KR860000073B1 - 고체촬상소자(固體撮像素子) - Google Patents

고체촬상소자(固體撮像素子) Download PDF

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Publication number
KR860000073B1
KR860000073B1 KR1019810002916A KR810002916A KR860000073B1 KR 860000073 B1 KR860000073 B1 KR 860000073B1 KR 1019810002916 A KR1019810002916 A KR 1019810002916A KR 810002916 A KR810002916 A KR 810002916A KR 860000073 B1 KR860000073 B1 KR 860000073B1
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KR
South Korea
Prior art keywords
voltage
transistor
mos transistor
image pickup
solid state
Prior art date
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Expired
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KR1019810002916A
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English (en)
Korean (ko)
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KR830006824A (ko
Inventor
도오루 바지
도시히사 쓰까다
노리오 고이께
도시유끼 아끼야마
이와오 다께모도
시게루 시마다
츄우시로오 구사노
신야 오오바
하루오 마쓰마루
Original Assignee
가부시기가이샤 히다찌 세이사꾸쇼
미다 가쓰시게
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Publication of KR830006824A publication Critical patent/KR830006824A/ko
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Publication of KR860000073B1 publication Critical patent/KR860000073B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1019810002916A 1980-08-20 1981-08-11 고체촬상소자(固體撮像素子) Expired KR860000073B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP80-1135111 1980-08-20
JP11351180A JPS5738073A (en) 1980-08-20 1980-08-20 Solid-state image sensor

Publications (2)

Publication Number Publication Date
KR830006824A KR830006824A (ko) 1983-10-06
KR860000073B1 true KR860000073B1 (ko) 1986-02-06

Family

ID=14614182

Family Applications (1)

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KR1019810002916A Expired KR860000073B1 (ko) 1980-08-20 1981-08-11 고체촬상소자(固體撮像素子)

Country Status (6)

Country Link
US (1) US4407010A (enExample)
EP (1) EP0046396B1 (enExample)
JP (1) JPS5738073A (enExample)
KR (1) KR860000073B1 (enExample)
CA (1) CA1162280A (enExample)
DE (1) DE3171574D1 (enExample)

