KR20250024132A - 표시 장치, 표시 모듈, 및 전자 기기 - Google Patents

표시 장치, 표시 모듈, 및 전자 기기 Download PDF

Info

Publication number
KR20250024132A
KR20250024132A KR1020257004409A KR20257004409A KR20250024132A KR 20250024132 A KR20250024132 A KR 20250024132A KR 1020257004409 A KR1020257004409 A KR 1020257004409A KR 20257004409 A KR20257004409 A KR 20257004409A KR 20250024132 A KR20250024132 A KR 20250024132A
Authority
KR
South Korea
Prior art keywords
light
conductive layer
electrode
emitting diode
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257004409A
Other languages
English (en)
Korean (ko)
Inventor
가즈노리 와타나베
고지 구수노키
다이키 노나카
히로키 아다치
고이치 다케시마
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20250024132A publication Critical patent/KR20250024132A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H01L25/0753—
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H01L25/13—
    • H01L25/167—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/20—Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group H10H20/00
    • H10H29/24—Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group H10H20/00 comprising multiple light-emitting semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/39—Connection of the pixel electrodes to the driving transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/49—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Thin Film Transistor (AREA)
  • Control Of El Displays (AREA)
  • Led Devices (AREA)
KR1020257004409A 2018-09-07 2019-08-26 표시 장치, 표시 모듈, 및 전자 기기 Pending KR20250024132A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018167554 2018-09-07
JPJP-P-2018-167554 2018-09-07
KR1020217006677A KR102768423B1 (ko) 2018-09-07 2019-08-26 표시 장치, 표시 모듈, 및 전자 기기
PCT/IB2019/057136 WO2020049397A1 (ja) 2018-09-07 2019-08-26 表示装置、表示モジュール、及び電子機器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020217006677A Division KR102768423B1 (ko) 2018-09-07 2019-08-26 표시 장치, 표시 모듈, 및 전자 기기

Publications (1)

Publication Number Publication Date
KR20250024132A true KR20250024132A (ko) 2025-02-18

Family

ID=69721815

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020257004409A Pending KR20250024132A (ko) 2018-09-07 2019-08-26 표시 장치, 표시 모듈, 및 전자 기기
KR1020217006677A Active KR102768423B1 (ko) 2018-09-07 2019-08-26 표시 장치, 표시 모듈, 및 전자 기기

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020217006677A Active KR102768423B1 (ko) 2018-09-07 2019-08-26 표시 장치, 표시 모듈, 및 전자 기기

Country Status (6)

Country Link
US (3) US12033987B2 (https=)
JP (3) JP7313358B2 (https=)
KR (2) KR20250024132A (https=)
CN (2) CN117316973A (https=)
TW (2) TWI846725B (https=)
WO (1) WO2020049397A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101422362B1 (ko) 2009-07-10 2014-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 패널 및 전자 기기
WO2019230229A1 (ja) 2018-05-31 2019-12-05 株式会社ジャパンディスプレイ 表示装置及びアレイ基板
US11710760B2 (en) 2019-06-21 2023-07-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and manufacturing method of display device
US12356779B2 (en) 2019-11-21 2025-07-08 Semiconductor Energy Laboratory Co., Ltd. Display unit, display module, electronic device, and method for manufacturing the display unit
FR3112902B1 (fr) * 2020-07-22 2022-12-16 Aledia Dispositif optoélectronique flexible et son procédé de fabrication
US11476299B2 (en) * 2020-08-31 2022-10-18 Hong Kong Beida Jade Bird Display Limited Double color micro LED display panel
CN112038375B (zh) * 2020-09-02 2022-11-15 昆山国显光电有限公司 显示面板和显示装置
WO2022069980A1 (ja) 2020-10-01 2022-04-07 株式会社半導体エネルギー研究所 表示装置および電子機器
WO2022137015A1 (ja) * 2020-12-25 2022-06-30 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び、電子機器
KR20230145080A (ko) 2021-02-12 2023-10-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 전자 기기
DE112022001242T5 (de) * 2021-02-26 2023-12-21 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung und elektronisches Gerät
KR20240007656A (ko) 2021-05-13 2024-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
KR20230013669A (ko) * 2021-07-15 2023-01-27 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN117693817A (zh) * 2021-07-22 2024-03-12 Lg电子株式会社 包括半导体发光器件的显示装置
US20250113691A1 (en) * 2021-07-27 2025-04-03 Signify Holding B.V. A white light emitting device
TWI861592B (zh) * 2022-01-17 2024-11-11 禾瑞亞科技股份有限公司 觸控結構及其觸控處理裝置、方法與電子系統
CN115083278B (zh) * 2022-06-24 2024-07-16 维沃移动通信有限公司 显示组件和电子设备
US20250098364A1 (en) * 2023-09-14 2025-03-20 Pixart Imaging Inc. Optical detection device
WO2025196181A1 (en) * 2024-03-20 2025-09-25 Ams-Osram International Gmbh Optoelectronic component and method of producing an optoelectronic component
CN119604106B (zh) * 2024-12-04 2026-01-16 华引芯（武汉）科技有限公司 光驱一体的叠层封装结构及其制备方法、灯板

