KR830000498B1 - 게이트 다이오드 스위치를 사용하는 고출력 증폭기/스위치 - Google Patents

게이트 다이오드 스위치를 사용하는 고출력 증폭기/스위치 Download PDF

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Publication number
KR830000498B1
KR830000498B1 KR1019790004539A KR790004539A KR830000498B1 KR 830000498 B1 KR830000498 B1 KR 830000498B1 KR 1019790004539 A KR1019790004539 A KR 1019790004539A KR 790004539 A KR790004539 A KR 790004539A KR 830000498 B1 KR830000498 B1 KR 830000498B1
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KR
South Korea
Prior art keywords
region
gate
cathode
anode
switch
Prior art date
Application number
KR1019790004539A
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English (en)
Korean (ko)
Inventor
랠프 하트만 아드리안
제임스 릴리 테레스
윌리암 색클 피터
Original Assignee
알 · 씨 · 원터
웨스턴 이렉트릭 컴페니, 인코퍼레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 알 · 씨 · 원터, 웨스턴 이렉트릭 컴페니, 인코퍼레이티드 filed Critical 알 · 씨 · 원터
Application granted granted Critical
Publication of KR830000498B1 publication Critical patent/KR830000498B1/ko

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
KR1019790004539A 1978-12-20 1979-12-20 게이트 다이오드 스위치를 사용하는 고출력 증폭기/스위치 KR830000498B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97202578A 1978-12-20 1978-12-20
US??72025 1978-12-20

Publications (1)

Publication Number Publication Date
KR830000498B1 true KR830000498B1 (ko) 1983-03-10

Family

ID=25519064

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019790004539A KR830000498B1 (ko) 1978-12-20 1979-12-20 게이트 다이오드 스위치를 사용하는 고출력 증폭기/스위치

Country Status (24)

Country Link
JP (1) JPS55501042A (fr)
KR (1) KR830000498B1 (fr)
AT (1) ATA906079A (fr)
AU (1) AU524717B2 (fr)
BE (1) BE880730A (fr)
CA (1) CA1122331A (fr)
DD (1) DD152664A5 (fr)
DE (1) DE2953403C2 (fr)
DK (1) DK347680A (fr)
ES (1) ES487068A1 (fr)
FR (1) FR2445075A1 (fr)
GB (1) GB2050716B (fr)
HK (1) HK69484A (fr)
HU (1) HU181029B (fr)
IE (1) IE48720B1 (fr)
IL (1) IL58972A (fr)
IN (1) IN153145B (fr)
IT (1) IT1126605B (fr)
NL (1) NL7920187A (fr)
PL (1) PL127059B1 (fr)
SE (1) SE424685B (fr)
SG (1) SG34984G (fr)
TR (1) TR20826A (fr)
WO (1) WO1980001346A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303831A (en) * 1979-07-30 1981-12-01 Bell Telephone Laboratories, Incorporated Optically triggered linear bilateral switch
US4275308A (en) * 1980-05-30 1981-06-23 Bell Telephone Laboratories, Incorporated Optically toggled device
FR2497423A1 (fr) * 1980-12-31 1982-07-02 Telemecanique Electrique Appareil detecteur du type a deux bornes, comportant un circuit d'alimentation en courant alternatif redresse et de commande d'une charge a l'aide de thyristors de commutation
FR2497424A1 (fr) * 1980-12-31 1982-07-02 Telemecanique Electrique Appareil detecteur du type a deux bornes alimente en courant alternatif redresse sous une tension pouvant varier dans une large gamme avec commande de la charge a l'aide de thyristors de commutation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3365588A (en) * 1968-01-23 Us Navy Multi-channel calibration circuit for generating a step-wave output voltage
DE1762842A1 (de) * 1968-09-07 1970-10-22 Richard Helleis Elektronischer Schalter,gesteuert durch zwei Lichtschranken
US3708672A (en) * 1971-03-29 1973-01-02 Honeywell Inf Systems Solid state relay using photo-coupled isolators
US4021683A (en) * 1975-01-03 1977-05-03 National Research Development Corporation Electronic switching circuits
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid

Also Published As

Publication number Publication date
SE8005705L (sv) 1980-08-13
BE880730A (fr) 1980-04-16
IE792475L (en) 1980-06-20
IL58972A (en) 1982-05-31
NL7920187A (nl) 1980-10-31
DD152664A5 (de) 1981-12-02
PL220495A1 (fr) 1980-09-08
GB2050716B (en) 1983-03-09
ES487068A1 (es) 1980-09-16
HK69484A (en) 1984-09-14
IL58972A0 (en) 1980-03-31
SG34984G (en) 1985-02-08
FR2445075A1 (fr) 1980-07-18
DE2953403C2 (de) 1983-01-20
SE424685B (sv) 1982-08-02
IT7928208A0 (it) 1979-12-19
TR20826A (tr) 1982-09-01
ATA906079A (de) 1984-08-15
AU5386779A (en) 1980-06-26
IE48720B1 (en) 1985-05-01
WO1980001346A1 (fr) 1980-06-26
DK347680A (da) 1980-08-12
GB2050716A (en) 1981-01-07
DE2953403T1 (de) 1980-12-18
PL127059B1 (en) 1983-09-30
CA1122331A (fr) 1982-04-20
IN153145B (fr) 1984-06-09
JPS55501042A (fr) 1980-11-27
AU524717B2 (en) 1982-09-30
IT1126605B (it) 1986-05-21
HU181029B (en) 1983-05-30

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