KR20260028049A - 레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법 - Google Patents

레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법

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Publication number
KR20260028049A
KR20260028049A KR1020267001954A KR20267001954A KR20260028049A KR 20260028049 A KR20260028049 A KR 20260028049A KR 1020267001954 A KR1020267001954 A KR 1020267001954A KR 20267001954 A KR20267001954 A KR 20267001954A KR 20260028049 A KR20260028049 A KR 20260028049A
Authority
KR
South Korea
Prior art keywords
resist pattern
resist
solution
alkyl
resist patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020267001954A
Other languages
English (en)
Korean (ko)
Inventor
카즈마 야마모토
타카후미 키누타
타츠로 나가하라
마키 이시이
Original Assignee
메르크 파텐트 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 메르크 파텐트 게엠베하 filed Critical 메르크 파텐트 게엠베하
Publication of KR20260028049A publication Critical patent/KR20260028049A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020267001954A 2019-11-18 2020-11-16 레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법 Pending KR20260028049A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2019-207844 2019-11-18
JP2019207844A JP2021081545A (ja) 2019-11-18 2019-11-18 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法
KR1020227020742A KR102917530B1 (ko) 2019-11-18 2020-11-16 레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법
PCT/EP2020/082179 WO2021099235A1 (en) 2019-11-18 2020-11-16 Replacement liquid of liquid filling between resist patterns, and method for producing resist patterns using the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020227020742A Division KR102917530B1 (ko) 2019-11-18 2020-11-16 레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법

Publications (1)

Publication Number Publication Date
KR20260028049A true KR20260028049A (ko) 2026-03-03

Family

ID=73455692

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020267001954A Pending KR20260028049A (ko) 2019-11-18 2020-11-16 레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법
KR1020227020742A Active KR102917530B1 (ko) 2019-11-18 2020-11-16 레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020227020742A Active KR102917530B1 (ko) 2019-11-18 2020-11-16 레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법

Country Status (7)

Country Link
US (1) US20230045307A1 (https=)
EP (1) EP4062235A1 (https=)
JP (3) JP2021081545A (https=)
KR (2) KR20260028049A (https=)
CN (1) CN114730144A (https=)
TW (2) TWI887299B (https=)
WO (1) WO2021099235A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022175281A (ja) 2021-05-13 2022-11-25 トヨタ自動車株式会社 提案システムおよび提案方法
WO2024141355A1 (en) * 2022-12-26 2024-07-04 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
EP4649359A1 (en) * 2023-01-13 2025-11-19 Merck Patent GmbH Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
KR20240170272A (ko) * 2023-05-26 2024-12-03 삼성에스디아이 주식회사 금속 함유 포토레지스트 현상액 조성물, 및 이를 이용한 현상 단계를 포함하는 패턴 형성 방법
TW202538046A (zh) * 2023-10-25 2025-10-01 德商默克專利有限公司 電子機器製造水溶液、光阻圖案之製造方法及裝置之製造方法
WO2026046920A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026046961A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

Family Cites Families (18)

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DE19822441A1 (de) * 1997-06-24 1999-01-28 Heidelberger Druckmasch Ag Druckformreinigungsverfahren
JP4493393B2 (ja) * 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
KR100858594B1 (ko) * 2004-04-23 2008-09-17 토쿄오오카코교 가부시기가이샤 레지스트 패턴 형성방법 및 복합 린스액
JP2006011054A (ja) * 2004-06-25 2006-01-12 Shin Etsu Chem Co Ltd リンス液及びこれを用いたレジストパターン形成方法
CN101010640A (zh) * 2004-09-01 2007-08-01 东京应化工业株式会社 光蚀刻用显影液组合物与抗蚀图案的形成方法
WO2007080726A1 (ja) * 2006-01-11 2007-07-19 Tokyo Ohka Kogyo Co., Ltd. リソグラフィー用洗浄剤及びそれを用いたレジストパターン形成方法
US20100028803A1 (en) * 2008-08-01 2010-02-04 Fujifilm Corporation Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern
JP5624753B2 (ja) * 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法
JP5867732B2 (ja) * 2010-12-09 2016-02-24 日産化学工業株式会社 水酸基含有カルバゾールノボラック樹脂を含むレジスト下層膜形成組成物
JP5705607B2 (ja) * 2011-03-23 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
EP3208659A1 (en) 2014-10-14 2017-08-23 AZ Electronic Materials (Luxembourg) S.à.r.l. Composition for resist patterning and method for forming pattern using same
JP6455397B2 (ja) * 2014-11-27 2019-01-23 信越化学工業株式会社 パターン形成用リンス溶液及びパターン形成方法
JP6428568B2 (ja) * 2014-11-27 2018-11-28 信越化学工業株式会社 パターン形成用リンス溶液及びパターン形成方法
JP6646073B2 (ja) * 2016-01-22 2020-02-14 富士フイルム株式会社 処理液
TWI717526B (zh) * 2016-06-20 2021-02-01 盧森堡商Ａｚ電子材料盧森堡有限公司 清洗組成物、形成光阻圖案之方法及製造半導體裝置之方法
JP6759174B2 (ja) * 2016-11-07 2020-09-23 富士フイルム株式会社 処理液及びパターン形成方法
CN110023841B (zh) 2016-11-25 2023-05-30 默克专利有限公司 光刻组合物、形成抗蚀图案的方法和制造半导体器件的方法
JP2018127513A (ja) * 2017-02-06 2018-08-16 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物、およびその使用

Also Published As

Publication number Publication date
JP2021081545A (ja) 2021-05-27
TW202600801A (zh) 2026-01-01
US20230045307A1 (en) 2023-02-09
KR102917530B1 (ko) 2026-01-23
WO2021099235A1 (en) 2021-05-27
JP7732976B2 (ja) 2025-09-02
KR20220104768A (ko) 2022-07-26
TW202124692A (zh) 2021-07-01
TWI887299B (zh) 2025-06-21
JP2025114656A (ja) 2025-08-05
CN114730144A (zh) 2022-07-08
EP4062235A1 (en) 2022-09-28
JP2023502837A (ja) 2023-01-26

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