WO2019033762A1 - 晶体管、阵列基板及其制作方法、显示装置 - Google Patents

晶体管、阵列基板及其制作方法、显示装置 Download PDF

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WO2019033762A1
WO2019033762A1 PCT/CN2018/081572 CN2018081572W WO2019033762A1 WO 2019033762 A1 WO2019033762 A1 WO 2019033762A1 CN 2018081572 W CN2018081572 W CN 2018081572W WO 2019033762 A1 WO2019033762 A1 WO 2019033762A1
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silicon oxide
layer
oxide layer
array substrate
silicon
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PCT/CN2018/081572
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English (en)
French (fr)
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李正亮
宁策
刘松
张文林
孙雪菲
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京东方科技集团股份有限公司
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Priority to EP18832974.2A priority Critical patent/EP3671824B1/en
Priority to US16/318,740 priority patent/US11024657B2/en
Publication of WO2019033762A1 publication Critical patent/WO2019033762A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

Definitions

  • the metal oxide TFT has the advantage of high carrier mobility, so that the TFT can It is very small, and the resolution of the flat panel display is high, and the display effect is good.
  • the metal oxide TFT also has a small leakage current, a low material and process cost, a low process temperature, a coating process, and a high transparency. The advantages of large band gaps have attracted the attention of the industry.
  • the present disclosure is directed to a transistor, an array substrate, a method of fabricating the same, and a display device.
  • a method of fabricating an array substrate comprising: depositing a plurality of silicon oxide layers on an active layer of a transistor; and depositing a silicon oxynitride layer over the plurality of silicon oxide layers .
  • a transistor comprising: an active layer; a plurality of silicon oxide layers on the active layer; and a silicon oxynitride layer on the plurality of silicon oxide layers.
  • an array substrate comprising a transistor array, wherein at least a portion of the transistors in the transistor array comprise: an active layer; a plurality of silicon oxide layers on the active layer; a silicon oxynitride layer on the plurality of silicon oxide layers.
  • a display device comprising the above array substrate according to the third aspect of the present disclosure.
  • FIG. 1 is a schematic flow chart of a method for fabricating an array substrate provided by the present disclosure
  • FIG. 2 is a partial structural schematic view of an array substrate provided by the present disclosure, which mainly shows a layered structure of a silicon oxide layer;
  • 3 is a content of hydrogen element in a channel region of an array substrate under different process conditions provided in the present disclosure
  • FIG. 8 is a schematic diagram of an array substrate structure provided by the present disclosure.
  • the material of the passivation layer is one of a silicon oxide film, a silicon nitride film or a silicon oxynitride film, and some hydrogen ions in the passivation layer are diffused into the oxide semiconductor layer.
  • the oxide semiconductor layer As a result, more hydrogen is generated in the oxide semiconductor layer, and excessive hydrogen causes the oxide semiconductor layer to be conductorized, thereby causing the TFT device to be short-circuited, which seriously affects the performance of the TFT product.
  • FIG. 4 shows a characteristic curve of a thin film transistor TFT fabricated according to the related art.
  • the tendency of the threshold voltage Vth to vary with Vds is: Vth to negative voltage as Vds increases The direction in which the value increases increases.
  • the TFT has a tendency to be conductorized.
  • FIG. 2 schematically illustrates a portion of a structure of a transistor in an array substrate in accordance with an embodiment of the present disclosure.
  • a silicon oxide layer 20 and a silicon nitride layer 30 on the silicon oxide layer 20 are formed on the active layer 10.
  • the silicon oxide layer 20 includes a first silicon oxide layer 21 and a second silicon oxide layer 22.
  • a method for fabricating an array substrate according to an embodiment of the present disclosure includes the following steps:
  • the silicon oxide layer 20 may include two or more silicon oxide layers. According to an embodiment of the present disclosure, the silicon oxide layer 20 may have two silicon oxide layers, and an array substrate structure including a two-layer structure silicon oxide layer. As shown in FIG. 2, the silicon oxide layer 20 may include a first silicon oxide layer 21. And a second silicon dioxide layer 22. According to an embodiment of the present disclosure, the step of depositing the silicon oxide layer 20 having a multilayer structure on the active layer may include:
  • a first silicon oxide layer 21 is deposited on the active layer 10.
  • the first silicon oxide layer 21 may be formed using a plasma enhanced chemical vapor deposition (PECVD) method using nitrous oxide and silane.
  • the silane may be, for example, monosilane, disilane, trisilane or the like.
  • nitrous oxide and monosilane are passed into a reaction chamber of a PECVD apparatus and the mass flow ratio of nitrous oxide is controlled to be in the range of 35:1 to 45:1.
  • a second silicon oxide layer 22 is deposited on the first silicon oxide layer 21. Similar to the manner in which the first silicon oxide layer 21 is formed in the above step, the second silicon oxide layer 22 can also be deposited by a PECVD method.
  • the hydrogen content in the first silicon oxide layer 21 is higher than the hydrogen content in the second silicon oxide layer 22.
  • the oxygen content in the first silicon oxide layer 21 is lower than the oxygen content in the second silicon oxide layer 22.
  • the hydrogen content and/or the oxygen content may be adjusted by, for example, controlling deposition conditions of the first silicon oxide layer 21 and the second silicon oxide layer 22.
  • the mass flow ratio of nitrous oxide and monosilane is controlled to be in the range of 75:1 to 85:1.
  • the silicon oxide layer 20 when the silicon oxide layer 20 is composed of two or more silicon oxide layers, hydrogen content in the first silicon oxide layer adjacent to the active layer among the plurality of silicon oxide layers Higher than the hydrogen content in other silicon oxide layers.
  • hydrogen content in the first silicon oxide layer adjacent to the active layer higher than the hydrogen content in other silicon oxide layers.
  • the oxygen content in the first silicon oxide layer is lower than that in the other silicon oxide layers, the higher oxygen content in the other silicon oxide layers enables formation of a dense silicon oxide film, thereby protecting the device from the outside. Pollution.
