KR870000707A - 반도체 기억장치 - Google Patents

반도체 기억장치

Info

Publication number
KR870000707A
KR870000707A KR1019860004712A KR860004712A KR870000707A KR 870000707 A KR870000707 A KR 870000707A KR 1019860004712 A KR1019860004712 A KR 1019860004712A KR 860004712 A KR860004712 A KR 860004712A KR 870000707 A KR870000707 A KR 870000707A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR1019860004712A
Other languages
English (en)
Other versions
KR900004326B1 (ko
Inventor
야스노리 다나까
히데오 하시모도
Original Assignee
가부시기가이샤 도시바
도시바 마이콘 엔지니어링 가부시기가이샤
토스백 컴퓨터 시스템 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 도시바, 도시바 마이콘 엔지니어링 가부시기가이샤, 토스백 컴퓨터 시스템 가부시기가이샤 filed Critical 가부시기가이샤 도시바
Publication of KR870000707A publication Critical patent/KR870000707A/ko
Application granted granted Critical
Publication of KR900004326B1 publication Critical patent/KR900004326B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B62—LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
    • B62L—BRAKES SPECIALLY ADAPTED FOR CYCLES
    • B62L3/00—Brake-actuating mechanisms; Arrangements thereof
    • B62L3/04—Brake-actuating mechanisms; Arrangements thereof for control by a foot lever
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1019860004712A 1985-06-18 1986-06-13 반도체 기억장치 KR900004326B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP130867 1984-06-27
JP60130867A JPH0783062B2 (ja) 1985-06-18 1985-06-18 マスタ−スライス型半導体装置

Publications (2)

Publication Number Publication Date
KR870000707A true KR870000707A (ko) 1987-02-20
KR900004326B1 KR900004326B1 (ko) 1990-06-22

Family

ID=15044552

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860004712A KR900004326B1 (ko) 1985-06-18 1986-06-13 반도체 기억장치

Country Status (5)

Country Link
US (1) US4873670A (ko)
EP (1) EP0206229B1 (ko)
JP (1) JPH0783062B2 (ko)
KR (1) KR900004326B1 (ko)
DE (1) DE3686603T2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4899308A (en) * 1986-12-11 1990-02-06 Fairchild Semiconductor Corporation High density ROM in a CMOS gate array
JPH03179780A (ja) * 1989-12-07 1991-08-05 Fujitsu Ltd 半導体装置
US5420818A (en) * 1994-01-03 1995-05-30 Texas Instruments Incorporated Static read only memory (ROM)
JPH10134566A (ja) * 1996-10-31 1998-05-22 Mitsubishi Electric Corp 記憶機能を有する半導体装置及びそのデータ読み出し方法
DE102004056459B4 (de) 2004-11-23 2007-01-18 Infineon Technologies Ag ROM-Speicherzelle mit definierten Bitleitungsspannungen

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648071A (en) * 1970-02-04 1972-03-07 Nat Semiconductor Corp High-speed mos sense amplifier
JPS5947464B2 (ja) * 1974-09-11 1984-11-19 株式会社日立製作所 半導体装置
JPS5736857A (en) * 1980-08-15 1982-02-27 Hitachi Ltd Mos semiconductor device
JPS5878467A (ja) * 1981-11-05 1983-05-12 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
US4434381A (en) * 1981-12-07 1984-02-28 Rca Corporation Sense amplifiers
JPS592291A (ja) * 1982-06-28 1984-01-07 Fujitsu Ltd プログラマブル・リ−ドオンリ・メモリ装置
US4575823A (en) * 1982-08-17 1986-03-11 Westinghouse Electric Corp. Electrically alterable non-volatile memory
US4541077A (en) * 1982-11-12 1985-09-10 National Semiconductor Corporation Self compensating ROM circuit
JPS59180324A (ja) * 1983-03-31 1984-10-13 Fujitsu Ltd 半導体記憶装置
JPS60147998A (ja) * 1984-01-11 1985-08-05 Toshiba Corp 半導体記憶装置
FR2563651B1 (fr) * 1984-04-27 1986-06-27 Thomson Csf Mat Tel Memoire morte realisee en circuit integre prediffuse
JPS61289598A (ja) * 1985-06-17 1986-12-19 Toshiba Corp 読出専用半導体記憶装置
JPH0766659B2 (ja) * 1986-01-30 1995-07-19 三菱電機株式会社 半導体記憶装置
US4658380A (en) * 1986-02-28 1987-04-14 Ncr Corporation CMOS memory margining control circuit for a nonvolatile memory

Also Published As

Publication number Publication date
US4873670A (en) 1989-10-10
DE3686603D1 (de) 1992-10-08
EP0206229B1 (en) 1992-09-02
JPH0783062B2 (ja) 1995-09-06
KR900004326B1 (ko) 1990-06-22
JPS61289646A (ja) 1986-12-19
DE3686603T2 (de) 1993-03-18
EP0206229A3 (en) 1988-04-06
EP0206229A2 (en) 1986-12-30

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Legal Events

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A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050531

Year of fee payment: 16

EXPY Expiration of term