KR20240137078A - 바이어스 공급을 위한 능동 스위치 온 타임 제어 - Google Patents
바이어스 공급을 위한 능동 스위치 온 타임 제어 Download PDFInfo
- Publication number
- KR20240137078A KR20240137078A KR1020247028516A KR20247028516A KR20240137078A KR 20240137078 A KR20240137078 A KR 20240137078A KR 1020247028516 A KR1020247028516 A KR 1020247028516A KR 20247028516 A KR20247028516 A KR 20247028516A KR 20240137078 A KR20240137078 A KR 20240137078A
- Authority
- KR
- South Korea
- Prior art keywords
- pulse width
- current
- threshold
- value
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/539—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
- H02M7/5395—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/584,992 | 2022-01-26 | ||
| US17/584,992 US12046448B2 (en) | 2022-01-26 | 2022-01-26 | Active switch on time control for bias supply |
| PCT/US2022/053709 WO2023146665A1 (en) | 2022-01-26 | 2022-12-21 | Active switch on time control for bias supply |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240137078A true KR20240137078A (ko) | 2024-09-19 |
Family
ID=85150781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247028516A Pending KR20240137078A (ko) | 2022-01-26 | 2022-12-21 | 바이어스 공급을 위한 능동 스위치 온 타임 제어 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US12046448B2 (https=) |
| JP (1) | JP2025504890A (https=) |
| KR (1) | KR20240137078A (https=) |
| TW (1) | TW202412138A (https=) |
| WO (1) | WO2023146665A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202536923A (zh) | 2019-07-12 | 2025-09-16 | 新加坡商Aes 全球公司 | 具有控制開關之偏壓供應器 |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
| US12567572B2 (en) | 2023-07-11 | 2026-03-03 | Advanced Energy Industries, Inc. | Plasma behaviors predicted by current measurements during asymmetric bias waveform application |
| US20250174435A1 (en) * | 2023-11-24 | 2025-05-29 | Advanced Energy Industries, Inc. | Transient control of an asymmetric waveform |
Family Cites Families (270)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60126832A (ja) | 1983-12-14 | 1985-07-06 | Hitachi Ltd | ドライエツチング方法および装置 |
| JPS62125626A (ja) | 1985-11-27 | 1987-06-06 | Hitachi Ltd | ドライエツチング装置 |
| US4693805A (en) | 1986-02-14 | 1987-09-15 | Boe Limited | Method and apparatus for sputtering a dielectric target or for reactive sputtering |
| DE3708717A1 (de) | 1987-03-18 | 1988-09-29 | Hans Prof Dr Rer Nat Oechsner | Verfahren und vorrichtung zur bearbeitung von festkoerperoberflaechen durch teilchenbeschuss |
| JPS6453572A (en) | 1987-08-25 | 1989-03-01 | Mitsubishi Electric Corp | Semiconductor integrated circuit device with bipolar element |
| GB2212974B (en) | 1987-11-25 | 1992-02-12 | Fuji Electric Co Ltd | Plasma processing apparatus |
| US4963239A (en) | 1988-01-29 | 1990-10-16 | Hitachi, Ltd. | Sputtering process and an apparatus for carrying out the same |
| JPH02141572A (ja) | 1988-11-24 | 1990-05-30 | Hitachi Ltd | バイアススパツタリング法および装置 |
| KR900013595A (ko) | 1989-02-15 | 1990-09-06 | 미다 가쓰시게 | 플라즈마 에칭방법 및 장치 |
| EP0395415B1 (en) | 1989-04-27 | 1995-03-15 | Fujitsu Limited | Apparatus for and method of processing a semiconductor device using microwave-generated plasma |
| US5556501A (en) | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
| JPH0833862B2 (ja) | 1989-10-23 | 1996-03-29 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | オブジエクト指向コンピユータ・システム |
| US5179264A (en) | 1989-12-13 | 1993-01-12 | International Business Machines Corporation | Solid state microwave powered material and plasma processing systems |
| WO1991009150A1 (fr) | 1989-12-15 | 1991-06-27 | Canon Kabushiki Kaisha | Procede et dispositif de traitement plasmique |
| US5410691A (en) | 1990-05-07 | 1995-04-25 | Next Computer, Inc. | Method and apparatus for providing a network configuration database |
| JP2830978B2 (ja) | 1990-09-21 | 1998-12-02 | 忠弘 大見 | リアクティブイオンエッチング装置及びプラズマプロセス装置 |
| US5057185A (en) | 1990-09-27 | 1991-10-15 | Consortium For Surface Processing, Inc. | Triode plasma reactor with phase modulated plasma control |
| JPH04193329A (ja) | 1990-11-28 | 1992-07-13 | Hitachi Ltd | イオン回収装置 |
| US5604463A (en) | 1992-03-16 | 1997-02-18 | Zero Impedance Systems | Coupling circuit |
| KR970005035B1 (ko) | 1992-03-31 | 1997-04-11 | 마쯔시다덴기산교 가부시기가이샤 | 플라즈마발생방법 및 그 장치 |
| US5427669A (en) | 1992-12-30 | 1995-06-27 | Advanced Energy Industries, Inc. | Thin film DC plasma processing system |
| JP3251087B2 (ja) | 1993-02-16 | 2002-01-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US5487785A (en) | 1993-03-26 | 1996-01-30 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus |
