KR20220103108A - 반도체 장치 및 전자 기기 - Google Patents

반도체 장치 및 전자 기기 Download PDF

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Publication number
KR20220103108A
KR20220103108A KR1020227016290A KR20227016290A KR20220103108A KR 20220103108 A KR20220103108 A KR 20220103108A KR 1020227016290 A KR1020227016290 A KR 1020227016290A KR 20227016290 A KR20227016290 A KR 20227016290A KR 20220103108 A KR20220103108 A KR 20220103108A
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KR
South Korea
Prior art keywords
insulator
transistor
semiconductor
conductor
memory
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Pending
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KR1020227016290A
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English (en)
Korean (ko)
Inventor
히로미치 고도
히토시 쿠니타케
카즈키 츠다
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20220103108A publication Critical patent/KR20220103108A/ko
Pending legal-status Critical Current

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    • H01L27/11582—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H01L27/108—
    • H01L27/1104—
    • H01L29/66477—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020227016290A 2019-11-21 2020-11-10 반도체 장치 및 전자 기기 Pending KR20220103108A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2019-210330 2019-11-21
JP2019210330 2019-11-21
JP2019237925 2019-12-27
JPJP-P-2019-237925 2019-12-27
PCT/IB2020/060547 WO2021099885A1 (ja) 2019-11-21 2020-11-10 半導体装置および電子機器

Publications (1)

Publication Number Publication Date
KR20220103108A true KR20220103108A (ko) 2022-07-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227016290A Pending KR20220103108A (ko) 2019-11-21 2020-11-10 반도체 장치 및 전자 기기

Country Status (5)

Country Link
US (1) US12550325B2 (https=)
JP (2) JPWO2021099885A1 (https=)
KR (1) KR20220103108A (https=)
CN (1) CN114787986A (https=)
WO (1) WO2021099885A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230074757A (ko) 2020-10-02 2023-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TW202604247A (zh) * 2024-04-19 2026-01-16 日商半導體能源研究所股份有限公司 半導體裝置
WO2025233772A1 (ja) * 2024-05-10 2025-11-13 株式会社半導体エネルギー研究所 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266143A (ja) 2006-03-27 2007-10-11 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2016225614A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置

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JP5380190B2 (ja) * 2009-07-21 2014-01-08 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP2011023687A (ja) * 2009-07-21 2011-02-03 Toshiba Corp 不揮発性半導体記憶装置
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20140009023A (ko) 2012-07-13 2014-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20140027762A1 (en) 2012-07-27 2014-01-30 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
US9698153B2 (en) * 2013-03-12 2017-07-04 Sandisk Technologies Llc Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad
US9515080B2 (en) * 2013-03-12 2016-12-06 Sandisk Technologies Llc Vertical NAND and method of making thereof using sequential stack etching and landing pad
JP2015056443A (ja) 2013-09-10 2015-03-23 株式会社東芝 不揮発性記憶装置の製造方法
TWI721409B (zh) 2013-12-19 2021-03-11 日商半導體能源研究所股份有限公司 半導體裝置
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
US9634097B2 (en) * 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
US9761732B2 (en) 2015-02-25 2017-09-12 Snaptrack Inc. Tunnel thin film transistor with hetero-junction structure
WO2016166628A1 (en) 2015-04-13 2016-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP6400536B2 (ja) 2015-08-04 2018-10-03 東芝メモリ株式会社 半導体記憶装置
US20180033794A1 (en) 2016-07-27 2018-02-01 Sandisk Technologies Llc Non-Volatile Memory With Reduced Program Speed Variation
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US10593693B2 (en) 2017-06-16 2020-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
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JP7234110B2 (ja) 2017-07-06 2023-03-07 株式会社半導体エネルギー研究所 メモリセル及び半導体装置
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JP7391874B2 (ja) 2018-11-08 2023-12-05 株式会社半導体エネルギー研究所 半導体装置
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Patent Citations (2)

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JP2007266143A (ja) 2006-03-27 2007-10-11 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2016225614A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置

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Publication number Publication date
JPWO2021099885A1 (https=) 2021-05-27
CN114787986A (zh) 2022-07-22
US20230065351A1 (en) 2023-03-02
WO2021099885A1 (ja) 2021-05-27
US12550325B2 (en) 2026-02-10
JP2025185071A (ja) 2025-12-18

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