SE424685B - Forsterkar/switch-organ for hog effekt - Google Patents
Forsterkar/switch-organ for hog effektInfo
- Publication number
- SE424685B SE424685B SE8005705A SE8005705A SE424685B SE 424685 B SE424685 B SE 424685B SE 8005705 A SE8005705 A SE 8005705A SE 8005705 A SE8005705 A SE 8005705A SE 424685 B SE424685 B SE 424685B
- Authority
- SE
- Sweden
- Prior art keywords
- amplifier
- transistor
- switching circuit
- region
- control
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 230000009977 dual effect Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 3
- 230000002950 deficient Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 230000002457 bidirectional effect Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000002146 bilateral effect Effects 0.000 description 2
- 101100336452 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GDS1 gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007844 bleaching agent Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US97202578A | 1978-12-20 | 1978-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE8005705L SE8005705L (sv) | 1980-08-13 |
SE424685B true SE424685B (sv) | 1982-08-02 |
Family
ID=25519064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8005705A SE424685B (sv) | 1978-12-20 | 1980-08-13 | Forsterkar/switch-organ for hog effekt |
Country Status (24)
Country | Link |
---|---|
JP (1) | JPS55501042A (fr) |
KR (1) | KR830000498B1 (fr) |
AT (1) | ATA906079A (fr) |
AU (1) | AU524717B2 (fr) |
BE (1) | BE880730A (fr) |
CA (1) | CA1122331A (fr) |
DD (1) | DD152664A5 (fr) |
DE (1) | DE2953403C2 (fr) |
DK (1) | DK347680A (fr) |
ES (1) | ES487068A1 (fr) |
FR (1) | FR2445075A1 (fr) |
GB (1) | GB2050716B (fr) |
HK (1) | HK69484A (fr) |
HU (1) | HU181029B (fr) |
IE (1) | IE48720B1 (fr) |
IL (1) | IL58972A (fr) |
IN (1) | IN153145B (fr) |
IT (1) | IT1126605B (fr) |
NL (1) | NL7920187A (fr) |
PL (1) | PL127059B1 (fr) |
SE (1) | SE424685B (fr) |
SG (1) | SG34984G (fr) |
TR (1) | TR20826A (fr) |
WO (1) | WO1980001346A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4303831A (en) * | 1979-07-30 | 1981-12-01 | Bell Telephone Laboratories, Incorporated | Optically triggered linear bilateral switch |
US4275308A (en) * | 1980-05-30 | 1981-06-23 | Bell Telephone Laboratories, Incorporated | Optically toggled device |
FR2497423A1 (fr) * | 1980-12-31 | 1982-07-02 | Telemecanique Electrique | Appareil detecteur du type a deux bornes, comportant un circuit d'alimentation en courant alternatif redresse et de commande d'une charge a l'aide de thyristors de commutation |
FR2497424A1 (fr) * | 1980-12-31 | 1982-07-02 | Telemecanique Electrique | Appareil detecteur du type a deux bornes alimente en courant alternatif redresse sous une tension pouvant varier dans une large gamme avec commande de la charge a l'aide de thyristors de commutation |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3365588A (en) * | 1968-01-23 | Us Navy | Multi-channel calibration circuit for generating a step-wave output voltage | |
DE1762842A1 (de) * | 1968-09-07 | 1970-10-22 | Richard Helleis | Elektronischer Schalter,gesteuert durch zwei Lichtschranken |
US3708672A (en) * | 1971-03-29 | 1973-01-02 | Honeywell Inf Systems | Solid state relay using photo-coupled isolators |
US4021683A (en) * | 1975-01-03 | 1977-05-03 | National Research Development Corporation | Electronic switching circuits |
US4060821A (en) * | 1976-06-21 | 1977-11-29 | General Electric Co. | Field controlled thyristor with buried grid |
-
1979
- 1979-12-10 HU HU79WE613A patent/HU181029B/hu unknown
- 1979-12-12 GB GB8025971A patent/GB2050716B/en not_active Expired
- 1979-12-12 AT AT0906079A patent/ATA906079A/de not_active Application Discontinuation
