DE102023211597A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE102023211597A1
DE102023211597A1 DE102023211597.2A DE102023211597A DE102023211597A1 DE 102023211597 A1 DE102023211597 A1 DE 102023211597A1 DE 102023211597 A DE102023211597 A DE 102023211597A DE 102023211597 A1 DE102023211597 A1 DE 102023211597A1
Authority
DE
Germany
Prior art keywords
insulating layer
oxide
semiconductor device
oxide semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102023211597.2A
Other languages
German (de)
English (en)
Inventor
Hajime Watakabe
Masashi TSUBUKU
Toshinari Sasaki
Takaya TAMARU
Marina MOCHIZUKI
Ryo ONODERA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Publication of DE102023211597A1 publication Critical patent/DE102023211597A1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices

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  • Thin Film Transistor (AREA)
DE102023211597.2A 2022-11-28 2023-11-22 Halbleitervorrichtung Pending DE102023211597A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022189329A JP2024077307A (ja) 2022-11-28 2022-11-28 半導体装置
JP2022-189329 2022-11-28

Publications (1)

Publication Number Publication Date
DE102023211597A1 true DE102023211597A1 (de) 2024-05-29

Family

ID=91026369

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102023211597.2A Pending DE102023211597A1 (de) 2022-11-28 2023-11-22 Halbleitervorrichtung

Country Status (6)

Country Link
US (1) US20240178325A1 (https=)
JP (1) JP2024077307A (https=)
KR (1) KR20240079175A (https=)
CN (1) CN118099223A (https=)
DE (1) DE102023211597A1 (https=)
TW (1) TWI902041B (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014099601A (ja) 2012-10-19 2014-05-29 Semiconductor Energy Lab Co Ltd 酸化物半導体膜を含む多層膜及び半導体装置の作製方法
JP2016184771A (ja) 2012-08-03 2016-10-20 株式会社半導体エネルギー研究所 半導体装置
JP2018006730A (ja) 2016-02-12 2018-01-11 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を有する表示装置
JP2021108405A (ja) 2010-09-13 2021-07-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2021141338A (ja) 2012-09-14 2021-09-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2021153196A (ja) 2013-09-23 2021-09-30 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050218407A1 (en) * 2003-08-18 2005-10-06 Yuki Matsuura Array substrate, liquid crystal display device and method of manufacturing array substrate
CN102569412B (zh) * 2010-12-20 2015-02-04 京东方科技集团股份有限公司 薄膜晶体管器件及其制造方法
WO2012147657A1 (ja) * 2011-04-28 2012-11-01 シャープ株式会社 半導体装置、アクティブマトリクス基板、及び表示装置
TWI644434B (zh) * 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6970511B2 (ja) * 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
CN111788664B (zh) * 2018-03-01 2024-04-16 株式会社半导体能源研究所 半导体装置的制造方法
US11121263B2 (en) * 2019-08-27 2021-09-14 Apple Inc. Hydrogen trap layer for display device and the same
JP7534083B2 (ja) * 2019-11-26 2024-08-14 株式会社ジャパンディスプレイ 薄膜トランジスタの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021108405A (ja) 2010-09-13 2021-07-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2016184771A (ja) 2012-08-03 2016-10-20 株式会社半導体エネルギー研究所 半導体装置
JP2021141338A (ja) 2012-09-14 2021-09-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2014099601A (ja) 2012-10-19 2014-05-29 Semiconductor Energy Lab Co Ltd 酸化物半導体膜を含む多層膜及び半導体装置の作製方法
JP2021153196A (ja) 2013-09-23 2021-09-30 株式会社半導体エネルギー研究所 半導体装置
JP2018006730A (ja) 2016-02-12 2018-01-11 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を有する表示装置

Also Published As

Publication number Publication date
US20240178325A1 (en) 2024-05-30
KR20240079175A (ko) 2024-06-04
CN118099223A (zh) 2024-05-28
TW202422890A (zh) 2024-06-01
JP2024077307A (ja) 2024-06-07
TWI902041B (zh) 2025-10-21

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R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029120000

Ipc: H10D0030670000

R081 Change of applicant/patentee

Owner name: JAPAN DISPLAY INC., JP

Free format text: FORMER OWNER: JAPAN DISPLAY INC., TOKYO, JP

Owner name: IDEMITSU KOSAN CO., LTD., JP

Free format text: FORMER OWNER: JAPAN DISPLAY INC., TOKYO, JP

R016 Response to examination communication