KR20190032379A - 화합물, 수지, 조성물 및 패턴 형성방법 - Google Patents
화합물, 수지, 조성물 및 패턴 형성방법 Download PDFInfo
- Publication number
- KR20190032379A KR20190032379A KR1020197002024A KR20197002024A KR20190032379A KR 20190032379 A KR20190032379 A KR 20190032379A KR 1020197002024 A KR1020197002024 A KR 1020197002024A KR 20197002024 A KR20197002024 A KR 20197002024A KR 20190032379 A KR20190032379 A KR 20190032379A
- Authority
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- South Korea
- Prior art keywords
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- formula
- carbon atoms
- compound
- substituent
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- 0 *CCC(C*)C1CCCC1 Chemical compound *CCC(C*)C1CCCC1 0.000 description 36
- QBECHPILQKSHHL-UHFFFAOYSA-N C=C(Oc1ccccc1C1c(cc2)ccc2-c2ccc(C(c3ccccc3CO)c(cccc3)c3O)cc2)[O-]2#CCC3=C2C1=CCC3 Chemical compound C=C(Oc1ccccc1C1c(cc2)ccc2-c2ccc(C(c3ccccc3CO)c(cccc3)c3O)cc2)[O-]2#CCC3=C2C1=CCC3 QBECHPILQKSHHL-UHFFFAOYSA-N 0.000 description 1
- RQDLZIUTQXJBPD-UHFFFAOYSA-N CCCCCC(CC1)CCC1c1ccc(C(C(C(C2)Oc3c4)C=CC2O)c3ccc4O)cc1 Chemical compound CCCCCC(CC1)CCC1c1ccc(C(C(C(C2)Oc3c4)C=CC2O)c3ccc4O)cc1 RQDLZIUTQXJBPD-UHFFFAOYSA-N 0.000 description 1
- DTOICTLTKJNIBX-UHFFFAOYSA-M CCOC(C=CC1C(c(cc2)ccc2-c2ccc(C3c(ccc(O)c4)c4Oc4c3ccc([O-])c4)cc2)C2=CC3)=CC1OC2=CC3O Chemical compound CCOC(C=CC1C(c(cc2)ccc2-c2ccc(C3c(ccc(O)c4)c4Oc4c3ccc([O-])c4)cc2)C2=CC3)=CC1OC2=CC3O DTOICTLTKJNIBX-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
- C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
- C07C69/54—Acrylic acid esters; Methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
- C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D311/78—Ring systems having three or more relevant rings
- C07D311/80—Dibenzopyrans; Hydrogenated dibenzopyrans
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B11/00—Diaryl- or thriarylmethane dyes
- C09B11/04—Diaryl- or thriarylmethane dyes derived from triarylmethanes, i.e. central C-atom is substituted by amino, cyano, alkyl
- C09B11/06—Hydroxy derivatives of triarylmethanes in which at least one OH group is bound to an aryl nucleus and their ethers or esters
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
- C07C69/604—Polycarboxylic acid esters, the acid moiety containing more than two carboxyl groups
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
- C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D311/78—Ring systems having three or more relevant rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
- C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D311/78—Ring systems having three or more relevant rings
- C07D311/80—Dibenzopyrans; Hydrogenated dibenzopyrans
