KR20180116293A - Sn-Zn-O 계 산화물 소결체와 그 제조 방법 - Google Patents
Sn-Zn-O 계 산화물 소결체와 그 제조 방법 Download PDFInfo
- Publication number
- KR20180116293A KR20180116293A KR1020187024734A KR20187024734A KR20180116293A KR 20180116293 A KR20180116293 A KR 20180116293A KR 1020187024734 A KR1020187024734 A KR 1020187024734A KR 20187024734 A KR20187024734 A KR 20187024734A KR 20180116293 A KR20180116293 A KR 20180116293A
- Authority
- KR
- South Korea
- Prior art keywords
- sintered body
- relative density
- less
- additive element
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910007541 Zn O Inorganic materials 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000654 additive Substances 0.000 claims abstract description 70
- 230000000996 additive effect Effects 0.000 claims abstract description 69
- 238000005245 sintering Methods 0.000 claims abstract description 47
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 13
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 239000011701 zinc Substances 0.000 claims description 97
- 239000000843 powder Substances 0.000 claims description 66
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 41
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- 238000010304 firing Methods 0.000 claims description 23
- 229910052718 tin Inorganic materials 0.000 claims description 23
- 229910052725 zinc Inorganic materials 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 229910052738 indium Inorganic materials 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 239000011230 binding agent Substances 0.000 claims description 9
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- 229910052684 Cerium Inorganic materials 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 238000001354 calcination Methods 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 238000005477 sputtering target Methods 0.000 abstract description 10
- 239000011135 tin Substances 0.000 description 107
- 230000000052 comparative effect Effects 0.000 description 29
- 239000010408 film Substances 0.000 description 18
- 239000002994 raw material Substances 0.000 description 18
- 239000011787 zinc oxide Substances 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 7
- 229910001887 tin oxide Inorganic materials 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000007088 Archimedes method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 238000005324 grain boundary diffusion Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 208000031872 Body Remains Diseases 0.000 description 1
- 229910020203 CeO Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- -1 argon cations Chemical class 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62695—Granulation or pelletising
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/604—Pressing at temperatures other than sintering temperatures
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016042332 | 2016-03-04 | ||
| JPJP-P-2016-042332 | 2016-03-04 | ||
| JP2016082691A JP6677058B2 (ja) | 2016-03-04 | 2016-04-18 | Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体とその製造方法 |
| JPJP-P-2016-082691 | 2016-04-18 | ||
| PCT/JP2016/086172 WO2017149882A1 (ja) | 2016-03-04 | 2016-12-06 | Ｓｎ－Ｚｎ－Ｏ系酸化物焼結体とその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20180116293A true KR20180116293A (ko) | 2018-10-24 |
Family
ID=59853860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187024734A Withdrawn KR20180116293A (ko) | 2016-03-04 | 2016-12-06 | Sn-Zn-O 계 산화물 소결체와 그 제조 방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6677058B2 (enExample) |
| KR (1) | KR20180116293A (enExample) |
| CN (1) | CN108698937B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019163494A (ja) * | 2018-03-19 | 2019-09-26 | 住友金属鉱山株式会社 | 透明酸化物膜、透明酸化物膜の製造方法、酸化物焼結体及び透明樹脂基板 |
| JP2021021122A (ja) * | 2019-07-30 | 2021-02-18 | 住友金属鉱山株式会社 | 蒸着用タブレットと酸化物透明導電膜および酸化錫系焼結体の製造方法 |
