JPWO2021099885A1 - - Google Patents
Info
- Publication number
- JPWO2021099885A1 JPWO2021099885A1 JP2021558030A JP2021558030A JPWO2021099885A1 JP WO2021099885 A1 JPWO2021099885 A1 JP WO2021099885A1 JP 2021558030 A JP2021558030 A JP 2021558030A JP 2021558030 A JP2021558030 A JP 2021558030A JP WO2021099885 A1 JPWO2021099885 A1 JP WO2021099885A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025166553A JP2025185071A (ja) | 2019-11-21 | 2025-10-02 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019210330 | 2019-11-21 | ||
| JP2019237925 | 2019-12-27 | ||
| PCT/IB2020/060547 WO2021099885A1 (ja) | 2019-11-21 | 2020-11-10 | 半導体装置および電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025166553A Division JP2025185071A (ja) | 2019-11-21 | 2025-10-02 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021099885A1 true JPWO2021099885A1 (https=) | 2021-05-27 |
| JPWO2021099885A5 JPWO2021099885A5 (https=) | 2023-11-14 |
Family
ID=75980563
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021558030A Withdrawn JPWO2021099885A1 (https=) | 2019-11-21 | 2020-11-10 | |
| JP2025166553A Pending JP2025185071A (ja) | 2019-11-21 | 2025-10-02 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025166553A Pending JP2025185071A (ja) | 2019-11-21 | 2025-10-02 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12550325B2 (https=) |
| JP (2) | JPWO2021099885A1 (https=) |
| KR (1) | KR20220103108A (https=) |
| CN (1) | CN114787986A (https=) |
| WO (1) | WO2021099885A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116368602A (zh) | 2020-10-02 | 2023-06-30 | 株式会社半导体能源研究所 | 半导体装置 |
| WO2025219846A1 (ja) * | 2024-04-19 | 2025-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2025233772A1 (ja) * | 2024-05-10 | 2025-11-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010106922A1 (ja) * | 2009-03-19 | 2010-09-23 | 株式会社 東芝 | 半導体装置及びその製造方法 |
| JP2011023688A (ja) * | 2009-07-21 | 2011-02-03 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
| US20140264525A1 (en) * | 2013-03-12 | 2014-09-18 | SanDisk Technologies, Inc. | Vertical nand and method of making thereof using sequential stack etching and landing pad |
| JP2016225614A (ja) * | 2015-05-26 | 2016-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2018157205A (ja) * | 2017-03-16 | 2018-10-04 | 東芝メモリ株式会社 | 半導体メモリ |
| JP2019012822A (ja) * | 2017-06-16 | 2019-01-24 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5016832B2 (ja) | 2006-03-27 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
| JP2011023687A (ja) * | 2009-07-21 | 2011-02-03 | Toshiba Corp | 不揮発性半導体記憶装置 |
| US9166055B2 (en) | 2011-06-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8952377B2 (en) | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR20140009023A (ko) | 2012-07-13 | 2014-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US20140027762A1 (en) | 2012-07-27 | 2014-01-30 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
| US9698153B2 (en) * | 2013-03-12 | 2017-07-04 | Sandisk Technologies Llc | Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad |
| JP2015056443A (ja) | 2013-09-10 | 2015-03-23 | 株式会社東芝 | 不揮発性記憶装置の製造方法 |
| TWI666770B (zh) | 2013-12-19 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6607681B2 (ja) | 2014-03-07 | 2019-11-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9634097B2 (en) * | 2014-11-25 | 2017-04-25 | Sandisk Technologies Llc | 3D NAND with oxide semiconductor channel |
| US9761732B2 (en) | 2015-02-25 | 2017-09-12 | Snaptrack Inc. | Tunnel thin film transistor with hetero-junction structure |
| KR102788207B1 (ko) | 2015-04-13 | 2025-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6400536B2 (ja) | 2015-08-04 | 2018-10-03 | 東芝メモリ株式会社 | 半導体記憶装置 |
| US20180033794A1 (en) | 2016-07-27 | 2018-02-01 | Sandisk Technologies Llc | Non-Volatile Memory With Reduced Program Speed Variation |
| US9972641B1 (en) * | 2016-11-17 | 2018-05-15 | Sandisk Technologies Llc | Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof |
| US10553601B2 (en) | 2017-03-16 | 2020-02-04 | Toshiba Memory Corporation | Semiconductor memory including semiconductor oxide |
| JPWO2018224904A1 (ja) | 2017-06-05 | 2020-05-21 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP7195068B2 (ja) | 2017-06-26 | 2022-12-23 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
| JP7234110B2 (ja) | 2017-07-06 | 2023-03-07 | 株式会社半導体エネルギー研究所 | メモリセル及び半導体装置 |
| US10665604B2 (en) | 2017-07-21 | 2020-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, memory device, and electronic device |
| US10355014B1 (en) * | 2017-12-22 | 2019-07-16 | Micron Technology, Inc. | Assemblies having vertically-extending structures |
| JP7194813B2 (ja) * | 2018-09-13 | 2022-12-22 | 長江存儲科技有限責任公司 | 三次元メモリデバイス、三次元メモリデバイスを作製するための方法及びメモリセルストリング |
| WO2020095148A1 (ja) | 2018-11-08 | 2020-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| US11985827B2 (en) | 2020-01-17 | 2024-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, driving method of semiconductor device, and electronic device |
-
2020
- 2020-11-10 CN CN202080080493.8A patent/CN114787986A/zh active Pending
- 2020-11-10 US US17/776,696 patent/US12550325B2/en active Active
- 2020-11-10 WO PCT/IB2020/060547 patent/WO2021099885A1/ja not_active Ceased
- 2020-11-10 JP JP2021558030A patent/JPWO2021099885A1/ja not_active Withdrawn
- 2020-11-10 KR KR1020227016290A patent/KR20220103108A/ko active Pending
-
2025
- 2025-10-02 JP JP2025166553A patent/JP2025185071A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010106922A1 (ja) * | 2009-03-19 | 2010-09-23 | 株式会社 東芝 | 半導体装置及びその製造方法 |
| JP2011023688A (ja) * | 2009-07-21 | 2011-02-03 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
| US20140264525A1 (en) * | 2013-03-12 | 2014-09-18 | SanDisk Technologies, Inc. | Vertical nand and method of making thereof using sequential stack etching and landing pad |
| JP2016225614A (ja) * | 2015-05-26 | 2016-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2018157205A (ja) * | 2017-03-16 | 2018-10-04 | 東芝メモリ株式会社 | 半導体メモリ |
| JP2019012822A (ja) * | 2017-06-16 | 2019-01-24 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20230065351A1 (en) | 2023-03-02 |
| KR20220103108A (ko) | 2022-07-21 |
| CN114787986A (zh) | 2022-07-22 |
| US12550325B2 (en) | 2026-02-10 |
| WO2021099885A1 (ja) | 2021-05-27 |
| JP2025185071A (ja) | 2025-12-18 |
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