- C07D311/82—Xanthenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F20/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0025—Crosslinking or vulcanising agents; including accelerators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
- C08F220/302—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and two or more oxygen atoms in the alcohol moiety
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Pyrane Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2016-143684 | 2016-07-21 | ||
JP2016143684 | 2016-07-21 | ||
PCT/JP2017/026574 WO2018016648A1 (fr) | 2016-07-21 | 2017-07-21 | Composé, résine, composition et procédé de formation de motif |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20190032379A true KR20190032379A (ko) | 2019-03-27 |
Family
ID=60992463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020197002024A KR20190032379A (ko) | 2016-07-21 | 2017-07-21 | 화합물, 수지, 조성물 및 패턴 형성방법 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7069530B2 (fr) |
KR (1) | KR20190032379A (fr) |
CN (1) | CN109476580A (fr) |
TW (1) | TW201819351A (fr) |
WO (1) | WO2018016648A1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109415286A (zh) * | 2016-07-21 | 2019-03-01 | 三菱瓦斯化学株式会社 | 化合物、树脂、组合物和图案形成方法 |
JP7194356B2 (ja) * | 2016-07-21 | 2022-12-22 | 三菱瓦斯化学株式会社 | 化合物、樹脂及び組成物、並びにレジストパターン形成方法及び回路パターン形成方法 |
WO2018101463A1 (fr) * | 2016-12-02 | 2018-06-07 | 三菱瓦斯化学株式会社 | Composé, résine, compositions, procédé de formation de motif, et procédé de purification |
WO2018230322A1 (fr) * | 2017-06-12 | 2018-12-20 | Dic株式会社 | Composé polymérisable, et composition de cristaux liquides |
KR20200119241A (ko) * | 2018-02-09 | 2020-10-19 | 미쓰비시 가스 가가쿠 가부시키가이샤 | 트리아릴메탄 화합물 |
KR20210036866A (ko) * | 2018-07-31 | 2021-04-05 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 광학부품형성용 조성물 및 광학부품, 그리고, 화합물 및 수지 |
WO2023190508A1 (fr) * | 2022-03-31 | 2023-10-05 | 群栄化学工業株式会社 | Élément optique, matériau de formation d'élément optique et son procédé de fabrication, et procédé de fabrication d'élément optique |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002334869A (ja) | 2001-02-07 | 2002-11-22 | Tokyo Electron Ltd | シリコン窒化膜の形成方法、形成装置及びこの形成装置の洗浄前処理方法 |
JP2004177668A (ja) | 2002-11-27 | 2004-06-24 | Tokyo Ohka Kogyo Co Ltd | 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法 |
WO2004066377A1 (fr) | 2003-01-24 | 2004-08-05 | Tokyo Electron Limited | Procede de depot chimique en phase vapeur pour former un film de nitrure de silicium sur un substrat |
JP2004271838A (ja) | 2003-03-07 | 2004-09-30 | Shin Etsu Chem Co Ltd | レジスト下層膜材料ならびにパターン形成方法 |
JP2005250434A (ja) | 2004-02-04 | 2005-09-15 | Shin Etsu Chem Co Ltd | レジスト下層膜材料ならびにパターン形成方法 |
JP2005326838A (ja) | 2004-04-15 | 2005-11-24 | Mitsubishi Gas Chem Co Inc | レジスト組成物 |
JP2007226204A (ja) | 2006-01-25 | 2007-09-06 | Shin Etsu Chem Co Ltd | 反射防止膜材料、基板、及びパターン形成方法 |
