TWI887299B - 光阻圖案間置換液、及使用其之光阻圖案之製造方法 - Google Patents

光阻圖案間置換液、及使用其之光阻圖案之製造方法 Download PDF

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Publication number
TWI887299B
TWI887299B TW109140073A TW109140073A TWI887299B TW I887299 B TWI887299 B TW I887299B TW 109140073 A TW109140073 A TW 109140073A TW 109140073 A TW109140073 A TW 109140073A TW I887299 B TWI887299 B TW I887299B
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TW
Taiwan
Prior art keywords
photoresist pattern
photoresist
alkyl
mass
liquid
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TW109140073A
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English (en)
Chinese (zh)
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TW202124692A (zh
Inventor
山本和磨
絹田貴史
長原達郎
石井牧
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德商默克專利有限公司
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Publication of TW202124692A publication Critical patent/TW202124692A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW109140073A 2019-11-18 2020-11-17 光阻圖案間置換液、及使用其之光阻圖案之製造方法 TWI887299B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-207844 2019-11-18
JP2019207844A JP2021081545A (ja) 2019-11-18 2019-11-18 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法

Publications (2)

Publication Number Publication Date
TW202124692A TW202124692A (zh) 2021-07-01
TWI887299B true TWI887299B (zh) 2025-06-21

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ID=73455692

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TW109140073A TWI887299B (zh) 2019-11-18 2020-11-17 光阻圖案間置換液、及使用其之光阻圖案之製造方法
TW114117721A TW202600801A (zh) 2019-11-18 2020-11-17 光阻圖案間置換液、及使用其之光阻圖案之製造方法

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Country Status (7)

Country Link
US (1) US20230045307A1 (https=)
EP (1) EP4062235A1 (https=)
JP (3) JP2021081545A (https=)
KR (2) KR20260028049A (https=)
CN (1) CN114730144A (https=)
TW (2) TWI887299B (https=)
WO (1) WO2021099235A1 (https=)

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JP2022175281A (ja) 2021-05-13 2022-11-25 トヨタ自動車株式会社 提案システムおよび提案方法
WO2024141355A1 (en) * 2022-12-26 2024-07-04 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
EP4649359A1 (en) * 2023-01-13 2025-11-19 Merck Patent GmbH Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
KR20240170272A (ko) * 2023-05-26 2024-12-03 삼성에스디아이 주식회사 금속 함유 포토레지스트 현상액 조성물, 및 이를 이용한 현상 단계를 포함하는 패턴 형성 방법
TW202538046A (zh) * 2023-10-25 2025-10-01 德商默克專利有限公司 電子機器製造水溶液、光阻圖案之製造方法及裝置之製造方法
WO2026046920A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026046961A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

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US20100028803A1 (en) * 2008-08-01 2010-02-04 Fujifilm Corporation Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern
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Also Published As

Publication number Publication date
JP2021081545A (ja) 2021-05-27
TW202600801A (zh) 2026-01-01
US20230045307A1 (en) 2023-02-09
KR102917530B1 (ko) 2026-01-23
WO2021099235A1 (en) 2021-05-27
JP7732976B2 (ja) 2025-09-02
KR20220104768A (ko) 2022-07-26
TW202124692A (zh) 2021-07-01
KR20260028049A (ko) 2026-03-03
JP2025114656A (ja) 2025-08-05
CN114730144A (zh) 2022-07-08
EP4062235A1 (en) 2022-09-28
JP2023502837A (ja) 2023-01-26

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