| KR100324792B1 (ko) | 1993-03-31 | 2002-06-20 | 히가시 데쓰로 | 플라즈마처리장치 |
| US5517084A (en) | 1994-07-26 | 1996-05-14 | The Regents, University Of California | Selective ion source |
| US5891350A (en) | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
| US5535906A (en) | 1995-01-30 | 1996-07-16 | Advanced Energy Industries, Inc. | Multi-phase DC plasma processing system |
| US5907221A (en) | 1995-08-16 | 1999-05-25 | Applied Materials, Inc. | Inductively coupled plasma reactor with an inductive coil antenna having independent loops |
| US6794301B2 (en) | 1995-10-13 | 2004-09-21 | Mattson Technology, Inc. | Pulsed plasma processing of semiconductor substrates |
| US5983828A (en) | 1995-10-13 | 1999-11-16 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
| US5767628A (en) | 1995-12-20 | 1998-06-16 | International Business Machines Corporation | Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel |
| KR970064327A (ko) | 1996-02-27 | 1997-09-12 | 모리시다 요이치 | 고주파 전력 인가장치, 플라즈마 발생장치, 플라즈마 처리장치, 고주파 전력 인가방법, 플라즈마 발생방법 및 플라즈마 처리방법 |
| JP3208079B2 (ja) | 1996-02-27 | 2001-09-10 | 松下電器産業株式会社 | 高周波電力印加装置及びプラズマ処理装置 |
| TW335517B (en) | 1996-03-01 | 1998-07-01 | Hitachi Ltd | Apparatus and method for processing plasma |
| IL118638A (en) | 1996-06-12 | 2002-02-10 | Fruchtman Amnon | Beam source |
| TW403959B (en) | 1996-11-27 | 2000-09-01 | Hitachi Ltd | Plasma treatment device |
| US6051114A (en) | 1997-06-23 | 2000-04-18 | Applied Materials, Inc. | Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition |
| US6924455B1 (en) | 1997-06-26 | 2005-08-02 | Applied Science & Technology, Inc. | Integrated plasma chamber and inductively-coupled toroidal plasma source |
| JP2929284B2 (ja) | 1997-09-10 | 1999-08-03 | 株式会社アドテック | 高周波プラズマ処理装置のためのインピーダンス整合及び電力制御システム |
| US6041734A (en) | 1997-12-01 | 2000-03-28 | Applied Materials, Inc. | Use of an asymmetric waveform to control ion bombardment during substrate processing |
| US6273022B1 (en) | 1998-03-14 | 2001-08-14 | Applied Materials, Inc. | Distributed inductively-coupled plasma source |
| US6164241A (en) | 1998-06-30 | 2000-12-26 | Lam Research Corporation | Multiple coil antenna for inductively-coupled plasma generation systems |
| US6361645B1 (en) | 1998-10-08 | 2002-03-26 | Lam Research Corporation | Method and device for compensating wafer bias in a plasma processing chamber |
| JP2000173982A (ja) | 1998-12-01 | 2000-06-23 | Matsushita Electric Ind Co Ltd | プラズマ処理装置およびプラズマ処理方法 |
| KR100542459B1 (ko) | 1999-03-09 | 2006-01-12 | 가부시끼가이샤 히다치 세이사꾸쇼 | 플라즈마처리장치 및 플라즈마처리방법 |
| JP4351755B2 (ja) | 1999-03-12 | 2009-10-28 | キヤノンアネルバ株式会社 | 薄膜作成方法および薄膜作成装置 |
| US6566272B2 (en) | 1999-07-23 | 2003-05-20 | Applied Materials Inc. | Method for providing pulsed plasma during a portion of a semiconductor wafer process |
| DE19937859C2 (de) | 1999-08-13 | 2003-06-18 | Huettinger Elektronik Gmbh | Elektrische Versorgungseinheit für Plasmaanlagen |
| KR100338057B1 (ko) | 1999-08-26 | 2002-05-24 | 황 철 주 | 유도 결합형 플라즈마 발생용 안테나 장치 |
| US6201208B1 (en) | 1999-11-04 | 2001-03-13 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma processing with control of ion energy distribution at the substrates |
| US6392210B1 (en) | 1999-12-31 | 2002-05-21 | Russell F. Jewett | Methods and apparatus for RF power process operations with automatic input power control |
| US6156667A (en) | 1999-12-31 | 2000-12-05 | Litmas, Inc. | Methods and apparatus for plasma processing |
| US6326584B1 (en) | 1999-12-31 | 2001-12-04 | Litmas, Inc. | Methods and apparatus for RF power delivery |
| US6291938B1 (en) | 1999-12-31 | 2001-09-18 | Litmas, Inc. | Methods and apparatus for igniting and sustaining inductively coupled plasma |
| JP4633881B2 (ja) | 2000-02-21 | 2011-02-16 | 株式会社日立製作所 | プラズマ処理装置及びそれを用いた処理方法 |
| WO2001065895A2 (en) | 2000-03-01 | 2001-09-07 | Tokyo Electron Limited | Electrically controlled plasma uniformity in a high density plasma source |
| US6478924B1 (en) | 2000-03-07 | 2002-11-12 | Applied Materials, Inc. | Plasma chamber support having dual electrodes |
| US6894245B2 (en) | 2000-03-17 | 2005-05-17 | Applied Materials, Inc. | Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
| JP4334723B2 (ja) | 2000-03-21 | 2009-09-30 | 新明和工業株式会社 | イオンプレーティング成膜装置、及びイオンプレーティング成膜方法。 |
| US6441555B1 (en) | 2000-03-31 | 2002-08-27 | Lam Research Corporation | Plasma excitation coil |
