CN104934517A - 一种低热阻贴片发光二极管封装结构及封装方法 - Google Patents
一种低热阻贴片发光二极管封装结构及封装方法 Download PDFInfo
- Publication number
- CN104934517A CN104934517A CN201510206231.2A CN201510206231A CN104934517A CN 104934517 A CN104934517 A CN 104934517A CN 201510206231 A CN201510206231 A CN 201510206231A CN 104934517 A CN104934517 A CN 104934517A
- Authority
- CN
- China
- Prior art keywords
- support
- led chip
- led
- packaging
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 241000218202 Coptis Species 0.000 claims abstract description 7
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 7
- 239000003292 glue Substances 0.000 claims abstract description 6
- 238000005520 cutting process Methods 0.000 claims abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 238000007723 die pressing method Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000008393 encapsulating agent Substances 0.000 claims 1
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 7
- 238000012858 packaging process Methods 0.000 description 5
- 238000010923 batch production Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
本发明公开了一种低热阻贴片发光二极管封装结构,包括铜底材的支架、封装胶、至少一个LED芯片、一条用于使得LED芯片与支架导通的金线;其中,LED芯片固定在支架上,金线键合在LED芯片和支架上,LED芯片的外层包覆有封装胶。本发明还公开了一种低热阻贴片发光二极管封装方法,包括如下步骤:A、提供铜底材的支架;B、将至少一个LED芯片通过固晶机固定到支架上;C、固晶后烘烤,烘烤条件为150℃2HRS;D、采用焊线机将金线键合到LED芯片和支架上,用来导通LED芯片和支架的连接;E、采用压模方式封胶后并切割、测试,完成低热阻贴片发光二极管封装的封装。本发明极大地降低了Chip LED热阻,提升Chip LED散热,降低LED光衰,提升LED寿命。
Description
技术领域
本发明涉及LED芯片封装技术领域,特别是一种低热阻贴片发光二极管封装结构及封装方法。
背景技术
贴片芯片Chip LED是较为标准化的贴片类LED,由于其标准化的特性,使得其便于大规模的生产和使用,广泛的应用于指示和显示领域。
目前Chip SMD发光二极管均采用在PCB板支架上固晶焊线,再压模封装、切割的封装方法。此封装方法虽然封装工艺简单,便于大规模批量生产,但是此种封装的LED采用PCB板支架,PCB的导热系数只能达到16.5W/℃K,造成此种封装的LED热阻较大,产品散热性能较差,产品光衰严重,只能用于封装功率较小的产品。
发明内容
本发明所要解决的技术问题是克服现有技术的不足而提供一种低热阻贴片发光二极管封装结构及封装方法,提升Chip LED散热,降低LED光衰,提升LED寿命。
本发明为解决上述技术问题采用以下技术方案:
根据本发明提出的一种低热阻贴片发光二极管封装结构,包括铜底材的支架、封装胶、至少一个LED芯片、一条用于使得LED芯片与支架导通的金线;其中,
LED芯片固定在支架上,金线键合在LED芯片和支架上,LED芯片的外层包覆有封装胶。
作为本发明所述的一种低热阻贴片发光二极管封装结构进一步优化方案,所述支架的厚度为0.15-0.5mm。
作为本发明所述的一种低热阻贴片发光二极管封装结构进一步优化方案,所述LED芯片是通过固晶机固定到支架上。
作为本发明所述的一种低热阻贴片发光二极管封装结构进一步优化方案,所述金线是通过焊线机键合在LED芯片和支架上。
作为本发明所述的一种低热阻贴片发光二极管封装结构进一步优化方案,所述支架的镀层为银或金或合金。
作为本发明所述的一种低热阻贴片发光二极管封装结构进一步优化方案,所述封装胶为纯树脂或硅胶。
基于一种低热阻贴片发光二极管封装结构的方法,包括如下步骤:
A、提供铜底材的支架;
B、将至少一个LED芯片通过固晶机固定到支架上;
C、固晶后烘烤,烘烤条件为150℃2HRS;
D、采用焊线机将金线键合到LED芯片和支架上,用来导通LED芯片和支架的连接;
E、采用压模方式封胶后并切割、测试,完成低热阻贴片发光二极管的封装。