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140367705A1 (en) 2013-06-17 2014-12-18 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW540251B (en) * 1999-09-24 2003-07-01 Semiconductor Energy Lab EL display device and method for driving the same
JP3973471B2 (ja) 2001-12-14 2007-09-12 三洋電機株式会社 デジタル駆動型表示装置
JP4120223B2 (ja) 2002-01-16 2008-07-16 ソニー株式会社 電子部品の製造方法、これを用いた画像表示装置
US7230374B2 (en) * 2003-09-22 2007-06-12 Samsung Sdi Co., Ltd. Full color organic light-emitting device having color modulation layer
KR101143005B1 (ko) * 2004-12-14 2012-05-08 삼성전자주식회사 마스크 및 이를 이용한 반도체 소자의 제조 방법 및 박막트랜지스터 표시판의 제조 방법
CN100448040C (zh) * 2006-01-12 2008-12-31 聚鼎科技股份有限公司 具有温度控制功能的发光二极管装置
US8405318B2 (en) 2007-02-28 2013-03-26 Koa Corporation Light-emitting component and its manufacturing method
JP5268267B2 (ja) 2007-02-28 2013-08-21 コーア株式会社 発光部品およびその製造法
CN101060152A (zh) 2007-05-15 2007-10-24 佛山市国星光电科技有限公司 一种片式发光二极管
JP5317712B2 (ja) * 2008-01-22 2013-10-16 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
KR101563527B1 (ko) 2008-09-19 2015-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
TWI406589B (zh) 2008-10-28 2013-08-21 Ind Tech Res Inst Ｌｅｄ光源控制電路與方法，及應用其之影像顯示裝置與照明設備
TWI389295B (zh) * 2009-02-18 2013-03-11 奇力光電科技股份有限公司 發光二極體光源模組
KR101422362B1 (ko) * 2009-07-10 2014-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 패널 및 전자 기기
KR101155903B1 (ko) * 2010-03-09 2012-06-21 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR102358737B1 (ko) 2011-10-18 2022-02-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US12176356B2 (en) 2011-10-18 2024-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and light-emitting element
US20150014738A1 (en) * 2012-02-21 2015-01-15 Peiching Ling Light emitting diode package and method of fabricating the same
US8803185B2 (en) * 2012-02-21 2014-08-12 Peiching Ling Light emitting diode package and method of fabricating the same
US9159700B2 (en) 2012-12-10 2015-10-13 LuxVue Technology Corporation Active matrix emissive micro LED display
US9153171B2 (en) 2012-12-17 2015-10-06 LuxVue Technology Corporation Smart pixel lighting and display microcontroller
JP6157178B2 (ja) 2013-04-01 2017-07-05 ソニーセミコンダクタソリューションズ株式会社 表示装置
TWI611582B (zh) * 2013-04-10 2018-01-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN203218328U (zh) * 2013-04-24 2013-09-25 佛山市国星光电股份有限公司 一种新型led器件及由其制造的led显示屏
US9318663B2 (en) * 2013-07-10 2016-04-19 Epistar Corporation Light-emitting element
JP2015023220A (ja) * 2013-07-22 2015-02-02 ローム株式会社 表示装置
US20150021634A1 (en) 2013-07-22 2015-01-22 Rohm Co., Ltd. Display unit using led light sources
JP6280710B2 (ja) * 2013-09-02 2018-02-14 新光電気工業株式会社 配線基板、発光装置及び配線基板の製造方法
WO2015083042A1 (ja) * 2013-12-03 2015-06-11 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP6402017B2 (ja) * 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
KR102116986B1 (ko) * 2014-02-17 2020-05-29 삼성전자 주식회사 발광 다이오드 패키지
US9831387B2 (en) * 2014-06-14 2017-11-28 Hiphoton Co., Ltd. Light engine array
US9231153B2 (en) 2014-05-30 2016-01-05 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
US9105813B1 (en) 2014-05-30 2015-08-11 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
TWI790965B (zh) * 2014-05-30 2023-01-21 日商半導體能源研究所股份有限公司 觸控面板
US9219197B1 (en) 2014-05-30 2015-12-22 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
US9590137B2 (en) 2014-05-30 2017-03-07 Mikro Mesa Technology Co., Ltd. Light-emitting diode
KR20250102133A (ko) 2014-05-30 2025-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 표시 장치, 및 전자 기기
US10158043B2 (en) 2014-05-30 2018-12-18 Mikro Mesa Technolgy Co., Ltd. Light-emitting diode and method for manufacturing the same
