TWI902041B - 半導體裝置 - Google Patents

半導體裝置

Info

Publication number
TWI902041B
TWI902041B TW112141932A TW112141932A TWI902041B TW I902041 B TWI902041 B TW I902041B TW 112141932 A TW112141932 A TW 112141932A TW 112141932 A TW112141932 A TW 112141932A TW I902041 B TWI902041 B TW I902041B
Authority
TW
Taiwan
Prior art keywords
oxide
layer
insulating layer
region
oxide semiconductor
Prior art date
Application number
TW112141932A
Other languages
English (en)
Chinese (zh)
Other versions
TW202422890A (zh
Inventor
渡壁創
津吹将志
佐佐木俊成
田丸尊也
望月真里奈
小野寺涼
Original Assignee
日商日本顯示器股份有限公司
日商出光興產股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日本顯示器股份有限公司, 日商出光興產股份有限公司 filed Critical 日商日本顯示器股份有限公司
Publication of TW202422890A publication Critical patent/TW202422890A/zh
Application granted granted Critical
Publication of TWI902041B publication Critical patent/TWI902041B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices

Landscapes

  • Thin Film Transistor (AREA)
TW112141932A 2022-11-28 2023-11-01 半導體裝置 TWI902041B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022189329A JP2024077307A (ja) 2022-11-28 2022-11-28 半導体装置
JP2022-189329 2022-11-28

Publications (2)

Publication Number Publication Date
TW202422890A TW202422890A (zh) 2024-06-01
TWI902041B true TWI902041B (zh) 2025-10-21

Family

ID=91026369

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112141932A TWI902041B (zh) 2022-11-28 2023-11-01 半導體裝置

Country Status (6)

Country Link
US (1) US20240178325A1 (https=)
JP (1) JP2024077307A (https=)
KR (1) KR20240079175A (https=)
CN (1) CN118099223A (https=)
DE (1) DE102023211597A1 (https=)
TW (1) TWI902041B (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201501312A (zh) * 2013-04-29 2015-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US20180337289A1 (en) * 2016-02-12 2018-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20210005738A1 (en) * 2018-03-01 2021-01-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050218407A1 (en) * 2003-08-18 2005-10-06 Yuki Matsuura Array substrate, liquid crystal display device and method of manufacturing array substrate
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102569412B (zh) * 2010-12-20 2015-02-04 京东方科技集团股份有限公司 薄膜晶体管器件及其制造方法
WO2012147657A1 (ja) * 2011-04-28 2012-11-01 シャープ株式会社 半導体装置、アクティブマトリクス基板、及び表示装置
EP2880690B1 (en) 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN109121438B (zh) 2016-02-12 2022-02-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
US11121263B2 (en) * 2019-08-27 2021-09-14 Apple Inc. Hydrogen trap layer for display device and the same
JP7534083B2 (ja) * 2019-11-26 2024-08-14 株式会社ジャパンディスプレイ 薄膜トランジスタの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201501312A (zh) * 2013-04-29 2015-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US20180337289A1 (en) * 2016-02-12 2018-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20210005738A1 (en) * 2018-03-01 2021-01-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
US20240178325A1 (en) 2024-05-30
DE102023211597A1 (de) 2024-05-29
KR20240079175A (ko) 2024-06-04
CN118099223A (zh) 2024-05-28
TW202422890A (zh) 2024-06-01
JP2024077307A (ja) 2024-06-07

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