本发明采用以上技术方案与现有技术相比,具有以下技术效果:
(1)使用铜底材支架替代传统PCB支架,降低了LED热阻,提升了LED散热性能;
(2)在良好的散热条件下使得Chip LED寿命得到保障;
(3)使得Chip LED可以完成中高功率的封装,提升Chip LED的亮度,拓展了Chip LED的应用领域,使得Chip LED应用到照明领域成为可能;
(4)封装工艺与传统工艺一致,适合于大规模批量生产。
附图说明
图1是本发明结构示意图。
图中的附图标记解释为:1-LED芯片,2-金线,3-封装胶,4-支架。
具体实施方式
下面结合附图对本发明的技术方案做进一步的详细说明:
如图1所示是本发明结构示意图,一种低热阻贴片发光二极管封装结构,包括铜底材的支架4、封装胶、至少一个LED芯片1、一条用于使得LED芯片与支架导通的金线2;其中,
LED芯片固定在支架上,金线键合在LED芯片和支架上,LED芯片的外层包覆有封装胶3。
所述支架的厚度为0.15-0.5mm。
所述LED芯片是通过固晶机固定到支架上。
所述金线是通过焊线机键合在LED芯片和支架上。
所述支架的镀层为银或金或合金。
所述封装胶为纯树脂或硅胶。
基于一种低热阻贴片发光二极管封装结构的方法,包括如下步骤:
A、提供铜底材的支架;
B、将至少一个LED芯片通过固晶机固定到支架上;
C、固晶后烘烤,烘烤条件为150℃2HRS;
D、采用焊线机将金线键合到LED芯片和支架上,用来导通LED芯片和支架的连接;
E、采用压模方式封胶后并切割、测试,完成低热阻贴片发光二极管的封装。
此种封装的Chip LED,与传统封装的Chip LED相比,封装工艺与传统封装一致,将传统的PCB支架替换为铜底材支架,PCB导热系数为16.5W/℃K,铜的导热系数为400W/℃K,极大的降低了LED热阻,提升LED散热性能。
本发明采用以上技术方案与现有技术相比,具有以下技术效果:
(1)使用铜底材支架替代传统PCB支架,降低了LED热阻,提升了LED散热性能;
(2)在良好的散热条件下使得Chip LED寿命得到保障;
(3)使得Chip LED可以完成中高功率的封装,提升Chip LED的亮度,拓展了Chip LED的应用领域,使得Chip LED应用到照明领域成为可能;
(4)封装工艺与传统工艺一致,适合于大规模批量生产。
显然,本发明的上述实施例仅仅是为清楚地说明本发明所作的举例,而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而这些属于本发明的实质精神所引伸出的显而易见的变化或变动仍属于本发明的保护范围。
Claims (7)
1.一种低热阻贴片发光二极管封装结构,其特征在于,包括铜底材的支架、封装胶、至少一个LED芯片、一条用于使得LED芯片与支架导通的金线;其中,
LED芯片固定在支架上,金线键合在LED芯片和支架上,LED芯片的外层包覆有封装胶。
2.根据权利要求1所述的一种低热阻贴片发光二极管封装结构,其特征在于,所述支架的厚度为0.15-0.5mm。
3.根据权利要求1所述的一种低热阻贴片发光二极管封装结构,其特征在于,所述LED芯片是通过固晶机固定到支架上。
4.根据权利要求1所述的一种低热阻贴片发光二极管封装结构,其特征在于,所述金线是通过焊线机键合在LED芯片和支架上。
5.根据权利要求1所述的一种低热阻贴片发光二极管封装结构,其特征在于,所述支架的镀层为银或金或合金。
6.根据权利要求1所述的一种低热阻贴片发光二极管封装结构,其特征在于,所述封装胶为纯树脂或硅胶。
7.基于权利要求1所述的一种低热阻贴片发光二极管封装方法,其特征在于,包括如下步骤:
A、提供铜底材的支架;
B、将至少一个LED芯片通过固晶机固定到支架上;
C、固晶后烘烤,烘烤条件为150℃2HRS;
D、采用焊线机将金线键合到LED芯片和支架上,用来导通LED芯片和支架的连接;
E、采用压模方式封胶后并切割、测试,完成低热阻贴片发光二极管的封装。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510206231.2A CN104934517A (zh) | 2015-04-28 | 2015-04-28 | 一种低热阻贴片发光二极管封装结构及封装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510206231.2A CN104934517A (zh) | 2015-04-28 | 2015-04-28 | 一种低热阻贴片发光二极管封装结构及封装方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104934517A true CN104934517A (zh) | 2015-09-23 |
Family
ID=54121591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510206231.2A Pending CN104934517A (zh) | 2015-04-28 | 2015-04-28 | 一种低热阻贴片发光二极管封装结构及封装方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104934517A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106252486A (zh) * | 2016-08-03 | 2016-12-21 | 中山市雄纳五金照明科技有限公司 | 一种led贴片灯的制作方法 |