| US6507155B1 (en) | 2000-04-06 | 2003-01-14 | Applied Materials Inc. | Inductively coupled plasma source with controllable power deposition |
| US6694915B1 (en) | 2000-07-06 | 2004-02-24 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
| US6685798B1 (en) | 2000-07-06 | 2004-02-03 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
| US7037813B2 (en) | 2000-08-11 | 2006-05-02 | Applied Materials, Inc. | Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage |
| US6544895B1 (en) | 2000-08-17 | 2003-04-08 | Micron Technology, Inc. | Methods for use of pulsed voltage in a plasma reactor |
| US6485572B1 (en) | 2000-08-28 | 2002-11-26 | Micron Technology, Inc. | Use of pulsed grounding source in a plasma reactor |
| US6875700B2 (en) | 2000-08-29 | 2005-04-05 | Board Of Regents, The University Of Texas System | Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges |
| US6806201B2 (en) | 2000-09-29 | 2004-10-19 | Hitachi, Ltd. | Plasma processing apparatus and method using active matching |
| US6777037B2 (en) | 2001-02-21 | 2004-08-17 | Hitachi, Ltd. | Plasma processing method and apparatus |
| US7096819B2 (en) | 2001-03-30 | 2006-08-29 | Lam Research Corporation | Inductive plasma processor having coil with plural windings and method of controlling plasma density |
| US6583572B2 (en) | 2001-03-30 | 2003-06-24 | Lam Research Corporation | Inductive plasma processor including current sensor for plasma excitation coil |
| US20020144786A1 (en) | 2001-04-05 | 2002-10-10 | Angstron Systems, Inc. | Substrate temperature control in an ALD reactor |
| WO2002097855A1 (en) | 2001-05-29 | 2002-12-05 | Tokyo Electron Limited | Plasma processing apparatus and method |
| US6920312B1 (en) | 2001-05-31 | 2005-07-19 | Lam Research Corporation | RF generating system with fast loop control |
| US7201936B2 (en) | 2001-06-19 | 2007-04-10 | Applied Materials, Inc. | Method of feedback control of sub-atmospheric chemical vapor deposition processes |
| US7698012B2 (en) | 2001-06-19 | 2010-04-13 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
| US6913938B2 (en) | 2001-06-19 | 2005-07-05 | Applied Materials, Inc. | Feedback control of plasma-enhanced chemical vapor deposition processes |
| US6714033B1 (en) | 2001-07-11 | 2004-03-30 | Lam Research Corporation | Probe for direct wafer potential measurements |
| US6853953B2 (en) | 2001-08-07 | 2005-02-08 | Tokyo Electron Limited | Method for characterizing the performance of an electrostatic chuck |
| US6984198B2 (en) | 2001-08-14 | 2006-01-10 | Applied Materials, Inc. | Experiment management system, method and medium |
| US6885453B2 (en) | 2001-11-13 | 2005-04-26 | Sick Ag | Gas permeable probe for use in an optical analyzer for an exhaust gas stream flowing through a duct or chimney |
| JP4088499B2 (ja) | 2002-08-28 | 2008-05-21 | 株式会社ダイヘン | インピーダンス整合器の出力端特性解析方法、およびインピーダンス整合器、ならびにインピーダンス整合器の出力端特性解析システム |
| US7931787B2 (en) | 2002-02-26 | 2011-04-26 | Donald Bennett Hilliard | Electron-assisted deposition process and apparatus |
| JP4175456B2 (ja) | 2002-03-26 | 2008-11-05 | 株式会社 東北テクノアーチ | オンウエハ・モニタリング・システム |
| DE10214190B4 (de) | 2002-03-28 | 2011-06-30 | Minebea Co., Ltd. | Stromversorgung mit mehreren parallel geschalteten Schaltnetzteilen |
| US6703080B2 (en) | 2002-05-20 | 2004-03-09 | Eni Technology, Inc. | Method and apparatus for VHF plasma processing with load mismatch reliability and stability |
| US6707051B2 (en) | 2002-07-10 | 2004-03-16 | Wintek Corporation | RF loaded line type capacitive plasma source for broad range of operating gas pressure |
| US6830650B2 (en) | 2002-07-12 | 2004-12-14 | Advanced Energy Industries, Inc. | Wafer probe for measuring plasma and surface characteristics in plasma processing environments |
| US20040016402A1 (en) | 2002-07-26 | 2004-01-29 | Walther Steven R. | Methods and apparatus for monitoring plasma parameters in plasma doping systems |
| US7504006B2 (en) | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
| US6802366B1 (en) | 2002-10-31 | 2004-10-12 | Advanced Energy Industries, Inc. | Swage method for cooling pipes |
| JP4319514B2 (ja) | 2002-11-29 | 2009-08-26 | 株式会社日立ハイテクノロジーズ | サグ補償機能付き高周波電源を有するプラズマ処理装置 |
| US7468494B2 (en) | 2003-01-31 | 2008-12-23 | Advanced Energy Industries | Reaction enhancing gas feed for injecting gas into a plasma chamber |
| US6819096B2 (en) | 2003-01-31 | 2004-11-16 | Advanced Energy Industries, Inc. | Power measurement mechanism for a transformer coupled plasma source |