| CN115745573A (zh) * | 2022-10-31 | 2023-03-07 | 芜湖映日科技股份有限公司 | 一种细晶izo靶材制备方法 |
| CN118724584B (zh) * | 2024-08-06 | 2025-04-25 | 深圳众诚达应用材料股份有限公司 | 一种低电阻的氧化锡基靶材及其制备方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05155651A (ja) * | 1990-12-14 | 1993-06-22 | Hitachi Metals Ltd | 酸化インジウム系焼結体および酸化物焼結体の製造方法 |
| WO2006075483A1 (ja) * | 2005-01-12 | 2006-07-20 | Idemitsu Kosan Co., Ltd. | ＴＦＴ基板及びその製造方法、及び、Ａｌ配線を備えた透明導電膜積層基板及びその製造方法、及び、Ａｌ配線を備えた透明導電膜積層回路基板及びその製造方法、及び、酸化物透明導電膜材料 |
| JP4552950B2 (ja) * | 2006-03-15 | 2010-09-29 | 住友金属鉱山株式会社 | ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜 |
| JP4730204B2 (ja) * | 2006-05-24 | 2011-07-20 | 住友金属鉱山株式会社 | 酸化物焼結体ターゲット、及びそれを用いた酸化物透明導電膜の製造方法 |
| JP2008192604A (ja) * | 2007-01-12 | 2008-08-21 | Sumitomo Chemical Co Ltd | 透明導電膜用材料 |
| JP4745319B2 (ja) * | 2007-11-15 | 2011-08-10 | Ｊｘ日鉱日石金属株式会社 | 光情報記録媒体 |
| WO2009148154A1 (ja) * | 2008-06-06 | 2009-12-10 | 出光興産株式会社 | 酸化物薄膜用スパッタリングターゲットおよびその製造法 |
| KR101671543B1 (ko) * | 2008-11-20 | 2016-11-01 | 이데미쓰 고산 가부시키가이샤 | ＺｎＯ-ＳｎＯ₂-Ｉｎ₂Ｏ₃계 산화물 소결체 및 비정질 투명 도전막 |
| EP2447233A1 (en) * | 2010-10-27 | 2012-05-02 | Corning Incorporated | Tin oxide-based thermoelectric materials |
| JP2012180248A (ja) * | 2011-03-02 | 2012-09-20 | Kobelco Kaken:Kk | 酸化物焼結体およびスパッタリングターゲット |
| JP5686067B2 (ja) * | 2011-08-05 | 2015-03-18 | 住友金属鉱山株式会社 | Ｚｎ−Ｓｎ−Ｏ系酸化物焼結体とその製造方法 |
| JP6278229B2 (ja) * | 2012-08-10 | 2018-02-14 | 三菱マテリアル株式会社 | 透明酸化物膜形成用スパッタリングターゲット及びその製造方法 |
| JP6341198B2 (ja) * | 2013-04-12 | 2018-06-13 | 日立金属株式会社 | 酸化物半導体ターゲット、酸化物半導体膜及びその製造方法、並びに薄膜トランジスタ |
| CN104529426B (zh) * | 2014-12-19 | 2016-08-24 | 江门安磁电子有限公司 | 用于120～160℃的高Bs低损耗锰锌铁氧体材料及其制造方法 |
| TWM512182U (zh) * | 2015-01-21 | 2015-11-11 | Univ Tajen | 醫療照護系統及其醫療教學裝置 |
-
2016
- 2016-04-18 JP JP2016082691A patent/JP6677058B2/ja not_active Expired - Fee Related
- 2016-12-06 CN CN201680083127.1A patent/CN108698937B/zh not_active Expired - Fee Related
- 2016-12-06 KR KR1020187024734A patent/KR20180116293A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017160105A (ja) | 2017-09-14 |
| JP6677058B2 (ja) | 2020-04-08 |
| CN108698937A (zh) | 2018-10-23 |
| CN108698937B (zh) | 2021-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6677095B2 (ja) | Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体とその製造方法 | |
| TWI519502B (zh) | Ｚｎ－Ｓｎ－Ｏ系氧化物燒結體及其製造方法 | |
| KR101274279B1 (ko) | 산화인듐 소결체, 산화인듐 투명 도전막 및 그 투명 도전막의 제조 방법 | |
| JP5339100B2 (ja) | Ｚｎ−Ｓｉ−Ｏ系酸化物焼結体とその製造方法およびスパッタリングターゲットと蒸着用タブレット | |
| KR20180116293A (ko) | Sn-Zn-O 계 산화물 소결체와 그 제조 방법 | |
| JP6229366B2 (ja) | 複合酸化物焼結体及び酸化物透明導電膜 | |
| TWI580663B (zh) | 氧化鋅系燒結體與其製造方法以及濺鍍靶與透明導電膜 | |
| KR20160133429A (ko) | 산화물 소결체 및 산화물 투명 도전막 | |
| JP5907086B2 (ja) | 酸化インジウム系の酸化物焼結体およびその製造方法 | |
| TWI748971B (zh) | Ｓｎ-Ｚｎ-Ｏ系氧化物燒結體及其製造方法 | |
| JP6414527B2 (ja) | Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体とその製造方法 | |
| JP6551683B2 (ja) | Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体とその製造方法 | |
| JP6859841B2 (ja) | Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体とその製造方法 | |
| JP2020117415A (ja) | Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体の製造方法、Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体及びＳｎ−Ｚｎ−Ｏ系酸化物ターゲット | |
| KR20160040533A (ko) | 스퍼터링 타깃 및 그 제조 방법 | |
| WO2017086016A1 (ja) | Ｓｎ－Ｚｎ－Ｏ系酸化物焼結体とその製造方法 | |
| JP5761253B2 (ja) | Ｚｎ−Ｓｉ−Ｏ系酸化物焼結体とその製造方法およびスパッタリングターゲットと蒸着用タブレット | |
| JP5822034B2 (ja) | スパッタリングターゲットとその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20180828 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20211104 Comment text: Request for Examination of Application |
|
| PC1202 | Submission of document of withdrawal before decision of registration |
Comment text: [Withdrawal of Procedure relating to Patent, etc.] Withdrawal (Abandonment) Patent event code: PC12021R01D Patent event date: 20220107 |
|
| WITB | Written withdrawal of application |