KR20190024993A - 반도체 모듈 - Google Patents

반도체 모듈 Download PDF

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Publication number
KR20190024993A
KR20190024993A KR1020197002978A KR20197002978A KR20190024993A KR 20190024993 A KR20190024993 A KR 20190024993A KR 1020197002978 A KR1020197002978 A KR 1020197002978A KR 20197002978 A KR20197002978 A KR 20197002978A KR 20190024993 A KR20190024993 A KR 20190024993A
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South Korea
Prior art keywords
substrate
signal
insulating member
bonded
conductive
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Abandoned
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KR1020197002978A
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English (en)
Korean (ko)
Inventor
나오키 가토
쇼고 모리
하루미츠 사토
히로키 와타나베
히로시 유구치
유리 오토베
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가부시키가이샤 도요다 지도숏키
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Publication of KR20190024993A publication Critical patent/KR20190024993A/ko
Abandoned legal-status Critical Current

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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
KR1020197002978A 2016-08-03 2017-05-12 반도체 모듈 Abandoned KR20190024993A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016153084A JP6717103B2 (ja) 2016-08-03 2016-08-03 半導体モジュール
JPJP-P-2016-153084 2016-08-03
PCT/JP2017/018052 WO2018025463A1 (ja) 2016-08-03 2017-05-12 半導体モジュール

Publications (1)

Publication Number Publication Date
KR20190024993A true KR20190024993A (ko) 2019-03-08

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KR1020197002978A Abandoned KR20190024993A (ko) 2016-08-03 2017-05-12 반도체 모듈

Country Status (6)

Country Link
US (1) US10770400B2 (enExample)
EP (1) EP3496141A4 (enExample)
JP (1) JP6717103B2 (enExample)
KR (1) KR20190024993A (enExample)
CN (1) CN109564912A (enExample)
WO (1) WO2018025463A1 (enExample)

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JP2015080383A (ja) 2013-10-18 2015-04-23 日本精工株式会社 半導体モジュール

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JP3904541B2 (ja) * 2003-09-26 2007-04-11 沖電気工業株式会社 半導体装置内蔵基板の製造方法
JP2007288044A (ja) * 2006-04-19 2007-11-01 Sumitomo Electric Ind Ltd 半導体装置
JP5268786B2 (ja) * 2009-06-04 2013-08-21 三菱電機株式会社 半導体モジュール
JP5659663B2 (ja) * 2010-09-28 2015-01-28 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP2012151353A (ja) * 2011-01-20 2012-08-09 Sharp Corp 半導体モジュール
CN102148215B (zh) * 2011-01-21 2012-06-06 哈尔滨理工大学 提高ccga 器件软钎焊焊点可靠性的互连结构及实现方法
JP2013004943A (ja) 2011-06-22 2013-01-07 Renesas Electronics Corp 半導体装置及びその製造方法
JP5708359B2 (ja) * 2011-08-11 2015-04-30 株式会社デンソー 半導体装置及び半導体装置の製造方法
WO2015178296A1 (ja) * 2014-05-20 2015-11-26 三菱電機株式会社 電力用半導体装置
JP6308300B2 (ja) * 2014-08-12 2018-04-11 富士電機株式会社 半導体装置
JP6361448B2 (ja) * 2014-10-15 2018-07-25 住友電気工業株式会社 半導体モジュール

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JP2015080383A (ja) 2013-10-18 2015-04-23 日本精工株式会社 半導体モジュール

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