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JPS5813079A (ja) * 1981-07-16 1983-01-25 Olympus Optical Co Ltd イメ−ジセンサ
JPS58169965A (ja) * 1982-03-31 1983-10-06 Hitachi Ltd 固体撮像装置
JPS58172057A (ja) * 1982-04-02 1983-10-08 Hitachi Ltd 光学読取装置
DE3236146A1 (de) * 1982-09-29 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor und verfahren zu seinem betrieb
DE3236073A1 (de) * 1982-09-29 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit einer anordnung zur reduzierung des ueberstrahlens
FR2536188B1 (fr) * 1982-11-17 1987-10-23 Commissariat Energie Atomique Dispositif de lecture de document point par point utilisant une matrice d'elements photodetecteurs
JPS6030282A (ja) * 1983-07-28 1985-02-15 Mitsubishi Electric Corp 固体撮像装置
JPS6043857A (ja) * 1983-08-20 1985-03-08 Mitsubishi Electric Corp 固体撮像装置とその製造方法
JPS60130975A (ja) * 1983-12-19 1985-07-12 Olympus Optical Co Ltd 超音波撮像素子
FR2582844A2 (fr) * 1984-04-17 1986-12-05 Bergher Laurent Dispositif de formation et de memorisation d'images a semi-conducteur
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same
JPS6170869A (ja) * 1984-09-14 1986-04-11 Fuji Photo Film Co Ltd 固体撮像装置および固体光センサ装置
JPS6182585A (ja) * 1984-09-29 1986-04-26 Toshiba Corp イメ−ジセンサ
US4633092A (en) * 1984-11-13 1986-12-30 Eastman Kodak Company Light sensing device
JPH0646655B2 (ja) * 1985-04-01 1994-06-15 キヤノン株式会社 固体撮像装置
DE3677645D1 (de) * 1985-07-05 1991-04-04 Mitsubishi Electric Corp Optischer signalabnehmer.
US5737016A (en) * 1985-11-15 1998-04-07 Canon Kabushiki Kaisha Solid state image pickup apparatus for reducing noise
US5771070A (en) * 1985-11-15 1998-06-23 Canon Kabushiki Kaisha Solid state image pickup apparatus removing noise from the photoelectric converted signal
US4905265A (en) * 1985-12-11 1990-02-27 General Imaging Corporation X-ray imaging system and solid state detector therefor
FR2593319B1 (fr) * 1986-01-17 1988-03-25 Thomson Csf Procede de lecture d'element photosensible constitue d'une photodiode et d'une capacite
US4737854A (en) * 1986-07-18 1988-04-12 Xerox Corporation Image sensor array with two stage transfer
US4734776A (en) * 1986-08-15 1988-03-29 General Electric Company Readout circuit for an optical sensing charge injection device facilitating an extended dynamic range
DE3856165T2 (de) * 1987-01-29 1998-08-27 Canon Kk Photovoltaischer Wandler
JP2564133B2 (ja) * 1987-04-17 1996-12-18 オリンパス光学工業株式会社 固体撮像装置
FR2626127B1 (fr) * 1988-01-15 1990-05-04 Thomson Csf Matrice photosensible a trois diodes par point, sans remise a niveau
US4843473A (en) * 1988-03-21 1989-06-27 Polaroid Corporation Charge injection device with low noise readout
US5245203A (en) * 1988-06-06 1993-09-14 Canon Kabushiki Kaisha Photoelectric converter with plural regions
FR2638286B1 (fr) * 1988-10-25 1990-12-07 Thomson Csf Dispositif photosensible du type a amplification du signal au niveau des points photosensibles
JP2976242B2 (ja) * 1989-09-23 1999-11-10 ヴィエルエスアイ ヴィジョン リミテッド 集積回路とその集積回路を用いたカメラ並びに該集積回路技術を用いて作製されたイメージセンサへの副次的な入射光線を検出する方法
US5115293A (en) * 1989-12-11 1992-05-19 Fuji Photo Film Co., Ltd. Solid-state imaging device
US5153420A (en) * 1990-11-28 1992-10-06 Xerox Corporation Timing independent pixel-scale light sensing apparatus
US5289286A (en) * 1991-07-18 1994-02-22 Minolta Camera Kabushiki Kaisha Solid state sensor having logarithmic photovoltaic response, with pixel uniformity correction and white balance circuitry therefor
US5596200A (en) * 1992-10-14 1997-01-21 Primex Low dose mammography system
US5336879A (en) 1993-05-28 1994-08-09 David Sarnoff Research Center, Inc. Pixel array having image forming pixel elements integral with peripheral circuit elements
US5471515A (en) * 1994-01-28 1995-11-28 California Institute Of Technology Active pixel sensor with intra-pixel charge transfer
US6486503B1 (en) * 1994-01-28 2002-11-26 California Institute Of Technology Active pixel sensor array with electronic shuttering
JP2953297B2 (ja) * 1994-03-30 1999-09-27 日本電気株式会社 受光素子およびその駆動方法
KR100264931B1 (ko) * 1994-05-19 2000-09-01 쥴리 오. 페트리니 활성 픽셀을 가진 cmos 촬상 어레이
US5563429A (en) * 1994-06-14 1996-10-08 Nikon Corp. Solid state imaging device
US5708263A (en) * 1995-12-27 1998-01-13 International Business Machines Corporation Photodetector array
US5923794A (en) * 1996-02-06 1999-07-13 Polaroid Corporation Current-mediated active-pixel image sensing device with current reset
US5818052A (en) * 1996-04-18 1998-10-06 Loral Fairchild Corp. Low light level solid state image sensor
US5831258A (en) * 1996-08-20 1998-11-03 Xerox Corporation Pixel circuit with integrated amplifer
DE69824381T2 (de) * 1997-12-31 2005-06-16 Texas Instruments Inc., Dallas Matrixsensoren
US6697108B1 (en) 1997-12-31 2004-02-24 Texas Instruments Incorporated Fast frame readout architecture for array sensors with integrated correlated double sampling system
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US6252215B1 (en) 1998-04-28 2001-06-26 Xerox Corporation Hybrid sensor pixel architecture with gate line and drive line synchronization
US6051827A (en) * 1998-04-28 2000-04-18 Xerox Corporation Hybrid sensor pixel architecture with threshold response
US6005238A (en) * 1998-04-28 1999-12-21 Xerox Corporation Hybrid sensor pixel architecture with linearization circuit
US6140668A (en) * 1998-04-28 2000-10-31 Xerox Corporation Silicon structures having an absorption layer
US6504175B1 (en) 1998-04-28 2003-01-07 Xerox Corporation Hybrid polycrystalline and amorphous silicon structures on a shared substrate
US6031248A (en) * 1998-04-28 2000-02-29 Xerox Corporation Hybrid sensor pixel architecture
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JP6132213B2 (ja) * 2012-08-09 2017-05-24 パナソニックＩｐマネジメント株式会社 固体撮像装置
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Also Published As

Publication number Publication date
US4407010A (en) 1983-09-27
EP0046396A1 (en) 1982-02-24
KR830006824A (ko) 1983-10-06
EP0046396B1 (en) 1985-07-31
JPS5738073A (en) 1982-03-02
JPH0245395B2 (enExample) 1990-10-09
DE3171574D1 (en) 1985-09-05
CA1162280A (en) 1984-02-14

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