PL127059B1 - High power amplifying and switching system - Google Patents
High power amplifying and switching system Download PDFInfo
- Publication number
- PL127059B1 PL127059B1 PL1979220495A PL22049579A PL127059B1 PL 127059 B1 PL127059 B1 PL 127059B1 PL 1979220495 A PL1979220495 A PL 1979220495A PL 22049579 A PL22049579 A PL 22049579A PL 127059 B1 PL127059 B1 PL 127059B1
- Authority
- PL
- Poland
- Prior art keywords
- amplifier
- switch
- circuit
- terminal
- gate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 10
- 230000003321 amplification Effects 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 8
- 101100336452 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GDS1 gene Proteins 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 3
- 101100504379 Mus musculus Gfral gene Proteins 0.000 claims description 2
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- 230000002457 bidirectional effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241001489705 Aquarius Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97202578A | 1978-12-20 | 1978-12-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL220495A1 PL220495A1 (fr) | 1980-09-08 |
| PL127059B1 true PL127059B1 (en) | 1983-09-30 |
Family
ID=25519064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL1979220495A PL127059B1 (en) | 1978-12-20 | 1979-12-18 | High power amplifying and switching system |
Country Status (24)
| Country | Link |
|---|---|
| JP (1) | JPS55501042A (fr) |
| KR (1) | KR830000498B1 (fr) |
| AT (1) | ATA906079A (fr) |
| AU (1) | AU524717B2 (fr) |
| BE (1) | BE880730A (fr) |
| CA (1) | CA1122331A (fr) |
| DD (1) | DD152664A5 (fr) |
| DE (1) | DE2953403C2 (fr) |
| DK (1) | DK347680A (fr) |
| ES (1) | ES487068A1 (fr) |
| FR (1) | FR2445075A1 (fr) |
| GB (1) | GB2050716B (fr) |
| HK (1) | HK69484A (fr) |
| HU (1) | HU181029B (fr) |
| IE (1) | IE48720B1 (fr) |
| IL (1) | IL58972A (fr) |
| IN (1) | IN153145B (fr) |
| IT (1) | IT1126605B (fr) |
| NL (1) | NL7920187A (fr) |
| PL (1) | PL127059B1 (fr) |
| SE (1) | SE424685B (fr) |
| SG (1) | SG34984G (fr) |
| TR (1) | TR20826A (fr) |
| WO (1) | WO1980001346A1 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4303831A (en) * | 1979-07-30 | 1981-12-01 | Bell Telephone Laboratories, Incorporated | Optically triggered linear bilateral switch |
| US4275308A (en) * | 1980-05-30 | 1981-06-23 | Bell Telephone Laboratories, Incorporated | Optically toggled device |
| FR2497423A1 (fr) * | 1980-12-31 | 1982-07-02 | Telemecanique Electrique | Appareil detecteur du type a deux bornes, comportant un circuit d'alimentation en courant alternatif redresse et de commande d'une charge a l'aide de thyristors de commutation |
| FR2497424A1 (fr) * | 1980-12-31 | 1982-07-02 | Telemecanique Electrique | Appareil detecteur du type a deux bornes alimente en courant alternatif redresse sous une tension pouvant varier dans une large gamme avec commande de la charge a l'aide de thyristors de commutation |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3365588A (en) * | 1968-01-23 | Us Navy | Multi-channel calibration circuit for generating a step-wave output voltage | |
| DE1762842A1 (de) * | 1968-09-07 | 1970-10-22 | Richard Helleis | Elektronischer Schalter,gesteuert durch zwei Lichtschranken |
| US3708672A (en) * | 1971-03-29 | 1973-01-02 | Honeywell Inf Systems | Solid state relay using photo-coupled isolators |
| US4021683A (en) * | 1975-01-03 | 1977-05-03 | National Research Development Corporation | Electronic switching circuits |
| US4060821A (en) * | 1976-06-21 | 1977-11-29 | General Electric Co. | Field controlled thyristor with buried grid |
-
1979
- 1979-12-10 HU HU79WE613A patent/HU181029B/hu unknown
- 1979-12-12 GB GB8025971A patent/GB2050716B/en not_active Expired
- 1979-12-12 AT AT0906079A patent/ATA906079A/de not_active Application Discontinuation
- 1979-12-12 WO PCT/US1979/001072 patent/WO1980001346A1/fr unknown
