CN101060152A - 一种片式发光二极管 - Google Patents

一种片式发光二极管 Download PDF

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Publication number
CN101060152A
CN101060152A CNA2007100279927A CN200710027992A CN101060152A CN 101060152 A CN101060152 A CN 101060152A CN A2007100279927 A CNA2007100279927 A CN A2007100279927A CN 200710027992 A CN200710027992 A CN 200710027992A CN 101060152 A CN101060152 A CN 101060152A
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metal substrate
type led
flat type
led according
packing colloid
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余彬海
李军政
夏勋力
潘利兵
李绪锋
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Foshan NationStar Optoelectronics Co Ltd
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Foshan NationStar Optoelectronics Co Ltd
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Priority to CNA2007100279927A priority Critical patent/CN101060152A/zh
Priority to PCT/CN2007/002948 priority patent/WO2008138182A1/zh
Publication of CN101060152A publication Critical patent/CN101060152A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开了一种片式发光二极管，包括器件支架、管芯、粘合剂、键合线、封装胶体，其特征技术方案为该片式发光二极管采用金属基板作为器件支架，管芯通过粘合剂安放于金属基板上，键合线连接管芯电极与金属基板，封装胶体将管芯封装起来，本发明在已知片式发光二极管优良特性的基础上，进一步提高了产品发光亮度、提高器件本身的散热能力、节约生产成本，具有散热效果好、出光效率高、光电特性稳定、可承载电流大、生产成本低等优点，可应用于各种规格片式发光二极管产品的生产制造。

Description

一种片式发光二极管
技术领域
本发明涉及发光二极管领域，更具体地说是涉及一种片式发光二极管。
背景技术
随着LED生产技术的不断提高，LED应用范围不断扩大，使得LED的亮度及光电稳定特性要求不断提升。目前片式发光二极管生产技术已经相当成熟，如中国专利申请号为01131330.7，申请日为2002年04月10日，发明名称为片式发光二极管及其制造方法，包括具备安装在主印刷电路板的一个面一侧的底座，从上述底座延伸并且贯通设置在主印刷电路板上的孔而配置的本体部分，设置在该本体部分上而且在主印刷电路板的另一个面一侧发光的发光部分，在底座上设置与发光部分电连接的一对外部连接用电极，发光部分用树脂密封块密封。在把底座安装到主印刷电路板的背面一侧时，配置发光部分使得与配置在主印刷电路板上的液晶背照光的导光方向一致。片式发光二极管的制造方法是在一片集合电路基板上经过多个工序形成多个片式发光二极管，在最终的工序中分割集合电路基板使得制作一个个片式发光二极管。
当前提高亮度所采用的方法只能是改变发光二极管管芯和加大发光二极管输入电流，增加了生产成本，而发光二极管的散热问题无有效解决途径，并不能从根本上解决问题。
发明内容
本发明的目的就是为了解决现有技术之不足而提供的一种不仅散热效果好、出光效率高、光电特性稳定、可承载电流大，而且生产成本低的片式发光二极管。
本发明是采用如下技术解决方案来实现上述目的：一种片式发光二极管，包括器件支架、管芯、键合线、封装胶体，其特征在于，所述器件支架采用金属基板材料，金属基板分为相互绝缘的两部分形成两电极，管芯安放于金属基板上，键合线分别连接管芯电极与金属基板另一电极，封装胶体将管芯、键合线、金属基板的电极引脚封装起来，并将金属基板相互绝缘的两部分连接在一起。
作为上述方案的进一步说明，所述管芯通过粘合剂安放于金属基板上，金属基板采用铜基板。
所述粘合剂为导电胶、绝缘胶或辅助焊接材料。
所述金属基板上同一封装胶体内设有一个或多个管芯。
所述金属基板表面设置有具有反射性能的金属镀层。
所述金属镀层为银、钯或金。
所述封装胶体的封装上表面为平面型、凹透镜型或凸透镜型。
所述封装胶体为无色透明、散射胶或荧光胶。
所述同一封装胶体内的一个或多个管芯、键合线和金属基板构成一个单元，若干单元的金属基板为一个整体结构形成M行N列的金属基板组合单元阵列，其中M≥1，N≥1。
本发明采用上述技术解决方案所能达到的有益效果是：
1、本发明采用金属基板材料替代传统主印刷电路板作为主要器件支架，有效解决热老化衰减问题，克服了传统的采用印刷电路基板的观点；同时，由于金属基板表面采用高反射系数的银作为镀层，有效提高了器件的出光效率。
2、本发明将若干个管芯安放于金属基板上相应的位置，引线键合完成后用封装胶体将管芯封装起来，最后将整个金属基板分离为具有独立结构和电气特性的片式发光二极管，在保持传统片式发光二极管优良特性的基础上，进一步提高了产品发光亮度、提高器件本身的散热能力、节约生产成本，并可应用于各种片式发光二极管产品的生产制造，适用范围广。
附图说明
图1是本发明俯视结构图；
图2是本发明剖视图；
图3是本发明最终分离后的结构图；
图4是本发明实施中最终分离后的结构图。
附图标记说明：1、管芯2、键合引线3、封装胶体4、金属基板5、电极引脚
具体实施方式
如图1～4所示，本发明的片式发光二极管架包括管芯1、粘合剂、键合引线2、封装胶体3，采用金属基板4作为器件支架，本实施例采用铜基板，金属基板4通过蚀刻或冲切成型工艺制作成为具有电气连接的发光二极管支架，金属基板分为相互绝缘的两部分形成两电极，管芯安放于金属基板的腔体内，键合引线2分别连接管芯电极与金属基板另一部分电极，封装胶体将管芯1、键合引线2、金属基板的电极引脚5封装起来，并将金属基板间隔的两部分连接在一起。粘合剂为导电胶、绝缘胶或辅助焊接材料。封装胶体3的封装上表面为平面型、凹透镜型或凸透镜型，本实施例中，封装胶体1上表面形状为平面，金属基板4上同一封装胶体内的管芯数目为1～N个，其中N≥1。同一封装胶体内的一个或多个管芯、键合线和金属基板构成一个单元，若干单元的金属基板为一个整体结构形成M行N列的金属基板组合单元阵列，其中M≥1，N≥1。金属基板表面镀层为银、钯或金。封装胶体为无色透明、散射胶或荧光胶。
制造过程中，先将金属基板通过化学蚀刻方式加工成型，方便管芯安放，保证器件成型后具备独立结构和完整电气特性，主要工艺路线如下：
材料准备→制版→基板涂布感光油→曝光→腐蚀→清洗然后，将发光二极管芯片安放于金属基板指定位置，并将管芯电极用金线与电极引脚相连；然后，将引线键合完成的半制品进行封装，树脂固化成型；最后，将片式发光二极管金属基板组合分离为单个器件，对产品进行光电参数测试，分为不同等级，并对检验合格品进行包装入库。
另外，本发明片式发光二极管与传统片式发光二极管相比，亮度高，光电特性稳定，主要特性参数测试数据对比如下：
类别   亮度(20mA)     老化衰减(1000h) 可承载电流 热阻
  传统片式LED   80mcd     20％   25mA     75K/W
  本发明片式LED   140mcd     5％   40mA     40K/W
测试条件：Ta＝25℃ RH＝65％
如以上所述，仅是本发明的优选实例而已，并非用来限定本发明的范围，本领域技术人员还可做多种修改和变化，在不脱离发明的精神下，都在本发明所要求保护范围。

