KR20220103108A - 반도체 장치 및 전자 기기 - Google Patents

반도체 장치 및 전자 기기 Download PDF

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Publication number
KR20220103108A
KR20220103108A KR1020227016290A KR20227016290A KR20220103108A KR 20220103108 A KR20220103108 A KR 20220103108A KR 1020227016290 A KR1020227016290 A KR 1020227016290A KR 20227016290 A KR20227016290 A KR 20227016290A KR 20220103108 A KR20220103108 A KR 20220103108A
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KR
South Korea
Prior art keywords
insulator
transistor
semiconductor
conductor
memory
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Pending
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KR1020227016290A
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English (en)
Korean (ko)
Inventor
히로미치 고도
히토시 쿠니타케
카즈키 츠다
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20220103108A publication Critical patent/KR20220103108A/ko
Pending legal-status Critical Current

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    • H01L27/11582—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H01L27/108—
    • H01L27/1104—
    • H01L29/66477—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
KR1020227016290A 2019-11-21 2020-11-10 반도체 장치 및 전자 기기 Pending KR20220103108A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019210330 2019-11-21
JPJP-P-2019-210330 2019-11-21
JP2019237925 2019-12-27
JPJP-P-2019-237925 2019-12-27
PCT/IB2020/060547 WO2021099885A1 (ja) 2019-11-21 2020-11-10 半導体装置および電子機器

Publications (1)

Publication Number Publication Date
KR20220103108A true KR20220103108A (ko) 2022-07-21

Family

ID=75980563

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227016290A Pending KR20220103108A (ko) 2019-11-21 2020-11-10 반도체 장치 및 전자 기기

Country Status (5)

Country Link
US (1) US12550325B2 (https=)
JP (2) JPWO2021099885A1 (https=)
KR (1) KR20220103108A (https=)
CN (1) CN114787986A (https=)
WO (1) WO2021099885A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116368602A (zh) 2020-10-02 2023-06-30 株式会社半导体能源研究所 半导体装置
WO2025219846A1 (ja) * 2024-04-19 2025-10-23 株式会社半導体エネルギー研究所 半導体装置
WO2025233772A1 (ja) * 2024-05-10 2025-11-13 株式会社半導体エネルギー研究所 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266143A (ja) 2006-03-27 2007-10-11 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2016225614A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置

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JP5531259B2 (ja) * 2009-03-19 2014-06-25 株式会社東芝 半導体装置及びその製造方法
JP5380190B2 (ja) * 2009-07-21 2014-01-08 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP2011023687A (ja) * 2009-07-21 2011-02-03 Toshiba Corp 不揮発性半導体記憶装置
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20140009023A (ko) 2012-07-13 2014-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20140027762A1 (en) 2012-07-27 2014-01-30 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
US9515080B2 (en) 2013-03-12 2016-12-06 Sandisk Technologies Llc Vertical NAND and method of making thereof using sequential stack etching and landing pad
US9698153B2 (en) * 2013-03-12 2017-07-04 Sandisk Technologies Llc Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad
JP2015056443A (ja) 2013-09-10 2015-03-23 株式会社東芝 不揮発性記憶装置の製造方法
TWI666770B (zh) 2013-12-19 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
US9634097B2 (en) * 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
US9761732B2 (en) 2015-02-25 2017-09-12 Snaptrack Inc. Tunnel thin film transistor with hetero-junction structure
KR102788207B1 (ko) 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6400536B2 (ja) 2015-08-04 2018-10-03 東芝メモリ株式会社 半導体記憶装置
US20180033794A1 (en) 2016-07-27 2018-02-01 Sandisk Technologies Llc Non-Volatile Memory With Reduced Program Speed Variation
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JPWO2018224904A1 (ja) 2017-06-05 2020-05-21 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US10593693B2 (en) 2017-06-16 2020-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP7195068B2 (ja) 2017-06-26 2022-12-23 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP7234110B2 (ja) 2017-07-06 2023-03-07 株式会社半導体エネルギー研究所 メモリセル及び半導体装置
US10665604B2 (en) 2017-07-21 2020-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, memory device, and electronic device
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JP7194813B2 (ja) * 2018-09-13 2022-12-22 長江存儲科技有限責任公司 三次元メモリデバイス、三次元メモリデバイスを作製するための方法及びメモリセルストリング
WO2020095148A1 (ja) 2018-11-08 2020-05-14 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2007266143A (ja) 2006-03-27 2007-10-11 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2016225614A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置

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Publication number Publication date
US20230065351A1 (en) 2023-03-02
CN114787986A (zh) 2022-07-22
US12550325B2 (en) 2026-02-10
WO2021099885A1 (ja) 2021-05-27
JPWO2021099885A1 (https=) 2021-05-27
JP2025185071A (ja) 2025-12-18

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