KR20250138820A - 패턴 형성 방법, 레지스트 재료, 및 패턴 형성 장치 - Google Patents

패턴 형성 방법, 레지스트 재료, 및 패턴 형성 장치

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Publication number
KR20250138820A
KR20250138820A KR1020257029838A KR20257029838A KR20250138820A KR 20250138820 A KR20250138820 A KR 20250138820A KR 1020257029838 A KR1020257029838 A KR 1020257029838A KR 20257029838 A KR20257029838 A KR 20257029838A KR 20250138820 A KR20250138820 A KR 20250138820A
Authority
KR
South Korea
Prior art keywords
group
substituent
alkyl group
atom
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257029838A
Other languages
English (en)
Korean (ko)
Inventor
카즈요 모리타
키미코 핫토리
Original Assignee
오지 홀딩스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오지 홀딩스 가부시키가이샤 filed Critical 오지 홀딩스 가부시키가이샤
Publication of KR20250138820A publication Critical patent/KR20250138820A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F20/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020257029838A 2019-07-02 2020-06-30 패턴 형성 방법, 레지스트 재료, 및 패턴 형성 장치 Pending KR20250138820A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2019-123880 2019-07-02
JP2019123880 2019-07-02
KR1020227001581A KR20220029663A (ko) 2019-07-02 2020-06-30 패턴 형성 방법, 레지스트 재료, 및 패턴 형성 장치
PCT/JP2020/025633 WO2021002351A1 (ja) 2019-07-02 2020-06-30 パターン形成方法、レジスト材料及びパターン形成装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020227001581A Division KR20220029663A (ko) 2019-07-02 2020-06-30 패턴 형성 방법, 레지스트 재료, 및 패턴 형성 장치

Publications (1)

Publication Number Publication Date
KR20250138820A true KR20250138820A (ko) 2025-09-22

Family

ID=74100686

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020257029838A Pending KR20250138820A (ko) 2019-07-02 2020-06-30 패턴 형성 방법, 레지스트 재료, 및 패턴 형성 장치
KR1020227001581A Pending KR20220029663A (ko) 2019-07-02 2020-06-30 패턴 형성 방법, 레지스트 재료, 및 패턴 형성 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020227001581A Pending KR20220029663A (ko) 2019-07-02 2020-06-30 패턴 형성 방법, 레지스트 재료, 및 패턴 형성 장치

Country Status (5)

Country Link
US (1) US12449737B2 (https=)
JP (2) JP7683479B2 (https=)
KR (2) KR20250138820A (https=)
TW (2) TWI897866B (https=)
WO (1) WO2021002351A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7213642B2 (ja) * 2018-09-05 2023-01-27 東京エレクトロン株式会社 レジスト膜の製造方法
WO2023172042A1 (ko) 2022-03-08 2023-09-14 주식회사 엘지에너지솔루션 리튬 이차전지용 전해액 첨가제 및 이를 포함하는 리튬 이차전지용 비수 전해액 및 리튬 이차전지
JPWO2023181950A1 (https=) * 2022-03-23 2023-09-28
US20240272552A1 (en) * 2023-02-10 2024-08-15 Applied Materials, Inc. Preferential infiltration in lithographic process flow for euv car resist
CN116299794A (zh) * 2023-02-24 2023-06-23 宁波大学 一种全硫系玻璃中红外超构透镜的制备方法及结构
WO2025005020A1 (ja) * 2023-06-30 2025-01-02 学校法人 関西大学 リソグラフィー膜形成組成物、リソグラフィー下層膜及びレジストパターン形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63137227A (ja) 1986-11-29 1988-06-09 Fujitsu Ltd 電子線ポジレジスト
JP2019500490A (ja) 2015-10-13 2019-01-10 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成
JP2019053228A (ja) 2017-09-15 2019-04-04 東芝メモリ株式会社 パターン形成方法及びパターン形成材料

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4981770A (en) 1989-07-28 1991-01-01 At&T Bell Laboratories Process for fabrication of device
JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
JP5708522B2 (ja) 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP5807552B2 (ja) 2012-01-13 2015-11-10 信越化学工業株式会社 パターン形成方法及びレジスト組成物
KR20140021979A (ko) 2012-08-13 2014-02-21 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 Ald/cvd 공정에서 gst 필름을 위한 전구체
JP6119544B2 (ja) 2013-10-04 2017-04-26 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
EP3114174B1 (de) 2014-03-04 2017-11-29 Covestro Deutschland AG Mehrschichtaufbau mit gutem uv- und kratzschutz
US20160230284A1 (en) 2015-02-10 2016-08-11 Arcanum Alloy Design, Inc. Methods and systems for slurry coating
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
EP3654102A4 (en) 2017-07-13 2021-04-14 Oji Holdings Corporation COMPOSITION FOR THE FORMING OF UNDERLAYER FILMS, PATTERN FORMATION PROCESS AND COPOLYMER FOR FORMING AN UNDERLAYMENT FILM USED FOR THE FORMATION OF PATTERNS
JP6814116B2 (ja) 2017-09-13 2021-01-13 キオクシア株式会社 半導体装置の製造方法および半導体製造装置
US11487205B2 (en) 2017-11-17 2022-11-01 Mitsui Chemicals, Inc. Semiconductor element intermediate, composition for forming metal-containing film, method of producing semiconductor element intermediate, and method of producing semiconductor element
US10845704B2 (en) * 2018-10-30 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet photolithography method with infiltration for enhanced sensitivity and etch resistance
KR20250005553A (ko) * 2019-07-02 2025-01-09 오지 홀딩스 가부시키가이샤 레지스트 재료 및 패턴 형성 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63137227A (ja) 1986-11-29 1988-06-09 Fujitsu Ltd 電子線ポジレジスト
JP2019500490A (ja) 2015-10-13 2019-01-10 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成
JP2019053228A (ja) 2017-09-15 2019-04-04 東芝メモリ株式会社 パターン形成方法及びパターン形成材料

Also Published As

Publication number Publication date
KR20220029663A (ko) 2022-03-08
TW202446812A (zh) 2024-12-01
JPWO2021002351A1 (https=) 2021-01-07
WO2021002351A1 (ja) 2021-01-07
US20220365448A1 (en) 2022-11-17
TW202110913A (zh) 2021-03-16
JP7683479B2 (ja) 2025-05-27
TWI897866B (zh) 2025-09-21
TWI898779B (zh) 2025-09-21
JP2025061106A (ja) 2025-04-10
US12449737B2 (en) 2025-10-21

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