KR20240079175A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20240079175A
KR20240079175A KR1020230167823A KR20230167823A KR20240079175A KR 20240079175 A KR20240079175 A KR 20240079175A KR 1020230167823 A KR1020230167823 A KR 1020230167823A KR 20230167823 A KR20230167823 A KR 20230167823A KR 20240079175 A KR20240079175 A KR 20240079175A
Authority
KR
South Korea
Prior art keywords
insulating layer
oxide
region
oxide semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020230167823A
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English (en)
Korean (ko)
Inventor
하지메 와따까베
마사시 즈부꾸
도시나리 사사끼
다까야 다마루
마리나 모찌즈끼
료 오노데라
Original Assignee
가부시키가이샤 재팬 디스프레이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 재팬 디스프레이 filed Critical 가부시키가이샤 재팬 디스프레이
Publication of KR20240079175A publication Critical patent/KR20240079175A/ko
Pending legal-status Critical Current

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Classifications

    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L29/045—
    • H01L29/66969—
    • H01L29/78606—
    • H01L29/78696—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices

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  • Thin Film Transistor (AREA)
KR1020230167823A 2022-11-28 2023-11-28 반도체 장치 Pending KR20240079175A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022189329A JP2024077307A (ja) 2022-11-28 2022-11-28 半導体装置
JPJP-P-2022-189329 2022-11-28

Publications (1)

Publication Number Publication Date
KR20240079175A true KR20240079175A (ko) 2024-06-04

Family

ID=91026369

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020230167823A Pending KR20240079175A (ko) 2022-11-28 2023-11-28 반도체 장치

Country Status (6)

Country Link
US (1) US20240178325A1 (https=)
JP (1) JP2024077307A (https=)
KR (1) KR20240079175A (https=)
CN (1) CN118099223A (https=)
DE (1) DE102023211597A1 (https=)
TW (1) TWI902041B (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014099601A (ja) 2012-10-19 2014-05-29 Semiconductor Energy Lab Co Ltd 酸化物半導体膜を含む多層膜及び半導体装置の作製方法
JP2016184771A (ja) 2012-08-03 2016-10-20 株式会社半導体エネルギー研究所 半導体装置
JP2018006730A (ja) 2016-02-12 2018-01-11 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を有する表示装置
JP2021108405A (ja) 2010-09-13 2021-07-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2021141338A (ja) 2012-09-14 2021-09-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2021153196A (ja) 2013-09-23 2021-09-30 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050218407A1 (en) * 2003-08-18 2005-10-06 Yuki Matsuura Array substrate, liquid crystal display device and method of manufacturing array substrate
CN102569412B (zh) * 2010-12-20 2015-02-04 京东方科技集团股份有限公司 薄膜晶体管器件及其制造方法
WO2012147657A1 (ja) * 2011-04-28 2012-11-01 シャープ株式会社 半導体装置、アクティブマトリクス基板、及び表示装置
TWI644434B (zh) * 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6970511B2 (ja) * 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
CN111788664B (zh) * 2018-03-01 2024-04-16 株式会社半导体能源研究所 半导体装置的制造方法
US11121263B2 (en) * 2019-08-27 2021-09-14 Apple Inc. Hydrogen trap layer for display device and the same
JP7534083B2 (ja) * 2019-11-26 2024-08-14 株式会社ジャパンディスプレイ 薄膜トランジスタの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021108405A (ja) 2010-09-13 2021-07-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2016184771A (ja) 2012-08-03 2016-10-20 株式会社半導体エネルギー研究所 半導体装置
JP2021141338A (ja) 2012-09-14 2021-09-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2014099601A (ja) 2012-10-19 2014-05-29 Semiconductor Energy Lab Co Ltd 酸化物半導体膜を含む多層膜及び半導体装置の作製方法
JP2021153196A (ja) 2013-09-23 2021-09-30 株式会社半導体エネルギー研究所 半導体装置
JP2018006730A (ja) 2016-02-12 2018-01-11 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を有する表示装置

Also Published As

Publication number Publication date
US20240178325A1 (en) 2024-05-30
DE102023211597A1 (de) 2024-05-29
CN118099223A (zh) 2024-05-28
TW202422890A (zh) 2024-06-01
JP2024077307A (ja) 2024-06-07
TWI902041B (zh) 2025-10-21

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