JP2007226170A (ja) | 2006-01-27 | 2007-09-06 | Shin Etsu Chem Co Ltd | 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法 |
JP2008145539A (ja) | 2006-12-06 | 2008-06-26 | Mitsubishi Gas Chem Co Inc | 感放射線性レジスト組成物 |
JP2009173623A (ja) | 2007-04-23 | 2009-08-06 | Mitsubishi Gas Chem Co Inc | 感放射線性組成物 |
JP2010138393A (ja) | 2008-11-13 | 2010-06-24 | Nippon Kayaku Co Ltd | 光学レンズシート用エネルギー線硬化型樹脂組成物及びその硬化物 |
WO2013024779A1 (fr) | 2011-08-12 | 2013-02-21 | 三菱瓦斯化学株式会社 | Film de sous-couche pour lithographie ainsi que matériau pour formation de celui-ci, et procédé de formation de motif |
WO2013024778A1 (fr) | 2011-08-12 | 2013-02-21 | 三菱瓦斯化学株式会社 | Composition de réserve, procédé de formation de motif de réserve, composé polyphénol mis en œuvre dans ce procédé, et composé alcool obtenu par dérivation de ce composé polyphénol |
JP2015174877A (ja) | 2014-03-13 | 2015-10-05 | 日産化学工業株式会社 | 特定の硬化促進触媒を含む樹脂組成物 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02111743A (ja) * | 1988-10-19 | 1990-04-24 | Idemitsu Kosan Co Ltd | アクリル酸誘導体 |
JPH04253716A (ja) * | 1991-02-05 | 1992-09-09 | Dainippon Ink & Chem Inc | 新規なエネルギー線硬化型樹脂組成物 |
JP2003012660A (ja) * | 2001-06-28 | 2003-01-15 | Sumitomo Bakelite Co Ltd | エポキシアクリレート化合物およびその製造方法 |
KR101308955B1 (ko) | 2005-07-20 | 2013-09-25 | 가부시키가이샤 아데카 | 함불소 공중합체, 알칼리 현상성 수지 조성물 및 알칼리 현상성 감광성 수지 조성물 |
JP5224130B2 (ja) * | 2008-03-10 | 2013-07-03 | ナガセケムテックス株式会社 | 撥液性樹脂組成物 |
JP2009275148A (ja) | 2008-05-15 | 2009-11-26 | Adeka Corp | 新規化合物、アルカリ現像性樹脂組成物及びアルカリ現像性感光性樹脂組成物 |
JP5320167B2 (ja) | 2008-05-30 | 2013-10-23 | 富士フイルム株式会社 | バリア性積層体、ガスバリアフィルム、デバイスおよび積層体の製造方法 |
JP2010126693A (ja) * | 2008-11-28 | 2010-06-10 | Nagase Chemtex Corp | 非対称型の多官能水酸基含有縮環構造化合物及び縮環構造含有樹脂 |
JP5423004B2 (ja) | 2009-01-08 | 2014-02-19 | 東レ株式会社 | ネガ型感光性樹脂組成物およびそれを用いたタッチパネル用材料 |
JP5600903B2 (ja) * | 2009-08-05 | 2014-10-08 | 日立化成株式会社 | 感光性樹脂組成物、並びにこれを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 |
KR101453769B1 (ko) * | 2010-12-24 | 2014-10-22 | 제일모직 주식회사 | 감광성 수지 조성물 및 이를 이용한 컬러 필터 |
JP5778462B2 (ja) * | 2011-04-18 | 2015-09-16 | 旭有機材工業株式会社 | アントラセン誘導体及びこの製造方法、硬化性組成物並びに硬化物 |
JP2013016670A (ja) | 2011-07-05 | 2013-01-24 | Fujifilm Corp | 透明導電フィルムおよびその製造方法並びに有機薄膜太陽電池 |
JP5897360B2 (ja) * | 2012-03-15 | 2016-03-30 | サンワ化学工業株式会社 | Led用ソルダーレジストを形成するための組成物 |
CN102778814B (zh) | 2012-07-05 | 2014-04-23 | 常州强力先端电子材料有限公司 | 一种含有酮肟酯类光引发剂的感光性组合物及其应用 |
CN103293855B (zh) | 2013-05-20 | 2015-12-23 | 常州强力先端电子材料有限公司 | 一种丙烯酸酯类光固化组合物 |
WO2015137486A1 (fr) | 2014-03-13 | 2015-09-17 | 三菱瓦斯化学株式会社 | Composé, résine, matériau de formation de film de couche de base pour lithographie, film de couche de base pour lithographie, procédé de formation de motif, et procédé pour composé ou résine de raffinage |
