KR20160035977A - 피가공물의 연삭 방법 - Google Patents

피가공물의 연삭 방법 Download PDF

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Publication number
KR20160035977A
KR20160035977A KR1020150128879A KR20150128879A KR20160035977A KR 20160035977 A KR20160035977 A KR 20160035977A KR 1020150128879 A KR1020150128879 A KR 1020150128879A KR 20150128879 A KR20150128879 A KR 20150128879A KR 20160035977 A KR20160035977 A KR 20160035977A
Authority
KR
South Korea
Prior art keywords
workpiece
grinding
height
holding
unit
Prior art date
Application number
KR1020150128879A
Other languages
English (en)
Korean (ko)
Inventor
다쿠야 미하라
마사아키 나가시마
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20160035977A publication Critical patent/KR20160035977A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
KR1020150128879A 2014-09-24 2015-09-11 피가공물의 연삭 방법 KR20160035977A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014194072A JP2016064459A (ja) 2014-09-24 2014-09-24 被加工物の研削方法
JPJP-P-2014-194072 2014-09-24

Publications (1)

Publication Number Publication Date
KR20160035977A true KR20160035977A (ko) 2016-04-01

Family

ID=55547950

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150128879A KR20160035977A (ko) 2014-09-24 2015-09-11 피가공물의 연삭 방법

Country Status (4)

Country Link
JP (1) JP2016064459A (ja)
KR (1) KR20160035977A (ja)
CN (1) CN105437077A (ja)
TW (1) TWI658900B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6803187B2 (ja) * 2016-10-05 2020-12-23 株式会社ディスコ 研削砥石のドレッシング方法
JP6707291B2 (ja) * 2016-10-14 2020-06-10 株式会社ディスコ ウェーハの加工方法
WO2020066492A1 (ja) * 2018-09-25 2020-04-02 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3450651B2 (ja) * 1997-06-10 2003-09-29 キヤノン株式会社 研磨方法及びそれを用いた研磨装置
DE19957567B4 (de) * 1999-11-30 2004-04-08 Rasmussen Gmbh Diffusionsdichte Fluidleitung
JP2006021264A (ja) * 2004-07-07 2006-01-26 Disco Abrasive Syst Ltd 研削装置
JP2008006536A (ja) * 2006-06-29 2008-01-17 Disco Abrasive Syst Ltd ウェーハの研削方法
JP2009113149A (ja) * 2007-11-06 2009-05-28 Disco Abrasive Syst Ltd 研削装置
JP5554601B2 (ja) * 2010-03-25 2014-07-23 株式会社ディスコ 研削装置
JP5823880B2 (ja) * 2012-01-16 2015-11-25 株式会社ディスコ 板状物の研削方法
JP2013184239A (ja) * 2012-03-07 2013-09-19 Disco Corp 研削方法及び研削装置
JP2013202704A (ja) * 2012-03-27 2013-10-07 Disco Corp 研削装置及び研削方法

Also Published As

Publication number Publication date
CN105437077A (zh) 2016-03-30
TW201615345A (zh) 2016-05-01
JP2016064459A (ja) 2016-04-28
TWI658900B (zh) 2019-05-11

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