JP2024077307A5 - - Google Patents

Info

Publication number
JP2024077307A5
JP2024077307A5 JP2022189329A JP2022189329A JP2024077307A5 JP 2024077307 A5 JP2024077307 A5 JP 2024077307A5 JP 2022189329 A JP2022189329 A JP 2022189329A JP 2022189329 A JP2022189329 A JP 2022189329A JP 2024077307 A5 JP2024077307 A5 JP 2024077307A5
Authority
JP
Japan
Prior art keywords
semiconductor device
insulating layer
region
oxide
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022189329A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024077307A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2022189329A priority Critical patent/JP2024077307A/ja
Priority claimed from JP2022189329A external-priority patent/JP2024077307A/ja
Priority to TW112141932A priority patent/TWI902041B/zh
Priority to CN202311553939.6A priority patent/CN118099223A/zh
Priority to DE102023211597.2A priority patent/DE102023211597A1/de
Priority to US18/519,392 priority patent/US20240178325A1/en
Priority to KR1020230167823A priority patent/KR20240079175A/ko
Publication of JP2024077307A publication Critical patent/JP2024077307A/ja
Publication of JP2024077307A5 publication Critical patent/JP2024077307A5/ja
Pending legal-status Critical Current

Links

JP2022189329A 2022-11-28 2022-11-28 半導体装置 Pending JP2024077307A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2022189329A JP2024077307A (ja) 2022-11-28 2022-11-28 半導体装置
TW112141932A TWI902041B (zh) 2022-11-28 2023-11-01 半導體裝置
CN202311553939.6A CN118099223A (zh) 2022-11-28 2023-11-21 半导体器件
DE102023211597.2A DE102023211597A1 (de) 2022-11-28 2023-11-22 Halbleitervorrichtung
US18/519,392 US20240178325A1 (en) 2022-11-28 2023-11-27 Semiconductor device
KR1020230167823A KR20240079175A (ko) 2022-11-28 2023-11-28 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022189329A JP2024077307A (ja) 2022-11-28 2022-11-28 半導体装置

Publications (2)

Publication Number Publication Date
JP2024077307A JP2024077307A (ja) 2024-06-07
JP2024077307A5 true JP2024077307A5 (https=) 2025-12-01

Family

ID=91026369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022189329A Pending JP2024077307A (ja) 2022-11-28 2022-11-28 半導体装置

Country Status (6)

Country Link
US (1) US20240178325A1 (https=)
JP (1) JP2024077307A (https=)
KR (1) KR20240079175A (https=)
CN (1) CN118099223A (https=)
DE (1) DE102023211597A1 (https=)
TW (1) TWI902041B (https=)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050218407A1 (en) * 2003-08-18 2005-10-06 Yuki Matsuura Array substrate, liquid crystal display device and method of manufacturing array substrate
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102569412B (zh) * 2010-12-20 2015-02-04 京东方科技集团股份有限公司 薄膜晶体管器件及其制造方法
WO2012147657A1 (ja) * 2011-04-28 2012-11-01 シャープ株式会社 半導体装置、アクティブマトリクス基板、及び表示装置
SG11201505225TA (en) 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
TWI644434B (zh) * 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6970511B2 (ja) * 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
WO2017137869A1 (en) 2016-02-12 2017-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
KR102804116B1 (ko) * 2018-03-01 2025-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US11121263B2 (en) * 2019-08-27 2021-09-14 Apple Inc. Hydrogen trap layer for display device and the same
JP7534083B2 (ja) * 2019-11-26 2024-08-14 株式会社ジャパンディスプレイ 薄膜トランジスタの製造方法

Similar Documents

Publication Publication Date Title
JP2025003487A5 (https=)
JP2024023576A5 (ja) 半導体装置
US9601332B2 (en) Systems and method for ohmic contacts in silicon carbide devices
DE602008003796D1 (de) Tors mit einem oxidhalbleiter
JP2003347543A5 (https=)
JP2010087471A5 (https=)
JP2022183298A5 (https=)
RU2008143340A (ru) Аморфный оксид и полевой транзистор с его использованием
EP1770788A3 (en) Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP2010062536A5 (ja) 薄膜トランジスタ、及び当該薄膜トランジスタを有する表示装置
JP2009283915A5 (https=)
JP2005522034A5 (https=)
JP2011124557A5 (ja) 半導体装置
JP6192190B2 (ja) 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP2012227521A5 (https=)
JP2009278075A5 (https=)
JP2014120758A5 (https=)
JP2010186989A5 (https=)
WO2019033762A1 (zh) 晶体管、阵列基板及其制作方法、显示装置
JPH04107877A (ja) 半導体装置及びその製造方法
WO2019062738A1 (zh) 薄膜晶体管、阵列基板和显示装置
JP2004134687A5 (https=)
JP2004111479A5 (https=)
RU2010149479A (ru) Электронное переключающее устройство и способ изготовления этого устройства
WO2019157817A1 (zh) 一种具有折叠型复合栅结构的igbt芯片