ATA906079A - Schaltanordnung mit einem torgesteuerten diodenschalter - Google Patents

Schaltanordnung mit einem torgesteuerten diodenschalter

Info

Publication number
ATA906079A
ATA906079A AT0906079A AT906079A ATA906079A AT A906079 A ATA906079 A AT A906079A AT 0906079 A AT0906079 A AT 0906079A AT 906079 A AT906079 A AT 906079A AT A906079 A ATA906079 A AT A906079A
Authority
AT
Austria
Prior art keywords
switching arrangement
gate controlled
diode switch
controlled diode
gate
Prior art date
Application number
AT0906079A
Other languages
English (en)
Inventor
Adrian Ralph Hartmann
Terence James Riley
Peter William Shackle
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of ATA906079A publication Critical patent/ATA906079A/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10Modifications for increasing the maximum permissible switched voltage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391Gated diode structures
    • H01L29/7392Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
AT0906079A 1978-12-20 1979-12-12 Schaltanordnung mit einem torgesteuerten diodenschalter ATA906079A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97202578A 1978-12-20 1978-12-20
PCT/US1979/001072 WO1980001346A1 (en) 1978-12-20 1979-12-12 High power amplifier/switch using gated diode switch

Publications (1)

Publication Number Publication Date
ATA906079A true ATA906079A (de) 1984-08-15

Family

ID=25519064

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0906079A ATA906079A (de) 1978-12-20 1979-12-12 Schaltanordnung mit einem torgesteuerten diodenschalter

Country Status (24)

Country Link
JP (1) JPS55501042A (de)
KR (1) KR830000498B1 (de)
AT (1) ATA906079A (de)
AU (1) AU524717B2 (de)
BE (1) BE880730A (de)
CA (1) CA1122331A (de)
DD (1) DD152664A5 (de)
DE (1) DE2953403C2 (de)
DK (1) DK347680A (de)
ES (1) ES487068A1 (de)
FR (1) FR2445075A1 (de)
GB (1) GB2050716B (de)
HK (1) HK69484A (de)
HU (1) HU181029B (de)
IE (1) IE48720B1 (de)
IL (1) IL58972A (de)
IN (1) IN153145B (de)
IT (1) IT1126605B (de)
NL (1) NL7920187A (de)
PL (1) PL127059B1 (de)
SE (1) SE424685B (de)
SG (1) SG34984G (de)
TR (1) TR20826A (de)
WO (1) WO1980001346A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303831A (en) * 1979-07-30 1981-12-01 Bell Telephone Laboratories, Incorporated Optically triggered linear bilateral switch
US4275308A (en) * 1980-05-30 1981-06-23 Bell Telephone Laboratories, Incorporated Optically toggled device
FR2497424A1 (fr) * 1980-12-31 1982-07-02 Telemecanique Electrique Appareil detecteur du type a deux bornes alimente en courant alternatif redresse sous une tension pouvant varier dans une large gamme avec commande de la charge a l'aide de thyristors de commutation
FR2497423A1 (fr) * 1980-12-31 1982-07-02 Telemecanique Electrique Appareil detecteur du type a deux bornes, comportant un circuit d'alimentation en courant alternatif redresse et de commande d'une charge a l'aide de thyristors de commutation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3365588A (en) * 1968-01-23 Us Navy Multi-channel calibration circuit for generating a step-wave output voltage
DE1762842A1 (de) * 1968-09-07 1970-10-22 Richard Helleis Elektronischer Schalter,gesteuert durch zwei Lichtschranken
US3708672A (en) * 1971-03-29 1973-01-02 Honeywell Inf Systems Solid state relay using photo-coupled isolators
US4021683A (en) * 1975-01-03 1977-05-03 National Research Development Corporation Electronic switching circuits
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid

Also Published As

Publication number Publication date
PL220495A1 (de) 1980-09-08
AU524717B2 (en) 1982-09-30
IT1126605B (it) 1986-05-21
HK69484A (en) 1984-09-14
HU181029B (en) 1983-05-30
IE792475L (en) 1980-06-20
JPS55501042A (de) 1980-11-27
KR830000498B1 (ko) 1983-03-10
DE2953403T1 (de) 1980-12-18
SE8005705L (sv) 1980-08-13
CA1122331A (en) 1982-04-20
GB2050716A (en) 1981-01-07
NL7920187A (nl) 1980-10-31
IN153145B (de) 1984-06-09
AU5386779A (en) 1980-06-26
BE880730A (fr) 1980-04-16
IT7928208A0 (it) 1979-12-19
DE2953403C2 (de) 1983-01-20
ES487068A1 (es) 1980-09-16
PL127059B1 (en) 1983-09-30
IL58972A (en) 1982-05-31
IL58972A0 (en) 1980-03-31
WO1980001346A1 (en) 1980-06-26
IE48720B1 (en) 1985-05-01
FR2445075A1 (fr) 1980-07-18
GB2050716B (en) 1983-03-09
SG34984G (en) 1985-02-08
DD152664A5 (de) 1981-12-02
DK347680A (da) 1980-08-12
SE424685B (sv) 1982-08-02
TR20826A (tr) 1982-09-01

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Legal Events

Date Code Title Description
A1Z Withdrawn