JP2024077307A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2024077307A
JP2024077307A JP2022189329A JP2022189329A JP2024077307A JP 2024077307 A JP2024077307 A JP 2024077307A JP 2022189329 A JP2022189329 A JP 2022189329A JP 2022189329 A JP2022189329 A JP 2022189329A JP 2024077307 A JP2024077307 A JP 2024077307A
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JP
Japan
Prior art keywords
insulating layer
oxide
region
layer
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022189329A
Other languages
English (en)
Japanese (ja)
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JP2024077307A5 (https=
Inventor
創 渡壁
So Watakabe
将志 津吹
Masashi Tsubuki
俊成 佐々木
Toshinari Sasaki
尊也 田丸
Takaya Tamaru
真里奈 望月
Marina Mochizuki
涼 小野寺
Ryo Onodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2022189329A priority Critical patent/JP2024077307A/ja
Priority to TW112141932A priority patent/TWI902041B/zh
Priority to CN202311553939.6A priority patent/CN118099223A/zh
Priority to DE102023211597.2A priority patent/DE102023211597A1/de
Priority to US18/519,392 priority patent/US20240178325A1/en
Priority to KR1020230167823A priority patent/KR20240079175A/ko
Publication of JP2024077307A publication Critical patent/JP2024077307A/ja
Publication of JP2024077307A5 publication Critical patent/JP2024077307A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices

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  • Thin Film Transistor (AREA)
JP2022189329A 2022-11-28 2022-11-28 半導体装置 Pending JP2024077307A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2022189329A JP2024077307A (ja) 2022-11-28 2022-11-28 半導体装置
TW112141932A TWI902041B (zh) 2022-11-28 2023-11-01 半導體裝置
CN202311553939.6A CN118099223A (zh) 2022-11-28 2023-11-21 半导体器件
DE102023211597.2A DE102023211597A1 (de) 2022-11-28 2023-11-22 Halbleitervorrichtung
US18/519,392 US20240178325A1 (en) 2022-11-28 2023-11-27 Semiconductor device
KR1020230167823A KR20240079175A (ko) 2022-11-28 2023-11-28 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022189329A JP2024077307A (ja) 2022-11-28 2022-11-28 半導体装置

Publications (2)

Publication Number Publication Date
JP2024077307A true JP2024077307A (ja) 2024-06-07
JP2024077307A5 JP2024077307A5 (https=) 2025-12-01

Family

ID=91026369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022189329A Pending JP2024077307A (ja) 2022-11-28 2022-11-28 半導体装置

Country Status (6)

Country Link
US (1) US20240178325A1 (https=)
JP (1) JP2024077307A (https=)
KR (1) KR20240079175A (https=)
CN (1) CN118099223A (https=)
DE (1) DE102023211597A1 (https=)
TW (1) TWI902041B (https=)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050218407A1 (en) * 2003-08-18 2005-10-06 Yuki Matsuura Array substrate, liquid crystal display device and method of manufacturing array substrate
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102569412B (zh) * 2010-12-20 2015-02-04 京东方科技集团股份有限公司 薄膜晶体管器件及其制造方法
WO2012147657A1 (ja) * 2011-04-28 2012-11-01 シャープ株式会社 半導体装置、アクティブマトリクス基板、及び表示装置
EP2880690B1 (en) 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
TWI644434B (zh) * 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN109121438B (zh) 2016-02-12 2022-02-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
JP6970511B2 (ja) * 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
CN111788664B (zh) * 2018-03-01 2024-04-16 株式会社半导体能源研究所 半导体装置的制造方法
US11121263B2 (en) * 2019-08-27 2021-09-14 Apple Inc. Hydrogen trap layer for display device and the same
JP7534083B2 (ja) * 2019-11-26 2024-08-14 株式会社ジャパンディスプレイ 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
US20240178325A1 (en) 2024-05-30
DE102023211597A1 (de) 2024-05-29
KR20240079175A (ko) 2024-06-04
CN118099223A (zh) 2024-05-28
TW202422890A (zh) 2024-06-01
TWI902041B (zh) 2025-10-21

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