| US6927358B2 (en) | 2003-01-31 | 2005-08-09 | Advanced Energy Industries, Inc. | Vacuum seal protection in a dielectric break |
| US6822396B2 (en) | 2003-01-31 | 2004-11-23 | Advanced Energy Industries, Inc. | Transformer ignition circuit for a transformer coupled plasma source |
| US6724148B1 (en) | 2003-01-31 | 2004-04-20 | Advanced Energy Industries, Inc. | Mechanism for minimizing ion bombardment energy in a plasma chamber |
| US6781317B1 (en) | 2003-02-24 | 2004-08-24 | Applied Science And Technology, Inc. | Methods and apparatus for calibration and metrology for an integrated RF generator system |
| DE10317208A1 (de) | 2003-04-15 | 2004-11-04 | Robert Bosch Gmbh | Plasmadepositionsverfahren |
| US7247218B2 (en) | 2003-05-16 | 2007-07-24 | Applied Materials, Inc. | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power |
| CA2529794A1 (en) | 2003-06-19 | 2004-12-29 | Plasma Control Systems Llc | Plasma production device and method and rf driver circuit with adjustable duty cycle |
| US6967305B2 (en) | 2003-08-18 | 2005-11-22 | Mks Instruments, Inc. | Control of plasma transitions in sputter processing systems |
| US7615132B2 (en) | 2003-10-17 | 2009-11-10 | Hitachi High-Technologies Corporation | Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method |
| US7838430B2 (en) | 2003-10-28 | 2010-11-23 | Applied Materials, Inc. | Plasma control using dual cathode frequency mixing |
| KR100877304B1 (ko) | 2003-11-27 | 2009-01-09 | 가부시키가이샤 다이헨 | 고주파 전력 공급 시스템 |
| US7464662B2 (en) | 2004-01-28 | 2008-12-16 | Tokyo Electron Limited | Compact, distributed inductive element for large scale inductively-coupled plasma sources |
| US20050260354A1 (en) | 2004-05-20 | 2005-11-24 | Varian Semiconductor Equipment Associates, Inc. | In-situ process chamber preparation methods for plasma ion implantation systems |
| US7169256B2 (en) | 2004-05-28 | 2007-01-30 | Lam Research Corporation | Plasma processor with electrode responsive to multiple RF frequencies |
| EP2477207A3 (en) | 2004-09-24 | 2014-09-03 | Zond, Inc. | Apparatus for generating high-current electrical discharges |
| US7666464B2 (en) | 2004-10-23 | 2010-02-23 | Applied Materials, Inc. | RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor |
| JP4111186B2 (ja) | 2004-11-18 | 2008-07-02 | 日新電機株式会社 | イオン照射装置 |
| US20060130971A1 (en) | 2004-12-21 | 2006-06-22 | Applied Materials, Inc. | Apparatus for generating plasma by RF power |
| JP4468194B2 (ja) | 2005-01-28 | 2010-05-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
| JP4739793B2 (ja) | 2005-03-31 | 2011-08-03 | 株式会社ダイヘン | 高周波電源装置 |
| TWI298909B (en) | 2005-04-12 | 2008-07-11 | Nat Univ Tsing Hua | An inductively-coupled plasma etch apparatus and a feedback control method thereof |
| US7528386B2 (en) | 2005-04-21 | 2009-05-05 | Board Of Trustees Of University Of Illinois | Submicron particle removal |
| CN100362619C (zh) | 2005-08-05 | 2008-01-16 | 中微半导体设备(上海)有限公司 | 真空反应室的射频匹配耦合网络及其配置方法 |
| US7568117B1 (en) | 2005-10-03 | 2009-07-28 | Zilker Labs, Inc. | Adaptive thresholding technique for power supplies during margining events |
| CN101297480B (zh) | 2005-10-31 | 2012-08-08 | Mks仪器股份有限公司 | 用于向动态负载传递功率的系统和方法 |
| US20080179948A1 (en) | 2005-10-31 | 2008-07-31 | Mks Instruments, Inc. | Radio frequency power delivery system |
| TWI425767B (zh) | 2005-10-31 | 2014-02-01 | Mks Instr Inc | 無線電頻率電力傳送系統 |
| JP2007336148A (ja) | 2006-06-14 | 2007-12-27 | Daihen Corp | 電気特性調整装置 |
| US8012306B2 (en) | 2006-02-15 | 2011-09-06 | Lam Research Corporation | Plasma processing reactor with multiple capacitive and inductive power sources |
| US7713430B2 (en) | 2006-02-23 | 2010-05-11 | Micron Technology, Inc. | Using positive DC offset of bias RF to neutralize charge build-up of etch features |
| US7811939B2 (en) | 2006-03-27 | 2010-10-12 | Tokyo Electron Limited | Plasma etching method |
| EP1845755A3 (en) | 2006-04-10 | 2014-04-02 | EMD Technologies, Inc. | Illumination systems |
| US7645357B2 (en) | 2006-04-24 | 2010-01-12 | Applied Materials, Inc. | Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency |
| US20070246163A1 (en) | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and inductive plasma sources |
| JP2007311182A (ja) | 2006-05-18 | 2007-11-29 | Tokyo Electron Ltd | 誘導結合プラズマ処理装置およびプラズマ処理方法 |
| US7829468B2 (en) | 2006-06-07 | 2010-11-09 | Lam Research Corporation | Method and apparatus to detect fault conditions of plasma processing reactor |
