CN114730144A - 抗蚀图案间的置换液、以及使用其的抗蚀图案的制造方法 - Google Patents

抗蚀图案间的置换液、以及使用其的抗蚀图案的制造方法 Download PDF

Info

Publication number
CN114730144A
CN114730144A CN202080079209.5A CN202080079209A CN114730144A CN 114730144 A CN114730144 A CN 114730144A CN 202080079209 A CN202080079209 A CN 202080079209A CN 114730144 A CN114730144 A CN 114730144A
Authority
CN
China
Prior art keywords
resist
resist pattern
replacement liquid
resist patterns
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080079209.5A
Other languages
English (en)
Chinese (zh)
Inventor
山本和磨
绢田贵史
长原达郎
石井牧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of CN114730144A publication Critical patent/CN114730144A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202080079209.5A 2019-11-18 2020-11-16 抗蚀图案间的置换液、以及使用其的抗蚀图案的制造方法 Pending CN114730144A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-207844 2019-11-18
JP2019207844A JP2021081545A (ja) 2019-11-18 2019-11-18 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法
PCT/EP2020/082179 WO2021099235A1 (en) 2019-11-18 2020-11-16 Replacement liquid of liquid filling between resist patterns, and method for producing resist patterns using the same

Publications (1)

Publication Number Publication Date
CN114730144A true CN114730144A (zh) 2022-07-08

Family

ID=73455692

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080079209.5A Pending CN114730144A (zh) 2019-11-18 2020-11-16 抗蚀图案间的置换液、以及使用其的抗蚀图案的制造方法

Country Status (7)

Country Link
US (1) US20230045307A1 (https=)
EP (1) EP4062235A1 (https=)
JP (3) JP2021081545A (https=)
KR (2) KR20260028049A (https=)
CN (1) CN114730144A (https=)
TW (2) TWI887299B (https=)
WO (1) WO2021099235A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022175281A (ja) 2021-05-13 2022-11-25 トヨタ自動車株式会社 提案システムおよび提案方法
WO2024141355A1 (en) * 2022-12-26 2024-07-04 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
EP4649359A1 (en) * 2023-01-13 2025-11-19 Merck Patent GmbH Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
KR20240170272A (ko) * 2023-05-26 2024-12-03 삼성에스디아이 주식회사 금속 함유 포토레지스트 현상액 조성물, 및 이를 이용한 현상 단계를 포함하는 패턴 형성 방법
TW202538046A (zh) * 2023-10-25 2025-10-01 德商默克專利有限公司 電子機器製造水溶液、光阻圖案之製造方法及裝置之製造方法
WO2026046920A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026046961A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050284502A1 (en) * 2004-06-25 2005-12-29 Shin-Etsu Chemical Co., Ltd. Rinse and resist patterning process using the same
CN1947065A (zh) * 2004-04-23 2007-04-11 东京应化工业株式会社 抗蚀图案的形成方法及复合冲洗液
CN101010640A (zh) * 2004-09-01 2007-08-01 东京应化工业株式会社 光蚀刻用显影液组合物与抗蚀图案的形成方法
US20130280913A1 (en) * 2010-12-09 2013-10-24 Nissan Chemical Industries, Ltd. Composition for forming a resist underlayer film including hydroxyl group-containing carbazole novolac resin

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19822441A1 (de) * 1997-06-24 1999-01-28 Heidelberger Druckmasch Ag Druckformreinigungsverfahren
JP4493393B2 (ja) * 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
WO2007080726A1 (ja) * 2006-01-11 2007-07-19 Tokyo Ohka Kogyo Co., Ltd. リソグラフィー用洗浄剤及びそれを用いたレジストパターン形成方法
US20100028803A1 (en) * 2008-08-01 2010-02-04 Fujifilm Corporation Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern
JP5624753B2 (ja) * 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法
JP5705607B2 (ja) * 2011-03-23 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
EP3208659A1 (en) 2014-10-14 2017-08-23 AZ Electronic Materials (Luxembourg) S.à.r.l. Composition for resist patterning and method for forming pattern using same
JP6455397B2 (ja) * 2014-11-27 2019-01-23 信越化学工業株式会社 パターン形成用リンス溶液及びパターン形成方法
JP6428568B2 (ja) * 2014-11-27 2018-11-28 信越化学工業株式会社 パターン形成用リンス溶液及びパターン形成方法
JP6646073B2 (ja) * 2016-01-22 2020-02-14 富士フイルム株式会社 処理液
TWI717526B (zh) * 2016-06-20 2021-02-01 盧森堡商Ａｚ電子材料盧森堡有限公司 清洗組成物、形成光阻圖案之方法及製造半導體裝置之方法
JP6759174B2 (ja) * 2016-11-07 2020-09-23 富士フイルム株式会社 処理液及びパターン形成方法
CN110023841B (zh) 2016-11-25 2023-05-30 默克专利有限公司 光刻组合物、形成抗蚀图案的方法和制造半导体器件的方法
JP2018127513A (ja) * 2017-02-06 2018-08-16 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物、およびその使用