CN106910721A (zh) * | 2017-03-08 | 2017-06-30 | 东莞市佳骏电子科技有限公司 | 一种二极管及其封装工艺流程 |
WO2020125262A1 (zh) * | 2018-12-17 | 2020-06-25 | 深圳市瑞丰光电子股份有限公司 | 一种led封装结构及led灯组件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202142577U (zh) * | 2011-06-21 | 2012-02-08 | 深圳市天电光电科技有限公司 | Led支架量产片、led支架单体及led封装结构 |
CN203312364U (zh) * | 2013-06-07 | 2013-11-27 | 深圳市晶台光电有限公司 | 一种方形陶瓷cob封装结构 |
CN204155958U (zh) * | 2014-10-27 | 2015-02-11 | 深圳市源磊科技有限公司 | 片上芯片封装光源 |
-
2015
- 2015-04-28 CN CN201510206231.2A patent/CN104934517A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202142577U (zh) * | 2011-06-21 | 2012-02-08 | 深圳市天电光电科技有限公司 | Led支架量产片、led支架单体及led封装结构 |
CN203312364U (zh) * | 2013-06-07 | 2013-11-27 | 深圳市晶台光电有限公司 | 一种方形陶瓷cob封装结构 |
CN204155958U (zh) * | 2014-10-27 | 2015-02-11 | 深圳市源磊科技有限公司 | 片上芯片封装光源 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106252486A (zh) * | 2016-08-03 | 2016-12-21 | 中山市雄纳五金照明科技有限公司 | 一种led贴片灯的制作方法 |
CN106910721A (zh) * | 2017-03-08 | 2017-06-30 | 东莞市佳骏电子科技有限公司 | 一种二极管及其封装工艺流程 |
WO2020125262A1 (zh) * | 2018-12-17 | 2020-06-25 | 深圳市瑞丰光电子股份有限公司 | 一种led封装结构及led灯组件 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN204130585U (zh) | 一种紫外led器件 | |
CN204577469U (zh) | 片式白光发光二极管 | |
CN201868429U (zh) | 一种内嵌式发光二极管封装结构 | |
CN104952864B (zh) | Led灯丝及其制造方法 | |
CN101276866B (zh) | 大功率led支架及利用该支架制造的大功率led | |
CN105390457A (zh) | 一种低成本、高可靠性csp封装体及其封装方法 | |
CN104934517A (zh) | 一种低热阻贴片发光二极管封装结构及封装方法 | |
CN103545436B (zh) | 蓝宝石基led封装结构及其封装方法 | |
CN104037302A (zh) | 一种led封装组件 | |
CN203941950U (zh) | 一种led封装组件 | |
CN106764560B (zh) | 一种led灯的制造方法 | |
CN103296184A (zh) | 一种以蓝宝石做芯片支架的led灯条的制作方法 | |
CN107588333B (zh) | 内嵌驱动电源的g9型led灯标准接口及其制造方法 | |
CN206040708U (zh) | 一种csp芯片级封装结构 | |
CN101572259A (zh) | 一种全彩smd及其封装方法 | |
CN210429881U (zh) | 一种led支架封装结构 | |
CN209822681U (zh) | 一种倒装smd led封装结构 | |
CN106935520A (zh) | 一种内绝缘封装结构及其制造工艺 | |
CN202058786U (zh) | 一种采用cob封装的发光器件 | |
CN207624729U (zh) | 超长智能cob光源LED灯 | |
CN105609620B (zh) | 一种led光引擎封装结构的制备方法 | |
CN205429008U (zh) | 一种金属导热柱cob led光源 | |
CN103021293A (zh) | 一种led显示屏模组的制作方法 | |
CN204204912U (zh) | 片式白光发光二极管 | |
CN202871863U (zh) | 铝线或铝合金线连接的表面贴装式发光二极管器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150923 |
|
WD01 | Invention patent application deemed withdrawn after publication |