US9825202B2 (en) 2014-10-31 2017-11-21 eLux, Inc. Display with surface mount emissive elements
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI749726B (zh) 2015-03-09 2021-12-11 日商半導體能源研究所股份有限公司 發光元件、顯示裝置、電子裝置及照明設備
KR20160141301A (ko) * 2015-05-29 2016-12-08 삼성전자주식회사 반도체 발광 소자 패키지
CN104979326B (zh) * 2015-07-09 2017-12-05 深圳市晶泓科技有限公司 Led发光组件、led发光面板和led显示屏
US20170062749A1 (en) 2015-09-01 2017-03-02 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device
JP6415736B2 (ja) 2015-09-11 2018-10-31 シャープ株式会社 画像表示装置および画像表示素子の製造方法
US20170090246A1 (en) 2015-09-25 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US10573667B2 (en) 2015-12-11 2020-02-25 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2017115208A1 (en) 2015-12-28 2017-07-06 Semiconductor Energy Laboratory Co., Ltd. Device, television system, and electronic device
KR20170087091A (ko) 2016-01-19 2017-07-28 삼성디스플레이 주식회사 표시 장치
JP2017157724A (ja) 2016-03-02 2017-09-07 デクセリアルズ株式会社 表示装置及びその製造方法、並びに発光装置及びその製造方法
KR20180002123A (ko) 2016-06-28 2018-01-08 삼성디스플레이 주식회사 표시장치
CN109328378A (zh) 2016-06-29 2019-02-12 三菱电机株式会社 显示装置及显示装置的制造方法
US10332949B2 (en) 2016-07-06 2019-06-25 Seoul Semiconductor Co., Ltd. Display apparatus
KR101964934B1 (ko) 2016-07-29 2019-04-04 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR102513204B1 (ko) 2016-08-17 2023-03-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102651097B1 (ko) 2016-10-28 2024-03-22 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
JP2018077376A (ja) * 2016-11-10 2018-05-17 株式会社半導体エネルギー研究所 表示装置
JP7050460B2 (ja) * 2016-11-22 2022-04-08 株式会社半導体エネルギー研究所 表示装置
US10756118B2 (en) 2016-11-30 2020-08-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
KR102772357B1 (ko) 2016-12-20 2025-02-21 엘지디스플레이 주식회사 발광 다이오드 칩 및 이를 포함하는 발광 다이오드 디스플레이 장치
WO2018172881A1 (ja) 2017-03-24 2018-09-27 株式会社半導体エネルギー研究所 半導体装置、表示システム及び電子機器
KR102374754B1 (ko) * 2017-09-27 2022-03-15 엘지디스플레이 주식회사 터치 구조물을 포함하는 디스플레이 장치
TWI798308B (zh) 2017-12-25 2023-04-11 日商半導體能源研究所股份有限公司 顯示器及包括該顯示器的電子裝置
CN108538890A (zh) * 2018-04-20 2018-09-14 深圳市华星光电技术有限公司 一种有机发光显示装置
KR20210009326A (ko) 2018-05-17 2021-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2019220246A1 (ja) 2018-05-18 2019-11-21 株式会社半導体エネルギー研究所 表示装置、表示モジュール、電子機器、及び、表示装置の作製方法
US11908850B2 (en) 2018-09-05 2024-02-20 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and method for manufacturing display device
US11710760B2 (en) 2019-06-21 2023-07-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and manufacturing method of display device
CN110504282B (zh) * 2019-08-27 2021-11-23 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
KR102827179B1 (ko) * 2019-12-23 2025-07-01 삼성디스플레이 주식회사 표시 장치 및 제조 방법
KR102929690B1 (ko) * 2020-05-25 2026-02-20 삼성전자주식회사 발광 소자, 광원 모듈 및 발광 소자 제조 방법
US12148857B2 (en) * 2020-12-15 2024-11-19 Samsung Electronics Co., Ltd. Method of manufacturing micro-LED display
CN112669714B (zh) * 2020-12-22 2022-09-20 业成科技（成都）有限公司 发光二极体显示器及其制作方法
CN113160758B (zh) * 2021-03-03 2022-12-02 华源智信半导体(深圳)有限公司 直下式mini-LED背光模组及显示装置的亮度补偿方法和校正系统
US11961822B2 (en) * 2022-01-17 2024-04-16 Samsung Display Co., Ltd. Display device, and tiled display device including the display device
KR102950151B1 (ko) * 2022-01-21 2026-04-10 삼성디스플레이 주식회사 표시 장치 및 타일형 표시 장치
US20230238496A1 (en) * 2022-01-21 2023-07-27 Samsung Display Co., Ltd. Display device and tiled display device
KR102889726B1 (ko) * 2022-01-21 2025-11-24 삼성디스플레이 주식회사 표시 장치 및 이를 포함하는 타일형 표시 장치
US12588337B2 (en) * 2022-01-28 2026-03-24 Samsung Display Co., Ltd. Display device and tiled display device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140367705A1 (en) 2013-06-17 2014-12-18 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device

Also Published As

Publication number Publication date
WO2020049397A1 (ja) 2020-03-12
US20250157995A1 (en) 2025-05-15
US20240413130A1 (en) 2024-12-12
TW202437218A (zh) 2024-09-16
KR102768423B1 (ko) 2025-02-13
US20220005790A1 (en) 2022-01-06
CN112673411A (zh) 2021-04-16
US12033987B2 (en) 2024-07-09
JP7313358B2 (ja) 2023-07-24
JP7645313B2 (ja) 2025-03-13
KR20210043604A (ko) 2021-04-21
US12334480B2 (en) 2025-06-17
JP2023139062A (ja) 2023-10-03
CN112673411B (zh) 2023-10-10
TWI846725B (zh) 2024-07-01
CN117316973A (zh) 2023-12-29
TW202025113A (zh) 2020-07-01
JPWO2020049397A1 (ja) 2021-10-14
JP2025090639A (ja) 2025-06-17

Similar Documents

Publication Publication Date Title
KR102768423B1 (ko) 표시 장치, 표시 모듈, 및 전자 기기
JP7679531B2 (ja) 表示装置
JP7534190B2 (ja) 表示装置の作製方法
KR20210010520A (ko) 표시 장치, 표시 모듈, 전자 기기, 및 표시 장치의 제작 방법
JP7820076B2 (ja) 表示装置
JP7637078B2 (ja) 表示装置および電子機器
TWI914329B (zh) 顯示裝置以及電子裝置

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000