Claims (10)

1、一种片式发光二极管，包括器件支架、管芯、键合线、封装胶体，其特征在于，所述器件支架采用金属基板材料，金属基板分为相互绝缘的两部分形成两电极，管芯安放于金属基板上，键合线分别连接管芯电极与金属基板另一电极，封装胶体将管芯、键合线、金属基板的电极引脚封装起来，并将金属基板相互绝缘的两部分连接在一起。
2、根据权利要求1所述的一种片式发光二极管，其特征在于，所述管芯通过粘合剂安放于金属基板上。
3、根据权利要求2所述的一种片式发光二极管，其特征在于，所述粘合剂为导电胶、绝缘胶或辅助焊接材料。
4、根据权利要求1或2所述的一种片式发光二极管，其特征在于，所述金属基板上同一封装胶体内设有一个或多个管芯。
5、根据权利要求1或2所述的一种片式发光二极管，其特征在于，所述金属基板表面设置有具有反射性能的金属镀层。
6、根据权利要求5所述的一种片式发光二极管，其特征在于，所述金属镀层为银、钯或金。
7、根据权利要求1所述的一种片式发光二极管，其特征在于，所述封装胶体的封装上表面为平面型、凹透镜型或凸透镜型。
8、根据权利要求1所述的一种片式发光二极管，其特征在于，所述封装胶体为无色透明、散射胶或荧光胶。
10、根据权利要求4所述的一种片式发光二极管，其特征在于，同一封装胶体内的一个或多个管芯、键合线和金属基板构成一个单元，若干单元的金属基板为一个整体结构形成M行N列的金属基板组合单元阵列，其中M≥1，N≥1。
11、根据权利要求1所述的一种片式发光二极管，其特征在于，所述金属基板采用铜基板。
CNA2007100279927A 2007-05-15 2007-05-15 一种片式发光二极管 Pending CN101060152A (zh)

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PCT/CN2007/002948 WO2008138182A1 (fr) 2007-05-15 2007-10-15 Diode électroluminescente de type à puce

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012129822A1 (zh) * 2011-03-31 2012-10-04 锐迪科创微电子（北京）有限公司 带有绝缘体填充的阱结构的封装基板及其制造方法
CN103367622A (zh) * 2013-07-05 2013-10-23 江苏华英光宝科技股份有限公司 全角度发光led支架与包含该支架的led灯柱及其制备方法
CN112673411A (zh) * 2018-09-07 2021-04-16 株式会社半导体能源研究所 显示装置、显示模块及电子设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4215306B2 (ja) * 1998-08-27 2009-01-28 シチズン電子株式会社 半導体のパッケージおよびその製造方法
JP2003163378A (ja) * 2001-11-26 2003-06-06 Citizen Electronics Co Ltd 表面実装型発光ダイオード及びその製造方法
KR100593943B1 (ko) * 2005-04-30 2006-06-30 삼성전기주식회사 발광 다이오드 패키지의 제조 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012129822A1 (zh) * 2011-03-31 2012-10-04 锐迪科创微电子（北京）有限公司 带有绝缘体填充的阱结构的封装基板及其制造方法
CN103367622A (zh) * 2013-07-05 2013-10-23 江苏华英光宝科技股份有限公司 全角度发光led支架与包含该支架的led灯柱及其制备方法
CN112673411A (zh) * 2018-09-07 2021-04-16 株式会社半导体能源研究所 显示装置、显示模块及电子设备
CN112673411B (zh) * 2018-09-07 2023-10-10 株式会社半导体能源研究所 显示装置、显示模块及电子设备

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