| DE102006034755A1 (de) | 2006-07-24 | 2008-01-31 | Carl Zeiss Smt Ag | Optische Vorrichtung sowie Verfahren zur Korrektur bzw. Verbesserung des Abbildungsverhaltens einer optischen Vorrichtung |
| EP2102889B1 (en) | 2006-12-12 | 2020-10-07 | Evatec AG | Rf substrate bias with high power impulse magnetron sputtering (hipims) |
| JP2008157906A (ja) | 2006-12-25 | 2008-07-10 | Adtec Plasma Technology Co Ltd | 出力インピーダンス検出方法およびこの方法を用いたインピーダンスのセンサー、高周波電源につながる負荷側の電力モニターならびに高周波電源の制御装置 |
| EP1978542B1 (de) | 2007-03-08 | 2010-12-29 | HÜTTINGER Elektronik GmbH + Co. KG | Verfahren und Vorrichtung zum Unterdrücken von Bogenentladungen beim Betreiben eines Plasmaprozesses |
| US7867409B2 (en) | 2007-03-29 | 2011-01-11 | Tokyo Electron Limited | Control of ion angular distribution function at wafer surface |
| US8181490B2 (en) | 2007-04-25 | 2012-05-22 | Seamless Technologies. LLC | Vacuum sealed paint roller cover package and method of making the same |
| US9123509B2 (en) | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| WO2009023135A1 (en) | 2007-08-15 | 2009-02-19 | Applied Materials, Inc. | Apparatus for wafer level arc detection at an rf bias impedance match to the pedestal electrode |
| US7737702B2 (en) | 2007-08-15 | 2010-06-15 | Applied Materials, Inc. | Apparatus for wafer level arc detection at an electrostatic chuck electrode |
| JP5165968B2 (ja) | 2007-08-27 | 2013-03-21 | 東京エレクトロン株式会社 | プラズマ粒子シミュレーション方法、記憶媒体、プラズマ粒子シミュレータ、及びプラズマ処理装置 |
| JP4607930B2 (ja) | 2007-09-14 | 2011-01-05 | 株式会社東芝 | プラズマ処理装置およびプラズマ処理方法 |
| US8140292B2 (en) | 2007-09-18 | 2012-03-20 | Wisconsin Alumni Research Foundation | Method and system for controlling a voltage waveform |
| PT2211916E (pt) | 2007-11-06 | 2016-01-11 | Creo Medical Ltd | Sistema de esterilização por plasma de micro-ondas e respetivos aplicadores |
| US20090200494A1 (en) | 2008-02-11 | 2009-08-13 | Varian Semiconductor Equipment Associates, Inc. | Techniques for cold implantation of carbon-containing species |
| US8643280B2 (en) | 2008-03-20 | 2014-02-04 | RUHR-UNIVERSITäT BOCHUM | Method for controlling ion energy in radio frequency plasmas |
| US7777179B2 (en) | 2008-03-31 | 2010-08-17 | Tokyo Electron Limited | Two-grid ion energy analyzer and methods of manufacturing and operating |
| JP5319150B2 (ja) | 2008-03-31 | 2013-10-16 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体 |
| KR101528528B1 (ko) | 2008-05-14 | 2015-06-12 | 어플라이드 머티어리얼스, 인코포레이티드 | Rf 전력 전달을 위한 시간 분해된 조정 방식을 이용하는 펄스화된 플라즈마 처리를 위한 방법 및 장치 |
| JP5124344B2 (ja) | 2008-05-26 | 2013-01-23 | 株式会社アルバック | バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置並びに出力方法 |
| US8357264B2 (en) | 2008-05-29 | 2013-01-22 | Applied Materials, Inc. | Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator |
| US8002945B2 (en) | 2008-05-29 | 2011-08-23 | Applied Materials, Inc. | Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator |
| JP2011521735A (ja) | 2008-05-30 | 2011-07-28 | コロラド ステート ユニバーシティ リサーチ ファンデーション | プラズマを発生させるためのシステム、方法、および装置 |
| JP5372419B2 (ja) | 2008-06-25 | 2013-12-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| TWI390582B (zh) | 2008-07-16 | 2013-03-21 | 住友重機械工業股份有限公司 | Plasma processing device and plasma processing method |
| WO2010013476A1 (ja) | 2008-07-31 | 2010-02-04 | キヤノンアネルバ株式会社 | プラズマ処理装置および電子デバイスの製造方法 |
| US8103492B2 (en) | 2008-09-05 | 2012-01-24 | Tokyo Electron Limited | Plasma fluid modeling with transient to stochastic transformation |
| JP5295833B2 (ja) | 2008-09-24 | 2013-09-18 | 株式会社東芝 | 基板処理装置および基板処理方法 |
| US9887069B2 (en) | 2008-12-19 | 2018-02-06 | Lam Research Corporation | Controlling ion energy distribution in plasma processing systems |
| JP5221403B2 (ja) | 2009-01-26 | 2013-06-26 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置および記憶媒体 |
| US8319436B2 (en) | 2009-02-02 | 2012-11-27 | Advanced Energy Industries, Inc. | Passive power distribution for multiple electrode inductive plasma source |
| US8040068B2 (en) | 2009-02-05 | 2011-10-18 | Mks Instruments, Inc. | Radio frequency power control system |
| US8363378B2 (en) | 2009-02-17 | 2013-01-29 | Intevac, Inc. | Method for optimized removal of wafer from electrostatic chuck |
| JP5395491B2 (ja) | 2009-03-31 | 2014-01-22 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| KR101841236B1 (ko) | 2009-04-03 | 2018-03-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 rf-dc 스퍼터링과 이 프로세스의 단차 도포성 및 막 균일성을 개선하기 위한 방법 |
| US8475673B2 (en) | 2009-04-24 | 2013-07-02 | Lam Research Company | Method and apparatus for high aspect ratio dielectric etch |
