KR20160016638A - 촬상 장치, 감시 장치, 및 전자 기기 - Google Patents

촬상 장치, 감시 장치, 및 전자 기기 Download PDF

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Publication number
KR20160016638A
KR20160016638A KR1020150106748A KR20150106748A KR20160016638A KR 20160016638 A KR20160016638 A KR 20160016638A KR 1020150106748 A KR1020150106748 A KR 1020150106748A KR 20150106748 A KR20150106748 A KR 20150106748A KR 20160016638 A KR20160016638 A KR 20160016638A
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South Korea
Prior art keywords
circuit
transistor
current
terminal
signal
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Ceased
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KR1020150106748A
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English (en)
Korean (ko)
Inventor
다쿠로 오마루
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20160016638A publication Critical patent/KR20160016638A/ko
Priority to KR1020220112726A priority Critical patent/KR20220127215A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H04N5/374—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H04N5/225—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H04N5/335—
    • H04N5/3745—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Dram (AREA)
  • Alarm Systems (AREA)
  • Indicating And Signalling Devices For Elevators (AREA)
  • Maintenance And Inspection Apparatuses For Elevators (AREA)
  • Studio Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020150106748A 2014-07-31 2015-07-28 촬상 장치, 감시 장치, 및 전자 기기 Ceased KR20160016638A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020220112726A KR20220127215A (ko) 2014-07-31 2022-09-06 촬상 장치, 감시 장치, 및 전자 기기

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2014-156296 2014-07-31
JP2014156296 2014-07-31
JPJP-P-2014-179769 2014-09-04
JP2014179769 2014-09-04

Related Child Applications (1)

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KR1020220112726A Division KR20220127215A (ko) 2014-07-31 2022-09-06 촬상 장치, 감시 장치, 및 전자 기기

Publications (1)

Publication Number Publication Date
KR20160016638A true KR20160016638A (ko) 2016-02-15

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KR1020150106748A Ceased KR20160016638A (ko) 2014-07-31 2015-07-28 촬상 장치, 감시 장치, 및 전자 기기
KR1020220112726A Ceased KR20220127215A (ko) 2014-07-31 2022-09-06 촬상 장치, 감시 장치, 및 전자 기기

Family Applications After (1)

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Country Status (4)

Country Link
US (1) US10021329B2 (enExample)
JP (3) JP6555956B2 (enExample)
KR (2) KR20160016638A (enExample)
TW (4) TWI736489B (enExample)

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KR20210100221A (ko) * 2016-03-18 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
US11574945B2 (en) 2017-11-23 2023-02-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device

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US9848146B2 (en) 2015-04-23 2017-12-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
JP6777421B2 (ja) 2015-05-04 2020-10-28 株式会社半導体エネルギー研究所 半導体装置
KR20160144314A (ko) 2015-06-08 2016-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 그 동작 방법, 및 전자 기기
US9860465B2 (en) 2015-06-23 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
TWI738569B (zh) 2015-07-07 2021-09-01 日商半導體能源研究所股份有限公司 成像裝置及其運作方法
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KR20170061602A (ko) 2015-11-26 2017-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
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JP7058479B2 (ja) * 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
TW201824870A (zh) * 2016-12-08 2018-07-01 日商半導體能源研究所股份有限公司 電子裝置及包含該電子裝置的系統
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JP2020162320A (ja) * 2019-03-27 2020-10-01 ソニー株式会社 医療用電源システム、情報処理装置、情報処理方法、画像処理装置、画像処理方法
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JP7686438B2 (ja) * 2020-05-07 2025-06-02 キヤノン株式会社 撮像素子、撮像装置、監視装置、および撮像素子の制御方法
CN114303307B (zh) * 2020-06-23 2024-08-16 庆鼎精密电子（淮安）有限公司 相机模组及其制备方法
CN111988568B (zh) * 2020-08-19 2022-01-28 淄博职业学院 轻轨路口沿线移动监控的机器人
CN112532899B (zh) * 2020-11-27 2023-06-30 京东方科技集团股份有限公司 光电转换电路、驱动方法、光电检测基板、光电检测装置
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