JPWO2021002351A1 - - Google Patents
Info
- Publication number
- JPWO2021002351A1 JPWO2021002351A1 JP2021530032A JP2021530032A JPWO2021002351A1 JP WO2021002351 A1 JPWO2021002351 A1 JP WO2021002351A1 JP 2021530032 A JP2021530032 A JP 2021530032A JP 2021530032 A JP2021530032 A JP 2021530032A JP WO2021002351 A1 JPWO2021002351 A1 JP WO2021002351A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F20/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
- G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025002812A JP2025061106A (ja) | 2019-07-02 | 2025-01-08 | パターン形成方法、レジスト材料及びパターン形成装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019123880 | 2019-07-02 | ||
| JP2019123880 | 2019-07-02 | ||
| PCT/JP2020/025633 WO2021002351A1 (ja) | 2019-07-02 | 2020-06-30 | パターン形成方法、レジスト材料及びパターン形成装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025002812A Division JP2025061106A (ja) | 2019-07-02 | 2025-01-08 | パターン形成方法、レジスト材料及びパターン形成装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021002351A1 true JPWO2021002351A1 (https=) | 2021-01-07 |
| JPWO2021002351A5 JPWO2021002351A5 (https=) | 2022-03-29 |
| JP7683479B2 JP7683479B2 (ja) | 2025-05-27 |
Family
ID=74100686
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021530032A Active JP7683479B2 (ja) | 2019-07-02 | 2020-06-30 | パターン形成方法、レジスト材料及びパターン形成装置 |
| JP2025002812A Pending JP2025061106A (ja) | 2019-07-02 | 2025-01-08 | パターン形成方法、レジスト材料及びパターン形成装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025002812A Pending JP2025061106A (ja) | 2019-07-02 | 2025-01-08 | パターン形成方法、レジスト材料及びパターン形成装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12449737B2 (https=) |
| JP (2) | JP7683479B2 (https=) |
| KR (2) | KR20250138820A (https=) |
| TW (2) | TWI897866B (https=) |
| WO (1) | WO2021002351A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7213642B2 (ja) * | 2018-09-05 | 2023-01-27 | 東京エレクトロン株式会社 | レジスト膜の製造方法 |
| WO2023172042A1 (ko) | 2022-03-08 | 2023-09-14 | 주식회사 엘지에너지솔루션 | 리튬 이차전지용 전해액 첨가제 및 이를 포함하는 리튬 이차전지용 비수 전해액 및 리튬 이차전지 |
| JPWO2023181950A1 (https=) * | 2022-03-23 | 2023-09-28 | ||
| US20240272552A1 (en) * | 2023-02-10 | 2024-08-15 | Applied Materials, Inc. | Preferential infiltration in lithographic process flow for euv car resist |
| CN116299794A (zh) * | 2023-02-24 | 2023-06-23 | 宁波大学 | 一种全硫系玻璃中红外超构透镜的制备方法及结构 |
| WO2025005020A1 (ja) * | 2023-06-30 | 2025-01-02 | 学校法人 関西大学 | リソグラフィー膜形成組成物、リソグラフィー下層膜及びレジストパターン形成方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4981770A (en) * | 1989-07-28 | 1991-01-01 | At&T Bell Laboratories | Process for fabrication of device |
| JP2012113303A (ja) * | 2010-11-15 | 2012-06-14 | Rohm & Haas Electronic Materials Llc | 糖成分を含む組成物およびフォトリソグラフィ方法 |
| JP2013145255A (ja) * | 2012-01-13 | 2013-07-25 | Shin Etsu Chem Co Ltd | パターン形成方法及びレジスト組成物 |
| WO2019012716A1 (ja) * | 2017-07-13 | 2019-01-17 | 王子ホールディングス株式会社 | 下層膜形成組成物、パターン形成方法及びパターン形成下層膜形成用コポリマー |