| US8674606B2 (en) | 2009-04-27 | 2014-03-18 | Advanced Energy Industries, Inc. | Detecting and preventing instabilities in plasma processes |
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9287092B2 (en) | 2009-05-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Method and apparatus for controlling ion energy distribution |
| US9435029B2 (en) | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
| US9287086B2 (en) | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
| US8271121B2 (en) | 2009-06-30 | 2012-09-18 | Lam Research Corporation | Methods and arrangements for in-situ process monitoring and control for plasma processing tools |
| CN201465987U (zh) | 2009-07-03 | 2010-05-12 | 中微半导体设备(上海)有限公司 | 等离子体处理装置 |
| JP5496568B2 (ja) | 2009-08-04 | 2014-05-21 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US8404598B2 (en) | 2009-08-07 | 2013-03-26 | Applied Materials, Inc. | Synchronized radio frequency pulsing for plasma etching |
| US20110065161A1 (en) | 2009-09-14 | 2011-03-17 | Board Of Regents, The University Of Texas System | Bipolar solid state marx generator |
| US8222822B2 (en) | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
| US8501631B2 (en) | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
| CN101835334B (zh) | 2010-01-19 | 2013-01-30 | 大连理工大学 | 一种交叉场放电共振耦合的控制方法 |
| JP2011211168A (ja) | 2010-03-09 | 2011-10-20 | Toshiba Corp | 半導体装置の製造方法及び半導体製造装置 |
| US20110226617A1 (en) | 2010-03-22 | 2011-09-22 | Applied Materials, Inc. | Dielectric deposition using a remote plasma source |
| US8795488B2 (en) | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Apparatus for physical vapor deposition having centrally fed RF energy |
| JP5623115B2 (ja) | 2010-04-09 | 2014-11-12 | キヤノン株式会社 | プラズマ放電用電源装置、およびプラズマ放電処理方法 |
| JP2011228436A (ja) | 2010-04-19 | 2011-11-10 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
| US9309594B2 (en) | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
| EP2407998B1 (en) | 2010-07-15 | 2019-02-13 | Ecole Polytechnique | Plasma processing in a capacitively-coupled reactor with trapezoidal-waveform excitation |
| US9362089B2 (en) | 2010-08-29 | 2016-06-07 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| KR20120022251A (ko) | 2010-09-01 | 2012-03-12 | 삼성전자주식회사 | 플라즈마 식각방법 및 그의 장치 |
| JP2012104382A (ja) | 2010-11-10 | 2012-05-31 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法 |
| JP5946227B2 (ja) | 2011-01-04 | 2016-07-05 | アドバンスト・エナジー・インダストリーズ・インコーポレイテッドAdvanced Energy Industries, Inc. | 電力送達システム、電力制御システム、および、電力を送達するまたは電力制御する方法 |
| US8698107B2 (en) | 2011-01-10 | 2014-04-15 | Varian Semiconductor Equipment Associates, Inc. | Technique and apparatus for monitoring ion mass, energy, and angle in processing systems |
| US8723423B2 (en) | 2011-01-25 | 2014-05-13 | Advanced Energy Industries, Inc. | Electrostatic remote plasma source |
| US8801950B2 (en) | 2011-03-07 | 2014-08-12 | Novellus Systems, Inc. | Reduction of a process volume of a processing chamber using a nested dynamic inert volume |
| JP6203476B2 (ja) | 2011-03-08 | 2017-09-27 | 東京エレクトロン株式会社 | 基板温度制御方法及びプラズマ処理装置 |
| JP5718124B2 (ja) | 2011-03-30 | 2015-05-13 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| US8900402B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
| US9177756B2 (en) | 2011-04-11 | 2015-11-03 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
| US10225919B2 (en) | 2011-06-30 | 2019-03-05 | Aes Global Holdings, Pte. Ltd | Projected plasma source |
| US20130006555A1 (en) | 2011-06-30 | 2013-01-03 | Advanced Energy Industries, Inc. | Method and apparatus for measuring the power of a power generator while operating in variable frequency mode and/or while operating in pulsing mode |
| US8735291B2 (en) | 2011-08-25 | 2014-05-27 | Tokyo Electron Limited | Method for etching high-k dielectric using pulsed bias power |
| US9604877B2 (en) | 2011-09-02 | 2017-03-28 | Guardian Industries Corp. | Method of strengthening glass using plasma torches and/or arc jets, and articles made according to the same |
| US8717785B2 (en) | 2011-09-30 | 2014-05-06 | Power Integrations, Inc. | Multi-stage sampling circuit for a power converter controller |
| US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
| US20130122711A1 (en) | 2011-11-10 | 2013-05-16 | Alexei Marakhtanov | System, method and apparatus for plasma sheath voltage control |
| JP5977509B2 (ja) | 2011-12-09 | 2016-08-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US9390893B2 (en) | 2012-02-22 | 2016-07-12 | Lam Research Corporation | Sub-pulsing during a state |
| US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
| US9283635B2 (en) | 2012-03-02 | 2016-03-15 | Lincoln Global, Inc. | Synchronized hybrid gas metal arc welding with TIG/plasma welding |
| US9210790B2 (en) | 2012-08-28 | 2015-12-08 | Advanced Energy Industries, Inc. | Systems and methods for calibrating a switched mode ion energy distribution system |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| KR101860182B1 (ko) | 2012-08-28 | 2018-05-21 | 어드밴스드 에너지 인더스트리즈 인코포레이티드 | 스위칭 모드 이온 에너지 분포 시스템을 제어하기 위한 방법 |
| KR101909571B1 (ko) | 2012-08-28 | 2018-10-19 | 어드밴스드 에너지 인더스트리즈 인코포레이티드 | 넓은 다이내믹 레인지 이온 에너지 바이어스 제어; 고속 이온 에너지 스위칭; 이온 에너지 제어와 펄스동작 바이어스 서플라이; 및 가상 전면 패널 |
| US9226380B2 (en) | 2012-11-01 | 2015-12-29 | Advanced Energy Industries, Inc. | Adjustable non-dissipative voltage boosting snubber network |
| US9129776B2 (en) | 2012-11-01 | 2015-09-08 | Advanced Energy Industries, Inc. | Differing boost voltages applied to two or more anodeless electrodes for plasma processing |
| JP6002556B2 (ja) | 2012-11-27 | 2016-10-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| US9043525B2 (en) | 2012-12-14 | 2015-05-26 | Lam Research Corporation | Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool |
| US9312106B2 (en) | 2013-03-13 | 2016-04-12 | Applied Materials, Inc. | Digital phase controller for two-phase operation of a plasma reactor |
| US9790282B2 (en) | 2013-03-25 | 2017-10-17 | The United States Of America, As Represented By The Secretary, Department Of Health And Human Services | Anti-CD276 polypeptides, proteins, and chimeric antigen receptors |
| JP6035606B2 (ja) | 2013-04-09 | 2016-11-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
| US9053908B2 (en) | 2013-09-19 | 2015-06-09 | Lam Research Corporation | Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching |
| KR102152811B1 (ko) | 2013-11-06 | 2020-09-07 | 어플라이드 머티어리얼스, 인코포레이티드 | Dc 바이어스 변조에 의한 입자 발생 억제기 |
| US9697993B2 (en) | 2013-11-06 | 2017-07-04 | Tokyo Electron Limited | Non-ambipolar plasma ehncanced DC/VHF phasor |
| US9577519B2 (en) | 2014-02-05 | 2017-02-21 | Fairchild Semiconductor Corporation | Enhanced peak current mode DC-DC power converter |
| JP6231399B2 (ja) | 2014-02-17 | 2017-11-15 | キヤノンアネルバ株式会社 | 処理装置 |
| KR102222902B1 (ko) | 2014-05-12 | 2021-03-05 | 삼성전자주식회사 | 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법 |
| US10047438B2 (en) | 2014-06-10 | 2018-08-14 | Lam Research Corporation | Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas |
| US9520267B2 (en) | 2014-06-20 | 2016-12-13 | Applied Mateirals, Inc. | Bias voltage frequency controlled angular ion distribution in plasma processing |
| US9659751B2 (en) | 2014-07-25 | 2017-05-23 | Applied Materials, Inc. | System and method for selective coil excitation in inductively coupled plasma processing reactors |
| KR20160022458A (ko) | 2014-08-19 | 2016-03-02 | 삼성전자주식회사 | 플라즈마 장비 및 이의 동작 방법 |
| JP6315809B2 (ja) | 2014-08-28 | 2018-04-25 | 東京エレクトロン株式会社 | エッチング方法 |
| US10115567B2 (en) | 2014-09-17 | 2018-10-30 | Tokyo Electron Limited | Plasma processing apparatus |
| JP6512962B2 (ja) | 2014-09-17 | 2019-05-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| KR101677748B1 (ko) | 2014-10-29 | 2016-11-29 | 삼성전자 주식회사 | 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법 |
| KR101700391B1 (ko) | 2014-11-04 | 2017-02-13 | 삼성전자주식회사 | 펄스 플라즈마의 고속 광학적 진단 시스템 |
| US9536749B2 (en) | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
| JP6396822B2 (ja) | 2015-02-16 | 2018-09-26 | 東京エレクトロン株式会社 | プラズマ処理装置のサセプタの電位を制御する方法 |
| US9595424B2 (en) | 2015-03-02 | 2017-03-14 | Lam Research Corporation | Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes |
| US10163610B2 (en) | 2015-07-13 | 2018-12-25 | Lam Research Corporation | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
| US10854492B2 (en) | 2015-08-18 | 2020-12-01 | Lam Research Corporation | Edge ring assembly for improving feature profile tilting at extreme edge of wafer |
| US9788405B2 (en) | 2015-10-03 | 2017-10-10 | Applied Materials, Inc. | RF power delivery with approximated saw tooth wave pulsing |
| JP6541540B2 (ja) | 2015-10-06 | 2019-07-10 | 東京エレクトロン株式会社 | プラズマ処理装置のインピーダンス整合のための方法 |
| US9761414B2 (en) | 2015-10-08 | 2017-09-12 | Lam Research Corporation | Uniformity control circuit for use within an impedance matching circuit |
| US9754767B2 (en) | 2015-10-13 | 2017-09-05 | Applied Materials, Inc. | RF pulse reflection reduction for processing substrates |
