KR860009100A - 부식액 조성물 및 그 제조방법 - Google Patents

부식액 조성물 및 그 제조방법 Download PDF

Info

Publication number
KR860009100A
KR860009100A KR1019860003650A KR860003650A KR860009100A KR 860009100 A KR860009100 A KR 860009100A KR 1019860003650 A KR1019860003650 A KR 1019860003650A KR 860003650 A KR860003650 A KR 860003650A KR 860009100 A KR860009100 A KR 860009100A
Authority
KR
South Korea
Prior art keywords
surfactant
group
ppm
fluorinated
composition
Prior art date
Application number
KR1019860003650A
Other languages
English (en)
Other versions
KR900003980B1 (ko
Inventor
제임스 홉킨스 로날드
고우어 토마스 이반
죤 키에타 헤롤드
죤 키에타 해롤드
Original Assignee
알라이드 코오포레이션
로이 에이취. 맷신길
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 알라이드 코오포레이션, 로이 에이취. 맷신길 filed Critical 알라이드 코오포레이션
Publication of KR860009100A publication Critical patent/KR860009100A/ko
Application granted granted Critical
Publication of KR900003980B1 publication Critical patent/KR900003980B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
  • Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

내용 없음

Description

부식액 조성물 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

13.5-45wt％의 플루오르화 암모늄(NH4F), 25-20,000ppm의 다음 일반식(Ⅰ)을 갖는 플루오로화시클로알칼술폰산염 및/또는 플루오르화 시클로알켄술폰산염 계면활성제 및 나머지의 물로 구성된 부식액 조성물.
식중, X는 F,H,CI,OH,SO3A(A는 추후 설명) 및 R(추후 설명)로 구성된 그룹으로부터 선택된 라디칼로서 그중 하나는 SO3A 이고, Y는 F,H,OH 및 R로 구성된 그룹으로부터 선택된 라디칼이거나 또는 생략되어 탄소가 이중 결합을 갖도록하는 것이며, n은 6 이하의 정수이다.
한편, R은 플루오르알킬기 또는 알킬기(C1-C4)이고, A는 NH4 +, H+, Na+, K+, Li+, R+및 NH4 +(여기서 R은 탄소수1-4개의 알킬기임)로 구성된 그룹으로부터 선택된 양이온임.
1-11wt％의 플루오르화수소(HF), 13.5-45wt％의 플루오르화 암모늄(NH4F), 25-20,000ppm의 상기 1항에서 언급한 계면활성제 및 나머지의 물로 구성된 부식액조성물.
제1항에 있어서, 일반식(Ⅰ)의 계면 활성제에서의 n이 2-4의 값을 갖는 것인, 부식액조성물.
제1항에 있어서, 일반식(Ⅰ)의 계면 활성제가 금속이온 함량이 낮은 암모늄염인, 부식액조성물.
제1항에 있어서, 일반식(Ⅰ)의 계면 활성제가 플루오르화 시클로알칸술폰산이거나 플루오르화 시클로알켄술폰산인, 부식액조성물.
제1항에 있어서, 일반식(Ⅰ)의 계면활성제가 고체로서 또는 수성극성 용매와의 혼합물로서 부가되며 그 총 함량은 200-5,000ppm인, 부식액조성물.
1-11wt％의 플루오르화수소(HF), 13.5-45wt％의 플루오르화 암모늄(NH4F), 25-20,000ppm의 상기 제1항에서 언급한 계면활성제, 200-1,000pp의 부식억제용 희석제 및 나머지의 물로 구성된, 부식액조성물.
상기 제2항에서 언급한 조성물 및 50wt％ 이하의, 초산과 에틸렌 글리콜 및 저급알코올(C1-C3)으로 구성된 그룹으로부터 선택된 부식억제용 희석제로 구성된 부식액조성물.
49wt％ 농도의 플루오르화수소(HF) 수용액을 15-40wt％ 플루오르화 암모늄(NH4F) 수용액과 혼합하고 200-5,000ppm의 제1항에서 언급한 플루오화 고리형 계면활성제를 부가함을 특징으로 하는, 부식액조성물의 제조방법.
제9항에 있어서, 플루오르화 암모늄 수용액의 농도가 30％ NH4F임을 특징으로 하는, 부식액 조성물의 제조방법.
※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860003650A 1985-05-13 1986-05-10 부식액 조성물 및 그 제조방법 KR900003980B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/733,568 US4620934A (en) 1984-04-26 1985-05-13 Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4
US733,568 1985-05-13