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1947065A (zh) * 2004-04-23 2007-04-11 东京应化工业株式会社 抗蚀图案的形成方法及复合冲洗液
US20050284502A1 (en) * 2004-06-25 2005-12-29 Shin-Etsu Chemical Co., Ltd. Rinse and resist patterning process using the same
CN101010640A (zh) * 2004-09-01 2007-08-01 东京应化工业株式会社 光蚀刻用显影液组合物与抗蚀图案的形成方法
US20130280913A1 (en) * 2010-12-09 2013-10-24 Nissan Chemical Industries, Ltd. Composition for forming a resist underlayer film including hydroxyl group-containing carbazole novolac resin

Also Published As

Publication number Publication date
JP2021081545A (ja) 2021-05-27
TW202600801A (zh) 2026-01-01
US20230045307A1 (en) 2023-02-09
KR102917530B1 (ko) 2026-01-23
WO2021099235A1 (en) 2021-05-27
JP7732976B2 (ja) 2025-09-02
KR20220104768A (ko) 2022-07-26
TW202124692A (zh) 2021-07-01
KR20260028049A (ko) 2026-03-03
TWI887299B (zh) 2025-06-21
JP2025114656A (ja) 2025-08-05
EP4062235A1 (en) 2022-09-28
JP2023502837A (ja) 2023-01-26

Similar Documents

Publication Publication Date Title
CN114730144A (zh) 抗蚀图案间的置换液、以及使用其的抗蚀图案的制造方法
KR101873727B1 (ko) 미세 레지스트 패턴 형성용 조성물 및 이를 사용한 패턴 형성 방법
JP6106990B2 (ja) リソグラフィ用リンス剤、レジストパターンの形成方法、及び半導体装置の製造方法
JP2022096214A (ja) 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法
CN109313398A (zh) 冲洗组合物、形成抗蚀剂图案的方法以及半导体器件的制备方法
JP2023519537A (ja) 電子機器製造水溶液、レジストパターンの製造方法およびデバイスの製造方法
WO2014132992A1 (ja) 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
TWI611274B (zh) 用於抗圖案崩壞處理之包含雙子型添加劑之組成物
TW201807513A (zh) 間隙塡充組成物及使用低分子化合物之圖案形成方法
CN1947065B (zh) 抗蚀图案的形成方法及复合冲洗液
US8748077B2 (en) Resist pattern improving material, method for forming resist pattern, method for producing semiconductor device, and semiconductor device
TW202538046A (zh) 電子機器製造水溶液、光阻圖案之製造方法及裝置之製造方法
CN104471487B (zh) 用于制造集成电路装置、光学装置、微机械及机械精密装置的组合物
CN100461005C (zh) 防止显影缺陷的方法及用于该方法的组合物
CN112912799A (zh) 半导体水溶性组合物及其使用
CN120457392A (zh) 制造电子器件的水溶液、制造抗蚀剂图案的方法以及制造器件的方法
KR20250137630A (ko) 전자 기기 제조 수용액, 레지스트 패턴의 제조 방법 및 디바이스의 제조 방법
TW202447344A (zh) 厚膜化組成物、經厚膜化之光阻圖案之製造方法、及加工基板之製造方法
JPH07181684A (ja) 反射防止膜組成物及びこれを用いたパタンの製造法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination