KR830002116B1 - 이득 제어증폭기 - Google Patents

이득 제어증폭기 Download PDF

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Publication number
KR830002116B1
KR830002116B1 KR1019800001099A KR800001099A KR830002116B1 KR 830002116 B1 KR830002116 B1 KR 830002116B1 KR 1019800001099 A KR1019800001099 A KR 1019800001099A KR 800001099 A KR800001099 A KR 800001099A KR 830002116 B1 KR830002116 B1 KR 830002116B1
Authority
KR
South Korea
Prior art keywords
transistor
amplifier
pin diode
signal
emitter
Prior art date
Application number
KR1019800001099A
Other languages
English (en)
Korean (ko)
Other versions
KR830002454A (ko
Inventor
하포드 잭루돌프
Original Assignee
알. 씨. 에이 코퍼레이션
에드워드 제이. 노오턴
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 알. 씨. 에이 코퍼레이션, 에드워드 제이. 노오턴 filed Critical 알. 씨. 에이 코퍼레이션
Publication of KR830002454A publication Critical patent/KR830002454A/ko
Application granted granted Critical
Publication of KR830002116B1 publication Critical patent/KR830002116B1/ko

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/02Manually-operated control
    • H03G3/04Manually-operated control in untuned amplifiers
    • H03G3/10Manually-operated control in untuned amplifiers having semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/0052Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using diodes
    • H03G1/0058PIN-diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3052Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H03G3/3057Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver using at least one diode as controlling device

Landscapes

  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Television Receiver Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Attenuators (AREA)
KR1019800001099A 1979-03-16 1980-03-15 이득 제어증폭기 KR830002116B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US?021324? 1979-03-16
US021324 1979-03-16
US06/021,324 US4275362A (en) 1979-03-16 1979-03-16 Gain controlled amplifier using a pin diode

Publications (2)

Publication Number Publication Date
KR830002454A KR830002454A (ko) 1983-05-28
KR830002116B1 true KR830002116B1 (ko) 1983-10-12

Family

ID=21803567

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019800001099A KR830002116B1 (ko) 1979-03-16 1980-03-15 이득 제어증폭기

Country Status (20)

Country Link
US (1) US4275362A (ja)
JP (1) JPS55130157A (ja)
KR (1) KR830002116B1 (ja)
AT (1) AT381420B (ja)
AU (1) AU539387B2 (ja)
BE (1) BE882248A (ja)
CA (1) CA1145421A (ja)
DD (1) DD149742A5 (ja)
DE (1) DE3009905C2 (ja)
DK (1) DK113480A (ja)
ES (1) ES8103521A1 (ja)
FI (1) FI75953C (ja)
FR (1) FR2451663B1 (ja)
GB (1) GB2044565B (ja)
IT (1) IT1129644B (ja)
NL (1) NL8001543A (ja)
NZ (1) NZ193128A (ja)
PL (1) PL128485B1 (ja)
PT (1) PT70923A (ja)
SE (1) SE451286B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100886841B1 (ko) * 2001-04-06 2009-03-05 엔엑스피 비 브이 가변 이득 증폭기, 송신기 및 송신기를 동적 바이어싱하는방법

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3115683C2 (de) * 1981-04-18 1983-07-28 Deutsche Thomson-Brandt Gmbh, 7730 Villingen-Schwenningen Schaltungsanordnung zur verzögerten, automatischen Verstärkungsregelung
US4439741A (en) * 1982-06-28 1984-03-27 Motorola, Inc. Stabilized high efficiency radio frequency amplifier
US4464635A (en) * 1982-11-18 1984-08-07 Zenith Electronics Corporation Non-reactive limiter
DE3448414C3 (de) * 1983-02-23 2003-07-17 Canon Kk Vibrationswellenantriebseinrichtung
JPS59195823U (ja) * 1983-06-10 1984-12-26 アルプス電気株式会社 利得制御増幅器
US4677392A (en) * 1985-12-16 1987-06-30 Hughes Aircraft Company Cascaded internal impedance dependent amplifier with accurate variable gain control
JPH02113573U (ja) * 1989-02-28 1990-09-11
JPH02113574U (ja) * 1989-02-28 1990-09-11
JPH02113575U (ja) * 1989-02-28 1990-09-11
US5374899A (en) * 1993-11-10 1994-12-20 Itt Corporation Self biased power amplifier employing FETs
JP3335079B2 (ja) * 1996-07-01 2002-10-15 シャープ株式会社 Agc回路
EP0908007A2 (en) * 1997-03-26 1999-04-14 Koninklijke Philips Electronics N.V. Radio receiver and controllable amplifier circuit
US5969561A (en) * 1998-03-05 1999-10-19 Diablo Research Company, Llc Integrated circuit having a variable RF resistor
GB9906047D0 (en) * 1999-03-17 1999-05-12 Secr Defence Improvements in electromagnetic wave receiver front ends
JP4048648B2 (ja) * 1999-05-12 2008-02-20 ソニー株式会社 高周波増幅回路および受信機
US6271727B1 (en) 1999-08-06 2001-08-07 Rf Micro Devices, Inc. High isolation RF power amplifier with self-bias attenuator
US6452452B1 (en) 2000-07-10 2002-09-17 Intersil Americas Inc. Negative feedback gain control for common electrode transistor
JP3854840B2 (ja) * 2000-11-27 2006-12-06 シャープ株式会社 電力増幅回路およびそれを用いた通信装置
JP2002261542A (ja) * 2000-12-27 2002-09-13 Murata Mfg Co Ltd 発振器及びそれを用いた通信機
US6535068B1 (en) * 2001-02-17 2003-03-18 Microtune (Texas), L.P. System and method for temperature compensated IF amplifier
US6876635B2 (en) * 2001-11-05 2005-04-05 Motorola, Inc. Current reduction by receiver linearity adjustment in a communication device
US20040222842A1 (en) * 2002-11-13 2004-11-11 Owens Ronnie Edward Systems and methods for generating a reference voltage
JP2008529392A (ja) * 2005-01-31 2008-07-31 エヌエックスピー ビー ヴィ 利得制御可能な入力段を有する受信装置
JP4077831B2 (ja) * 2005-05-11 2008-04-23 松下電器産業株式会社 高周波増幅器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL156008B (nl) * 1970-06-06 1978-02-15 Philips Nv Ingangsschakeling van een televisie-afstemeenheid.
US3309617A (en) * 1964-05-04 1967-03-14 Philco Ford Corp Controllable gain transistor amplifier utilizing current-variable impedance in emitter circuit for providing controllable signal degeneration
US3374404A (en) * 1964-09-18 1968-03-19 Texas Instruments Inc Surface-oriented semiconductor diode
US3396317A (en) * 1965-11-30 1968-08-06 Texas Instruments Inc Surface-oriented high frequency diode
US3348154A (en) * 1965-12-14 1967-10-17 Scott Inc H H Signal mixing and conversion apparatus employing field effect transistor with squarelaw operation
US3518585A (en) * 1966-12-30 1970-06-30 Texas Instruments Inc Voltage controlled a.c. signal attenuator
US3536934A (en) * 1967-10-25 1970-10-27 Gen Electric Wideband automatic gain control circuit
US3538448A (en) * 1968-01-17 1970-11-03 Rca Corp Gain controlled amplifier
ES372211A1 (es) * 1968-10-11 1972-02-16 Rca Corp Un amplificador de banda ancha.
US3624561A (en) * 1970-02-24 1971-11-30 Ben H Tongue Broadband aperiodic attenuator apparatus
DE2108497A1 (de) * 1971-02-23 1972-09-07 Sel Verstärkungsregelung, insbesondere zur Farbsattigungseinstellung eines SECAM Empfängers
DE2126136C3 (de) * 1971-05-26 1982-07-29 Blaupunkt-Werke Gmbh, 3200 Hildesheim Regelbare HF-Eingangsstufe mit einem PIN-Dioden-Dämpfungsglied
FR2204333A5 (ja) * 1972-10-20 1974-05-17 Thomson Csf
NL7215200A (ja) * 1972-11-10 1974-05-14
JPS546750A (en) 1977-06-17 1979-01-19 Nec Corp Transistor amplifying device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100886841B1 (ko) * 2001-04-06 2009-03-05 엔엑스피 비 브이 가변 이득 증폭기, 송신기 및 송신기를 동적 바이어싱하는방법

Also Published As

Publication number Publication date
PT70923A (en) 1980-04-01
ES489572A0 (es) 1981-02-16
NL8001543A (nl) 1980-09-18
DE3009905C2 (de) 1986-12-11
ATA145580A (de) 1986-02-15
JPS6225265B2 (ja) 1987-06-02
DK113480A (da) 1980-09-17
GB2044565A (en) 1980-10-15
DE3009905A1 (de) 1980-09-25
NZ193128A (en) 1983-09-30
CA1145421A (en) 1983-04-26
GB2044565B (en) 1983-06-15
AU5626680A (en) 1980-09-18
FR2451663B1 (fr) 1986-08-14
IT1129644B (it) 1986-06-11
DD149742A5 (de) 1981-07-22
ES8103521A1 (es) 1981-02-16
JPS55130157A (en) 1980-10-08
AT381420B (de) 1986-10-10
SE451286B (sv) 1987-09-21
PL222725A1 (ja) 1981-01-30
KR830002454A (ko) 1983-05-28
AU539387B2 (en) 1984-09-27
US4275362A (en) 1981-06-23
IT8020549A0 (it) 1980-03-12
BE882248A (fr) 1980-07-01
FI800709A (fi) 1980-09-17
SE8001968L (sv) 1980-09-17
FR2451663A1 (fr) 1980-10-10
FI75953C (fi) 1988-08-08
FI75953B (fi) 1988-04-29
PL128485B1 (en) 1984-01-31

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