A KR 850005078 A KR850005078 A KR 850005078A KR 870001658 A KR870001658 A KR 870001658A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor integrated
- integrated circuits
- oxide film
- immersed
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000004065 semiconductor Substances 0.000 title claims 2
- 238000000034 method Methods 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음.
Description
제2도 내지 제4도는 본 발명에 의하여 제조되는 과정을 순서대로 나타낸 구조단면도.
Claims (3)
- 바이폴라(Bipolar)집적회로에 있어서, 산화막(4)을 몰입하고, 질화막(10)을 마스크로 하여 다결정(11)을 산화시켜 저항(20)부분을 트랜지스터와 격리시킨 반도체집적회로의 구조.
- 바이폴라 공정에 있어서, 산화막(4)을 몰입형으로 하여 다결정실리콘을 저항으로 사용하고, 다결정 실리콘을 산화시킨 산화막을 이용하여 저항과 트랜지스터 사이을 격리시키고, 질화막(10)을 사용하여 베이스 접합의 깊이를 조절할 수 있도록 함을 특징으로 하는 반도체 집적회로의 제조방법.
- ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019850005078A KR930000714B1 (ko) | 1985-07-16 | 1985-07-16 | 반도체 집적회로의 구조 및 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019850005078A KR930000714B1 (ko) | 1985-07-16 | 1985-07-16 | 반도체 집적회로의 구조 및 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR870001658A true KR870001658A (ko) | 1987-03-17 |
| KR930000714B1 KR930000714B1 (ko) | 1993-01-30 |
Family
ID=19241861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019850005078A KR930000714B1 (ko) | 1985-07-16 | 1985-07-16 | 반도체 집적회로의 구조 및 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR930000714B1 (ko) |
-
1985
- 1985-07-16 KR KR1019850005078A patent/KR930000714B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR930000714B1 (ko) | 1993-01-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20041220 Year of fee payment: 13 |
|
| EXPY | Expiration of term |