Publications (2)

Publication Number Publication Date
KR860009100A true KR860009100A (ko) 1986-12-20
KR900003980B1 KR900003980B1 (ko) 1990-06-07

Family

ID=24948178

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860003650A KR900003980B1 (ko) 1985-05-13 1986-05-10 부식액 조성물 및 그 제조방법

Country Status (7)

Country Link
US (1) US4620934A (ko)
EP (1) EP0201808B1 (ko)
JP (1) JPH0694596B2 (ko)
KR (1) KR900003980B1 (ko)
CN (1) CN1012071B (ko)
CA (1) CA1276530C (ko)
DE (1) DE3689962T2 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4863563A (en) * 1987-01-27 1989-09-05 Olin Corporation Etching solutions containing ammonium fluoride and a nonionic alkyl amine glycidol adduct and method of etching
US4761244A (en) * 1987-01-27 1988-08-02 Olin Corporation Etching solutions containing ammonium fluoride and an alkyl polyaccharide surfactant
US4761245A (en) * 1987-01-27 1988-08-02 Olin Corporation Etching solutions containing ammonium fluoride and an alkylphenol polyglycidol ether surfactant
EP0416012B1 (en) * 1988-05-16 1993-11-24 Olin Corporation Etching solutions containing anionic sulfate esters of alkylphenol polyglycidol ethers
DE69418458T2 (de) * 1993-02-04 2000-01-27 Daikin Ind Ltd Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaften
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
GB9621949D0 (en) * 1996-10-22 1996-12-18 Molloy Malachy J Floor and tile anti-slip treatment
DE19805525C2 (de) * 1998-02-11 2002-06-13 Sez Semiconduct Equip Zubehoer Verfahren zum Naßätzen von Halbleiterscheiben zum Erzeugen eines definierten Randbereichs durch Unterätzen
US5939336A (en) * 1998-08-21 1999-08-17 Micron Technology, Inc. Aqueous solutions of ammonium fluoride in propylene glycol and their use in the removal of etch residues from silicon substrates
US6670281B2 (en) * 1998-12-30 2003-12-30 Honeywell International Inc. HF etching and oxide scale removal
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
AU2001274038A1 (en) * 2000-05-25 2001-12-03 Max Braun Etching process
ES2195770B1 (es) * 2002-02-21 2005-02-16 Jon Imanol Murua Fuertes Compuesto antideslizante.
US6740571B2 (en) * 2002-07-25 2004-05-25 Mosel Vitelic, Inc. Method of etching a dielectric material in the presence of polysilicon
US6890452B2 (en) * 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
JP4816250B2 (ja) * 2006-05-25 2011-11-16 三菱瓦斯化学株式会社 エッチング液組成物及びエッチング方法
US7779744B2 (en) * 2006-09-20 2010-08-24 Gm Global Technology Operations, Inc. Vehicular hydraulic system with priority valve
KR100891255B1 (ko) * 2007-01-05 2009-04-01 주식회사 하이닉스반도체 커패시터의 리닝 방지용 식각액 조성물 및 이를 이용한커패시터 제조 방법
KR20090109198A (ko) * 2008-04-15 2009-10-20 주식회사 동진쎄미켐 액정디스플레이 장치용 유리기판의 세정 및 식각 조성물 및이를 이용한 유리기판의 식각 방법
CN101840964B (zh) * 2009-03-18 2012-04-25 中国科学院半导体研究所 低阻p-GaN欧姆接触电极制备方法
CN108384548A (zh) * 2018-02-24 2018-08-10 苏州晶瑞化学股份有限公司 一种非金属氧化物膜用缓冲蚀刻液
CN115231864B (zh) * 2022-08-10 2023-06-20 安徽理工大学 一种利用二氧化硅基体蚀刻废液制备的碱激发混凝土及其应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1228083A (ko) * 1968-06-10 1971-04-15
US3650960A (en) * 1969-05-06 1972-03-21 Allied Chem Etching solutions
US4040897A (en) * 1975-05-05 1977-08-09 Signetics Corporation Etchants for glass films on metal substrates
US4055458A (en) * 1975-08-07 1977-10-25 Bayer Aktiengesellschaft Etching glass with HF and fluorine-containing surfactant
JPS5616129A (en) * 1979-07-18 1981-02-16 Hitachi Ltd Pattern forming method
JPS5639027A (en) * 1979-09-08 1981-04-14 Mitsui Petrochem Ind Ltd Cyclopropenium salt and its preparation
JPS59974A (ja) * 1982-06-25 1984-01-06 Fujitsu Ltd 半導体受光装置の製造方法
JPS6039176A (ja) * 1983-08-10 1985-02-28 Daikin Ind Ltd エッチング剤組成物
US4517106A (en) * 1984-04-26 1985-05-14 Allied Corporation Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions

Also Published As

Publication number Publication date
DE3689962D1 (de) 1994-08-18
JPH0694596B2 (ja) 1994-11-24
CN1012071B (zh) 1991-03-20
DE3689962T2 (de) 1995-01-05
EP0201808A2 (en) 1986-11-20
EP0201808A3 (en) 1988-03-23
KR900003980B1 (ko) 1990-06-07
US4620934A (en) 1986-11-04
CN86103055A (zh) 1986-11-26
EP0201808B1 (en) 1994-07-13
JPS61266581A (ja) 1986-11-26
CA1276530C (en) 1990-11-20

Similar Documents

Publication Publication Date Title
KR860009100A (ko) 부식액 조성물 및 그 제조방법
US4065409A (en) Hard surface detergent composition
KR900000739B1 (ko) 부식제 조성물
EP0667392A2 (en) Bleach compositions
US4229313A (en) Alkali metal hypochlorite bleaching and cleaning compositions thickened with branch chain amine oxides
KR880004557A (ko) 마이크로 프로세싱용 표면처리 조성물
ES8800335A1 (es) Un metodo para preparar una composicion detergente liquida estabilizada con una sal de aluminio de un acido carboxilico olifatico superior.
US4092272A (en) Liquid detergent composition
US4166048A (en) High foaming detergent composition having low skin irritation properties
KR960700332A (ko) 손 설겆이 세정제(dishwashing detergent)
KR920703007A (ko) 세정제 조성물
KR870010864A (ko) O/w 형 에멀젼 조성물
KR950002588A (ko) 과산화수소 조성물
KR890000649A (ko) 알칼리 세정제용 첨가제 및 이를 함유하는 조성물
KR840007249A (ko) 과산화수소, 불화수소산 및 금속이온을 함유하는 수용액을 안정화시키는 방법
KR890004765A (ko) 화장품 제제에서 사용하기 위한 증점된 수성 계면 활성제 용액
ES8306174A1 (es) "un metodo de fabricacion de una composicion detergente liquida".
KR950703048A (ko) 일차 알킬 술페이트 및 비이온계 계면활성제를 함유하는 액상 세정 조성물(liquid cleaning compositions comprising primary alkyl sulphate and non-ionic surfactants)
KR930003244B1 (ko) 진한 세척용 수성 조성물
US4604233A (en) Thickened aqueous hydrochloric acid composition for descaling, or treatment of subterranean formations
US3440171A (en) Surface active compositions
GB1449525A (en) Method of stabilizing acid aqueous solutions of hydrogen peroxide
US3074836A (en) Baths for one-stage quick etches
EP0148517B1 (en) Use of olefin sulphonate compositions in enhanced oil recovery processes
KR910003152A (ko) 방식제조성물

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20010409

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee