KR20230169955A - 비표면적이 높고 유전성이 높은 소결 포일의 제조방법 - Google Patents

비표면적이 높고 유전성이 높은 소결 포일의 제조방법 Download PDF

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Publication number
KR20230169955A
KR20230169955A KR1020237033722A KR20237033722A KR20230169955A KR 20230169955 A KR20230169955 A KR 20230169955A KR 1020237033722 A KR1020237033722 A KR 1020237033722A KR 20237033722 A KR20237033722 A KR 20237033722A KR 20230169955 A KR20230169955 A KR 20230169955A
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KR
South Korea
Prior art keywords
foil
sintered
aluminum
mixed slurry
surface area
Prior art date
Application number
KR1020237033722A
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English (en)
Korean (ko)
Inventor
지엔중 왕
위 푸
후이민 마오
헝양 청
지앙홍 리
웨이천 쥬
Original Assignee
난통 하이싱 일렉트로닉스 리미티드 라이어빌러티 컴퍼니
난통 하이이 일렉트로닉스 컴퍼니 리미티드
쓰추안 중야 테크놀로지 컴퍼니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 난통 하이싱 일렉트로닉스 리미티드 라이어빌러티 컴퍼니, 난통 하이이 일렉트로닉스 컴퍼니 리미티드, 쓰추안 중야 테크놀로지 컴퍼니 filed Critical 난통 하이싱 일렉트로닉스 리미티드 라이어빌러티 컴퍼니
Publication of KR20230169955A publication Critical patent/KR20230169955A/ko

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029Processes of manufacture
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05Metallic powder characterised by the size or surface area of the particles
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C21/00Alloys based on aluminium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/042Electrodes or formation of dielectric layers thereon characterised by the material
    • H01G9/045Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/048Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052Sintered electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/048Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052Sintered electrodes
    • H01G9/0525Powder therefor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Powder Metallurgy (AREA)
KR1020237033722A 2022-06-07 2023-02-07 비표면적이 높고 유전성이 높은 소결 포일의 제조방법 KR20230169955A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN202210633471.0A CN114724858B (zh) 2022-06-07 2022-06-07 一种高比表面积高介电性烧结箔的制备方法
CN202210633471.0 2022-06-07
PCT/CN2023/074766 WO2023236564A1 (zh) 2022-06-07 2023-02-07 一种高比表面积高介电性烧结箔的制备方法

Publications (1)

Publication Number Publication Date
KR20230169955A true KR20230169955A (ko) 2023-12-18

Family

ID=82233087

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237033722A KR20230169955A (ko) 2022-06-07 2023-02-07 비표면적이 높고 유전성이 높은 소결 포일의 제조방법

Country Status (3)

Country Link
KR (1) KR20230169955A (zh)
CN (1) CN114724858B (zh)
WO (1) WO2023236564A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114724858B (zh) * 2022-06-07 2022-08-12 南通海星电子股份有限公司 一种高比表面积高介电性烧结箔的制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050550A (ja) * 2000-07-31 2002-02-15 Dainippon Ink & Chem Inc タンタル金属粉末分散液、タンタル電解コンデンサ用陽極素子及びこれを用いたタンタル電解コンデンサ、並びにタンタル電解コンデンサ用陽極素子の製造方法。
CN101580237B (zh) * 2009-06-18 2011-04-13 上海交通大学 两步法制备氮化铝的方法
JP5570263B2 (ja) * 2010-03-24 2014-08-13 日立エーアイシー株式会社 電解コンデンサ用陽極
TWI435352B (zh) * 2011-09-21 2014-04-21 Apaq Technology Co Ltd 高比表面積鋁材及其製作方法
JP6164875B2 (ja) * 2013-03-05 2017-07-19 日立エーアイシー株式会社 電解コンデンサ用電極
CN103928237A (zh) * 2014-04-25 2014-07-16 南京工业大学 一种中高压铝电解电容器阳极箔的扩孔工艺
CN110610810B (zh) * 2019-09-29 2022-02-08 宇启材料科技南通有限公司 一种阀金属涂层电极箔的干法制造方法及电解电容器
CN113593911A (zh) * 2021-09-02 2021-11-02 西安稀有金属材料研究院有限公司 一种高比表面积、高比容的烧结阳极材料的制备方法
CN114360922A (zh) * 2022-01-17 2022-04-15 南京信息工程大学 Ag/g-C3N4复合材料及用其制得的电极材料
CN114724858B (zh) * 2022-06-07 2022-08-12 南通海星电子股份有限公司 一种高比表面积高介电性烧结箔的制备方法

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Publication number Publication date
WO2023236564A1 (zh) 2023-12-14
CN114724858B (zh) 2022-08-12
CN114724858A (zh) 2022-07-08

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