KR101532341B1 (ko) * | 2014-10-21 | 2015-06-29 | (주)코앤코 | 고굴절율을 갖는 광경화성 수지 조성물 |
JP7026439B2 (ja) | 2014-12-25 | 2022-02-28 | 三菱瓦斯化学株式会社 | 化合物、樹脂、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜、パターン形成方法及び精製方法 |
CN104887535B (zh) | 2015-05-26 | 2017-10-10 | 中国科学院宁波材料技术与工程研究所 | 一种低体积收缩、抗菌牙科树脂复合材料的制备方法 |
-
2017
- 2017-07-21 KR KR1020197002024A patent/KR20190032379A/ko not_active Application Discontinuation
- 2017-07-21 CN CN201780044521.9A patent/CN109476580A/zh not_active Withdrawn
- 2017-07-21 JP JP2018528912A patent/JP7069530B2/ja active Active
- 2017-07-21 WO PCT/JP2017/026574 patent/WO2018016648A1/fr active Application Filing
- 2017-07-21 TW TW106124668A patent/TW201819351A/zh unknown
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002334869A (ja) | 2001-02-07 | 2002-11-22 | Tokyo Electron Ltd | シリコン窒化膜の形成方法、形成装置及びこの形成装置の洗浄前処理方法 |
JP2004177668A (ja) | 2002-11-27 | 2004-06-24 | Tokyo Ohka Kogyo Co Ltd | 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法 |
WO2004066377A1 (fr) | 2003-01-24 | 2004-08-05 | Tokyo Electron Limited | Procede de depot chimique en phase vapeur pour former un film de nitrure de silicium sur un substrat |
JP2004271838A (ja) | 2003-03-07 | 2004-09-30 | Shin Etsu Chem Co Ltd | レジスト下層膜材料ならびにパターン形成方法 |
JP2005250434A (ja) | 2004-02-04 | 2005-09-15 | Shin Etsu Chem Co Ltd | レジスト下層膜材料ならびにパターン形成方法 |
JP2005326838A (ja) | 2004-04-15 | 2005-11-24 | Mitsubishi Gas Chem Co Inc | レジスト組成物 |
JP2007226204A (ja) | 2006-01-25 | 2007-09-06 | Shin Etsu Chem Co Ltd | 反射防止膜材料、基板、及びパターン形成方法 |
JP2007226170A (ja) | 2006-01-27 | 2007-09-06 | Shin Etsu Chem Co Ltd | 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法 |
JP2008145539A (ja) | 2006-12-06 | 2008-06-26 | Mitsubishi Gas Chem Co Inc | 感放射線性レジスト組成物 |
JP2009173623A (ja) | 2007-04-23 | 2009-08-06 | Mitsubishi Gas Chem Co Inc | 感放射線性組成物 |
JP2010138393A (ja) | 2008-11-13 | 2010-06-24 | Nippon Kayaku Co Ltd | 光学レンズシート用エネルギー線硬化型樹脂組成物及びその硬化物 |
WO2013024779A1 (fr) | 2011-08-12 | 2013-02-21 | 三菱瓦斯化学株式会社 | Film de sous-couche pour lithographie ainsi que matériau pour formation de celui-ci, et procédé de formation de motif |
WO2013024778A1 (fr) | 2011-08-12 | 2013-02-21 | 三菱瓦斯化学株式会社 | Composition de réserve, procédé de formation de motif de réserve, composé polyphénol mis en œuvre dans ce procédé, et composé alcool obtenu par dérivation de ce composé polyphénol |
JP2015174877A (ja) | 2014-03-13 | 2015-10-05 | 日産化学工業株式会社 | 特定の硬化促進触媒を含む樹脂組成物 |
Non-Patent Citations (2)
Title |
---|
T.Nakayama, M.Nomura, K.Haga, M.Ueda: Bull. Chem. Soc. Jpn., 71, 2979(1998) |
오카자키신지, 외 22명 「포토레지스트재료 개발의 신전개」 주식회사씨엠씨 출판, 2009년 9월, p.211-259 |
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TW201819351A (zh) | 2018-06-01 |
JPWO2018016648A1 (ja) | 2019-05-09 |
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