CN118099223A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN118099223A CN118099223A CN202311553939.6A CN202311553939A CN118099223A CN 118099223 A CN118099223 A CN 118099223A CN 202311553939 A CN202311553939 A CN 202311553939A CN 118099223 A CN118099223 A CN 118099223A
- Authority
- CN
- China
- Prior art keywords
- insulating layer
- oxide
- region
- semiconductor device
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
Landscapes
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022189329A JP2024077307A (ja) | 2022-11-28 | 2022-11-28 | 半導体装置 |
| JP2022-189329 | 2022-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118099223A true CN118099223A (zh) | 2024-05-28 |
Family
ID=91026369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311553939.6A Pending CN118099223A (zh) | 2022-11-28 | 2023-11-21 | 半导体器件 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240178325A1 (https=) |
| JP (1) | JP2024077307A (https=) |
| KR (1) | KR20240079175A (https=) |
| CN (1) | CN118099223A (https=) |
| DE (1) | DE102023211597A1 (https=) |
| TW (1) | TWI902041B (https=) |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050218407A1 (en) * | 2003-08-18 | 2005-10-06 | Yuki Matsuura | Array substrate, liquid crystal display device and method of manufacturing array substrate |
| US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| CN102569412B (zh) * | 2010-12-20 | 2015-02-04 | 京东方科技集团股份有限公司 | 薄膜晶体管器件及其制造方法 |
| WO2012147657A1 (ja) * | 2011-04-28 | 2012-11-01 | シャープ株式会社 | 半導体装置、アクティブマトリクス基板、及び表示装置 |
| EP2880690B1 (en) | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| TWI761605B (zh) | 2012-09-14 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| TWI644434B (zh) * | 2013-04-29 | 2018-12-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN109121438B (zh) | 2016-02-12 | 2022-02-18 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| JP6970511B2 (ja) * | 2016-02-12 | 2021-11-24 | 株式会社半導体エネルギー研究所 | トランジスタ |
| CN111788664B (zh) * | 2018-03-01 | 2024-04-16 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| US11121263B2 (en) * | 2019-08-27 | 2021-09-14 | Apple Inc. | Hydrogen trap layer for display device and the same |
| JP7534083B2 (ja) * | 2019-11-26 | 2024-08-14 | 株式会社ジャパンディスプレイ | 薄膜トランジスタの製造方法 |
-
2022
- 2022-11-28 JP JP2022189329A patent/JP2024077307A/ja active Pending
-
2023
- 2023-11-01 TW TW112141932A patent/TWI902041B/zh active
- 2023-11-21 CN CN202311553939.6A patent/CN118099223A/zh active Pending
- 2023-11-22 DE DE102023211597.2A patent/DE102023211597A1/de active Pending
- 2023-11-27 US US18/519,392 patent/US20240178325A1/en active Pending
- 2023-11-28 KR KR1020230167823A patent/KR20240079175A/ko active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20240178325A1 (en) | 2024-05-30 |
| DE102023211597A1 (de) | 2024-05-29 |
| KR20240079175A (ko) | 2024-06-04 |
| TW202422890A (zh) | 2024-06-01 |
| JP2024077307A (ja) | 2024-06-07 |
| TWI902041B (zh) | 2025-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102843075B1 (ko) | 반도체 장치 | |
| TWI858842B (zh) | 薄膜電晶體及電子機器 | |
| CN118099223A (zh) | 半导体器件 | |
| TWI857754B (zh) | 半導體裝置 | |
| US20260006828A1 (en) | Semiconductor device and manufacturing method thereof | |
| US20250380465A1 (en) | Semiconductor device and manufacturing method thereof | |
| KR102874839B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| US20240021668A1 (en) | Semiconductor device | |
| US20250113535A1 (en) | Semiconductor device | |
| US20250275187A1 (en) | Semiconductor device | |
| TW202410447A (zh) | 氧化物半導體膜、薄膜電晶體、及電子機器 | |
| KR20250117810A (ko) | 박막 트랜지스터 및 전자 기기 | |
| JP2024039361A5 (https=) | ||
| JPWO2024190115A5 (https=) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20250626 Address after: Tokyo, Japan Applicant after: JAPAN DISPLAY Inc. Country or region after: Japan Applicant after: IDEMITSU KOSAN Co.,Ltd. Address before: Tokyo, Japan Applicant before: JAPAN DISPLAY Inc. Country or region before: Japan |
|
| TA01 | Transfer of patent application right |