| CN106920729B (zh) | 2015-12-28 | 2019-05-31 | 中微半导体设备(上海)股份有限公司 | 一种均匀刻蚀基片的等离子体处理装置及方法 |
| US10090162B2 (en) | 2016-01-18 | 2018-10-02 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing device |
| US12456611B2 (en) | 2016-06-13 | 2025-10-28 | Applied Materials, Inc. | Systems and methods for controlling a voltage waveform at a substrate during plasma processing |
| US11430635B2 (en) | 2018-07-27 | 2022-08-30 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
| US10665433B2 (en) | 2016-09-19 | 2020-05-26 | Varian Semiconductor Equipment Associates, Inc. | Extreme edge uniformity control |
| US9872373B1 (en) | 2016-10-25 | 2018-01-16 | Applied Materials, Inc. | Smart multi-level RF pulsing methods |
| US10312048B2 (en) | 2016-12-12 | 2019-06-04 | Applied Materials, Inc. | Creating ion energy distribution functions (IEDF) |
| CN206272512U (zh) | 2016-12-20 | 2017-06-20 | 厦门英诺尔充源电子有限公司 | 一种安规电容防护开关电源装置 |
| US10373804B2 (en) | 2017-02-03 | 2019-08-06 | Applied Materials, Inc. | System for tunable workpiece biasing in a plasma reactor |
| US10396601B2 (en) | 2017-05-25 | 2019-08-27 | Mks Instruments, Inc. | Piecewise RF power systems and methods for supplying pre-distorted RF bias voltage signals to an electrode in a processing chamber |
| US10395894B2 (en) | 2017-08-31 | 2019-08-27 | Lam Research Corporation | Systems and methods for achieving peak ion energy enhancement with a low angular spread |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| WO2019099870A1 (en) | 2017-11-17 | 2019-05-23 | Advanced Energy Industries, Inc. | Synchronized pulsing of plasma processing source and substrate bias |
| KR20250153883A (ko) | 2017-11-17 | 2025-10-27 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용 |
| JP7289313B2 (ja) | 2017-11-17 | 2023-06-09 | エーイーエス グローバル ホールディングス, プライベート リミテッド | プラズマ処理のためのイオンバイアス電圧の空間的および時間的制御 |
| US12230476B2 (en) | 2017-11-17 | 2025-02-18 | Advanced Energy Industries, Inc. | Integrated control of a plasma processing system |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| TW202536923A (zh) | 2019-07-12 | 2025-09-16 | 新加坡商Aes 全球公司 | 具有控制開關之偏壓供應器 |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US20230050841A1 (en) * | 2021-08-13 | 2023-02-16 | Advanced Energy Industries, Inc. | Configurable bias supply with bidirectional switch |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
| US20240242945A1 (en) | 2023-01-12 | 2024-07-18 | Advanced Energy Industries, Inc. | Additional stray capacitor as another tuning knob for 1-supply ev source |
-
2022
- 2022-01-26 US US17/584,992 patent/US12046448B2/en active Active
- 2022-12-21 KR KR1020247028516A patent/KR20240137078A/ko active Pending
- 2022-12-21 JP JP2024543490A patent/JP2025504890A/ja active Pending
- 2022-12-21 WO PCT/US2022/053709 patent/WO2023146665A1/en not_active Ceased
- 2022-12-26 TW TW111149958A patent/TW202412138A/zh unknown
-
2024
- 2024-06-13 US US18/742,088 patent/US12308210B2/en active Active
-
2025
- 2025-05-14 US US19/207,878 patent/US20250391639A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2025504890A (ja) | 2025-02-19 |
| US12308210B2 (en) | 2025-05-20 |
| US20250391639A1 (en) | 2025-12-25 |
| TW202412138A (zh) | 2024-03-16 |
| WO2023146665A1 (en) | 2023-08-03 |
| US20230238216A1 (en) | 2023-07-27 |
| US20250022683A1 (en) | 2025-01-16 |
| US12046448B2 (en) | 2024-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12009179B2 (en) | Bias supply control and data processing | |
| JP7777209B2 (ja) | 波形を生成する装置 | |
| KR20240137078A (ko) | 바이어스 공급을 위한 능동 스위치 온 타임 제어 | |
| US20240242945A1 (en) | Additional stray capacitor as another tuning knob for 1-supply ev source | |
| US12603247B2 (en) | Transition control in a bias supply | |
| US20230050841A1 (en) | Configurable bias supply with bidirectional switch | |
| TW202536912A (zh) | 基於阻抗的電漿處理偏壓控制 | |
| KR20260046124A (ko) | 비대칭 바이어스 파형 적용 시 전류 측정에 의해 예측되는 플라즈마 거동 | |
| US20250279268A1 (en) | Plasma processing based on bias supply reporting |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| R18 | Changes to party contact information recorded |
Free format text: ST27 STATUS EVENT CODE: A-3-3-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| E13 | Pre-grant limitation requested |
Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11 | Amendment of application requested |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13 | Application amended |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |