DE3689962D1 - Lösliche Zusätze für Oxid-Ätzlösungen aus NH4F/HF mit oberflächenaktivem fluoriertem Cykloalkansulfonat. - Google Patents
Lösliche Zusätze für Oxid-Ätzlösungen aus NH4F/HF mit oberflächenaktivem fluoriertem Cykloalkansulfonat.Info
- Publication number
- DE3689962D1 DE3689962D1 DE3689962T DE3689962T DE3689962D1 DE 3689962 D1 DE3689962 D1 DE 3689962D1 DE 3689962 T DE3689962 T DE 3689962T DE 3689962 T DE3689962 T DE 3689962T DE 3689962 D1 DE3689962 D1 DE 3689962D1
- Authority
- DE
- Germany
- Prior art keywords
- nh4f
- sulfonate
- etching solutions
- oxide etching
- soluble additives
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000654 additive Substances 0.000 title 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 title 1
- -1 cycloalkane sulfonate Chemical class 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Structural Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Detergent Compositions (AREA)
- Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/733,568 US4620934A (en) | 1984-04-26 | 1985-05-13 | Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3689962D1 true DE3689962D1 (de) | 1994-08-18 |
DE3689962T2 DE3689962T2 (de) | 1995-01-05 |
Family
ID=24948178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3689962T Expired - Fee Related DE3689962T2 (de) | 1985-05-13 | 1986-04-30 | Lösliche Zusätze für Oxid-Ätzlösungen aus NH4F/HF mit oberflächenaktivem fluoriertem Cykloalkansulfonat. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4620934A (de) |
EP (1) | EP0201808B1 (de) |
JP (1) | JPH0694596B2 (de) |
KR (1) | KR900003980B1 (de) |
CN (1) | CN1012071B (de) |
CA (1) | CA1276530C (de) |
DE (1) | DE3689962T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115231864A (zh) * | 2022-08-10 | 2022-10-25 | 安徽理工大学 | 一种利用二氧化硅基体蚀刻废液制备的碱激发混凝土及其应用 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4761244A (en) * | 1987-01-27 | 1988-08-02 | Olin Corporation | Etching solutions containing ammonium fluoride and an alkyl polyaccharide surfactant |
US4863563A (en) * | 1987-01-27 | 1989-09-05 | Olin Corporation | Etching solutions containing ammonium fluoride and a nonionic alkyl amine glycidol adduct and method of etching |
US4761245A (en) * | 1987-01-27 | 1988-08-02 | Olin Corporation | Etching solutions containing ammonium fluoride and an alkylphenol polyglycidol ether surfactant |
AU3732089A (en) * | 1988-05-16 | 1989-12-12 | Olin Corporation | Etching solutions containing anionic sulfate esters of alkylphenol polyglycidol ethers |
WO1994018696A1 (en) * | 1993-02-04 | 1994-08-18 | Daikin Industries, Ltd. | Wet-etching composition for semiconductors excellent in wettability |
US5320709A (en) * | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
GB9621949D0 (en) * | 1996-10-22 | 1996-12-18 | Molloy Malachy J | Floor and tile anti-slip treatment |
DE19805525C2 (de) * | 1998-02-11 | 2002-06-13 | Sez Semiconduct Equip Zubehoer | Verfahren zum Naßätzen von Halbleiterscheiben zum Erzeugen eines definierten Randbereichs durch Unterätzen |
US5939336A (en) * | 1998-08-21 | 1999-08-17 | Micron Technology, Inc. | Aqueous solutions of ammonium fluoride in propylene glycol and their use in the removal of etch residues from silicon substrates |
US6670281B2 (en) * | 1998-12-30 | 2003-12-30 | Honeywell International Inc. | HF etching and oxide scale removal |
US6248704B1 (en) | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
WO2001090014A1 (de) * | 2000-05-25 | 2001-11-29 | Max Braun | Ätzverfahren |
ES2195770B1 (es) * | 2002-02-21 | 2005-02-16 | Jon Imanol Murua Fuertes | Compuesto antideslizante. |
US6740571B2 (en) * | 2002-07-25 | 2004-05-25 | Mosel Vitelic, Inc. | Method of etching a dielectric material in the presence of polysilicon |
US6890452B2 (en) * | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
JP4816250B2 (ja) * | 2006-05-25 | 2011-11-16 | 三菱瓦斯化学株式会社 | エッチング液組成物及びエッチング方法 |
US7779744B2 (en) * | 2006-09-20 | 2010-08-24 | Gm Global Technology Operations, Inc. | Vehicular hydraulic system with priority valve |
KR100891255B1 (ko) * | 2007-01-05 | 2009-04-01 | 주식회사 하이닉스반도체 | 커패시터의 리닝 방지용 식각액 조성물 및 이를 이용한커패시터 제조 방법 |
KR20090109198A (ko) * | 2008-04-15 | 2009-10-20 | 주식회사 동진쎄미켐 | 액정디스플레이 장치용 유리기판의 세정 및 식각 조성물 및이를 이용한 유리기판의 식각 방법 |
CN101840964B (zh) * | 2009-03-18 | 2012-04-25 | 中国科学院半导体研究所 | 低阻p-GaN欧姆接触电极制备方法 |
CN108384548A (zh) * | 2018-02-24 | 2018-08-10 | 苏州晶瑞化学股份有限公司 | 一种非金属氧化物膜用缓冲蚀刻液 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1228083A (de) * | 1968-06-10 | 1971-04-15 | ||
US3650960A (en) * | 1969-05-06 | 1972-03-21 | Allied Chem | Etching solutions |
US4040897A (en) * | 1975-05-05 | 1977-08-09 | Signetics Corporation | Etchants for glass films on metal substrates |
US4055458A (en) * | 1975-08-07 | 1977-10-25 | Bayer Aktiengesellschaft | Etching glass with HF and fluorine-containing surfactant |
JPS5616129A (en) * | 1979-07-18 | 1981-02-16 | Hitachi Ltd | Pattern forming method |
JPS5639027A (en) * | 1979-09-08 | 1981-04-14 | Mitsui Petrochem Ind Ltd | Cyclopropenium salt and its preparation |
JPS59974A (ja) * | 1982-06-25 | 1984-01-06 | Fujitsu Ltd | 半導体受光装置の製造方法 |
JPS6039176A (ja) * | 1983-08-10 | 1985-02-28 | Daikin Ind Ltd | エッチング剤組成物 |
US4517106A (en) * | 1984-04-26 | 1985-05-14 | Allied Corporation | Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions |
-
1985
- 1985-05-13 US US06/733,568 patent/US4620934A/en not_active Expired - Lifetime
-
1986
- 1986-04-29 CN CN86103055A patent/CN1012071B/zh not_active Expired
- 1986-04-30 DE DE3689962T patent/DE3689962T2/de not_active Expired - Fee Related
- 1986-04-30 EP EP86105979A patent/EP0201808B1/de not_active Expired - Lifetime
- 1986-05-10 KR KR1019860003650A patent/KR900003980B1/ko not_active IP Right Cessation
- 1986-05-12 CA CA000508873A patent/CA1276530C/en not_active Expired - Fee Related
- 1986-05-13 JP JP61109370A patent/JPH0694596B2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115231864A (zh) * | 2022-08-10 | 2022-10-25 | 安徽理工大学 | 一种利用二氧化硅基体蚀刻废液制备的碱激发混凝土及其应用 |
Also Published As
Publication number | Publication date |
---|---|
DE3689962T2 (de) | 1995-01-05 |
KR900003980B1 (ko) | 1990-06-07 |
JPS61266581A (ja) | 1986-11-26 |
JPH0694596B2 (ja) | 1994-11-24 |
CN1012071B (zh) | 1991-03-20 |
EP0201808A3 (en) | 1988-03-23 |
EP0201808A2 (de) | 1986-11-20 |
KR860009100A (ko) | 1986-12-20 |
US4620934A (en) | 1986-11-04 |
CN86103055A (zh) | 1986-11-26 |
CA1276530C (en) | 1990-11-20 |
EP0201808B1 (de) | 1994-07-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |