TWI897866B - 圖案形成方法、抗蝕劑材料及圖案形成裝置 - Google Patents

圖案形成方法、抗蝕劑材料及圖案形成裝置

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Publication number
TWI897866B
TWI897866B TW109122189A TW109122189A TWI897866B TW I897866 B TWI897866 B TW I897866B TW 109122189 A TW109122189 A TW 109122189A TW 109122189 A TW109122189 A TW 109122189A TW I897866 B TWI897866 B TW I897866B
Authority
TW
Taiwan
Prior art keywords
group
substituted
alkyl group
atom
etching
Prior art date
Application number
TW109122189A
Other languages
English (en)
Chinese (zh)
Other versions
TW202110913A (zh
Inventor
森田和代
服部貴美子
Original Assignee
日商王子控股股份有限公司
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Publication of TW202110913A publication Critical patent/TW202110913A/zh
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Publication of TWI897866B publication Critical patent/TWI897866B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F20/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW109122189A 2019-07-02 2020-07-01 圖案形成方法、抗蝕劑材料及圖案形成裝置 TWI897866B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019123880 2019-07-02
JP2019-123880 2019-07-02

Publications (2)

Publication Number Publication Date
TW202110913A TW202110913A (zh) 2021-03-16
TWI897866B true TWI897866B (zh) 2025-09-21

Family

ID=74100686

Family Applications (2)

Application Number Title Priority Date Filing Date
TW109122189A TWI897866B (zh) 2019-07-02 2020-07-01 圖案形成方法、抗蝕劑材料及圖案形成裝置
TW113130092A TWI898779B (zh) 2019-07-02 2020-07-01 金屬氣體材料之使用

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW113130092A TWI898779B (zh) 2019-07-02 2020-07-01 金屬氣體材料之使用

Country Status (5)

Country Link
US (1) US12449737B2 (https=)
JP (2) JP7683479B2 (https=)
KR (2) KR20250138820A (https=)
TW (2) TWI897866B (https=)
WO (1) WO2021002351A1 (https=)

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JP7213642B2 (ja) * 2018-09-05 2023-01-27 東京エレクトロン株式会社 レジスト膜の製造方法
WO2023172042A1 (ko) 2022-03-08 2023-09-14 주식회사 엘지에너지솔루션 리튬 이차전지용 전해액 첨가제 및 이를 포함하는 리튬 이차전지용 비수 전해액 및 리튬 이차전지
JPWO2023181950A1 (https=) * 2022-03-23 2023-09-28
US20240272552A1 (en) * 2023-02-10 2024-08-15 Applied Materials, Inc. Preferential infiltration in lithographic process flow for euv car resist
CN116299794A (zh) * 2023-02-24 2023-06-23 宁波大学 一种全硫系玻璃中红外超构透镜的制备方法及结构
WO2025005020A1 (ja) * 2023-06-30 2025-01-02 学校法人 関西大学 リソグラフィー膜形成組成物、リソグラフィー下層膜及びレジストパターン形成方法

Citations (7)

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US4981770A (en) * 1989-07-28 1991-01-01 At&T Bell Laboratories Process for fabrication of device
TW201241555A (en) * 2011-02-15 2012-10-16 Shinetsu Chemical Co Resist composition and patterning process
TW201406984A (zh) * 2012-08-13 2014-02-16 氣體產品及化學品股份公司 用於ａｌｄ／ｃｖｄ方法的ｇｓｔ膜前驅物
TW201530254A (zh) * 2013-10-04 2015-08-01 信越化學工業股份有限公司 光阻材料及利用此之圖案形成方法
TW201708573A (zh) * 2015-02-10 2017-03-01 奧坎納合金設計有限公司 漿液塗布之方法與系統
TW201816163A (zh) * 2016-07-08 2018-05-01 Ａｓｍ智慧財產控股公司 用於原子層沉積之有機反應物
TW201908350A (zh) * 2017-07-13 2019-03-01 日商王子控股股份有限公司 形成下層膜之組成物、圖案形成方法及形成圖案之下層膜形成用共聚物

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JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
JP5807552B2 (ja) 2012-01-13 2015-11-10 信越化学工業株式会社 パターン形成方法及びレジスト組成物
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JP6814116B2 (ja) 2017-09-13 2021-01-13 キオクシア株式会社 半導体装置の製造方法および半導体製造装置
JP2019053228A (ja) 2017-09-15 2019-04-04 東芝メモリ株式会社 パターン形成方法及びパターン形成材料
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Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4981770A (en) * 1989-07-28 1991-01-01 At&T Bell Laboratories Process for fabrication of device
TW201241555A (en) * 2011-02-15 2012-10-16 Shinetsu Chemical Co Resist composition and patterning process
TW201406984A (zh) * 2012-08-13 2014-02-16 氣體產品及化學品股份公司 用於ａｌｄ／ｃｖｄ方法的ｇｓｔ膜前驅物
TW201530254A (zh) * 2013-10-04 2015-08-01 信越化學工業股份有限公司 光阻材料及利用此之圖案形成方法
TW201708573A (zh) * 2015-02-10 2017-03-01 奧坎納合金設計有限公司 漿液塗布之方法與系統
TW201816163A (zh) * 2016-07-08 2018-05-01 Ａｓｍ智慧財產控股公司 用於原子層沉積之有機反應物
TW201908350A (zh) * 2017-07-13 2019-03-01 日商王子控股股份有限公司 形成下層膜之組成物、圖案形成方法及形成圖案之下層膜形成用共聚物

Also Published As

Publication number Publication date
KR20220029663A (ko) 2022-03-08
TW202446812A (zh) 2024-12-01
JPWO2021002351A1 (https=) 2021-01-07
WO2021002351A1 (ja) 2021-01-07
US20220365448A1 (en) 2022-11-17
KR20250138820A (ko) 2025-09-22
TW202110913A (zh) 2021-03-16
JP7683479B2 (ja) 2025-05-27
TWI898779B (zh) 2025-09-21
JP2025061106A (ja) 2025-04-10
US12449737B2 (en) 2025-10-21

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