  • the thickness range of the first silicon oxide layer 21 adjacent to the active layer is
  • the thickness of the first silicon oxide layer may be The thickness of the first silicon oxide layer is greater than The oxide layer is formed to protect the active layer from contamination by other layers and the outside, and the thickness of the first silicon oxide layer is less than Hydrogen in the passivation layer is prevented from diffusing into the active layer, resulting in device conduction.
  • the thickness of the second silicon dioxide layer 22 is
  • the thickness of the second silicon dioxide layer may be The thickness of the second silicon dioxide layer is greater than To block the diffusion of hydrogen, thereby preventing the tendency of the device to be conductorized; and the thickness of the second silicon dioxide layer is less than To avoid introducing too much oxygen and affect device performance.
  • the silicon oxide layer may have a structure of two or more layers.
  • a third silicon oxide layer (not shown) may be formed between the first silicon oxide layer 21 and the second silicon oxide layer 22 as shown in FIG. 2.
  • the first silicon oxide layer, the third silicon oxide layer, and the second silicon oxide layer may be sequentially formed on the active layer 10.
  • the third silicon oxide layer can also be prepared by, for example, PECVD.
  • a third silicon oxide layer can be deposited using nitrous oxide and a monosilane gas having a mass flow ratio of 45:1 to 75:1.
  • the first silicon oxide layer is made of nitrous oxide and monosilane having a mass flow ratio of 40:1, and the second silicon oxide layer has a mass flow ratio of 80: 1 made of nitrous oxide and monosilane.
  • the third silicon oxide layer itself may further include one or more layers of a silicon oxide structure.
  • the third silicon oxide layer may include three silicon oxide layers, each layer employing different deposition conditions.
  • the mass flow ratio of nitrous oxide and monosilane is gradually increased or decreased.
  • the mass flow ratios of nitrous oxide and monosilane are 50:1, 60:1, and 70:1, respectively, thereby forming three silicon oxide layers of the third silicon oxide layer. .
  • the third silicon oxide layer deposited by the above conditions has a lower hydrogen content and an increased oxygen content than the first silicon oxide layer, and acts similarly to the second silicon oxide layer to further prevent the first silicon oxide layer.
  • the hydrogen in the diffusion diffuses into the active layer, thereby avoiding causing the device to be conductorized.
  • a silicon oxynitride layer 30 can be formed over the silicon oxide layer.
  • the silicon oxynitride layer can be formed by subjecting the previously formed silicon oxide layer to nitrogen doping or nitriding treatment.
  • the nitridation process can be performed by heat treatment nitridation, chemical deposition or physical deposition.
  • a silicon oxide layer is first prepared by plasma enhanced chemical vapor deposition, the deposition temperature may be, for example, 200 to 350 ° C, and the reaction gas is, for example, nitrous oxide and silane, and oxidized
  • the mass flow ratio of nitrogen to silane gas is from 60:1 to 100:1, for example, the mass flow ratio of nitrous oxide to silane may be 70:1.
  • the ratio of the deposition process to the reaction gas is to obtain a dense silicon dioxide film for blocking the diffusion of hydrogen in the silicon oxynitride layer, even if the annealing temperature is higher than 250 ° C, the dense silicon dioxide film obtained by the method It also blocks the diffusion of hydrogen in the silicon oxynitride layer. Then, the obtained silicon oxide film is subjected to nitriding treatment, for example, heat treatment nitriding, and the gas used for nitriding is one or more of N 2 O, NO or NH 3 .
  • nitriding treatment for example, heat treatment nitriding
  • the gas used for nitriding is one or more of N 2 O, NO or NH 3 .
  • chemical or physical deposition methods such as low energy ion implantation, jet vapor deposition, atomic layer deposition, plasma nitridation, and the like can also be employed.
  • the silicon oxynitride layer may also be annealed at an annealing temperature of not higher than 250 ° C to reduce diffusion of hydrogen in the silicon oxynitride layer.
  • the silicon oxide layer and the silicon oxynitride layer described in the present disclosure constitute a passivation layer of the array substrate.
  • the passivation layer in the prior art is one of a silicon nitride (SiNx) layer, a silicon oxynitride (SiON) layer, and a silicon oxide (SiOx) layer.
  • the passivation layer provided by the present disclosure adopts a structure in which a silicon oxide layer is combined with a silicon oxynitride layer, and the silicon oxide layer has a multi-layer structure, and different layers are fabricated by using different process conditions to ensure oxidation protection of the layer. At the same time as the film, hydrogen is prevented from diffusing from the passivation layer to the oxide semiconductor layer.
  • the passivation layer adopts a composite structure, which can not only form an oxide film on the surface of the active layer to isolate the device from the external environment, but also set the process conditions of the plurality of silicon oxide layers to effectively block the hydrogen direction in the passivation layer.
  • the active layer is diffused.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • Mo molybdenum
  • MoTi molybdenum titanium alloy
  • Cu copper
  • silver Ag
  • gold Au
  • Ti Any one of zirconium (Zr), yttrium (Th), vanadium (V), palladium (Pd), nickel (Ni), and tin (Sn) materials is specifically used to make a hydrogen barrier layer, and the present disclosure is only changed by
  • the structure and deposition conditions of the passivation layer can achieve the purpose of blocking hydrogen diffusion from the passivation layer to the oxide semiconductor, which is simple and easy to implement, and does not need to additionally add a barrier layer containing these rare elements, thereby reducing the production cost.
  • FIG. 8 shows a schematic diagram of an array substrate in accordance with an embodiment of the present disclosure.
  • the array substrate may include a gate electrode 300, an active layer 400, a passivation layer 200, a common electrode 100, and a pixel electrode 500.
  • the passivation layer includes a layer away from the common electrode in the active layer.
  • the silicon oxide layer 20 and the silicon oxynitride layer 30 are sequentially stacked on the side, wherein the silicon oxide layer 20 has a multilayer structure. For the sake of clarity, only one transistor is shown in the array substrate of Figure 8, but those skilled in the art will appreciate that an array substrate is typically provided with an array of multiple transistors.
  • the active layer may be a metal oxide semiconductor such as indium gallium zinc oxide (IGZO), zinc indium oxide (ZIO), zinc gallium oxide (ZGO), and zinc tin oxide (ZTO).
  • IGZO indium gallium zinc oxide
  • ZIO zinc indium oxide
  • ZGO zinc gallium oxide
  • ZTO zinc tin oxide
  • the active layer is IGZO.
  • the structure of an oxide thin film transistor mainly includes three types: an etch barrier type (ESL), a back channel etch type (BCE), and a coplanar type.
  • ESL etch barrier type
  • BCE back channel etch type
  • coplanar type the side of the semiconductor active layer close to the insulating layer is affected by the etching liquid or the etching gas during the source and drain etching processes, thereby affecting the characteristics of the semiconductor active layer.
  • the ESL structure requires a lithography process to be added to the BCE structure, resulting in higher equipment input costs and longer production cycles.
  • the array substrate provided by the present disclosure is a 4mask or 5mask device.
  • the array substrate shown in FIG. 8 is fabricated by using five masks (5 mask), and the steps of fabricating the 5mask array substrate are as follows:
  • Step 1 depositing a conductive layer on the substrate, forming a conductive common electrode by a patterning process
  • Step 2 depositing a gate metal film on the substrate on which the step 1 is completed, and forming a pattern including a gate electrode by a patterning process;
  • Step 3 forming a pattern of the active layer by a patterning process on the substrate on which the step 2 is completed;
  • Step 4 forming a passivation layer on the substrate on which step 3 is completed;
  • Step 5 depositing a conductive layer on the substrate on which step 4 is completed, and forming a conductive pixel electrode by a patterning process.
  • the TFT fabricated in the reticle of the common electrode in step 1 and the gate in step 2 is a 4 mask device.
  • the silicon oxide layer includes two or more layers.
  • the silicon oxide layer is a two-layer structure, and the silicon oxide layer includes: a first silicon oxide layer adjacent to the active layer and a side of the first silicon oxide layer away from the active layer
  • the first silicon oxide layer is made of nitrous oxide and silane having a mass flow ratio ranging from 35:1 to 45:1, and in one example, a mass flow ratio of 40 is used: Nitrogen trioxide and silane; the first silicon oxide layer prepared at a ratio of the reaction gas is close to the active layer, capable of blocking diffusion of hydrogen in the layer into the active layer, and the formed silicon oxide film can be realized The purpose of protecting the transistor.
  • the second silicon dioxide layer is made of nitrous oxide and silane having a mass flow ratio ranging from 75:1 to 85:1. In one example, nitrous oxide having a mass flow ratio of 80:1 is used. And silane.
  • the hydrogen content of the second silicon oxide layer is lowered, and the oxygen content is increased, so that hydrogen of the second silicon oxide layer is difficult to diffuse into the first silicon oxide layer even if the first oxidation
  • the diffusion of hydrogen in the silicon layer also diffuses to the second silicon dioxide layer containing less hydrogen, further blocking the diffusion of hydrogen in the first silicon oxide layer to the active layer, and the increase in oxygen content enables formation in the layer.
  • a dense silicon oxide film is used to protect the device from external contamination.
  • the thickness of the first silicon oxide layer is for example, the thickness of the first silicon oxide layer can be The thickness of the first silicon oxide layer is usually greater than The oxide layer is formed to protect the active layer from contamination by other layers and the outside, and the thickness of the first silicon oxide layer is usually less than The diffusion of hydrogen in the passivation layer to the active layer is avoided, resulting in device conduction.
  • the thickness of the second silicon dioxide layer is The thickness of the second silicon dioxide layer may be The thickness of the second silicon dioxide layer is usually greater than To block the diffusion of hydrogen in the passivation layer, thereby preventing the tendency of the device to be conductorized; and the thickness of the second silicon dioxide layer is usually less than To avoid introducing too much oxygen and affect device performance.
  • the silicon oxide layer includes two or more layers, and the silicon oxide layer includes: a first silicon oxide layer adjacent to the active layer, and a side of the first silicon oxide layer away from the active layer a stacked third silicon oxide layer and a second silicon oxide; the first silicon oxide layer is made of nitrous oxide and silane having a mass flow ratio of between 35:1 and 45:1; The silicon layer is made of nitrous oxide and silane having a mass flow ratio of between 45:1 and 75:1, wherein the third silicon oxide layer is a layered structure of at least one layer; the second silicon dioxide layer is composed of mass The flow ratio is made between nitrous oxide and silane between 75:1 and 85:1.
  • the first silicon oxide layer is made of nitrous oxide and monosilane having a mass flow ratio of 40:1
  • the second silicon oxide layer has a mass flow ratio of 40: 1 made of nitrous oxide and monosilane.
  • the third silicon oxide layer comprises one or more layers of silicon oxide structures made of nitrous oxide and monosilane having a mass flow ratio of between 45:1 and 75:1, such as nitrous oxide and silane.
  • the gas mass flow ratio may be a 60:1 layer of silicon oxide structure, or a multilayer silicon oxide structure formed by increasing or decreasing according to the ratio, for example, the third silicon oxide layer includes a three-layer structure including nitrous oxide.
  • the reaction ratio with silane is a three-layer structure of 50:1, 60:1, and 70:1, respectively.
  • the content of hydrogen element in the channel region under different process conditions provided by the embodiments of the present disclosure is as shown in FIG. 3, when the mass flow ratio of nitrous oxide and monosilane is 40:1 (annealing temperature 250 ° C), the channel layer The content of hydrogen in the medium is about half an order of magnitude higher than the mass flow ratio of nitrous oxide and silane of 80:1 (annealing temperature 250 ° C). However, when the mass flow ratio of nitrous oxide and silane is 40:1, and the annealing temperature of the passivation layer is 170 ° C, the hydrogen content in the channel layer is greatly reduced. It is indicated that lowering the annealing temperature can largely block the diffusion of hydrogen in the passivation layer to the active layer.
  • FIG. 6 is a view showing the content and existence state of hydrogen in the channel region of the TFT device using the TFT fabricated by the prior art before the process conditions provided by the present disclosure.
  • the passivation layer of the TFT device of FIG. 6 includes only one silicon oxide layer, and the thickness of the silicon oxide layer is It is obtained by depositing nitrous oxide and monosilane gas at a mass flow ratio of 30:1.
  • the excess hydrogen is mostly combined with oxygen in the channel region, exists in the form of a hydroxyl group, and is uniformly distributed in the channel region.
  • FIG. 7 illustrates the content and state of hydrogen in the channel region of a TFT device fabricated in accordance with one embodiment of the present disclosure.
  • the passivation layer includes two silicon oxide layers and one silicon oxynitride layer, wherein the thickness of the first silicon oxide layer adjacent to the active layer is It is obtained by depositing nitrous oxide and monosilane gas at a mass flow ratio of 40:1, and the thickness of the second silicon dioxide layer is It is obtained by depositing nitrous oxide and monosilane gas at a mass flow ratio of 80:1.
  • the content of the hydroxyl group approaches zero, that is, the channel region of the active layer contains substantially no hydroxyl groups, indicating that changing the structure and process conditions of the passivation layer can effectively block hydrogen from flowing to the active layer. Diffusion.
  • FIG. 5 is a characteristic diagram of performance testing of the exemplary TFT device of FIG. 7.
  • FIG. 5 It can be seen from Fig. 5 that the Vth of the oxide thin film transistor has a negative bias with Vds, but when Vds is from 5.1V to 15.1V, the Vth of the oxide thin film transistor does not change substantially with the change of Vds, indicating that the passivation is changed.
  • the treatment of the layer to block the diffusion of hydrogen to the oxide conductor layer greatly improves the performance of the oxide thin film transistor.
  • the present disclosure also provides a display device including the above array substrate.
  • the embodiment of the present disclosure further provides a display device, including the above array substrate, and the display device may be: a display panel, a liquid crystal panel, an electronic paper, an OLED panel, a liquid crystal television, a liquid crystal display, a digital photo frame, a mobile phone, a tablet computer, or the like.
  • a display panel including the above array substrate
  • the display device may be: a display panel, a liquid crystal panel, an electronic paper, an OLED panel, a liquid crystal television, a liquid crystal display, a digital photo frame, a mobile phone, a tablet computer, or the like.
  • a product or part that has a display function may be: a display panel, a liquid crystal panel, an electronic paper, an OLED panel, a liquid crystal television, a liquid crystal display, a digital photo frame, a mobile phone, a tablet computer, or the like.
  • the display device Since the display device is improved on the basis of the array substrate, the display device naturally inherits all the advantages of the array substrate.
  • the present disclosure has the following advantages:
  • the present disclosure provides an array substrate and a manufacturing method thereof for the problem that the thin film transistor is easily short-circuited due to excessive hydrogen element in the active layer, and the existing single-layer passivation layer adopts a silicon oxide layer having a multi-layer structure.
  • a structure composited with a silicon oxynitride layer, and the multilayer structure in the silicon oxide layer is fabricated using different process conditions.
  • the passivation layer adopts a composite structure of a silicon oxide layer and a silicon oxynitride layer, which can enhance the protection effect of the passivation layer on the device, and different layers of the silicon oxide layer are formed to block the diffusion of hydrogen in the passivation layer.
  • the process is simple, and can effectively block the diffusion of hydrogen in the passivation layer to the active layer, and solve the device short circuit problem caused by the excess of hydrogen in the active layer.
  • the first silicon oxide layer is made of nitrous oxide and silane in a ratio ranging from 35:1 to 45:1, and the first silicon oxide layer prepared at the reaction gas ratio can block the first silicon oxide layer. Hydrogen in the layer diffuses into the active layer, and the formed silicon oxide film can achieve the purpose of protecting the device; the second silicon dioxide layer is composed of nitrous oxide and a ratio ranging from 75:1 to 85:1.
  • the silane is formed, and the hydrogen content of the second silicon oxide layer is lower than that of the first silicon oxide layer, and the oxygen content is increased, so that the hydrogen of the second silicon oxide layer is hard to diffuse into the first silicon oxide layer, even if The diffusion of hydrogen in the first silicon oxide layer also diffuses to the second silicon dioxide layer containing less hydrogen, further blocking the diffusion of hydrogen in the first silicon oxide layer to the active layer, and the increase in oxygen content causes This layer is capable of forming a dense silicon oxide film for protecting the device from external contamination.
  • the reaction gases of the plurality of silicon oxide layers are the same, and the same deposition method and device can be utilized to reduce the complexity of the process. Sex and production costs.

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Abstract

本公开提供一种晶体管、阵列基板及其制作方法、显示装置。该阵列基板的制作方法包括：在晶体管的有源层（10）上沉积多个氧化硅层（20）；在多个氧化硅层之上沉积氮氧化硅层（30）。

Description

晶体管、阵列基板及其制作方法、显示装置
相关申请的交叉引用
本公开要求2017年8月18日提交的申请号为201710710353.4的中国发明专利申请的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，尤其涉及一种晶体管、阵列基板及其制作方法、显示装置。
背景技术
目前，随着技术的发展，出现了采用金属氧化物作为有源层材料的金属氧化物薄膜晶体管(Thin Film Transistor，TFT)，金属氧化物TFT具有载流子迁移率高的优点，使得TFT可以做的很小，而使平板显示器的分辨率高，显示效果好；同时用金属氧化物TFT还具有漏电流小、材料和工艺成本降低、工艺温度低、可利用涂布工艺、透明率高、带隙大等优点，备受业界关注。
发明内容
本公开旨在提供一种晶体管、阵列基板及其制作方法、显示装置。
根据本公开的第一方面，提供了一种阵列基板的制作方法，包括：在晶体管的有源层上沉积多个氧化硅层；以及在所述多个氧化硅层之上沉积氮氧化硅层。
根据本公开的第二方面，提供了一种晶体管，包括：有源层；在所述有源层上的多个氧化硅层；以及在所述多个氧化硅层上的氮氧化硅层。
根据本公开的第三方面，提供了一种阵列基板，包括晶体管阵列，其中所述晶体管阵列中的至少一部分晶体管包括：有源层；在所述有源层上的多个氧化硅层；以及在所述多个氧化硅层上的氮氧化硅层。
根据本公开的第四方面，提供了一种显示装置，包括上述根据本公开的第三方面的阵列基板。
附图说明
图1为本公开提供的阵列基板的制作方法的流程示意图；
图2为本公开提供的阵列基板的局部结构示意图，其主要展示了氧化硅层的分层结构；
图3为本公开中提供的不同工艺条件下阵列基板的沟道区中氢元素的含量；
图4为采用现有方法制作TFT的特性曲线；
图5为采用本公开提供的制作方法制作的TFT的特性曲线；
图6为采用现有方法制作出的TFT沟道区氢的含量及存在状态；
图7为采用本公开提供的制作方法制作的TFT沟道区氢的含量及存在状态；
图8为本公开提供的阵列基板结构的示意图。
具体实施方式
下面结合附图和示例性实施例对本公开作进一步地描述，其中附图中相同的标号全部指的是相同的部件。此外，如果已知技术的详细描述对于示出本公开的特征是不必要的，则将其省略。
现有的金属氧化物TFT中，钝化层的材料为氧化硅薄膜、氮化硅薄膜或氮氧化硅薄膜中的一种，钝化层中的部分氢离子会扩散到氧化物半导体层中，导致氧化物半导体层中的氢较多，过多的氢会导致氧化物半导体层导体化，从而使TFT器件易发生短路，严重影响到TFT产品性能。
例如，图4示出了根据现有技术制造的薄膜晶体管TFT的特性曲线。如图4所示，在源极和漏极之间的电压Vds分别为5.1V和15.1V的情况下，阈值电压Vth随着Vds变化的趋势为：Vth随着Vds的增大而向负电压值增大的方向移动。此外，从图4中的源极和漏极之间的电流I DS的变化也可以看出，TFT出现了导体化趋势。
图2示意性地示出了根据本公开的一个实施例的阵列基板中的晶体管的结构的一部分。如图2所示，在有源层10上形成有氧化硅层20和位于氧化硅层20上的氮化硅层30。其中，氧化硅层20包括第一氧化硅层21和第二氧化硅层22。下面将结合图1具体描述该阵列基板的制作方法的示例。
如图1所示，根据本公开实施例提供一种阵列基板的制作方法，包括如下步骤：
S10，在晶体管的有源层10上沉积具有多层结构的氧化硅层20；
S20，在所述氧化硅层20之上沉积氮氧化硅层30。
所述氧化硅层20可以包括两个或更多个的氧化硅层。根据本公开的一个实施例，氧化硅层20可以具有两个氧化硅层，包括两层结构氧化硅层的阵列基板结构示意图如图2所示，氧化硅层20可以包括第一氧化硅层21和第二氧化硅层22。根据本公开的一个实施例，在有源层上沉积具有多层结构的氧化硅层20的步骤可以包括：
在所述有源层10上沉积第一氧化硅层21。例如，可以采用等离子增强的化学气相沉积(PECVD)方法，利用一氧化二氮和硅烷形成所述第一氧化硅层21。其中，硅烷可以是例如甲硅烷、乙硅烷、丙硅烷等。在一个示例性示例中，将一氧化二氮和甲硅烷通入PECVD设备的反应室中，并且控制一氧化二氮的质量流量比在35：1至45：1的范围内。
然后，在所述第一氧化硅层21上沉积第二氧化硅层22。与上面步骤中形成第一氧化硅层21的方式类似，也可以采用PECVD方法沉积第二氧化硅层22。
在根据本公开的一些实施例中，第一氧化硅层21中的氢含量高于第二氧化硅层22中的氢含量。在根据本公开的另一些实施例中，第一氧化硅层21中的氧含量低于第二氧化硅层22中的氧含量。
在一些示例中，可以通过例如控制第一氧化硅层21和第二氧化硅层22的沉积条件来调节氢含量和/或氧含量。例如，在使用PECVD沉积第二氧化硅层22的过程中，控制一氧化二氮和甲硅烷的质量流量比在75：1至85：1的范围内。这样，可以确保第二氧化硅层22中的氢含量低于第一氧化硅层21中的氢含量，并且第二氧化硅层22中的氧含量高于第一氧化硅层21中的氧含量。
在根据本公开的一些实施例中，当氧化硅层20由两个或更多个氧化硅层构成时，多个氧化硅层中与有源层相邻的第一氧化硅层中的氢含量高于其它氧化硅层中的氢含量。这样，即使第一氧化硅层发生氢的扩散，也会向含有更少的氢的其它氧化硅层扩散，从而阻止了第一氧化硅层中的氢向有源层扩散，避免了晶体管的导体化。此外，当第一氧化硅层中的氧含量低于其它氧化硅层中的氧含量时，其它氧化硅层中的较高含氧量使得能够形成致密的氧化硅薄膜，从而保护器件免受外界的污染。
在根据本公开的一些实施例中，邻近有源层的第一氧化硅层21的厚度范围是
Figure PCTCN2018081572-appb-000001
例如第一氧化硅层的厚度可以为
Figure PCTCN2018081572-appb-000002
所述第一氧化硅层的厚度大于
Figure PCTCN2018081572-appb-000003
以形成氧化保护膜保护有源层免受其他层及外界的污染，该第一氧化硅层的厚度小于
Figure PCTCN2018081572-appb-000004
避免钝化层中的氢向有源层扩散，导致器件导体化。
在根据本公开的一些实施例中，所述第二氧化硅层22的厚度范围是
Figure PCTCN2018081572-appb-000005
例如所述第二氧化硅层的厚度可以为
Figure PCTCN2018081572-appb-000006
所述第二氧化硅层的厚度大于
Figure PCTCN2018081572-appb-000007
以阻挡氢的扩散，进而阻止器件导体化趋势；且所述第二氧化硅层的厚度小于
Figure PCTCN2018081572-appb-000008
以避免引入过多的氧而影响器件性能。
在根据本公开的另一种实施例中，所述氧化硅层可以具有两层以上结构。例如，可以在如图2所示的第一氧化硅层21和第二氧化硅层22之间形成有第三氧化硅层(未示出)。其中，可以在有源层10上依次形成第一氧化硅层、第三氧化硅层和第二氧化硅层。第三氧化硅层也可以采用例如PECVD方式制备。例如，可以利用质量流量比为45：1至75：1的一氧化二氮和甲硅烷气体来沉积第三氧化硅层。
在根据本公开的一些实施例中，所述第一氧化硅层由质量流量比为40：1的一氧化二氮和甲硅烷制成，所述第二氧化硅层由质量流量比为80：1的一氧化二氮和甲硅烷制成。所述第三氧化硅层本身还可以包括一层或多层氧化硅结构。例如，第三氧化硅层可以包括三个氧化硅层，每一层采用不同的沉积条件。比如，在PECVD的过程中，使一氧化二氮和甲硅烷的质量流量比逐渐递增或递减。例如，在一个示例性实施例中，一氧化二氮和甲硅烷的质量流量比分别为50：1、60：1和70：1，从而形成第三氧化硅层的三个氧化硅层。。
采用上述条件沉积的第三氧化硅层，与所述第一氧化硅层相比，含氢量降低，含氧量增多，作用与第二氧化硅层相似，都能进一步防止第一氧化硅层中的氢向有源层扩散，进而避免引起器件导体化。
最后，可以在氧化硅层之上形成氮氧化硅层30。
具体地，氮氧化硅层可以通过对预先形成的氧化硅层进行氮掺杂或氮化处理而形成。氮化的工艺可以采用热处理氮化、化学沉积或物理沉积的方式。例如，在根据本公开的一个实施例中，先采用等离子体增强的化学气相沉积制备氧化硅层，沉积温度可以为例如200-350℃，反应气体为例如一氧化二氮与硅烷，一氧化二氮与硅烷气体的质量流量比为60：1至100：1，例如一氧化二氮与硅烷的质量流量比可以为70：1。采用该沉积工艺和反应气体的比例是为了获取致密的二氧化硅薄膜，用于阻挡氮氧化硅层中氢的扩散，即使退火温度高于250℃，由该种方法获取的致密二氧化硅薄膜也能阻挡氮氧化硅层中氢的扩散。然后，对得到的二氧化硅薄膜进行氮化处理，例如可以采用热处理 氮化，氮化采用的气体为N 2O,NO或NH 3中的一种或几种。另外，也可以采用化学或物理沉积方式，比如低能量的离子注入、喷射式蒸汽沉积、原子层沉积、等离子体氮化等。
根据本公开的一些实施例，还可以对所述氮氧化硅层进行退火处理，退火温度不高于250℃，以减少氮氧化硅层中氢的扩散。
值得说明的是，本公开中所述的氧化硅层和氮氧化硅层组成了阵列基板的钝化层。
现有技术中钝化层是氮化硅(SiNx)层、氮氧化硅(SiON)层和氧化硅(SiOx)层中的一种。本公开提供的钝化层采用氧化硅层与氮氧化硅层复合的结构，将所述氧化硅层具有多层结构，且不同层采用不完全相同的工艺条件制作，保证该层在形成氧化保护膜的同时，阻挡氢自钝化层扩散向氧化物半导体层。
钝化层采用复合结构，不仅能够在有源层表面形成氧化物薄膜以实现将器件与外部环境的隔离开的同时，同时设置多层氧化硅层的工艺条件有效阻挡钝化层中的氢向有源层扩散。
与现有的专门设置包括氧化铟锡(ITO)、氧化铟锌(IZO)、钼(Mo)、钼钛合金(MoTi)、铜(Cu)、银(Ag)、金(Au)、Ti、锆(Zr)、钍(Th)、钒(V)、钯(Pd)、镍(Ni)和锡(Sn)材料中任一种专门用来制作作氢阻挡层相比，本公开仅通过改变钝化层的结构和沉积条件即可达到阻挡氢自钝化层扩散向氧化物半导体的目的，简单易实现，无需另外添加含有这些稀有元素的阻挡层，降低生产成本。
图8示出了根据本公开的一个实施例的阵列基板的示意图。如图8所示，该阵列基板可以包括栅极300、有源层400、钝化层200、公共电极100、像素电极500，所述钝化层包括在所述有源层远离公共电极的一侧依次层叠氧化硅层20和氮氧化硅层30，其中，所述氧化硅层20具有多层结构。为了清楚起见，图8中的阵列基板中仅示出了一个晶体管，但是本领域技术人员应当理解，阵列基板上通常具有由多个晶体管形成的阵列。
根据本公开的一个实施例，所述有源层可以为金属氧化物半导体，例如氧化铟镓锌(IGZO)、氧化锌铟(ZIO)、氧化锌镓(ZGO)和氧化锌锡(ZTO)中的一种。在一个示例中，所述有源层为IGZO。
目前氧化物薄膜晶体管(TFT)的结构主要有刻蚀阻挡型(ESL)、背沟道刻蚀型(BCE)和共面型三种类型。BCE结构中，半导体有源层靠近绝缘层一侧在源极和漏极刻蚀成型工艺时受到刻蚀液体或者刻蚀气体的影响，从而影响半导体有源层的特性。ESL结构比BCE结构需要增加一道光刻工艺，设备投入成本更高，生产周期更长。
因此，图8示出的根据本公开的实施例的阵列基板中采用BCE类型的薄膜晶体管。本公开提供的阵列基板是4mask或5mask器件。图8所示的阵列基板采用五道掩模版(5mask)制作，制作5mask阵列基板的步骤如下：
步骤1，在基板上沉积导电层，通过构图工艺形成导电公共电极；
步骤2，在完成步骤1的基板上沉积栅金属膜，通过构图工艺形成包括栅极的图案；
步骤3，在完成步骤2的基板上通过构图工艺形成有源层的图案；
步骤4，在完成步骤3的基板上形成钝化层；
步骤5，在完成步骤4的基板上沉积导电层，通过构图工艺形成导电像素电极。
将步骤1中的公共电极和步骤2中的栅极用一道掩模版制作出的TFT则为4mask器件。
所述氧化硅层包括两层或两层以上结构。
在本公开的一些实施例中，氧化硅层为两层结构，所述氧化硅层包括：靠近有源层的第一氧化硅层及设于所述第一氧化硅层远离有源层一侧的第二氧化硅；所述第一氧化硅层由质量流量比范围在35:1-45:1之间的一氧化二氮和硅烷制成，在一个示例中，采用质量流量比为40：1的一氧化二氮和硅烷；以该反应气体比例制备的所述第一氧化硅层靠近有源层，能够阻挡该层中的氢向有源层中扩散，且形成的氧化硅薄膜能够实现保护晶体管的目的。
所述第二氧化硅层由质量流量比范围在75:1-85:1之间的一氧化二氮和硅烷制成，在一个示例中，采用质量流量比为80：1的一氧化二氮和硅烷。与所述第一氧化硅层相比，第二氧化硅层的含氢量降低，含氧量增多，则第二氧化硅层的氢难以向第一氧化硅层扩散，即使所述第一氧化硅层发生氢的扩散，也会向含有更少氢的第二氧化硅层扩散，进一步阻挡了第一氧化硅层中的氢向有源层扩散，而且含氧量增多使得在该层能够形成致密的氧化硅薄膜用于保护器件免受外界的污染。
所述第一氧化硅层的厚度范围是
Figure PCTCN2018081572-appb-000009
如第一氧化硅层的厚度可以为
Figure PCTCN2018081572-appb-000010
所述第一氧化硅层的厚度通常大于
Figure PCTCN2018081572-appb-000011
以形成氧化保护膜保护有源层免受其他层及外界的污染，该第一氧化硅层的厚度通常小于
Figure PCTCN2018081572-appb-000012
以避免钝化层中的氢向有源层扩散，导致器件导体化。
所述第二氧化硅层的厚度范围是
Figure PCTCN2018081572-appb-000013
如所述第二氧化硅层的厚度可以为
Figure PCTCN2018081572-appb-000014
所述第二氧化硅层的厚度通常大于
Figure PCTCN2018081572-appb-000015
以阻挡钝化层中氢的扩散，进而阻止 器件导体化趋势；且所述第二氧化硅层的厚度通常小于
Figure PCTCN2018081572-appb-000016
以避免引入过多的氧而影响器件性能。
本公开另一种实施例中氧化硅层包括两层以上结构，所述氧化硅层包括：靠近有源层的第一氧化硅层、在所述第一氧化硅层远离有源层一侧依次层叠的第三氧化硅层及第二氧化硅；所述第一氧化硅层由质量流量比在35:1-45:1之间的一氧化二氮和硅烷制成；所述第三层氧化硅层由质量流量比在45：1-75：1之间的一氧化二氮和硅烷制成，其中第三氧化硅层为至少一层的层状结构；所述第二氧化硅层由质量流量比在75:1-85:1之间的一氧化二氮和硅烷制成。
在根据本公开的一个实施例中，所述第一氧化硅层由质量流量比为40：1的一氧化二氮和甲硅烷制成，所述第二氧化硅层由质量流量比为40：1的一氧化二氮和甲硅烷制成。所述第三氧化硅层包括由质量流量比在45：1-75：1之间的一氧化二氮和甲硅烷制成的一层或多层氧化硅结构，比如一氧化二氮和硅烷的气体的质量流量比可以为60：1的一层氧化硅结构，或者是按照该比例的递增或递减形成的多层氧化硅结构，如第三氧化硅层包括三层结构，包括一氧化二氮和硅烷反应比例分别为50：1、60：1、70：1的三层结构。
下面结合实验结果对本公开实施例中的器件性能进行说明。
本公开实施例提供的不同工艺条件下沟道区中氢元素的含量如图3所示，一氧化二氮和甲硅烷的质量流量比为40：1时(退火温度250℃)，沟道层中氢的含量比一氧化二氮和硅烷的质量流量比为80：1时(退火温度250℃)多了半个数量级左右。但一氧化二氮和硅烷的质量流量比为40：1，且钝化层的退火温度为170℃时，沟道层中氢的含量大大降低。说明降低退火温度能很大程度上阻挡钝化层中的氢向有源层扩散。
图6为采用本公开提供的工艺条件之前即采用现有技术制作出的TFT，TFT器件沟道区中氢的含量及存在状态。图6中的TFT器件的钝化层只包含一层氧化硅层，并且该氧化硅层的厚度为
Figure PCTCN2018081572-appb-000017
由一氧化二氮和甲硅烷气体按照质量流量比30：1进行沉积得到。由图6可知，过量的氢在沟道区中大多与氧结合，以氢氧基的形态存在，且均匀分布在沟道区。
图7示出了根据本公开的一个实施例制造的TFT器件沟道区中氢的含量及存在状态。在该实施例中，钝化层包括两个氧化硅层和一个氮氧化硅层，其中，与有源层相邻的第一氧化硅层的厚度为
Figure PCTCN2018081572-appb-000018
