JP6717103B2 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

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Publication number
JP6717103B2
JP6717103B2 JP2016153084A JP2016153084A JP6717103B2 JP 6717103 B2 JP6717103 B2 JP 6717103B2 JP 2016153084 A JP2016153084 A JP 2016153084A JP 2016153084 A JP2016153084 A JP 2016153084A JP 6717103 B2 JP6717103 B2 JP 6717103B2
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JP
Japan
Prior art keywords
electrode
joint portion
insulating member
substrate
conductive
Prior art date
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Expired - Fee Related
Application number
JP2016153084A
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English (en)
Japanese (ja)
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JP2018022777A5 (enExample
JP2018022777A (ja
Inventor
直毅 加藤
直毅 加藤
森 昌吾
昌吾 森
晴光 佐藤
晴光 佐藤
大城 渡辺
大城 渡辺
洋史 湯口
洋史 湯口
音部 優里
優里 音部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Industries Corp
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Toyota Industries Corp
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Publication date
Priority to JP2016153084A priority Critical patent/JP6717103B2/ja
Application filed by Toyota Industries Corp filed Critical Toyota Industries Corp
Priority to US16/322,401 priority patent/US10770400B2/en
Priority to KR1020197002978A priority patent/KR20190024993A/ko
Priority to PCT/JP2017/018052 priority patent/WO2018025463A1/ja
Priority to CN201780047686.1A priority patent/CN109564912A/zh
Priority to EP17836570.6A priority patent/EP3496141A4/en
Publication of JP2018022777A publication Critical patent/JP2018022777A/ja
Publication of JP2018022777A5 publication Critical patent/JP2018022777A5/ja
Application granted granted Critical
Publication of JP6717103B2 publication Critical patent/JP6717103B2/ja
Expired - Fee Related legal-status Critical Current
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
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JP2016153084A 2016-08-03 2016-08-03 半導体モジュール Expired - Fee Related JP6717103B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2016153084A JP6717103B2 (ja) 2016-08-03 2016-08-03 半導体モジュール
KR1020197002978A KR20190024993A (ko) 2016-08-03 2017-05-12 반도체 모듈
PCT/JP2017/018052 WO2018025463A1 (ja) 2016-08-03 2017-05-12 半導体モジュール
CN201780047686.1A CN109564912A (zh) 2016-08-03 2017-05-12 半导体模块
US16/322,401 US10770400B2 (en) 2016-08-03 2017-05-12 Semiconductor module
EP17836570.6A EP3496141A4 (en) 2016-08-03 2017-05-12 SEMICONDUCTOR MODULE

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JP2016153084A JP6717103B2 (ja) 2016-08-03 2016-08-03 半導体モジュール

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JP2018022777A JP2018022777A (ja) 2018-02-08
JP2018022777A5 JP2018022777A5 (enExample) 2018-11-29
JP6717103B2 true JP6717103B2 (ja) 2020-07-01

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JP2016153084A Expired - Fee Related JP6717103B2 (ja) 2016-08-03 2016-08-03 半導体モジュール

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US (1) US10770400B2 (enExample)
EP (1) EP3496141A4 (enExample)
JP (1) JP6717103B2 (enExample)
KR (1) KR20190024993A (enExample)
CN (1) CN109564912A (enExample)
WO (1) WO2018025463A1 (enExample)

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JP3614386B2 (ja) 2001-08-23 2005-01-26 株式会社ルネサステクノロジ パワーmosfet
JP3904541B2 (ja) * 2003-09-26 2007-04-11 沖電気工業株式会社 半導体装置内蔵基板の製造方法
JP2007288044A (ja) * 2006-04-19 2007-11-01 Sumitomo Electric Ind Ltd 半導体装置
JP5268786B2 (ja) * 2009-06-04 2013-08-21 三菱電機株式会社 半導体モジュール
JP5659663B2 (ja) * 2010-09-28 2015-01-28 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP2012151353A (ja) * 2011-01-20 2012-08-09 Sharp Corp 半導体モジュール
CN102148215B (zh) * 2011-01-21 2012-06-06 哈尔滨理工大学 提高ccga 器件软钎焊焊点可靠性的互连结构及实现方法
JP2013004943A (ja) 2011-06-22 2013-01-07 Renesas Electronics Corp 半導体装置及びその製造方法
JP5708359B2 (ja) * 2011-08-11 2015-04-30 株式会社デンソー 半導体装置及び半導体装置の製造方法
JP2015080383A (ja) 2013-10-18 2015-04-23 日本精工株式会社 半導体モジュール
WO2015178296A1 (ja) * 2014-05-20 2015-11-26 三菱電機株式会社 電力用半導体装置
JP6308300B2 (ja) * 2014-08-12 2018-04-11 富士電機株式会社 半導体装置
JP6361448B2 (ja) * 2014-10-15 2018-07-25 住友電気工業株式会社 半導体モジュール

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