- 1979-12-12 WO PCT/US1979/001072 patent/WO1980001346A1/fr unknown
- 1979-12-12 DE DE2953403T patent/DE2953403C2/de not_active Expired
- 1979-12-12 NL NL7920187A patent/NL7920187A/nl unknown
- 1979-12-12 JP JP80500217A patent/JPS55501042A/ja active Pending
- 1979-12-14 AU AU53867/79A patent/AU524717B2/en not_active Ceased
- 1979-12-14 DD DD79217697A patent/DD152664A5/de unknown
- 1979-12-17 IL IL58972A patent/IL58972A/xx unknown
- 1979-12-18 PL PL1979220495A patent/PL127059B1/pl unknown
- 1979-12-18 TR TR20826A patent/TR20826A/xx unknown
- 1979-12-19 IE IE2475/79A patent/IE48720B1/en unknown
- 1979-12-19 IT IT28208/79A patent/IT1126605B/it active
- 1979-12-19 BE BE0/198643A patent/BE880730A/fr not_active IP Right Cessation
- 1979-12-19 ES ES487068A patent/ES487068A1/es not_active Expired
- 1979-12-19 FR FR7931098A patent/FR2445075A1/fr active Pending
- 1979-12-20 KR KR1019790004539A patent/KR830000498B1/ko active
- 1979-12-20 CA CA342,384A patent/CA1122331A/fr not_active Expired
-
1980
- 1980-08-12 DK DK347680A patent/DK347680A/da not_active Application Discontinuation
- 1980-08-13 SE SE8005705A patent/SE424685B/sv unknown
- 1980-12-12 IN IN1376/CAL/80A patent/IN153145B/en unknown
-
1984
- 1984-05-04 SG SG34984A patent/SG34984G/en unknown
- 1984-09-06 HK HK694/84A patent/HK69484A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL7920187A (nl) | 1980-10-31 |
HK69484A (en) | 1984-09-14 |
WO1980001346A1 (fr) | 1980-06-26 |
AU524717B2 (en) | 1982-09-30 |
KR830000498B1 (ko) | 1983-03-10 |
BE880730A (fr) | 1980-04-16 |
IE48720B1 (en) | 1985-05-01 |
IN153145B (fr) | 1984-06-09 |
GB2050716A (en) | 1981-01-07 |
PL127059B1 (en) | 1983-09-30 |
JPS55501042A (fr) | 1980-11-27 |
IL58972A0 (en) | 1980-03-31 |
GB2050716B (en) | 1983-03-09 |
ES487068A1 (es) | 1980-09-16 |
DE2953403T1 (de) | 1980-12-18 |
IT1126605B (it) | 1986-05-21 |
CA1122331A (fr) | 1982-04-20 |
DE2953403C2 (de) | 1983-01-20 |
SG34984G (en) | 1985-02-08 |
IL58972A (en) | 1982-05-31 |
IE792475L (en) | 1980-06-20 |
IT7928208A0 (it) | 1979-12-19 |
AU5386779A (en) | 1980-06-26 |
HU181029B (en) | 1983-05-30 |
DK347680A (da) | 1980-08-12 |
DD152664A5 (de) | 1981-12-02 |
ATA906079A (de) | 1984-08-15 |
SE8005705L (sv) | 1980-08-13 |
PL220495A1 (fr) | 1980-09-08 |
TR20826A (tr) | 1982-09-01 |
FR2445075A1 (fr) | 1980-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT8322946A1 (it) | Circuito di protezione per dispositivi a circuito integrato | |
JPS5947469B2 (ja) | 半導体デバイス | |
CN112470403B (zh) | 包括晶体管和二极管的电路和器件 | |
CN108781076A (zh) | 具有防止意外导通的被动部件的双基极连接式双极晶体管 | |
US4754175A (en) | Solid state relay having a thyristor discharge circuit | |
JPS58501205A (ja) | モノリシツクに合併されたfet及びバイポ−ラ接合トランジスタ | |
JP5792323B2 (ja) | 2つの型の電荷キャリアを制御するサイリスタ | |
SE455552B (sv) | Halvledaranordning innefattande en overspenningsskyddskrets | |
CN110085583B (zh) | 半导体器件和操作方法 | |
SE424685B (sv) | Forsterkar/switch-organ for hog effekt | |
EP0018172B1 (fr) | Circuit de commutation à grande vitesse | |
US3158754A (en) | Double injection semiconductor device | |
JPH05243504A (ja) | 導通電力損失を最適化する集積ブリッジ・デバイス | |
TW202121842A (zh) | 包括電晶體和二極體的電路和裝置 | |
US4516037A (en) | Control circuitry for high voltage solid-state switches | |
JP2010067663A (ja) | リレー回路 | |
KR20010080699A (ko) | 아날로그 스위치 | |
Hartman et al. | 530V Integrated gated diode switch for telecommunications | |
CN109995351B (zh) | 开关集成器件 | |
KR830001097B1 (ko) | 게이트 다이오드 스위치용 제어회로 | |
EP1028468A1 (fr) | Circuit de polarisation pour région d'isolation dans un circuit intégré de puissance | |
US9871129B2 (en) | Thyristor, a method of triggering a thyristor, and thyristor circuits | |
KR20120021661A (ko) | 반도체 장치의 사이리스터 | |
SU789018A1 (ru) | Полупроводниковое запоминающее устройство | |
JPH06268498A (ja) | 光結合型半導体リレー |