DE3689962D1 - Lösliche Zusätze für Oxid-Ätzlösungen aus NH4F/HF mit oberflächenaktivem fluoriertem Cykloalkansulfonat. - Google Patents

Lösliche Zusätze für Oxid-Ätzlösungen aus NH4F/HF mit oberflächenaktivem fluoriertem Cykloalkansulfonat.

Info

Publication number
DE3689962D1
DE3689962D1 DE3689962T DE3689962T DE3689962D1 DE 3689962 D1 DE3689962 D1 DE 3689962D1 DE 3689962 T DE3689962 T DE 3689962T DE 3689962 T DE3689962 T DE 3689962T DE 3689962 D1 DE3689962 D1 DE 3689962D1
Authority
DE
Germany
Prior art keywords
nh4f
sulfonate
etching solutions
oxide etching
soluble additives
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3689962T
Other languages
English (en)
Other versions
DE3689962T2 (de
Inventor
Ronald James Hopkins
Evan Gower Thomas
Harold John Kieta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hmc Patents Holding Co Inc
Original Assignee
Hmc Patents Holding Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hmc Patents Holding Co Inc filed Critical Hmc Patents Holding Co Inc
Application granted granted Critical
Publication of DE3689962D1 publication Critical patent/DE3689962D1/de
Publication of DE3689962T2 publication Critical patent/DE3689962T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
  • Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE3689962T 1985-05-13 1986-04-30 Lösliche Zusätze für Oxid-Ätzlösungen aus NH4F/HF mit oberflächenaktivem fluoriertem Cykloalkansulfonat. Expired - Fee Related DE3689962T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/733,568 US4620934A (en) 1984-04-26 1985-05-13 Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4

Publications (2)

Publication Number Publication Date
DE3689962D1 true DE3689962D1 (de) 1994-08-18
DE3689962T2 DE3689962T2 (de) 1995-01-05

Family

ID=24948178

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3689962T Expired - Fee Related DE3689962T2 (de) 1985-05-13 1986-04-30 Lösliche Zusätze für Oxid-Ätzlösungen aus NH4F/HF mit oberflächenaktivem fluoriertem Cykloalkansulfonat.

Country Status (7)

Country Link
US (1) US4620934A (de)
EP (1) EP0201808B1 (de)
JP (1) JPH0694596B2 (de)
KR (1) KR900003980B1 (de)
CN (1) CN1012071B (de)
CA (1) CA1276530C (de)
DE (1) DE3689962T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115231864A (zh) * 2022-08-10 2022-10-25 安徽理工大学 一种利用二氧化硅基体蚀刻废液制备的碱激发混凝土及其应用

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761244A (en) * 1987-01-27 1988-08-02 Olin Corporation Etching solutions containing ammonium fluoride and an alkyl polyaccharide surfactant
US4863563A (en) * 1987-01-27 1989-09-05 Olin Corporation Etching solutions containing ammonium fluoride and a nonionic alkyl amine glycidol adduct and method of etching
US4761245A (en) * 1987-01-27 1988-08-02 Olin Corporation Etching solutions containing ammonium fluoride and an alkylphenol polyglycidol ether surfactant
AU3732089A (en) * 1988-05-16 1989-12-12 Olin Corporation Etching solutions containing anionic sulfate esters of alkylphenol polyglycidol ethers
WO1994018696A1 (en) * 1993-02-04 1994-08-18 Daikin Industries, Ltd. Wet-etching composition for semiconductors excellent in wettability
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
GB9621949D0 (en) * 1996-10-22 1996-12-18 Molloy Malachy J Floor and tile anti-slip treatment
DE19805525C2 (de) * 1998-02-11 2002-06-13 Sez Semiconduct Equip Zubehoer Verfahren zum Naßätzen von Halbleiterscheiben zum Erzeugen eines definierten Randbereichs durch Unterätzen
US5939336A (en) * 1998-08-21 1999-08-17 Micron Technology, Inc. Aqueous solutions of ammonium fluoride in propylene glycol and their use in the removal of etch residues from silicon substrates
US6670281B2 (en) * 1998-12-30 2003-12-30 Honeywell International Inc. HF etching and oxide scale removal
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
WO2001090014A1 (de) * 2000-05-25 2001-11-29 Max Braun Ätzverfahren
ES2195770B1 (es) * 2002-02-21 2005-02-16 Jon Imanol Murua Fuertes Compuesto antideslizante.
US6740571B2 (en) * 2002-07-25 2004-05-25 Mosel Vitelic, Inc. Method of etching a dielectric material in the presence of polysilicon
US6890452B2 (en) * 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
JP4816250B2 (ja) * 2006-05-25 2011-11-16 三菱瓦斯化学株式会社 エッチング液組成物及びエッチング方法
US7779744B2 (en) * 2006-09-20 2010-08-24 Gm Global Technology Operations, Inc. Vehicular hydraulic system with priority valve
KR100891255B1 (ko) * 2007-01-05 2009-04-01 주식회사 하이닉스반도체 커패시터의 리닝 방지용 식각액 조성물 및 이를 이용한커패시터 제조 방법
KR20090109198A (ko) * 2008-04-15 2009-10-20 주식회사 동진쎄미켐 액정디스플레이 장치용 유리기판의 세정 및 식각 조성물 및이를 이용한 유리기판의 식각 방법
CN101840964B (zh) * 2009-03-18 2012-04-25 中国科学院半导体研究所 低阻p-GaN欧姆接触电极制备方法
CN108384548A (zh) * 2018-02-24 2018-08-10 苏州晶瑞化学股份有限公司 一种非金属氧化物膜用缓冲蚀刻液

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1228083A (de) * 1968-06-10 1971-04-15
US3650960A (en) * 1969-05-06 1972-03-21 Allied Chem Etching solutions
US4040897A (en) * 1975-05-05 1977-08-09 Signetics Corporation Etchants for glass films on metal substrates
US4055458A (en) * 1975-08-07 1977-10-25 Bayer Aktiengesellschaft Etching glass with HF and fluorine-containing surfactant
JPS5616129A (en) * 1979-07-18 1981-02-16 Hitachi Ltd Pattern forming method
JPS5639027A (en) * 1979-09-08 1981-04-14 Mitsui Petrochem Ind Ltd Cyclopropenium salt and its preparation
JPS59974A (ja) * 1982-06-25 1984-01-06 Fujitsu Ltd 半導体受光装置の製造方法
JPS6039176A (ja) * 1983-08-10 1985-02-28 Daikin Ind Ltd エッチング剤組成物
US4517106A (en) * 1984-04-26 1985-05-14 Allied Corporation Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115231864A (zh) * 2022-08-10 2022-10-25 安徽理工大学 一种利用二氧化硅基体蚀刻废液制备的碱激发混凝土及其应用

Also Published As

Publication number Publication date
DE3689962T2 (de) 1995-01-05
KR900003980B1 (ko) 1990-06-07
JPS61266581A (ja) 1986-11-26
JPH0694596B2 (ja) 1994-11-24
CN1012071B (zh) 1991-03-20
EP0201808A3 (en) 1988-03-23
EP0201808A2 (de) 1986-11-20
KR860009100A (ko) 1986-12-20
US4620934A (en) 1986-11-04
CN86103055A (zh) 1986-11-26
CA1276530C (en) 1990-11-20
EP0201808B1 (de) 1994-07-13

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8339 Ceased/non-payment of the annual fee