KR20220107234A - 기판 액 처리 장치 - Google Patents
기판 액 처리 장치 Download PDFInfo
- Publication number
- KR20220107234A KR20220107234A KR1020227021391A KR20227021391A KR20220107234A KR 20220107234 A KR20220107234 A KR 20220107234A KR 1020227021391 A KR1020227021391 A KR 1020227021391A KR 20227021391 A KR20227021391 A KR 20227021391A KR 20220107234 A KR20220107234 A KR 20220107234A
- Authority
- KR
- South Korea
- Prior art keywords
- nozzle
- unit
- liquid
- nozzles
- processing
- Prior art date
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 200
- 238000012545 processing Methods 0.000 title claims abstract description 181
- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 238000001802 infusion Methods 0.000 claims abstract description 26
- 238000004140 cleaning Methods 0.000 claims description 73
- 230000007246 mechanism Effects 0.000 claims description 72
- 239000002253 acid Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 239000003513 alkali Substances 0.000 claims description 15
- 238000007599 discharging Methods 0.000 claims description 15
- 230000004308 accommodation Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 46
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 24
- 239000007789 gas Substances 0.000 description 22
- 238000012546 transfer Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 230000002452 interceptive effect Effects 0.000 description 8
- 238000000926 separation method Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 239000002585 base Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 238000011835 investigation Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019221552 | 2019-12-06 | ||
JPJP-P-2019-221552 | 2019-12-06 | ||
PCT/JP2020/043677 WO2021111927A1 (ja) | 2019-12-06 | 2020-11-24 | 基板液処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20220107234A true KR20220107234A (ko) | 2022-08-02 |
Family
ID=76222194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020227021391A KR20220107234A (ko) | 2019-12-06 | 2020-11-24 | 기판 액 처리 장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7292417B2 (ja) |
KR (1) | KR20220107234A (ja) |
CN (1) | CN114762088A (ja) |
WO (1) | WO2021111927A1 (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1074725A (ja) | 1996-09-02 | 1998-03-17 | Tokyo Electron Ltd | 洗浄装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013026381A (ja) * | 2011-07-20 | 2013-02-04 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP6456793B2 (ja) * | 2015-08-11 | 2019-01-23 | 東京エレクトロン株式会社 | 基板処理装置および昇華性物質の析出防止方法 |
JP6762184B2 (ja) * | 2016-09-26 | 2020-09-30 | 株式会社Screenホールディングス | 回収配管洗浄方法および基板処理装置 |
JP6914050B2 (ja) * | 2017-02-15 | 2021-08-04 | 東京エレクトロン株式会社 | 基板処理装置 |
-
2020
- 2020-11-24 JP JP2021562583A patent/JP7292417B2/ja active Active
- 2020-11-24 CN CN202080082687.1A patent/CN114762088A/zh active Pending
- 2020-11-24 KR KR1020227021391A patent/KR20220107234A/ko unknown
- 2020-11-24 WO PCT/JP2020/043677 patent/WO2021111927A1/ja active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1074725A (ja) | 1996-09-02 | 1998-03-17 | Tokyo Electron Ltd | 洗浄装置 |
Also Published As
Publication number | Publication date |
---|---|
JP7292417B2 (ja) | 2023-06-16 |
WO2021111927A1 (ja) | 2021-06-10 |
JPWO2021111927A1 (ja) | 2021-06-10 |
CN114762088A (zh) | 2022-07-15 |
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