CN114787986A - 半导体装置以及电子设备 - Google Patents

半导体装置以及电子设备 Download PDF

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Publication number
CN114787986A
CN114787986A CN202080080493.8A CN202080080493A CN114787986A CN 114787986 A CN114787986 A CN 114787986A CN 202080080493 A CN202080080493 A CN 202080080493A CN 114787986 A CN114787986 A CN 114787986A
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CN
China
Prior art keywords
insulator
transistor
semiconductor
semiconductor device
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080080493.8A
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English (en)
Chinese (zh)
Inventor
乡户宏充
国武宽司
津田一树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN114787986A publication Critical patent/CN114787986A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
CN202080080493.8A 2019-11-21 2020-11-10 半导体装置以及电子设备 Pending CN114787986A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019210330 2019-11-21
JP2019-210330 2019-11-21
JP2019-237925 2019-12-27
JP2019237925 2019-12-27
PCT/IB2020/060547 WO2021099885A1 (ja) 2019-11-21 2020-11-10 半導体装置および電子機器

Publications (1)

Publication Number Publication Date
CN114787986A true CN114787986A (zh) 2022-07-22

Family

ID=75980563

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080080493.8A Pending CN114787986A (zh) 2019-11-21 2020-11-10 半导体装置以及电子设备

Country Status (5)

Country Link
US (1) US12550325B2 (https=)
JP (2) JPWO2021099885A1 (https=)
KR (1) KR20220103108A (https=)
CN (1) CN114787986A (https=)
WO (1) WO2021099885A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116368602A (zh) 2020-10-02 2023-06-30 株式会社半导体能源研究所 半导体装置
WO2025219846A1 (ja) * 2024-04-19 2025-10-23 株式会社半導体エネルギー研究所 半導体装置
WO2025233772A1 (ja) * 2024-05-10 2025-11-13 株式会社半導体エネルギー研究所 半導体装置

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* Cited by examiner, † Cited by third party
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JP5531259B2 (ja) * 2009-03-19 2014-06-25 株式会社東芝 半導体装置及びその製造方法
JP5380190B2 (ja) * 2009-07-21 2014-01-08 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP2011023687A (ja) * 2009-07-21 2011-02-03 Toshiba Corp 不揮発性半導体記憶装置
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20140009023A (ko) 2012-07-13 2014-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20140027762A1 (en) 2012-07-27 2014-01-30 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
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JP2015056443A (ja) 2013-09-10 2015-03-23 株式会社東芝 不揮発性記憶装置の製造方法
TWI666770B (zh) 2013-12-19 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
US9634097B2 (en) * 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
US9761732B2 (en) 2015-02-25 2017-09-12 Snaptrack Inc. Tunnel thin film transistor with hetero-junction structure
KR102788207B1 (ko) 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2016225614A (ja) * 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置
JP6400536B2 (ja) 2015-08-04 2018-10-03 東芝メモリ株式会社 半導体記憶装置
US20180033794A1 (en) 2016-07-27 2018-02-01 Sandisk Technologies Llc Non-Volatile Memory With Reduced Program Speed Variation
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JPWO2018224904A1 (ja) 2017-06-05 2020-05-21 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US10593693B2 (en) 2017-06-16 2020-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP7195068B2 (ja) 2017-06-26 2022-12-23 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP7234110B2 (ja) 2017-07-06 2023-03-07 株式会社半導体エネルギー研究所 メモリセル及び半導体装置
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WO2020095148A1 (ja) 2018-11-08 2020-05-14 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
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Publication number Publication date
US20230065351A1 (en) 2023-03-02
KR20220103108A (ko) 2022-07-21
US12550325B2 (en) 2026-02-10
WO2021099885A1 (ja) 2021-05-27
JPWO2021099885A1 (https=) 2021-05-27
JP2025185071A (ja) 2025-12-18

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