ES487068A1 - Perfeccionamientos en circuitos de conmutacion de estado so-lido - Google Patents

Perfeccionamientos en circuitos de conmutacion de estado so-lido

Info

Publication number
ES487068A1
ES487068A1 ES487068A ES487068A ES487068A1 ES 487068 A1 ES487068 A1 ES 487068A1 ES 487068 A ES487068 A ES 487068A ES 487068 A ES487068 A ES 487068A ES 487068 A1 ES487068 A1 ES 487068A1
Authority
ES
Spain
Prior art keywords
switch
gated diode
power amplifier
high power
high voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES487068A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES487068A1 publication Critical patent/ES487068A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10Modifications for increasing the maximum permissible switched voltage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391Gated diode structures
    • H01L29/7392Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)

Abstract

Perfeccionamiento en circuitos de conmutación de estado sólido, del tipo que comprenden, un interruptor de diodo de desconexión cíclica (GDS) que comprende un cuerpo semiconductor cuya parte principal es de un primer tipo de conductividad, una primera región del primer de tipo de conductividad, una segunda región del segundo tipo de conductividad opuesta a la del primer tipo de conductividad, una región de puerta del segundo tipo de conductividad, estando mutuamente separadas la primera región, la segunda región y la región de puerta por partes de la masa principal del cuerpo semiconductor, siendo la resistividad de la parte principal o masa relativamente baja si se compara con las resistividades de la primera, segunda regiones y región de puerta; terminales y un terminal de puerta conectado a la región de puerta; siendo los parámetros del dispositivo de tal naturaleza que, alimentándose un primer voltaje a la región de puerta, se forme una región de transición en el cuerpo semiconductor que evite virtualmente el flujo de corriente entre la primera y la segunda regiones y que, alimentandose un segundo voltaje a la región de puerta y alimentandose voltaje apropiados a la primera y la segunda regiones, se establezca un trayecto de corriente de resistencia relativamente baja entre la primera y la segunda regiones por doble inyección de portadores, caracterizados porque a un terminal de salida del interruptor de diodo de desconexión cíclica, se conecta un amplificador y es éste y el terminal de puerta del díodo, se conecta un dispositivo de circuito de desplazamiento de nivel.
ES487068A 1978-12-20 1979-12-19 Perfeccionamientos en circuitos de conmutacion de estado so-lido Expired ES487068A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97202578A 1978-12-20 1978-12-20

Publications (1)

Publication Number Publication Date
ES487068A1 true ES487068A1 (es) 1980-09-16

Family

ID=25519064

Family Applications (1)

Application Number Title Priority Date Filing Date
ES487068A Expired ES487068A1 (es) 1978-12-20 1979-12-19 Perfeccionamientos en circuitos de conmutacion de estado so-lido

Country Status (24)

Country Link
JP (1) JPS55501042A (es)
KR (1) KR830000498B1 (es)
AT (1) ATA906079A (es)
AU (1) AU524717B2 (es)
BE (1) BE880730A (es)
CA (1) CA1122331A (es)
DD (1) DD152664A5 (es)
DE (1) DE2953403C2 (es)
DK (1) DK347680A (es)
ES (1) ES487068A1 (es)
FR (1) FR2445075A1 (es)
GB (1) GB2050716B (es)
HK (1) HK69484A (es)
HU (1) HU181029B (es)
IE (1) IE48720B1 (es)
IL (1) IL58972A (es)
IN (1) IN153145B (es)
IT (1) IT1126605B (es)
NL (1) NL7920187A (es)
PL (1) PL127059B1 (es)
SE (1) SE424685B (es)
SG (1) SG34984G (es)
TR (1) TR20826A (es)
WO (1) WO1980001346A1 (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303831A (en) * 1979-07-30 1981-12-01 Bell Telephone Laboratories, Incorporated Optically triggered linear bilateral switch
US4275308A (en) * 1980-05-30 1981-06-23 Bell Telephone Laboratories, Incorporated Optically toggled device
FR2497423A1 (fr) * 1980-12-31 1982-07-02 Telemecanique Electrique Appareil detecteur du type a deux bornes, comportant un circuit d'alimentation en courant alternatif redresse et de commande d'une charge a l'aide de thyristors de commutation
FR2497424A1 (fr) * 1980-12-31 1982-07-02 Telemecanique Electrique Appareil detecteur du type a deux bornes alimente en courant alternatif redresse sous une tension pouvant varier dans une large gamme avec commande de la charge a l'aide de thyristors de commutation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3365588A (en) * 1968-01-23 Us Navy Multi-channel calibration circuit for generating a step-wave output voltage
DE1762842A1 (de) * 1968-09-07 1970-10-22 Richard Helleis Elektronischer Schalter,gesteuert durch zwei Lichtschranken
US3708672A (en) * 1971-03-29 1973-01-02 Honeywell Inf Systems Solid state relay using photo-coupled isolators
US4021683A (en) * 1975-01-03 1977-05-03 National Research Development Corporation Electronic switching circuits
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid

Also Published As

Publication number Publication date
PL220495A1 (es) 1980-09-08
SG34984G (en) 1985-02-08
HK69484A (en) 1984-09-14
JPS55501042A (es) 1980-11-27
IE48720B1 (en) 1985-05-01
HU181029B (en) 1983-05-30
AU5386779A (en) 1980-06-26
IL58972A0 (en) 1980-03-31
DD152664A5 (de) 1981-12-02
NL7920187A (nl) 1980-10-31
FR2445075A1 (fr) 1980-07-18
ATA906079A (de) 1984-08-15
SE424685B (sv) 1982-08-02
CA1122331A (en) 1982-04-20
GB2050716B (en) 1983-03-09
GB2050716A (en) 1981-01-07
IN153145B (es) 1984-06-09
TR20826A (tr) 1982-09-01
DE2953403T1 (de) 1980-12-18
BE880730A (fr) 1980-04-16
PL127059B1 (en) 1983-09-30
IE792475L (en) 1980-06-20
KR830000498B1 (ko) 1983-03-10
IT1126605B (it) 1986-05-21
IT7928208A0 (it) 1979-12-19
WO1980001346A1 (en) 1980-06-26
DE2953403C2 (de) 1983-01-20
IL58972A (en) 1982-05-31
AU524717B2 (en) 1982-09-30
DK347680A (da) 1980-08-12
SE8005705L (sv) 1980-08-13

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