| WO2019098208A1 (ja) * | 2017-11-17 | 2019-05-23 | 三井化学株式会社 | 半導体素子中間体、金属含有膜形成用組成物、半導体素子中間体の製造方法、半導体素子の製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH083636B2 (ja) | 1986-11-29 | 1996-01-17 | 富士通株式会社 | 電子線ポジレジスト |
| JP5708522B2 (ja) | 2011-02-15 | 2015-04-30 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
| KR20140021979A (ko) | 2012-08-13 | 2014-02-21 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | Ald/cvd 공정에서 gst 필름을 위한 전구체 |
| JP6119544B2 (ja) | 2013-10-04 | 2017-04-26 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
| EP3114174B1 (de) | 2014-03-04 | 2017-11-29 | Covestro Deutschland AG | Mehrschichtaufbau mit gutem uv- und kratzschutz |
| US20160230284A1 (en) | 2015-02-10 | 2016-08-11 | Arcanum Alloy Design, Inc. | Methods and systems for slurry coating |
| KR102508142B1 (ko) | 2015-10-13 | 2023-03-08 | 인프리아 코포레이션 | 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝 |
| US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
| JP6814116B2 (ja) | 2017-09-13 | 2021-01-13 | キオクシア株式会社 | 半導体装置の製造方法および半導体製造装置 |
| JP2019053228A (ja) | 2017-09-15 | 2019-04-04 | 東芝メモリ株式会社 | パターン形成方法及びパターン形成材料 |
| US10845704B2 (en) * | 2018-10-30 | 2020-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet photolithography method with infiltration for enhanced sensitivity and etch resistance |
| KR20250005553A (ko) * | 2019-07-02 | 2025-01-09 | 오지 홀딩스 가부시키가이샤 | 레지스트 재료 및 패턴 형성 방법 |
-
2020
- 2020-06-30 KR KR1020257029838A patent/KR20250138820A/ko active Pending
- 2020-06-30 JP JP2021530032A patent/JP7683479B2/ja active Active
- 2020-06-30 WO PCT/JP2020/025633 patent/WO2021002351A1/ja not_active Ceased
- 2020-06-30 KR KR1020227001581A patent/KR20220029663A/ko active Pending
- 2020-06-30 US US17/623,979 patent/US12449737B2/en active Active
- 2020-07-01 TW TW109122189A patent/TWI897866B/zh active
- 2020-07-01 TW TW113130092A patent/TWI898779B/zh active
-
2025
- 2025-01-08 JP JP2025002812A patent/JP2025061106A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4981770A (en) * | 1989-07-28 | 1991-01-01 | At&T Bell Laboratories | Process for fabrication of device |
| JP2012113303A (ja) * | 2010-11-15 | 2012-06-14 | Rohm & Haas Electronic Materials Llc | 糖成分を含む組成物およびフォトリソグラフィ方法 |
| JP2013145255A (ja) * | 2012-01-13 | 2013-07-25 | Shin Etsu Chem Co Ltd | パターン形成方法及びレジスト組成物 |
| WO2019012716A1 (ja) * | 2017-07-13 | 2019-01-17 | 王子ホールディングス株式会社 | 下層膜形成組成物、パターン形成方法及びパターン形成下層膜形成用コポリマー |
| WO2019098208A1 (ja) * | 2017-11-17 | 2019-05-23 | 三井化学株式会社 | 半導体素子中間体、金属含有膜形成用組成物、半導体素子中間体の製造方法、半導体素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20220029663A (ko) | 2022-03-08 |
| TW202446812A (zh) | 2024-12-01 |
| WO2021002351A1 (ja) | 2021-01-07 |
| US20220365448A1 (en) | 2022-11-17 |
| KR20250138820A (ko) | 2025-09-22 |
| TW202110913A (zh) | 2021-03-16 |
| JP7683479B2 (ja) | 2025-05-27 |
| TWI897866B (zh) | 2025-09-21 |
| TWI898779B (zh) | 2025-09-21 |
| JP2025061106A (ja) | 2025-04-10 |
| US12449737B2 (en) | 2025-10-21 |
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