由一氧化二氮和甲硅烷气体按照质量流量比40：1进 行沉积得到，第二氧化硅层的厚度为
Figure PCTCN2018081572-appb-000019
由一氧化二氮和甲硅烷气体按照质量流量比80：1进行沉积得到。如图7所示，氢氧基的含量趋近于零，即有源层的沟道区中基本不含有氢氧基，说明改变钝化层的结构及工艺条件能有效阻挡氢向有源层中扩散。
图5为图7中的示例性TFT器件的性能测试的特性曲线图。从图5可知，氧化物薄膜晶体管的Vth随着Vds变化的趋势为负偏，但当Vds从5.1V到15.1V后，氧化物薄膜晶体管的Vth基本不随Vds的变化而变化，说明改变钝化层来阻挡氢向氧化物导体层扩散的处理对氧化物薄膜晶体管的性能起到很大的改善作用。
另外，本公开还提供一种显示装置，该显示装置包括上述的阵列基板。
本公开实施例还提供一种显示装置，包括上述阵列基板，所述显示装置可以为：显示面板、液晶面板、电子纸、OLED面板、液晶电视、液晶显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件。
由于所述显示装置是在所述阵列基板的基础上进行改进的，因此，所述显示装置自然继承了所述阵列基板的全部优点。
与现有技术相比，本公开具备如下优点：
本公开针对有源层中过多的氢元素导致的薄膜晶体管易短路的问题，提供了一种阵列基板及其制作方法，将现有的单层钝化层采用具有多层结构的氧化硅层和氮氧化硅层复合的结构，且氧化硅层中的多层结构采用不完全相同的工艺条件制作。钝化层采用氧化硅层和氮氧化硅层的复合结构，能够增强钝化层对器件的保护作用，而且采用不同的工艺条件制作多层结构的氧化硅层以阻挡钝化层中氢的扩散，工艺简单，且能有效阻挡钝化层中的氢向有源层扩散，解决有源层中氢过量带来的器件短路问题。
进一步地，所述第一氧化硅层由比例范围在35:1-45:1之间的一氧化二氮和硅烷制成，以该反应气体比例制备的所述第一氧化硅层能够阻挡该层中的氢向有源层中扩散，且形成的氧化硅薄膜能够实现保护器件的目的；所述第二氧化硅层由比例范围在75:1-85:1之间的一氧化二氮和硅烷制成，与所述第一氧化硅层相比，第二氧化硅层的含氢量降低，含氧量增多，则第二氧化硅层的氢难以向第一氧化硅层扩散，即使所述第一氧化硅层发生氢的扩散，也会向含有更少氢的第二氧化硅层扩散，进一步阻挡了第一氧化硅层中的氢向有源层扩散，而且含氧量增多使得在该层能够形成致密的氧化硅薄膜用于保护器件免受外界的污染。
更进一步地，本公开提供的阵列基板中，不同氧化硅层的反应气体比例及厚度虽有 所不同，但多层氧化硅层的反应气体相同，可利用同种沉积方法及装置，降低工艺复杂性及生产成本。
虽然上面已经示出了本公开的一些示例性实施例，但是本领域的技术人员将理解，在不脱离本公开的原理或精神的情况下，可以对这些示例性实施例做出改变，本公开的范围由权利要求及其等同物限定。

Claims (21)

  1. 一种阵列基板的制作方法，包括：
    在晶体管的有源层上沉积多个氧化硅层；以及
    在所述多个氧化硅层之上沉积氮氧化硅层。
  2. 根据权利要求1所述的阵列基板的制作方法，其中所述多个氧化硅层中与所述有源层相邻的第一氧化硅层中的氢含量高于其它氧化硅层中的氢含量。
  3. 根据权利要求1所述的阵列基板的制作方法，其中在有源层上沉积具有多个氧化硅层的步骤包括：
    利用一氧化二氮和硅烷气体在所述有源层上依次沉积第一氧化硅层和第二氧化硅层，
    其中，在沉积所述第一氧化硅层时，所述一氧化二氮和硅烷气体的质量流量比为35:1-45:1；
    在沉积所述第二氧化硅层时，所述一氧化二氮和硅烷气体的质量流量比为75:1-85:1。
  4. 根据权利要求3所述的阵列基板的制作方法，其中在有源层上沉积具有多个氧化硅层的步骤还包括：
    利用一氧化二氮和硅烷气体在所述第一氧化硅层和第二氧化硅层之间沉积第三氧化硅层，
    其中在沉积所述第三氧化硅层时，所述一氧化二氮和硅烷气体的质量流量比为45:1-75:1。
  5. 根据权利要求1所述的阵列基板的制作方法，其中沉积所述氮氧化硅层时的温度为200℃-350℃。
  6. 根据权利要求1所述的阵列基板的制作方法，还包括对所述氮氧化硅层进行退火 处理，其中退火温度不高于250℃。
  7. 根据权利要求2或3所述的阵列基板的制作方法，其中所述第一氧化硅层的厚度范围是
    Figure PCTCN2018081572-appb-100001
  8. 根据权利要求2或3所述的阵列基板的制作方法，其中所述第二氧化硅层的厚度范围是
    Figure PCTCN2018081572-appb-100002
  9. 根据权利要求1所述的阵列基板的制作方法，其中，所述多个氧化硅层中与所述有源层相邻的第一氧化硅层中的氧含量低于其它氧化硅层中的氧含量。
  10. 根据权利要求3或4所述的阵列基板的制作方法，其中所述硅烷为甲硅烷。
  11. 一种晶体管，包括：
    有源层；
    在所述有源层上的多个氧化硅层；以及
    在所述多个氧化硅层上的氮氧化硅层。
  12. 根据权利要求11所述的晶体管，其中所述多个氧化硅层包括与所述有源层相邻的第一氧化硅层，并且所述第一氧化硅层中的氢含量高于其它氧化硅层中的氢含量。
  13. 根据权利要求11所述的晶体管，其中所述多个氧化硅层包括与所述有源层相邻的第一氧化硅层，并且所述第一氧化硅层中的氧含量低于其它氧化硅层中的氧含量。
  14. 根据权利要求11所述的晶体管，其中所述多个氧化硅层包括与所述有源层相邻的第一氧化硅层，所述第一氧化硅层的厚度范围为
    Figure PCTCN2018081572-appb-100003
  15. 根据权利要求14所述的晶体管，其中所述多个氧化硅层包括第二氧化硅层，其中所述第二氧化硅层的厚度范围是
    Figure PCTCN2018081572-appb-100004
  16. 一种阵列基板，包括晶体管阵列，其中所述晶体管阵列中的至少一部分晶体管包括：
    有源层；
    在所述有源层上的多个氧化硅层；以及
    在所述多个氧化硅层上的氮氧化硅层。。
  17. 根据权利要求16所述的阵列基板，其中所述多个氧化硅层包括与所述有源层相邻的第一氧化硅层，并且所述第一氧化硅层中的氢含量高于其它氧化硅层中的氢含量。
  18. 根据权利要求16所述的阵列基板，其中所述多个氧化硅层包括与所述有源层相邻的第一氧化硅层，并且所述第一氧化硅层中的氧含量低于其它氧化硅层中的氧含量。
  19. 根据权利要求16所述的阵列基板，其中所述多个氧化硅层包括与所述有源层相邻的第一氧化硅层，所述第一氧化硅层的厚度范围为
    Figure PCTCN2018081572-appb-100005
  20. 根据权利要求19所述的晶体管，其中所述多个氧化硅层包括第二氧化硅层，其中所述第二氧化硅层的厚度范围是
    Figure PCTCN2018081572-appb-100006
  21. 一种显示装置，包括权利要求16-20中任一项所述的阵列基板。
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