- 1979-12-12 DE DE2953403T patent/DE2953403C2/de not_active Expired
- 1979-12-12 NL NL7920187A patent/NL7920187A/nl unknown
- 1979-12-12 JP JP80500217A patent/JPS55501042A/ja active Pending
- 1979-12-14 AU AU53867/79A patent/AU524717B2/en not_active Ceased
- 1979-12-14 DD DD79217697A patent/DD152664A5/de unknown
- 1979-12-17 IL IL58972A patent/IL58972A/xx unknown
- 1979-12-18 PL PL1979220495A patent/PL127059B1/pl unknown
- 1979-12-18 TR TR20826A patent/TR20826A/xx unknown
- 1979-12-19 IE IE2475/79A patent/IE48720B1/en unknown
- 1979-12-19 IT IT28208/79A patent/IT1126605B/it active
- 1979-12-19 BE BE0/198643A patent/BE880730A/fr not_active IP Right Cessation
- 1979-12-19 ES ES487068A patent/ES487068A1/es not_active Expired
- 1979-12-19 FR FR7931098A patent/FR2445075A1/fr active Pending
- 1979-12-20 KR KR1019790004539A patent/KR830000498B1/ko active
- 1979-12-20 CA CA342,384A patent/CA1122331A/fr not_active Expired
-
1980
- 1980-08-12 DK DK347680A patent/DK347680A/da not_active Application Discontinuation
- 1980-08-13 SE SE8005705A patent/SE424685B/sv unknown
- 1980-12-12 IN IN1376/CAL/80A patent/IN153145B/en unknown
-
1984
- 1984-05-04 SG SG34984A patent/SG34984G/en unknown
- 1984-09-06 HK HK694/84A patent/HK69484A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL7920187A (nl) | 1980-10-31 |
| HK69484A (en) | 1984-09-14 |
| WO1980001346A1 (fr) | 1980-06-26 |
| AU524717B2 (en) | 1982-09-30 |
| KR830000498B1 (ko) | 1983-03-10 |
| BE880730A (fr) | 1980-04-16 |
| IE48720B1 (en) | 1985-05-01 |
| IN153145B (fr) | 1984-06-09 |
| GB2050716A (en) | 1981-01-07 |
| SE424685B (sv) | 1982-08-02 |
| JPS55501042A (fr) | 1980-11-27 |
| IL58972A0 (en) | 1980-03-31 |
| GB2050716B (en) | 1983-03-09 |
| ES487068A1 (es) | 1980-09-16 |
| DE2953403T1 (de) | 1980-12-18 |
| IT1126605B (it) | 1986-05-21 |
| CA1122331A (fr) | 1982-04-20 |
| DE2953403C2 (de) | 1983-01-20 |
| SG34984G (en) | 1985-02-08 |
| IL58972A (en) | 1982-05-31 |
| IE792475L (en) | 1980-06-20 |
| IT7928208A0 (it) | 1979-12-19 |
| AU5386779A (en) | 1980-06-26 |
| HU181029B (en) | 1983-05-30 |
| DK347680A (da) | 1980-08-12 |
| DD152664A5 (de) | 1981-12-02 |
| ATA906079A (de) | 1984-08-15 |
| SE8005705L (sv) | 1980-08-13 |
| PL220495A1 (fr) | 1980-09-08 |
| TR20826A (tr) | 1982-09-01 |
| FR2445075A1 (fr) | 1980-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4816892A (en) | Semiconductor device having turn-on and turn-off capabilities | |
| EP0166390B1 (fr) | Circuit de commutation à semi-conducteurs | |
| CN102593168A (zh) | 半导体器件和逆导igbt | |
| JP2006158185A (ja) | 電力用半導体装置 | |
| WO1996015558A1 (fr) | Dispositif de commutation c.a. bidirectionnelle a commande de mise sous tension et de mise hors tension a porte mos | |
| JP2018067730A (ja) | サージ保護素子 | |
| CN109427869A (zh) | 一种半导体器件 | |
| US11282937B2 (en) | Semiconductor device and power conversion device | |
| KR100286842B1 (ko) | 역전압 보호 회로를 구비한 파워 디바이스 | |
| CN106067799B (zh) | 一种半导体器件 | |
| WO2013153937A1 (fr) | Dispositif à diodes semi-conductrices | |
| PL127059B1 (en) | High power amplifying and switching system | |
| US6137122A (en) | Latch-up controllable insulated gate bipolar transistor | |
| US9654027B2 (en) | Semiconductor device and power converter using the same | |
| CN109216461B (zh) | 集成肖特基二极管的u型源槽vdmosfet器件 | |
| Guerriero et al. | A GaN based bidirectional switch for matrix converter applications | |
| JP2021072407A (ja) | 半導体装置 | |
| CA1201214A (fr) | Dispositif semiconducteur a composant d'excitation et de coupure | |
| CN215897609U (zh) | 基于电涌抑制晶闸管的整流电路、整流芯片及电子器件 | |
| US20240137024A1 (en) | Ternary logic element and ternary logic system including same | |
| CN111193417B (zh) | 开关元件的控制装置 | |
| JPH0444848B2 (fr) | ||
| CN118198146B (zh) | 一种半导体功率器件及其制备方法 | |
| US10466732B2 (en) | Switching regulator and control circuit and control method thereof | |
| Hartman et al. | 530V Integrated gated diode switch for telecommunications |